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1. 发明专利

JP2015005658A 炭化珪素半導体成膜装置およびそれを用いた成膜方法有权
标题翻译：硅碳化硅半导体膜沉积装置和使用其的膜沉积方法
公开(公告)号：JP2015005658A
公开(公告)日：2015-01-08
申请号：JP2013130836
申请日：2013-06-21
申请人：株式会社デンソー , Denso Corp , 一般財団法人電力中央研究所 , Central Research Institute Of Electric Power Industry , 株式会社ニューフレアテクノロジー , Nuflare Technology Inc , トヨタ自動車株式会社 , Toyota Motor Corp , 株式会社豊田中央研究所 , Toyota Central R&D Labs Inc
发明人： FUJIBAYASHI HIROAKI , NAITO MASAMI , ITO MASAHIKO , KAMATA ISAO , TSUCHIDA SHUICHI , ITO HIDEKI , ADACHI AYUMI , NISHIKAWA KOICHI
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： C30B25/14 , C23C16/325 , C23C16/45519 , C23C16/45548 , C23C16/45553 , C23C16/45574 , C23C16/45587 , C23C16/4584 , C23C16/4586 , C30B25/165 , C30B29/36 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/02598 , H01L21/0262
摘要：【課題】SiC半導体におけるパーティクル発生の抑制と、膜厚および濃度の面内均一性の両立を図る。【解決手段】各分離部屋41〜43に各種ガスが別々に導入されるようにし、Si原料含有ガスとC原料含有ガスが第1、第2分離部屋41、42から延びる供給路41b、42を通じて独立して成長空間に供給されるようにする。また、第3分離部屋43から、供給路43bを通じて、Si原料含有ガスとC原料含有ガスの間に原料ガス以外のガスとなる第3ガスが導入されるようにする。これにより、供給路41b、42bの出口を出たのち、成長空間において初めて各種ガスが混じるようにできる。また、第3ガスが第1、第2ガスの間に流されることから、第1、第2ガスの拡散が低減される。このため、原料ガスが供給路41b、42b外側に拡散することを抑制でき、不要なSiC生成物が形成されることを抑制できる。【選択図】図1
摘要翻译：要解决的问题：为了实现对SiC半导体中的颗粒产生的抑制和膜厚度和浓度的面内均匀性的解决方案。解决方案：各种气体被独立地引入各个分离的室41-43中，并且含有Si材料的气体含有C材料的气体通过从第一和第二分离室41,42延伸的供给路径41b，42而独立地供给到生长空间。作为除了材料g以外的气体的第三气体被引入含有Si材料的气体和含有C材料的气体。因此，在从供给路径41b，42b的出口排出后，在生长空间中首先将各种气体混合。由于允许第三气体在第一气体和第二气体之间流动，所以第一气体和第二气体的扩散减少。由此，可以抑制原料气体向供给通路41b，42b的外部扩散，能够抑制不必要的SiC制品的形成。

