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1. 发明授权

US07006309B2 Prism unit and laser device 失效
标题翻译：棱镜单元和激光设备
公开(公告)号：US07006309B2
公开(公告)日：2006-02-28
申请号：US10280031
申请日：2002-10-25
申请人： Osamu Wakabayashi , Georg Soumagne , Takahito Kumazaki
发明人： Osamu Wakabayashi , Georg Soumagne , Takahito Kumazaki
IPC分类号： G02B5/04
CPC分类号： G02B5/04 , H01S3/08004 , H01S3/105
摘要： A prism unit, which is capable of firmly fixing a plurality of prism parts in a small space, and a laser device, which is capable of enhancing output power of laser light with use of the prism unit, are provided. For this purpose, a prism unit (28) includes a plurality of prism parts (35), which refract incident light (21), and a fixed part (36) which is fixed to or formed integrally with at least two of the plurality of prism parts. Further, a laser device includes the prism unit (28), and only a wavelength in a desired range out of a plurality of oscillation wavelengths is selectively oscillated by the prism unit.
摘要翻译：提供了能够在小空间中牢固地固定多个棱镜部分的棱镜单元和能够使用棱镜单元增强激光输出功率的激光装置。为此，棱镜单元（28）包括折射入射光（21）的多个棱镜部（35）和固定部（36），固定部（36）与多个棱镜零件。此外，激光装置包括棱镜单元（28），并且仅通过棱镜单元选择性地振荡多个振荡波长内的期望范围的波长。

2. 发明授权

US08507885B2 Semiconductor exposure device using extreme ultra violet radiation 有权
标题翻译：半导体曝光装置采用极紫外辐射
公开(公告)号：US08507885B2
公开(公告)日：2013-08-13
申请号：US13494778
申请日：2012-06-12
申请人： Masato Moriya , Osamu Wakabayashi , Georg Soumagne
发明人： Masato Moriya , Osamu Wakabayashi , Georg Soumagne
IPC分类号： G21K5/04
CPC分类号： H05G2/003 , B82Y10/00 , G03F7/70575 , G21K1/062 , G21K2201/061 , G21K2201/064 , G21K2201/067
摘要： The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.
摘要翻译：曝光装置只能将EUV辐射提供给掩模，同时消除EUV辐射以外的辐射。在反射镜的前表面上设置由多个Mo / Si对层制成的多层，并且在该多层中形成闪耀的凹槽。从光源装置入射的辐射入射在该反射镜上并被反射或衍射。由于反射的EUV辐射（包括衍射的EUV辐射）和其他波长的辐射在不同的角度被反射或衍射，因此它们的进展方向是不同的。通过用孔和/或自卸车消除其它波长的辐射，可以仅用高纯度的EUV辐射照射掩模。

3. 发明授权

US08227778B2 Semiconductor exposure device using extreme ultra violet radiation 有权
标题翻译：半导体曝光装置采用极紫外辐射
公开(公告)号：US08227778B2
公开(公告)日：2012-07-24
申请号：US12469176
申请日：2009-05-20
申请人： Masato Moriya , Osamu Wakabayashi , Georg Soumagne
发明人： Masato Moriya , Osamu Wakabayashi , Georg Soumagne
IPC分类号： G21K5/04
CPC分类号： H05G2/003 , B82Y10/00 , G03F7/70575 , G21K1/062 , G21K2201/061 , G21K2201/064 , G21K2201/067
摘要： The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.
摘要翻译：曝光装置只能将EUV辐射提供给掩模，同时消除EUV辐射以外的辐射。在反射镜的前表面上设置由多个Mo / Si对层制成的多层，并且在该多层中形成闪耀的凹槽。从光源装置入射的辐射入射在该反射镜上并被反射或衍射。由于反射的EUV辐射（包括衍射的EUV辐射）和其他波长的辐射在不同的角度被反射或衍射，因此它们的进展方向是不同的。通过用孔和/或自卸车消除其它波长的辐射，可以仅用高纯度的EUV辐射照射掩模。

