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1. 发明专利

JP2011151118A Apparatus and method for manufacturing semiconductor 审中-公开
标题翻译：装置和制造半导体的方法
公开(公告)号：JP2011151118A
公开(公告)日：2011-08-04
申请号：JP2010010055
申请日：2010-01-20
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , YAJIMA MASAMI
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing a semiconductor that suppress film deposition of reaction by-products on a wall surface of a reaction chamber, suppress a decrease in yield due to contamination of a wafer, and decrease a maintenance frequency of the reaction chamber.
SOLUTION: The apparatus includes the reaction chamber 11 in which the wafer w is introduced, a first gas supply mechanism 12 for supplying a process gas to the reaction chamber 11, a gas discharging mechanism 13 for discharging the gas from the reaction chamber 11, a cover 15 provided in an inner wall of the reaction chamber 11 and having double tube structure comprising an inner tube 15a and an outer tube 15b, a second gas supply mechanism 16 for supplying a purge gas to between the inner tube 15a and outer tube 15b, an opening portion 15d provided in the cover 15 and adapted to discharge the purge gas from the inside of the cover 15, a support member 17 for holding the wafer w, heaters 20a and 20b for heating the wafer w to a predetermined temperature, and a rotary driving control mechanism 19 for rotating the wafer w.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体的装置和方法，其抑制反应副产物在反应室的壁表面上的沉积，抑制由于晶片的污染而导致的产率下降，以及降低反应室的维护频率。解决方案：该装置包括其中引入晶片w的反应室11，用于向反应室11供应处理气体的第一气体供给机构12，用于从反应室排出气体的气体排出机构13 如图11所示，盖15设置在反应室11的内壁中，并且具有包括内管15a和外管15b的双管结构，第二气体供应机构16，用于将净化气体供应到内管15a和外管15a之间管15b，设置在盖15中并适于从盖15的内部排出净化气体的开口部15d，用于保持晶片w的支撑构件17，用于将晶片w加热到预定温度的加热器20a和20b ，以及用于旋转晶片w的旋转驱动控制机构19。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2010225731A DEPOSITION DEVICE 审中-公开
公开(公告)号：JP2010225731A
公开(公告)日：2010-10-07
申请号：JP2009069602
申请日：2009-03-23
申请人： NUFLARE TECHNOLOGY INC
发明人： SUZUKI KUNIHIKO , YAJIMA MASAMI , IKETANI NAOHISA
IPC分类号： H01L21/205 , C23C16/458
摘要： PROBLEM TO BE SOLVED: To reliably inhibit entry of reaction gas of a rotating mechanism 7 in a deposition device that supplies a deposition chamber 1, containing a susceptor for placing a substrate with the reaction gas, and forms a film on a surface of the substrate, to whose upper end a supporting member for a susceptor is connected, and has a rotary shaft 6 extending downward through a through-hole 1c opened at the bottom wall 1a of the deposition chamber, and a rotating mechanism for the rotary shaft arranged below the deposition chamber. SOLUTION: The rotating mechanism 7 has a bearing 9 arranged with a cylinder-shaped pressing member 8 installed between the bottom surface of bottom wall 1a of the deposition chamber 1 and itself, and a drive source 10 arranged down below the bearing 9. While there are formed on the pressing member 8 an annular distribution chamber 13 and an inlet 14 for introducing a purging gas into the distribution chamber 13 from one place around its periphery, there are formed two or more nozzle holes 15 for spouting the purge gas from the distribution chamber 13 to a clearance gap between the pressing member 8 and the rotary shaft 6 by having an clearance in a circumferential direction. COPYRIGHT: (C)2011,JPO&INPIT