2. 发明专利

JP2013030758A Film formation device and film formation method 有权
标题翻译：胶片形成装置和胶片形成方法
公开(公告)号：JP2013030758A
公开(公告)日：2013-02-07
申请号：JP2012135435
申请日：2012-06-15
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー , Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： SUZUKI KUNIHIKO , ITO HIDEKI , IKETANI NAOHISA , TSUCHIDA SHUICHI , KAMATA ISAO , ITO MASAHIKO , NAITO MASAMI , FUJIBAYASHI HIROAKI , ADACHI AYUMI , NISHIKAWA KOICHI
IPC分类号： H01L21/205 , C23C16/46
CPC分类号： C30B25/10
摘要： PROBLEM TO BE SOLVED: To provide a film formation device and a film formation method which efficiently heat a substrate with fine temperature control while suppressing cracks of a liner.SOLUTION: A film formation device 100 comprises: a chamber 1; a liner 2 dividing an inner wall 1a of the chamber 1 from a space A; a main heater 9 heating a substrate 7 from below; and auxiliary heaters 18 disposed between the liner 2 and the inner wall 1a and heating the substrate 7 from above. Both of the main heater 9 and the auxiliary heaters 18 are resistor heating type heaters. The auxiliary heaters 18 includes a first auxiliary heater 18a, a second auxiliary heater 18b, and a third auxiliary heater 18c. The first auxiliary heater 18a heats the substrate 7 in cooperation with the main heater 9. The second auxiliary heater 18b and the third auxiliary heater 18c heat the liner 2 with output lower than that of the first auxiliary heater 18a.
摘要翻译：要解决的问题：提供一种在抑制衬垫的裂纹的同时，在精细的温度控制下有效地加热衬底的成膜装置和成膜方法。解决方案：成膜装置100包括：室1; 将空腔1的内壁1a与空间A分隔开的衬垫2; 从下方加热基板7的主加热器9。以及设置在衬套2和内壁1a之间的辅助加热器18，并从上方加热衬底7。主加热器9和辅助加热器18都是电阻加热型加热器。辅助加热器18包括第一辅助加热器18a，第二辅助加热器18b和第三辅助加热器18c。第一辅助加热器18a与主加热器9配合加热基板7.第二辅助加热器18b和第三辅助加热器18c以比第一辅助加热器18a低的输出加热衬套2。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2013145873A Deposition apparatus and deposition method 有权
标题翻译：沉积装置和沉积方法
公开(公告)号：JP2013145873A
公开(公告)日：2013-07-25
申请号：JP2012265217
申请日：2012-12-04
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー , Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： ITO HIDEKI , SUZUKI KUNIHIKO , SATO HIROSUKE , TSUCHIDA SHUICHI , KAMATA ISAO , ITO MASAHIKO , NAITO MASAMI , FUJIBAYASHI HIROAKI , ADACHI AYUMI , NISHIKAWA KOICHI
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： C30B25/165 , C30B25/14
摘要： PROBLEM TO BE SOLVED: To provide a deposition apparatus and a deposition method, which inhibit reaction of a source gas on a shower plate.SOLUTION: A deposition apparatus 100 supplies a plurality of kinds of gases toward a substrate 101 in a chamber 103 by using a shower plate 124. The shower plate 124 includes: a plurality of gas passages 121 which extend in the shower plate along a first surface on the substrate 101 side and which are connected to gas tubes 131 for supplying the plurality of kinds of gases, respectively; and a plurality of gas jetting ports 129 which are pierced so as to communicate the plurality of gas passages 121 and the inside of the chamber 103 on the first surface side. In the deposition apparatus 100, the plurality of kinds of gases which are respectively supplied from the gas tubes 131 to the gas passages 121 of the shower plate 124, and which are supplied from the gas jetting ports 129 to the substrate 101, respectively, without being mixed near and inside the shower plate 124.
摘要翻译：要解决的问题：提供一种抑制源气体在喷淋板上的反应的沉积设备和沉积方法。解决方案：沉积设备100通过使用多个气体朝向室103中的基板101提供多种气体淋浴板124.淋浴板124包括：多个气体通道121，其沿着基板101侧的第一表面在淋浴板中延伸并分别连接到用于供应多种气体的气体管131 ; 以及多个气体喷射口129，其被刺穿以便在第一表面侧上连通多个气体通道121和室103的内部。在沉积装置100中，分别从气体管131向喷淋板124的气体通道121供给并从气体喷射口129分别供给到基板101的多种气体，没有在淋浴板124附近和内部混合。

4. 发明专利

JP2014187282A Film deposition apparatus and a film forming method 有权
标题翻译：薄膜成型装置和薄膜成型方法
公开(公告)号：JP2014187282A
公开(公告)日：2014-10-02
申请号：JP2013062150
申请日：2013-03-25
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー , Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： ITO HIDEKI , TSUCHIDA SHUICHI , KAMATA ISAO , ITO MASAHIKO , NAITO MASAMI , FUJIBAYASHI HIROAKI , ADACHI AYUMI , NISHIKAWA KOICHI
IPC分类号： H01L21/205 , C23C16/42 , C23C16/44 , C23C16/46
CPC分类号： H01L21/68785 , C23C16/4408 , C30B25/10 , C30B25/14 , C30B25/16 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a film forming apparatus and a film forming method, capable of preventing a corrosive gas from contaminating a space including a lower heater and preventing the lower heater from being corroded by the corrosive gas when a substrate is carried in or carried out, and increasing productivity by making it possible to carry in or carry out the substrate at a high temperature.SOLUTION: When a substrate is carried in or carried out, a space in which film forming process is performed, a space including a lower heater 16, and a space including an upper heater 19 are made to be an atmosphere of an inert gas.
摘要翻译：要解决的问题：提供一种成膜设备和成膜方法，其能够防止腐蚀性气体污染包括下加热器的空间，并且当衬底被携带时防止下加热器被腐蚀性气体腐蚀，或实现并且通过使得可以在高温下携带或执行基板来提高生产率。解决方案：当衬底被携带或执行时，进行成膜处理的空间包括较低的加热器16和包括上加热器19的空间被制成惰性气体的气氛。

