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1. 发明申请

US20060126693A1 Integrated semiconductor light source 有权
公开(公告)号：US20060126693A1
公开(公告)日：2006-06-15
申请号：US11176743
申请日：2005-07-07
申请人： Oh Kee Kwon , Kwang Oh , Kang Kim , Jong Kim , Hyun Kim
发明人： Oh Kee Kwon , Kwang Oh , Kang Kim , Jong Kim , Hyun Kim
IPC分类号： H01S5/00
CPC分类号： H01S5/06255 , H01S5/026 , H01S5/065 , H01S5/0654 , H01S5/0656 , H01S5/1021 , H01S5/1025 , H01S5/1039
摘要： Provided is an integrated semiconductor light source using locking characteristic by an external light injection, including: an active region controlling an optical gain and an optical output by current injection; and a passive region having a structure integrated with the active region and moving a cavity mode by current injection or voltage application to lock injection light.

2. 发明申请

US20060104583A1 Method of fabricating ridge type waveguide integrated semiconductor optical device 审中-公开
标题翻译：脊型波导集成半导体光器件的制造方法
公开(公告)号：US20060104583A1
公开(公告)日：2006-05-18
申请号：US11122998
申请日：2005-05-06
申请人： Jong Kim , Hyun Kim , Kang Kim , Oh Kwon , Eun Sim , Kwang Oh
发明人： Jong Kim , Hyun Kim , Kang Kim , Oh Kwon , Eun Sim , Kwang Oh
IPC分类号： G02B6/10
CPC分类号： G02B6/136 , G02B6/122 , G02B2006/12097
摘要： Provided is a method of fabricating a ridge type waveguide integrated semiconductor optical device. The method includes: separating a substrate into an active waveguide region and a passive waveguide region and selectively epitaxial-growing an active layer and a passive layer in the active waveguide region and the passive waveguide region, respectively, such that the active layer and the passive layer are vertically aligned with each other; sequentially forming a capping layer and an electrode connection layer on the active layer and the passive layer; forming a first insulating layer pattern on a predetermined region of the electrode connection layer disposed in the active waveguide region and simultaneously, forming a second insulating layer pattern on a predetermined region of the electrode connection layer disposed in the passive waveguide region; forming a shallow ridge type active waveguide and a shallow ridge type passive waveguide by performing an etching process using the first and second insulating layer patterns as etch masks until the capping layer is etched to a predetermined depth; and forming a passivation pattern on the entire surface of the shallow ridge type active waveguide and forming a deep ridge type passive waveguide by performing an etching process using the second insulating layer pattern as an etch mask until the substrate is etched to a predetermined depth.
摘要翻译：提供了一种制造脊型波导集成半导体光学器件的方法。该方法包括：将衬底分离成有源波导区域和无源波导区域，并分别在有源波导区域和无源波导区域中选择性地外延生长有源层和无源层，使得有源层和被动层彼此垂直对准; 在有源层和被动层上依次形成覆盖层和电极连接层; 在设置在有源波导区域中的电极连接层的预定区域上形成第一绝缘层图案，并同时在布置在无源波导区域中的电极连接层的预定区域上形成第二绝缘层图案; 通过使用第一和第二绝缘层图案作为蚀刻掩模进行蚀刻处理，直到将覆盖层蚀刻到预定深度来形成浅脊型有源波导和浅脊型无源波导; 并且在浅脊型有源波导的整个表面上形成钝化图案，并通过使用第二绝缘层图案作为蚀刻掩模进行蚀刻处理形成深脊型无源波导，直到基板被蚀刻到预定深度。

3. 发明申请

US20060082894A1 Optical deflector 失效
标题翻译：光学偏转器
公开(公告)号：US20060082894A1
公开(公告)日：2006-04-20
申请号：US11237043
申请日：2005-09-28
申请人： Oh Kwon , Kang Kim , Hyun Kim , Jong Kim , Kwang Oh
发明人： Oh Kwon , Kang Kim , Hyun Kim , Jong Kim , Kwang Oh
IPC分类号： G02B3/00
CPC分类号： G02B27/095 , G02B19/0009 , G02B19/0052 , G02B26/0875 , G02B27/0977 , G02B2006/12078 , G02B2006/12104 , G02B2006/12145 , G02F1/295
摘要： Provided is an optical deflector for deflecting radiation beams. The optical deflector includes: a peripheral region having a first effective refractive index; and a deflection pattern region having a predetermined shape and a second effective refractive index, wherein the second effective refractive index differs from the first effective refractive index. Here, due to the deflection pattern region having the predetermined shape, the radiation beams are deflected in a direction starting from a certain point. By using the optical deflector, the locus of a light source can be designed in one of various forms, such as a straight line, a circle, an ellipse, or a parabola.
摘要翻译：提供了用于偏转辐射束的光学偏转器。光学偏转器包括：具有第一有效折射率的周边区域; 以及具有预定形状和第二有效折射率的偏转图案区域，其中所述第二有效折射率与所述第一有效折射率不同。这里，由于具有预定形状的偏转图案区域，辐射束在从某一点开始的方向上偏转。通过使用光学偏转器，光源的轨迹可以被设计成各种形式之一，例如直线，圆形，椭圆形或抛物线。