3. 发明专利

JP2009135228A Vapor phase growth apparatus and vapor phase growth method 有权
标题翻译：蒸气相生长装置和蒸汽相生长方法
公开(公告)号：JP2009135228A
公开(公告)日：2009-06-18
申请号：JP2007309271
申请日：2007-11-29
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： HIRATA HIRONOBU , YAJIMA MASAMI
IPC分类号： H01L21/205 , C23C16/458 , H01L21/683
CPC分类号： C30B25/12 , C23C16/4584 , C23C16/4585 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus capable of improving the yield rate of wafers by stopping infiltration of metal contaminants generated below a horizontal disk-like susceptor, and to provide a vapor phase growth method. SOLUTION: The vapor phase growth apparatus includes a holder 10 having an annular shape and on which a wafer W can be placed, a disk-shaped susceptor 5 on which the holder 10 can be placed and provided on an upper surface thereof with circumferential steps inscribed in an inner circumferential edge of the annular shape of the holder 10, a rotation driving mechanism 6 for rotating the wafer W at a predetermined rotational speed, a heating mechanism 8 for heating the wafer W, and a wafer push-up mechanism 9 for pushing up an undersurface of a projection 10a provided to a peripheral edge of the holder 10 outside the rotation driving mechanism 6. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种气相生长装置，其能够通过停止在水平圆盘状基座之下产生的金属污染物的渗透而提高晶片的产率，并提供气相生长方法。气相生长装置包括具有环形形状的保持件10，可以放置晶片W;盘形基座5，其上可以放置保持器10并在其上表面上设置有圆盘形基座5; 在保持器10的环状内周缘内的圆周台阶，用于以预定旋转速度旋转晶片W的旋转驱动机构6，用于加热晶片W的加热机构8和晶片上推机构 9用于将设置在保持器10的外围边缘的突起10a的下表面推到旋转驱动机构6的外部。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2009135201A Semiconductor manufacturing device and semiconductor manufacturing method 有权
标题翻译：半导体制造设备和半导体制造方法
公开(公告)号：JP2009135201A
公开(公告)日：2009-06-18
申请号：JP2007308851
申请日：2007-11-29
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： YAJIMA MASAMI
IPC分类号： H01L21/205 , C23C16/458 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device and a manufacturing method, securely supporting a wafer at the time of high speed rotation and forming a uniform film on the wafer. SOLUTION: The semiconductor manufacturing device is provided with: a first supporting member 17 supporting the wafer (w) from a lower face side at a prescribed position in a reaction chamber 11; and second supporting members 18 which are arranged above the first supporting member 17 and support a whole outer peripheral edge of the wafer (w) from the upper face side. The wafer (w) is heated while it is rotated with the first and second supporting members, and the film is uniformly formed. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供半导体制造装置和制造方法，在高速旋转时可靠地支撑晶片并在晶片上形成均匀的膜。解决方案：半导体制造装置设置有：在反应室11中的规定位置从下表面侧支撑晶片（w）的第一支撑部件17; 以及第二支撑构件18，其布置在第一支撑构件17的上方，并且从上表面侧支撑晶片（w）的整个外周边缘。晶片（w）在与第一和第二支撑构件一起旋转的同时加热，并且膜均匀地形成。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2009135159A Vapor phase growth apparatus and vapor phase growth method 有权
标题翻译：蒸气相生长装置和蒸汽相生长方法
公开(公告)号：JP2009135159A
公开(公告)日：2009-06-18
申请号：JP2007308182
申请日：2007-11-29
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： MORIYAMA YOSHIKAZU , YAJIMA MASAMI , HIRATA HIRONOBU , MITANI SHINICHI
IPC分类号： H01L21/205 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus and method improving growth speed for growing a vapor phase growth film.
SOLUTION: An epitaxial growth apparatus 100 includes: a chamber 120 where a substrate is supported inside; a shower head 130 that is disposed in the chamber 120 and supplies source gas toward the substrate; a space S1 between the shower head 130 and the surface of the substrate; and a channel 126 that connects a space S2 where gas exhausted from the space S1 passes and regenerates gas flowing from the space S2 to the space S1. Therefore, the growth speed of a film to be formed can be improved.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种提高生长气相生长膜的生长速度的气相生长装置和方法。解决方案：外延生长装置100包括：室120，其中衬底被支撑在室内; 淋浴头130，其设置在室120中，并将源气体朝向基板供给; 淋浴头130与基板表面之间的空间S1; 连接从空间S1排出的气体通过的空间S2的通道126，再生从空间S2向空间S1流动的气体。因此，可以提高要形成的膜的生长速度。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2009071017A Apparatus and method for vapor phase deposition 审中-公开
标题翻译：用于蒸气相沉积的装置和方法
公开(公告)号：JP2009071017A
公开(公告)日：2009-04-02
申请号：JP2007237542
申请日：2007-09-13
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： MORIYAMA YOSHIKAZU , NAKAZAWA SEIICHI , SUZUKI KUNIHIKO , YAJIMA MASAMI
IPC分类号： H01L21/205 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for vapor phase deposition that improve the uniformity in film thickness and impurity concentration over the whole surface of a vapor phase deposited film formed on a wafer.
SOLUTION: The apparatus for vapor phase deposition has a chamber 101, a gas feed section 103, a gas distribution plate 102 that segments the inside of the chamber 101 into a buffer region 130 and a reaction region 140 and distributes process gas with a formed through-hole 120, a gas shielding plate 104 that is provided at a given clearance between the gas distribution plate 102 at the buffer region 130 to control a flow rate of the process gas passing through the gas distribution plate 102, a holder 106 that is provided at the reaction region 140 to hold a wafer 105, and a gas exhaust section 110 for exhausting the process gas out of the chamber 101. Such an arrangement can adjust a flow rate of the process gas to be supplied to the whole surface on which a vapor phase deposited film of the wafer 105 is formed, improving the uniformity in film thickness and impurity concentration over the whole surface of the wafer 105.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种气相沉积的装置和方法，其提高在晶片上形成的气相沉积膜的整个表面上的膜厚度和杂质浓度的均匀性。气相沉积装置具有室101，气体供给部分103，气体分配板102，其将室101的内部分隔成缓冲区域130和反应区域140，并将工艺气体与形成的通孔120，气体屏蔽板104，其设置在缓冲区域130处的气体分配板102之间的给定间隙处，以控制通过气体分配板102的处理气体的流量;保持器106 设置在反应区域140以保持晶片105，以及用于将处理气体排出室101的排气部分110.这种布置可以调节供给到整个表面的处理气体的流量在其上形成晶片105的气相沉积膜，改善晶片105整个表面上的膜厚度和杂质浓度的均匀性。（C）2009年，JPO和INPIT