4. 发明授权

US07903700B2 Narrow-spectrum laser device 有权
标题翻译：窄谱激光装置
公开(公告)号：US07903700B2
公开(公告)日：2011-03-08
申请号：US11631463
申请日：2005-07-07
申请人： Shinji Nagai , Osamu Wakabayashi , Koji Kakizaki , Takayuki Yabu , Takahito Kumazaki
发明人： Shinji Nagai , Osamu Wakabayashi , Koji Kakizaki , Takayuki Yabu , Takahito Kumazaki
IPC分类号： H01S3/10 , H01S3/22
CPC分类号： H01S3/2366 , H01S3/134 , H01S3/225
摘要： A spectral purity range (E95) of a laser beam output from an amplifying laser device (300) is measured by spectral purity range measuring means. To have the measured spectral purity range (E95) within an allowable range E950±dE95 of a target spectral purity range (E950), discharge timing from a time when discharge is started by an oscillating laser device (100) to a time when discharge is started by the amplifying laser device (300) is controlled, and the spectral purity range (E95) is controlled to be stabilized.
摘要翻译：通过光谱纯度范围测量装置测量从放大激光器件（300）输出的激光束的光谱纯度范围（E95）。为了使测得的光谱纯度范围（E95）在目标光谱纯度范围（E950）的允许范围E950±dE95内，从通过振荡激光装置（100）开始放电的时间到放电为止的放电时间由放大激光装置（300）开始的光谱纯度范围（E95）被控制为稳定。

5. 发明授权

US07756183B2 Line narrowed laser apparatus 有权
标题翻译：线窄激光设备
公开(公告)号：US07756183B2
公开(公告)日：2010-07-13
申请号：US11453519
申请日：2006-06-15
申请人： Osamu Wakabayashi , Takahito Kumazaki
发明人： Osamu Wakabayashi , Takahito Kumazaki
IPC分类号： H01S3/09 , H01S3/10
CPC分类号： H01S3/08009 , H01S3/08031 , H01S3/0971 , H01S3/1055 , H01S3/137 , H01S3/225 , H01S3/2258 , H01S3/2308
摘要： The control of the spectral purity width E95 is performed while imparting practically no effect to the control of a central wavelength, and the spectral purity width E95 is stabilized. A wavefront adjuster 32 is provided on an output side of the interior of an optical resonator, i.e., on an output coupler 31 side. Light generated in a laser chamber 10 is transmitted through the wavefront adjuster 32 from the laser chamber 10 side, and reaches the output coupler 31. In the wavefront adjuster 32, the distance between concave and convex lenses 33 and 34 is adjusted so that a desired spectral purity width E95 can be obtained. Then, when the light passes through the wavefront adjuster 32, the wavefront of the light is adjusted to a desired wavefront.
摘要翻译：光谱纯度宽度E95的控制在对中心波长的控制实际上没有影响的同时进行，光谱纯度宽度E95稳定。波前调整器32设置在光谐振器的内部的输出侧，即在输出耦合器31侧。在激光室10中产生的光从激光室10侧透射通过波前调整器32，并到达输出耦合器31.在波前调整器32中，调节凹凸透镜33和34之间的距离，使得期望的可以得到光谱纯度宽度E95。然后，当光通过波前调整器32时，光的波前被调整到期望的波前。

6. 发明授权

US08288743B2 Apparatus for and method of withdrawing ions in EUV light production apparatus 有权
标题翻译： EUV光产生装置中离子离子的设备和方法
公开(公告)号：US08288743B2
公开(公告)日：2012-10-16
申请号：US12406388
申请日：2009-03-18
申请人： Yoshifumi Ueno , Osamu Wakabayashi , Tamotsu Abe , Akira Sumitani , Hideo Hoshino , Akira Endo , Georg Soumagne
发明人： Yoshifumi Ueno , Osamu Wakabayashi , Tamotsu Abe , Akira Sumitani , Hideo Hoshino , Akira Endo , Georg Soumagne
IPC分类号： B01D59/44
CPC分类号： H05G2/003 , G03F7/70033 , G03F7/70858 , G03F7/70916 , G03F7/70983 , G21K1/093 , G21K2201/00 , H05G2/005 , H05G2/008
摘要： An ion withdrawal apparatus that withdraws ions emitted from a plasma in an EUV light production apparatus in which a target at an EUV light production point is irradiated with laser light to be made in a plasma state and the target emits EUV light, the ion withdrawal apparatus which includes: a collector mirror that is disposed in a direction opposite to a laser light incidence direction to collect the EUV light and has a hole for the ions to pass therethrough; magnetic line of force production means that produces a magnetic line of force that is parallel or approximately parallel to the laser light incidence direction at or in the vicinity of the EUV light production point; and ion withdrawal means that is disposed on the opposite side of the collector mirror from the EUV light production point and withdraws the ions.
摘要翻译：一种离子提取装置，其在EUV光产生装置中从在等离子体状态的激光照射EUV光产生点的靶，并且靶射出EUV光的EUV光产生装置中，从等离子体发射的离子，其包括：收集器反射镜，其设置在与激光入射方向相反的方向上以收集EUV光，并具有用于离子通过的孔; 磁力线产生装置意味着产生在EUV光产生点处或附近平行或近似平行于激光入射方向的磁力线; 以及离开收集反射镜与EUV光产生点相反的一侧的离子提取装置，并且离子退出。