4. 发明申请

US20060029119A1 Tunable external cavity laser diode using variable optical deflector 失效
标题翻译：可调谐外腔激光二极管使用可变光学偏转器
公开(公告)号：US20060029119A1
公开(公告)日：2006-02-09
申请号：US11029784
申请日：2004-12-21
申请人： Kwang Oh , Oh Kwon , Kang Kim , Jong Kim , Hyun Kim
发明人： Kwang Oh , Oh Kwon , Kang Kim , Jong Kim , Hyun Kim
IPC分类号： H01S3/08
CPC分类号： H01S5/141 , G02B6/29308 , G02B6/2931 , G02B6/29313 , H01S5/005 , H01S5/026 , H01S5/101 , H01S5/143
摘要： Provided is a tunable external cavity laser diode using a variable optical deflector wherein the variable optical deflector, in which a refractive index varies according to an electrical signal, is arranged in a triangular shape between a concave diffraction grating and a reflective mirror. Since a resonant frequency is changed using the electrical signal rather than the mechanical movement, the stable operation and continuous high-speed tenability may be enabled. In addition, when the tunable external cavity laser diode according to the present invention is implemented in an InP/InGaAsP/InP slab waveguide, a variable time determined by the carrier lifetime may be reduced to several nanoseconds or less, the miniaturization is enabled, and the manufacturing costs are significantly reduced due to the process simplification. Moreover, when the concave diffraction grating is designed based on a silica (or polymer) based slab waveguide, the fabrication may be performed even by a lithography process having low resolution, thereby enhancing reproducibility and uniformity of the diffraction grating, and accordingly reducing the manufacturing costs.
摘要翻译：提供了一种可调谐的外腔激光二极管，其使用可变光学偏转器，其中折射率根据电信号变化的可变光学偏转器在凹面衍射光栅和反射镜之间布置成三角形。由于使用电信号而不是机械运动来改变谐振频率，因此可以实现稳定的运行和连续的高速可靠性。此外，当根据本发明的可调谐外腔激光二极管在InP / InGaAsP / InP平板波导中实现时，由载流子寿命确定的可变时间可以减少到几纳秒或更小，可实现小型化，并且由于过程简化，制造成本显着降低。此外，当基于基于二氧化硅（或聚合物）的平板波导设计凹面衍射光栅时，即使通过具有低分辨率的光刻工艺也可以进行制造，从而提高衍射光栅的再现性和均匀性，并因此降低制造费用

5. 发明申请

US20050007647A1 Opto-electronic device with an integrated light deflector and wavelength tunable external cavity laser using the same 审中-公开
标题翻译：具有集成光偏转器和波长可调谐外腔激光器的光电器件
公开(公告)号：US20050007647A1
公开(公告)日：2005-01-13
申请号：US10747933
申请日：2003-12-29
申请人： Kwang Oh , Kang Kim , Oh Kwon , Jong Kim , Hyun Kim
发明人： Kwang Oh , Kang Kim , Oh Kwon , Jong Kim , Hyun Kim
IPC分类号： G02F1/025 , G02B6/12 , G02B6/32 , G02B6/34 , G02F1/29 , G02F1/295 , H01S5/14 , G02B26/00
CPC分类号： G02B6/4246 , G02B6/12004 , G02B6/2931 , G02B6/29395 , G02B6/32 , G02B2006/12097 , G02F1/295 , H01S5/146
摘要： The present invention provides an opto-electronic device with an integrated light deflector comprises: a passive optical waveguide having a lower cladding layer, a core, and an upper cladding layer to guide and transmit optical signals; and a light deflector formed by patterning the upper cladding layer in a predetermined shape at an upper portion of the passive optical waveguide, wherein a refractive index of the core under the predetermined shape is modified to deflect a light beam by applying a current or an electrical field to the light deflector. According to the present invention, it is possible to provide an opto-electronic device with an integrated light deflector capable of deflecting the light propagation direction without necessity of a complicated external driving circuitry.
摘要翻译：本发明提供了一种具有集成光偏转器的光电器件，包括：具有下包层，芯和上包层的无源光波导，用于引导和传输光信号; 以及通过在无源光波导的上部将上部包覆层图案化为预定形状而形成的光偏转器，其中通过施加电流或电流来改变预定形状下的芯的折射率以偏转光束场到光偏转器。根据本发明，可以提供具有能够偏转光传播方向的集成光偏转器的光电器件，而不需要复杂的外部驱动电路。