7. 发明专利

JP2011171450A Film deposition apparatus and method 审中-公开
标题翻译：电影沉积装置和方法
公开(公告)号：JP2011171450A
公开(公告)日：2011-09-01
申请号：JP2010032742
申请日：2010-02-17
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , YAJIMA MASAMI
IPC分类号： H01L21/205 , C23C16/44
CPC分类号： C23C16/4402 , C23C16/455 , C23C16/4585
摘要： PROBLEM TO BE SOLVED: To prevent a silicon crystal from being formed on a liner for protecting the inner wall of a film deposition chamber.
SOLUTION: A supply section 4 of a process gas 25 is formed on the top of the chamber 1, and a rotatable susceptor 7 for placing a semiconductor substrate 6 and a cylindrical liner 2 for covering the inner wall of the chamber 1 are formed in the inside, respectively. The liner 2 includes a barrel section 32, inside which the susceptor 7 is placed; a head section 31, which is located on the side of the supply section 4 and smaller in a cross-sectional area than the barrel section 30; and a stepped section 32 which connects the barrel section 30 and the head section 31. The susceptor 7 is equipped with a donut-like disk 38 on a susceptor body 36; while the process gas 25 is made to flow downward from the supply section 4 to the inside of the chamber 1, while the periphery of the stepped section 32 of the liner 2 is covered by the donut-like disc 38, thereby forming a crystalline film on the semiconductor substrate 6 on the susceptor 7 arranged in a lower part.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了防止在用于保护成膜室的内壁的衬垫上形成硅晶体。解决方案：处理气体25的供应部分4形成在室1的顶部，并且用于放置半导体衬底6的可旋转感受器7和用于覆盖室1的内壁的圆柱形衬垫2是分别形成在里面。衬套2包括筒部32，其中放置基座7; 头部31，其位于供给部4侧，并且比筒部30的截面积小; 以及连接筒部30和头部31的阶梯部32.基座7在基座体36上配备有环状盘38，同时使处理气体25从供应部分4向下流动到室1的内部，同时衬套2的台阶部分32的周边被环形盘38覆盖，由此形成结晶膜在布置在下部的基座7上的半导体基板6上。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2010157629A Film forming device 有权
标题翻译：电影制作装置
公开(公告)号：JP2010157629A
公开(公告)日：2010-07-15
申请号：JP2008335419
申请日：2008-12-27
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： MORIYAMA YOSHIKAZU , IKETANI NAOHISA , YAJIMA MASAMI
IPC分类号： H01L21/205 , C23C16/44 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a film forming device which allows a substrate to be mounted on a susceptor at a suitable position so that the substrate after film formation processing does not stick on the susceptor. SOLUTION: The film forming device 1 includes a film formation chamber 2 which incorporates the susceptor 20 mounted with the substrate W and performs the film formation processing on the substrate W while rotating the susceptor 20, a conveyance chamber 4 connected to the film formation chamber 2, a substrate standby chamber 8 connected to the conveyance chamber 4, and a conveyance means 17 provided in the conveyance chamber 4 and for conveying the substrate W between the film formation chamber 2 and substrate standby chamber 8. Further, the film forming device includes a first positioning mechanism 5 configured to position the center of the substrate W in the substrate standby chamber 8 at a first reference position and a second positioning mechanism 6 configured to position the center of the substrate W having been conveyed from the substrate standby chamber 8 at a second reference position in the film formation chamber 2, the second reference position being in the center of the susceptor 20. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种成膜装置，其允许将基板安装在基座上的合适位置，使得成膜处理后的基板不粘附在基座上。解决方案：成膜装置1包括成膜室2，其包含安装有基板W的基座20，并且在旋转基座20的同时对基板W进行成膜处理，连接到膜的输送室4 形成室2，连接到输送室4的基板备用室8和设置在输送室4中并用于在成膜室2和基板备用室8之间输送基板W的输送装置17.此外，成膜装置包括：第一定位机构5，被配置为将基板W的中心定位在基板备用室8中的第一基准位置;以及第二定位机构6，其配置成将基板W的中心从基板备用室在成膜室2中的第二参考位置处的第二参考位置处于第二基准位置，第二参考位置位于成膜室2的中心（C）2010，JPO＆INPIT

