专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2010157629A Film forming device 有权
标题翻译：电影制作装置
公开(公告)号：JP2010157629A
公开(公告)日：2010-07-15
申请号：JP2008335419
申请日：2008-12-27
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： MORIYAMA YOSHIKAZU , IKETANI NAOHISA , YAJIMA MASAMI
IPC分类号： H01L21/205 , C23C16/44 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a film forming device which allows a substrate to be mounted on a susceptor at a suitable position so that the substrate after film formation processing does not stick on the susceptor. SOLUTION: The film forming device 1 includes a film formation chamber 2 which incorporates the susceptor 20 mounted with the substrate W and performs the film formation processing on the substrate W while rotating the susceptor 20, a conveyance chamber 4 connected to the film formation chamber 2, a substrate standby chamber 8 connected to the conveyance chamber 4, and a conveyance means 17 provided in the conveyance chamber 4 and for conveying the substrate W between the film formation chamber 2 and substrate standby chamber 8. Further, the film forming device includes a first positioning mechanism 5 configured to position the center of the substrate W in the substrate standby chamber 8 at a first reference position and a second positioning mechanism 6 configured to position the center of the substrate W having been conveyed from the substrate standby chamber 8 at a second reference position in the film formation chamber 2, the second reference position being in the center of the susceptor 20. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种成膜装置，其允许将基板安装在基座上的合适位置，使得成膜处理后的基板不粘附在基座上。解决方案：成膜装置1包括成膜室2，其包含安装有基板W的基座20，并且在旋转基座20的同时对基板W进行成膜处理，连接到膜的输送室4 形成室2，连接到输送室4的基板备用室8和设置在输送室4中并用于在成膜室2和基板备用室8之间输送基板W的输送装置17.此外，成膜装置包括：第一定位机构5，被配置为将基板W的中心定位在基板备用室8中的第一基准位置;以及第二定位机构6，其配置成将基板W的中心从基板备用室在成膜室2中的第二参考位置处的第二参考位置处于第二基准位置，第二参考位置位于成膜室2的中心（C）2010，JPO＆INPIT