6. 发明申请

US20070133649A1 Wavelength tunable light source 审中-公开
标题翻译：波长可调光源
公开(公告)号：US20070133649A1
公开(公告)日：2007-06-14
申请号：US11634277
申请日：2006-12-05
申请人： Oh Kwon , Kang Kim , Jonghoi Kim , Eundeok Sim , Kwang Oh
发明人： Oh Kwon , Kang Kim , Jonghoi Kim , Eundeok Sim , Kwang Oh
IPC分类号： H01S3/08
CPC分类号： H01S5/141 , G02B6/29326 , G02B6/29328 , G02B6/29395 , H01S3/1075 , H01S5/02248 , H01S5/026 , H01S5/06255
摘要： Provided is a wavelength tunable light source including a semiconductor optical amplifier, a beam steering unit or a beam deflector, and a concave diffraction grating integrated therein. The wavelength tunable light source can be easily implemented since locations to which a beam is diffracted by the concave diffraction grating and at which portions of the beam with different wavelengths have constructive interference form a straight line, not a Rowland circle. Furthermore, wavelength tuning and optical coupling characteristics of the wavelength tunable light source are excellent. Since both single integration and hybrid integration are possible for the wavelength tunable light source, the wavelength tunable light source exhibits superior operating characteristics and high reliability.
摘要翻译：提供了包括半导体光放大器，光束转向单元或光束偏转器的波长可调光源以及集成在其中的凹衍射光栅。波长可调谐光源可以容易地实现，因为光束被凹衍射光栅衍射的位置和具有不同波长的光束的部分具有相长的干涉形成直线而不是罗兰圆。此外，波长可调光源的波长调谐和光耦合特性优异。由于单一集成和混合集成对于波长可调谐光源是可能的，所以波长可调光源表现出优异的操作特性和高可靠性。

7. 发明申请

US20050219433A1 Liquid crystal display device and method for fabricating the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20050219433A1
公开(公告)日：2005-10-06
申请号：US11091477
申请日：2005-03-29
申请人： Kwang Oh , Myung Nam , Ki Cho , Se Shin , Bong Kim , Kwon Choi
发明人： Kwang Oh , Myung Nam , Ki Cho , Se Shin , Bong Kim , Kwon Choi
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： G02F1/13458 , G02F1/136227 , H01L27/124 , H01L27/1288
摘要： An LCD device and a method for manufacturing the same is disclosed in which the manufacturing process is simplified by etching an overcoat layer and a lower insulating layer at the same time. Disclosed is a method for manufacturing the LCD device that includes forming a thin film transistor (TFT) on an active region of a substrate, forming a gate pad region and data pad region, and forming a passivation layer on the entire surface of the substrate. The manufacturing method further includes forming an overcoat layer and selectively etching the overcoat layer. Contact holes for the pixel electrode, the gate pad, and the data pad are formed by selectively etching the overcoat layer, the passivation layer, and the gate insulating layer though one process.
摘要翻译：公开了一种LCD装置及其制造方法，其中通过同时蚀刻外涂层和下绝缘层来简化制造工艺。公开了一种用于制造LCD器件的方法，其包括在衬底的有源区上形成薄膜晶体管（TFT），形成栅极焊盘区域和数据焊盘区域，并在衬底的整个表面上形成钝化层。制造方法还包括形成外涂层并选择性地蚀刻外涂层。通过一个工艺，通过选择性地蚀刻外涂层，钝化层和栅极绝缘层来形成像素电极，栅极焊盘和数据焊盘的接触孔。