7. 发明申请

US20090289205A1 MIRROR FOR EXTREME ULTRA VIOLET, MANUFACTURING METHOD FOR MIRROR FOR EXTREME ULTRA VIOLET, AND FAR ULTRAVIOLET LIGHT SOURCE DEVICE 有权
标题翻译：超级紫外线镜，超大紫外线镜和远紫外光源装置的制造方法
公开(公告)号：US20090289205A1
公开(公告)日：2009-11-26
申请号：US12469140
申请日：2009-05-20
申请人： Masato Moriya , Osamu Wakabayashi , Georg Soumagne
发明人： Masato Moriya , Osamu Wakabayashi , Georg Soumagne
IPC分类号： H05G2/00 , G02B5/08 , G03F7/20
CPC分类号： G02B5/1838 , G02B5/0891 , G02B5/1857 , G03F7/70575 , G21K1/065 , G21K2201/064
摘要： The EUV light source device eliminates radiation other than EUV radiation from the light which it emits, and supplies only the EUV radiation to an exposure device. A composite layer consisting of a plurality of Mo/Si pair layers is provided upon the front surface of an EUV collector mirror, and blazed grooves are formed in this composite layer. Radiation emitted from a plasma is incident upon this EUV collector mirror, and is reflected or diffracted. The reflected EUV radiation (including diffracted EUV) proceeds towards an intermediate focal point IF. The radiation of other wavelengths proceeds towards some position other than this focal point IF, because its reflection angle or diffraction angle is different. A SPF shield having an aperture portion is provided at the focal point IF. Accordingly, only the EUV radiation passes through the aperture portion and is supplied to the exposure device, while the other radiation is intercepted by the shield.
摘要翻译： EUV光源装置除去其发射的光之外的EUV辐射以外的辐射，并且仅将EUV辐射提供给曝光装置。在EUV收集镜的前表面上设置由多个Mo / Si对层构成的复合层，在该复合层中形成闪耀槽。从等离子体发射的辐射入射到该EUV收集镜上，并被反射或衍射。反射的EUV辐射（包括衍射的EUV）进行到中间焦点IF。由于其反射角或衍射角不同，其他波长的辐射进入除了该焦点IF之外的某个位置。具有开口部分的SPF屏蔽设置在焦点IF处。因此，只有EUV辐射通过开口部分并被提供给曝光装置，而另一辐射被屏蔽件遮挡。

8. 发明申请

US20070014326A1 Line narrowed laser apparatus 有权
标题翻译：线窄激光设备
公开(公告)号：US20070014326A1
公开(公告)日：2007-01-18
申请号：US11453519
申请日：2006-06-15
申请人： Osamu Wakabayashi , Takahito Kumazaki
发明人： Osamu Wakabayashi , Takahito Kumazaki
IPC分类号： H01S3/22 , H01S3/097 , H01S3/08 , H01S3/223
CPC分类号： H01S3/08009 , H01S3/08031 , H01S3/0971 , H01S3/1055 , H01S3/137 , H01S3/225 , H01S3/2258 , H01S3/2308
摘要： The control of the spectral purity width E95 is performed while imparting practically no effect to the control of a central wavelength, and the spectral purity width E95 is stabilized. A wavefront adjuster 32 is provided on an output side of the interior of an optical resonator, i.e., on an output coupler 31 side. Light generated in a laser chamber 10 is transmitted through the wavefront adjuster 32 from the laser chamber 10 side, and reaches the output coupler 31. In the wavefront adjuster 32, the distance between concave and convex lenses 33 and 34 is adjusted so that a desired spectral purity width E95 can be obtained. Then, when the light passes through the wavefront adjuster 32, the wavefront of the light is adjusted to a desired wavefront.
摘要翻译：光谱纯度宽度E 95的控制在对中心波长的控制实际上没有影响的同时进行，光谱纯度宽度E 95稳定。波前调整器32设置在光谐振器的内部的输出侧，即在输出耦合器31侧。在激光室10中产生的光从激光室10侧透过波前调整器32，到达输出耦合器31。在波前调整器32中，调节凹凸透镜33和34之间的距离，使得可以获得期望的光谱纯度宽度E 95。然后，当光通过波前调整器32时，光的波前被调整到期望的波前。