2. 发明专利

JP2009135230A Vapor-phase-grown-film forming device and vapor-phase-grown-film forming method 审中-公开
标题翻译：蒸气形成膜形成装置和蒸汽相膜形成方法
公开(公告)号：JP2009135230A
公开(公告)日：2009-06-18
申请号：JP2007309273
申请日：2007-11-29
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： IKETANI NAOHISA , ISHII SHIGEAKI
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vapor-phase-grown-film forming device that prevents corrosion of metal components caused by a by-product of a vapor-phase growth reaction while achieving improvement in semiconductor productivity, and a vapor-phase-grown-film forming method.
SOLUTION: The vapor-phase-grown-film forming device includes a chamber 2 into which a wafer W is inserted, a rotation drive means 6 for rotating the wafer W at a prescribed rotational speed in the chamber 2, a heating means 8 for heating the wafer W, a first material-gas supply means 11 for supplying first material gas to form a vapor-phase grown film into the chamber 2, a second material-gas supply means 13 for supplying second material gas different from the first material gas into the chamber 2, and a carrier gas supply means 12 for supplying carrier gas into the chamber 2.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种气相生长膜形成装置，其在实现半导体生产率的提高的同时，防止由气相生长反应的副产物引起的金属成分的腐蚀，相生长膜形成方法。气相生长膜形成装置包括：晶片W插入其中的室2;用于在室2中以规定的转速旋转晶片W的旋转驱动装置6;加热装置 8，用于加热晶片W的第一材料气体供给装置11，用于供应第一材料气体以在气室2中形成气相生长膜的第一材料气体供给装置11，用于供应与第一材料气体不同的第二材料气体的第二材料气体供给装置13; 进入室2的原料气体和用于将载气供应到室2中的载气供应装置12.版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2013065792A Heater and deposition apparatus 审中-公开
标题翻译：加热器和沉积装置
公开(公告)号：JP2013065792A
公开(公告)日：2013-04-11
申请号：JP2011204765
申请日：2011-09-20
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： IKETANI NAOHISA , SUZUKI KUNIHIKO , SATO HIROSUKE
IPC分类号： H01L21/205 , C23C16/46
CPC分类号： C23C16/46 , C30B25/10 , C30B35/00 , F27B17/0025 , F27D2099/0065 , H01L21/67103
摘要： PROBLEM TO BE SOLVED: To provide a heater having a planar heating element shaped so as to ensure the strength, and to provide a deposition apparatus using the same.SOLUTION: A heating element 1 of a heater includes a ribbon-shaped heating element member 2 having a U-shaped profile as a basic structure, and has a shape capable of ensuring the strength. In the heating element 1, heating element members 2 each having a structure bent in the longitudinal direction are arranged annularly or in disc-shape thus constituting a planar heating element. A heater having the heating element 1 is applied to a deposition apparatus, and disposed below a wafer so that the upper surface S of the heating element 1 faces the rear surface of the wafer. In the heating element 1, occurrence of deflection is reduced and thereby occurrence of deformation can be minimized. In the deposition apparatus, heating of a wafer under desired conditions is achieved by means of a heater having the heating element 1, and the wafer can be heated uniformly from the rear surface.
摘要翻译：要解决的问题：提供具有形状以确保强度的平面加热元件的加热器，并提供使用该加热元件的沉积设备。解决方案：加热器的加热元件1包括具有U形轮廓作为基本结构的带状加热元件2，并且具有能够确保强度的形状。在加热元件1中，具有沿长度方向弯曲的结构的加热元件2被环形地设置成盘状，从而构成平面加热元件。将具有加热元件1的加热器施加到沉积设备，并且设置在晶片的下方，使得加热元件1的上表面S面向晶片的后表面。在加热元件1中，偏转的发生减少，从而可以使变形的发生最小化。在沉积装置中，通过具有加热元件1的加热器实现期望条件下的晶片的加热，并且可以从后表面均匀地加热晶片。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2013030758A Film formation device and film formation method 有权
标题翻译：胶片形成装置和胶片形成方法
公开(公告)号：JP2013030758A
公开(公告)日：2013-02-07
申请号：JP2012135435
申请日：2012-06-15
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー , Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： SUZUKI KUNIHIKO , ITO HIDEKI , IKETANI NAOHISA , TSUCHIDA SHUICHI , KAMATA ISAO , ITO MASAHIKO , NAITO MASAMI , FUJIBAYASHI HIROAKI , ADACHI AYUMI , NISHIKAWA KOICHI
IPC分类号： H01L21/205 , C23C16/46
CPC分类号： C30B25/10
摘要： PROBLEM TO BE SOLVED: To provide a film formation device and a film formation method which efficiently heat a substrate with fine temperature control while suppressing cracks of a liner.SOLUTION: A film formation device 100 comprises: a chamber 1; a liner 2 dividing an inner wall 1a of the chamber 1 from a space A; a main heater 9 heating a substrate 7 from below; and auxiliary heaters 18 disposed between the liner 2 and the inner wall 1a and heating the substrate 7 from above. Both of the main heater 9 and the auxiliary heaters 18 are resistor heating type heaters. The auxiliary heaters 18 includes a first auxiliary heater 18a, a second auxiliary heater 18b, and a third auxiliary heater 18c. The first auxiliary heater 18a heats the substrate 7 in cooperation with the main heater 9. The second auxiliary heater 18b and the third auxiliary heater 18c heat the liner 2 with output lower than that of the first auxiliary heater 18a.
摘要翻译：要解决的问题：提供一种在抑制衬垫的裂纹的同时，在精细的温度控制下有效地加热衬底的成膜装置和成膜方法。解决方案：成膜装置100包括：室1; 将空腔1的内壁1a与空间A分隔开的衬垫2; 从下方加热基板7的主加热器9。以及设置在衬套2和内壁1a之间的辅助加热器18，并从上方加热衬底7。主加热器9和辅助加热器18都是电阻加热型加热器。辅助加热器18包括第一辅助加热器18a，第二辅助加热器18b和第三辅助加热器18c。第一辅助加热器18a与主加热器9配合加热基板7.第二辅助加热器18b和第三辅助加热器18c以比第一辅助加热器18a低的输出加热衬套2。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2010186949A Semiconductor manufacturing apparatus and semiconductor manufacturing method 审中-公开
标题翻译：半导体制造设备和半导体制造方法
公开(公告)号：JP2010186949A
公开(公告)日：2010-08-26
申请号：JP2009031465
申请日：2009-02-13
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： IKETANI NAOHISA
IPC分类号： H01L21/205 , C23C16/455 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus and a semiconductor manufacturing method which can achieve high productivity and improve film thickness uniformity.
SOLUTION: The apparatus includes a reaction chamber 11 where a wafer w is introduced and subjected to a film forming process, a rotating body 12 on the top of which a holder 13 for holding the wafer w is located and in which heaters 15, 16 for heating the wafer w are located, a rotation drive mechanism 17 connected to the rotating body 12 to rotate the wafer w, a gas supply mechanism for supplying a predetermined flow rate of process gas from above the reaction chamber 11 into the reaction chamber 11, a gas discharging mechanism for discharging the gas from under the reaction chamber to control pressure in the reaction chamber to a predetermined value, a first rectifier plate 20 for rectifying the supplied process gas and supplying the rectified gas to the wafer w held by the holder 13, and a second rectifier plate 21 provided between an inner wall of the reaction chamber 11 and the rotating body 12 and having an opening 21a located to have different opening densities in a horizontal direction.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种能够实现高生产率和提高膜厚均匀性的半导体制造装置和半导体制造方法。解决方案：该装置包括反应室11，其中晶片w被引入并进行成膜处理，在其顶部具有用于保持晶片w的保持器13的旋转体12位于其中，加热器15 用于加热晶片w的16，连接到旋转体12以旋转晶片w的旋转驱动机构17，用于将来自反应室11的预定流量的处理气体从反应室11供给到反应室中的气体供给机构 11，一种气体排出机构，用于从反应室下方排出气体，以将反应室中的压力控制到预定值;第一整流器板20，用于整流所提供的处理气体，并将整流气体供应到由设置在反应室11的内壁和旋转体12之间并具有开口21a的第二整流板21，第二整流板21具有在水平面上具有不同开口密度的开口21a 方向。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2010171347A Film deposition method 有权
标题翻译：膜沉积法
公开(公告)号：JP2010171347A
公开(公告)日：2010-08-05
申请号：JP2009014766
申请日：2009-01-26
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： MORIYAMA YOSHIKAZU , ITO HIDEKI , ISHII SHIGEAKI , IKETANI NAOHISA , NISHIKAWA HIDEAKI
IPC分类号： H01L21/205 , C23C16/46
摘要： PROBLEM TO BE SOLVED: To provide a film deposition method by which, when an epitaxial film is deposited on a substrate supported by a susceptor, deformation of the substrate is suppressed, the deformation being caused in a period from carrying in of the substrate into a film deposition device to film deposition processing on the substrate.
SOLUTION: The film deposition method includes elevating the susceptor 20 for supporting the substrate W whose temperature has been raised from an initial position where the substrate W is subjected to the film deposition processing to receive the substrate carried in a film deposition chamber 2, lowering the susceptor 20 down to the initial position, and heating the substrate W on the susceptor 20 up to film deposition temperature to subject the substrate to vapor-phase growth reaction. In the film deposition method, the susceptor 20 whose temperature has been raised is stopped at a stop position below the carried-in substrate W before the susceptor 20 receives the substrate W. Then after the substrate W is heated by the susceptor 20 whose temperature has been raised up to predetermined temperature, the susceptor 20 is further elevated to receive the substrate W.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种成膜方法，其中当在由基座支撑的基板上沉积外延膜时，抑制基板的变形，在从将衬底置于膜沉积装置中以在衬底上进行成膜处理。解决方案：膜沉积方法包括升高基座20，用于支撑温度已经从基板W进行成膜处理的初始位置升高的基板W，以接收在成膜室2中承载的基板将基座20降低到初始位置，并且将基座20上的基板W加热到膜沉积温度以使基板进行气相生长反应。在薄膜沉积方法中，温度已经升高的基座20在基座20接收基板W之前停止在承载基板W下方的停止位置。然后，在基板W被温度为的基座20加热之后升高到预定温度，感受体20进一步升高以接收衬底W.版权所有：（C）2010，JPO＆INPIT