5. 发明专利

JP2012250888A SiC SINGLE CRYSTAL, METHOD FOR PRODUCING THE SAME, SiC WAFER, AND SEMICONDUCTOR DEVICE 有权
标题翻译： SiC单晶，其制造方法，SiC WAFER和SEMICONDUCTOR DEVICE
公开(公告)号：JP2012250888A
公开(公告)日：2012-12-20
申请号：JP2011125886
申请日：2011-06-05
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Showa Denko Kk , 昭和電工株式会社
发明人： GUNJISHIMA TSUKURU , SHIGEFUJI KEISUKE , URAGAMI YASUSHI , YAMADA MASANORI , ADACHI AYUMI , KOBAYASHI MASAKAZU
IPC分类号： C30B29/36 , H01L21/203
CPC分类号： C30B23/025 , C30B23/005 , C30B29/36 , H01L21/02378 , H01L21/0243 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/02609 , H01L29/1608 , Y10T428/21
摘要： PROBLEM TO BE SOLVED: To provide an SiC single crystal having few anisotropic crystals or heterogeneous polymorphic crystals, allowing cutting out of a large-diameter {0001} plane substrate, and to provide a method for producing the SiC single crystal, and an SiC wafer cut out from such an SiC single crystal.SOLUTION: When producing an SiC single crystal having a large-diameter {0001} plane by repeating a-plane growth, the a-plane of the SiC single crystal is allowed to grow so that the ratio S(=S×100/S) of the area (S) of a Si plane side facet region to the whole area (S) of the growth plane is kept at 20% or less.
摘要翻译：要解决的问题：为了提供一种具有很少的各向异性晶体或异相多晶体的SiC单晶，可以切割出大直径ä10001平面衬底，并提供一种SiC单晶的制造方法，从这种SiC单晶切出SiC晶片。解决方案：通过重复a面生长制造具有大直径ä0001}面的SiC单晶时，可以使SiC单晶的a面成长，使S （= S 1 ×100 / S 2 ）（S 2 ）的Si平面侧面区域的“POST”> 1 保持在20％以下。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2012240906A Apparatus for manufacturing silicon carbide single crystal, and method for manufacturing the silicon carbide single crystal 有权
标题翻译：用于制造单晶碳化硅的装置，以及用于制造碳化硅单晶的方法
公开(公告)号：JP2012240906A
公开(公告)日：2012-12-10
申请号：JP2011116058
申请日：2011-05-24
申请人： Showa Denko Kk , 昭和電工株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社
发明人： MATSUSE AKIHIRO , GUNJISHIMA TSUKURU , YAMADA MASANORI , ADACHI AYUMI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a silicon carbide single crystal, which can manufacture a high quality and long silicon carbide single crystal, and to provide a method for manufacturing the silicon carbide single crystal.SOLUTION: In the apparatus for manufacturing the silicon carbide single crystal, a silicon carbide single crystal 71 is grown on a silicon carbide seed crystal 35 attached to a pedestal 33 in a crucible 31 by supplying a raw material gas onto the growth surface 35a of the silicon carbide seed crystal 35. The apparatus is configured so as to reduce the thickness of the pedestal 33, and the thickness of the pedestal 33 is reduced in accordance with the growth of the silicon carbide single crystal 71.
摘要翻译：要解决的问题：提供一种可制造高质量和长的碳化硅单晶的碳化硅单晶的制造装置，并提供一种制造碳化硅单晶的方法。解决方案：在用于制造碳化硅单晶的装置中，碳化硅单晶71通过将原料气体供应到生长表面上而生长在安装在坩埚31中的基座33上的碳化硅晶种35上 35a。该装置被配置为减小基座33的厚度，并且底座33的厚度根据碳化硅单晶71的增长而减小。COPYRIGHT （C）2013，JPO＆INPIT