9. 发明专利

JP2009283904A Coating apparatus and coating method 审中-公开
标题翻译：涂装和涂装方法
公开(公告)号：JP2009283904A
公开(公告)日：2009-12-03
申请号：JP2009042180
申请日：2009-02-25
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： MORIYAMA YOSHIKAZU , NISHIKAWA HIDEAKI , YAJIMA MASAMI , FURUYA HIROSHI , MITANI SHINICHI , NISHIBAYASHI MICHIO
IPC分类号： H01L21/205 , C23C16/458 , H01L21/67
CPC分类号： H01L21/68785 , C23C16/4412 , C23C16/4584 , C23C16/4586 , H01L21/67109 , H01L21/6838 , H01L21/68735
摘要： PROBLEM TO BE SOLVED: To provide a coating apparatus capable of performing stable high-speed rotation of a substrate, and to provide a coating method that ensures to form a coating on the substrate while performing stable high-speed rotation of the substrate. SOLUTION: A coating apparatus 100 has a susceptor 102 for supporting a silicon wafer 101, and a rotating portion 104 for rotating the susceptor 102. The rotating portion 104 is covered on top with the susceptor 102 to form a P 2 region. The contact surface 105 of the susceptor 102 with the silicon wafer 101 has many holes 106 therein. The silicon wafer 101 is attached to the susceptor 102 by evacuating gas from the P 2 region. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够进行基板的稳定的高速旋转的涂布装置，并且提供一种确保在基板上形成涂层同时进行基板的稳定高速旋转的涂布方法。解决方案：涂覆设备100具有用于支撑硅晶片101的基座102和用于旋转基座102的旋转部分104.旋转部分104在顶部被基座102覆盖以形成P 2 区域。具有硅晶片101的基座102的接触表面105在其中具有许多孔106。硅片101通过从P 2 区域排出气体而附接到基座102。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009135158A Vapor phase growth apparatus and vapor phase growth method 有权
标题翻译：蒸气相生长装置和蒸汽相生长方法
公开(公告)号：JP2009135158A
公开(公告)日：2009-06-18
申请号：JP2007308181
申请日：2007-11-29
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： MORIYAMA YOSHIKAZU , YAJIMA MASAMI , HIRATA HIRONOBU , MITANI SHINICHI
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus and method suppressing the sticking of a substrate and a support member.
SOLUTION: An epitaxial growth device 100 includes: a holder 110 for supporting a substrate; a chamber 120 for disposing the holder inside and forming a film containing Si on the substrate; a supply section 160 for supplying HCl gas to the substrate from the back side of the substrate; and a wafer heating source 150 for heating the substrate from the machining surface side of the substrate. Therefore, the sticking of the substrate and holder 110 can be suppressed.
COPYRIGHT: (C)2009,JPO&INPIT

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