7. 发明专利

JP2010225731A DEPOSITION DEVICE 审中-公开
公开(公告)号：JP2010225731A
公开(公告)日：2010-10-07
申请号：JP2009069602
申请日：2009-03-23
申请人： NUFLARE TECHNOLOGY INC
发明人： SUZUKI KUNIHIKO , YAJIMA MASAMI , IKETANI NAOHISA
IPC分类号： H01L21/205 , C23C16/458
摘要： PROBLEM TO BE SOLVED: To reliably inhibit entry of reaction gas of a rotating mechanism 7 in a deposition device that supplies a deposition chamber 1, containing a susceptor for placing a substrate with the reaction gas, and forms a film on a surface of the substrate, to whose upper end a supporting member for a susceptor is connected, and has a rotary shaft 6 extending downward through a through-hole 1c opened at the bottom wall 1a of the deposition chamber, and a rotating mechanism for the rotary shaft arranged below the deposition chamber. SOLUTION: The rotating mechanism 7 has a bearing 9 arranged with a cylinder-shaped pressing member 8 installed between the bottom surface of bottom wall 1a of the deposition chamber 1 and itself, and a drive source 10 arranged down below the bearing 9. While there are formed on the pressing member 8 an annular distribution chamber 13 and an inlet 14 for introducing a purging gas into the distribution chamber 13 from one place around its periphery, there are formed two or more nozzle holes 15 for spouting the purge gas from the distribution chamber 13 to a clearance gap between the pressing member 8 and the rotary shaft 6 by having an clearance in a circumferential direction. COPYRIGHT: (C)2011,JPO&INPIT

8. 发明专利

JP2010225760A METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2010225760A
公开(公告)日：2010-10-07
申请号：JP2009070108
申请日：2009-03-23
申请人： NUFLARE TECHNOLOGY INC
发明人： ITO HIDEKI , IKETANI NAOHISA
IPC分类号： H01L21/205 , C23C16/46
摘要： PROBLEM TO BE SOLVED: To provide a method and device for manufacturing a semiconductor device, the method uniformly forming a film on a wafer by suppressing a jump phenomenon of the wafer, suppressing degradation of a yield and productivity, and improving reliability of a semiconductor device. SOLUTION: In the method for manufacturing a semiconductor, a wafer w to be subjected to film formation processing is introduced into a reactor; the wafer is supported to be separated from a support member for mounting the wafer w thereon in the film formation processing; the wafer is preliminarily heated while rotating the support member at a predetermined rotational speed with the wafer separated from the support member; the wafer is mounted on the support member; and a process gas is supplied onto the wafer while the wafer is heated at a predetermined temperature and rotated. COPYRIGHT: (C)2011,JPO&INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式