9. 发明授权

US08804780B2 Method for adjusting spectral line width of narrow-band laser 有权
标题翻译：调整窄带激光光谱线宽度的方法
公开(公告)号：US08804780B2
公开(公告)日：2014-08-12
申请号：US11822126
申请日：2007-07-02
申请人： Osamu Wakabayashi , Takahito Kumazaki , Toru Suzuki , Masashi Shinbori , Masaya Yoshino
发明人： Osamu Wakabayashi , Takahito Kumazaki , Toru Suzuki , Masashi Shinbori , Masaya Yoshino
IPC分类号： H01S3/13 , H01S3/137
CPC分类号： G03F7/2006 , H01S3/08036 , H01S3/106 , H01S3/137 , H01S3/139 , H01S3/225
摘要： An upper limit and a lower limit are preliminarily set for a spectral line width common to a plurality of narrow-band laser devices. When delivered or subjected to maintenance, the narrow-band laser device is caused to laser oscillate to detect its spectral line width before it is used as a light source for semiconductor exposure. A spectral line width adjustment unit provided in the narrow-band laser device is adjusted so that the spectral line width assumes a value between the upper limit and the lower limit. The present invention is able to suppress the variation in spectral line width such as E95 bandwidth caused by machine differences during the manufacture of the laser device, or by replacement or maintenance of the laser device, whereby the quality of integrated circuit patterns formed by the semiconductor exposure tool can be stabilized.
摘要翻译：对于多个窄带激光装置共有的谱线宽度，预先设定上限和下限。当交付或进行维护时，使窄带激光装置激光振荡，以便在用作半导体曝光的光源之前检测其光谱线宽度。调整设置在窄带激光装置中的谱线宽度调节单元，使得谱线宽度呈现上限和下限之间的值。本发明能够抑制激光装置的制造时的机器差异引起的E95带宽等的频谱线宽度的变化，或者通过更换或维护激光装置，能够抑制由半导体形成的集成电路图案的质量曝光工具可以稳定。

10. 发明申请

US20070091968A1 Two-stage laser system for aligners 有权
标题翻译：对准器的两级激光系统
公开(公告)号：US20070091968A1
公开(公告)日：2007-04-26
申请号：US10554537
申请日：2004-04-16
申请人： Osamu Wakabayashi , Tatsuya Ariga , Takahito Kumazaki , Kotaro Sasano
发明人： Osamu Wakabayashi , Tatsuya Ariga , Takahito Kumazaki , Kotaro Sasano
IPC分类号： H01S3/22 , H01S3/093
CPC分类号： H01S3/2308 , G03F7/70025 , H01S3/083
摘要： The invention relates to a two-stage laser system well fit for semiconductor aligners, which is reduced in terms of spatial coherence while taking advantage of the high stability, high output efficiency and fine line width of the MOPO mode. The two-stage laser system for aligners comprises an oscillation-stage laser (50) and an amplification-stage laser (60). Oscillation laser light having divergence is used as the oscillation-stage laser (50), and the amplification-stage laser (60) comprises a Fabry-Perot etalon resonator made up of an input side mirror (1) and an output side mirror (2). The resonator is configured as a stable resonator.
摘要翻译：本发明涉及一种适用于半导体对准器的两级激光系统，其在利用MOPO模式的高稳定性，高输出效率和细线宽度的同时，在空间相干性方面被减少。用于对准器的两级激光系统包括振荡级激光器（50）和放大级激光器（60）。具有发散的振荡激光用作振荡级激光器（50），放大级激光器（60）包括由输入侧反射镜（1）和输出侧反射镜（2）构成的法布里 - 珀罗标准具共振器）。谐振器被配置为稳定谐振器。

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