8. 发明授权

US08979038B1 Strut clamp 有权
标题翻译：支架夹
公开(公告)号：US08979038B1
公开(公告)日：2015-03-17
申请号：US13692953
申请日：2012-12-03
申请人： Kwang Oh
发明人： Kwang Oh
IPC分类号： F16L3/10 , F16L3/24
CPC分类号： F16L3/24 , F16L3/00 , F16L3/04 , F16L3/10 , F16L3/12 , F16L3/14 , F16L3/22
摘要： A method for applying a clamp for a construction strut that allows a pipe to be clamped to the construction strut in which the clamp has a fastener that is not exposed above the clamp curvature and in which the fastener head is easily accessible. Also the clamp has a retaining tab and a neck portion such that it can be installed by straight-in insertion at the top of a construction strut. Also, the method has an embodiment in that the clamp can be installed either on the open side of the construction strut or on the closed side using slots in the closed side by straight-in passing the retaining tab past the inturned flanges on the top of the construction strut and by a rotation at the bottom of the construction strut.
摘要翻译：一种用于施加用于构造支柱的夹具的方法，其允许管被夹紧到构造支柱上，其中夹具具有不暴露在夹具曲率之上的紧固件，并且紧固件头部容易接近。此外，夹具具有保持片和颈部，使得其可以通过直接插入在构造支柱的顶部而被安装。此外，该方法具有一个实施例，其中夹具可以安装在施工支柱的开放侧或封闭侧，使用在封闭侧的槽，通过直线穿过保持片穿过位于施工支柱和施工支柱底部的旋转。

9. 发明申请

US20100096510A1 Strut Clamp 有权
标题翻译：支柱夹
公开(公告)号：US20100096510A1
公开(公告)日：2010-04-22
申请号：US12256407
申请日：2008-10-22
申请人： Kwang Oh
发明人： Kwang Oh
IPC分类号： F16L3/00 , E04G25/00 , F16B37/16 , F16L3/12
CPC分类号： F16L3/24 , F16L3/00 , F16L3/04 , F16L3/10 , F16L3/12 , F16L3/14 , F16L3/22
摘要： A clamp for a construction strut that allows a pipe to be clamped to the construction strut in which the clamp has a fastener that is not exposed above the clamp curvature and in which the fastener head is easily accessible. Also the clamp has a retaining tab and a neck portion such that it can be installed either on the open side of the construction strut or on the closed side using slots in the closed side by straight-in passing the retaining tab past the inturned flanges on the top of the construction strut.
摘要翻译：用于构造支柱的夹具，其允许管道夹紧到构造支柱上，其中夹具具有不暴露在夹具曲率之上并且紧固件头部容易接近的紧固件。此外，夹具具有保持突片和颈部部分，使得其可以安装在施工支柱的开放侧或封闭侧，使用在封闭侧的狭槽，通过将保持突片直接穿过所述折回的凸缘上顶部的施工支柱。

10. 发明申请

US20070181927A1 Charge balance insulated gate bipolar transistor 审中-公开
标题翻译：电荷平衡绝缘栅双极晶体管
公开(公告)号：US20070181927A1
公开(公告)日：2007-08-09
申请号：US11408812
申请日：2006-04-21
申请人： Joseph Yedinak , Kwang Oh , Chongman Yun , Jae Lee
发明人： Joseph Yedinak , Kwang Oh , Chongman Yun , Jae Lee
IPC分类号： H01L29/94
CPC分类号： H01L29/7395 , H01L29/0634 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/7397
摘要： An IGBT includes a first silicon region over a collector region, and a plurality of pillars of first and second conductivity types arranged in an alternating manner over the first silicon region. The IGBT further includes a plurality of well regions each extending over and being in electrical contact with one of the pillars of the first conductivity type, and a plurality of gate electrodes each extending over a portion of a corresponding well region. The physical dimensions of each of the first and second conductivity type pillars and the doping concentration of charge carriers in each of the first and second conductivity type pillars are selected so as to create a charge imbalance between a net charge in each pillar of first conductivity and a net charge in its adjacent pillar of the second conductivity type.
摘要翻译： IGBT包括在集电极区域上的第一硅区域和在第一硅区域上以交替方式布置的多个第一和第二导电类型的柱。 IGBT进一步包括多个阱区，每个阱区延伸并且与第一导电类型的一个柱中的一个电接触，并且多个栅电极各自延伸在对应的阱区的一部分上。选择第一和第二导电型柱中的每一个的物理尺寸和第一和第二导电类型柱中的每一个中的载流子的掺杂浓度，以便在第一导电性的每个支柱中的净电荷和其第二导电类型的相邻支柱中的净电荷。

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