7. 发明专利

JP2011219336A Method and apparatus for manufacturing silicon carbide single crystal 有权
标题翻译：用于制造单晶碳化硅的方法和装置
公开(公告)号：JP2011219336A
公开(公告)日：2011-11-04
申请号：JP2010092960
申请日：2010-04-14
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： URAGAMI YASUSHI , KONDO HIROYUKI , ADACHI AYUMI , GUNJISHIMA TSUKURU
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a silicon carbide single crystal which allows to supply an appropriate amount of carbon atoms to a SiC single crystal while suppressing mixing of an inclusion (a large mass) of carbon powder discharged from a crucible with the SiC single crystal.SOLUTION: In a hollow of a crucible 4, a cylindrical material 10 which has a diameter smaller than the inner diameter of a container body 2 and is made of metal carbide is disposed apart from an inner wall 2a of the container body 2 along the inner wall 2a on a powder raw material 8. While, on a lid member 3, a coating film 3b of metal carbide is formed on the side of the container body 2 from a seed crystal 7 of an inner wall 3a of the lid member 3. This suppresses discharge of masses of carbon powder from the lid member 3, and an appropriate amount of the carbon powder discharged from the inner wall 2a of the container body 2 is supplied to the SiC single crystal 9 during growth.
摘要翻译：要解决的问题：提供一种用于制造碳化硅单晶的装置，其允许向SiC单晶提供适量的碳原子，同时抑制从碳化硅单晶排出的夹杂物（大量）的碳粉的混合具有SiC单晶的坩埚。解决方案：在坩埚4的中空中，直径小于容器主体2的内径并且由金属碳化物制成的圆柱形材料10与容器主体2的内壁2a分开设置沿着内壁2a在粉末原料8上。同时，在盖构件3上，从容器主体2的内壁3a的晶种7形成金属碳化物的涂膜3b 从而抑制碳粉末从盖部件3的排出，在生长时向碳化硅单晶9供给适当量的从容器主体2的内壁2a排出的碳粉末。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2011219294A Method for producing silicon carbide single crystal 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：JP2011219294A
公开(公告)日：2011-11-04
申请号：JP2010088627
申请日：2010-04-07
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： KONDO HIROYUKI , ADACHI AYUMI , GUNJISHIMA TSUKURU
IPC分类号： C30B29/36 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a SiC single crystal, by which cracking and distortion of the SiC single crystal are suppressed.SOLUTION: In the method for producing a SiC single crystal, projection growth wherein the SiC single crystal 6 is grown to have such a projection shape that the central part of the SiC single crystal 6 is projected from the outer edge part and recess growth wherein the central part of the SiC single crystal 6 is recessed from the outer edge part are performed in order. A tensile stress is generated in the vicinity of the central part of the SiC single crystal 6 and a compression stress is generated in the outer edge part during the projection growth, and a compression stress is generated in the vicinity of the central part of the SiC single crystal 6 and a tensile stress is generated in the outer edge part during the recess growth. Then, a reverse stress is generated when the SiC single crystal 6 is cooled. Thereby, when the SiC single crystal 6 is cooled, a region where both of the compression stress and tensile stress are generated is provided in the vicinity of the central part of the SiC single crystal 6, and a region where both of the compression stress and tensile stress are generated is provided similarly in the outer edge part. Consequently, it is possible to suppress cracking and distortion of the SiC single crystal during cooling.
摘要翻译：待解决的问题：提供一种SiC单晶的制造方法，其中SiC单晶的破裂和变形被抑制。解决方案：在SiC单晶的制造方法中，SiC单晶6生长为具有使SiC单晶6的中央部从外缘部突出的突起形状的突起生长和凹部其中SiC单晶6的中心部分从外边缘部分凹陷的生长依次进行。在SiC单晶6的中央部附近产生拉伸应力，在投影生长期间在外缘部产生压缩应力，在SiC的中心部附近产生压缩应力单晶6，并且在凹部生长期间在外边缘部分产生拉伸应力。然后，当SiC单晶6被冷却时产生反向应力。因此，当SiC单晶6被冷却时，在SiC单晶6的中央部附近设置压缩应力和拉伸应力两者的区域，压缩应力和在外边缘部分类似地设置拉伸应力。因此，可以抑制冷却时SiC单晶的开裂和变形。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2012240859A SiC SINGLE CRYSTAL, SiC WAFER, AND SEMICONDUCTOR DEVICE 有权
标题翻译： SiC单晶，SiC波导和半导体器件
公开(公告)号：JP2012240859A
公开(公告)日：2012-12-10
申请号：JP2011109773
申请日：2011-05-16
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社 , Denso Corp , 株式会社デンソー
发明人： GUNJISHIMA TSUKURU , URAGAMI YASUSHI , ADACHI AYUMI
IPC分类号： C30B29/36 , H01L29/161
CPC分类号： H01L29/30 , C30B23/025 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0254 , H01L29/045 , H01L29/1608 , H01L29/32 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide an SiC single crystal in which basal plane dislocations are highly oriented, and to provide an SiC wafer and a semiconductor device, that are produced from such an SiC single crystal.SOLUTION: The SiC single crystal has one or more orientation regions where linearity of basal plane dislocations is high, and the basal plane dislocations are oriented in the three crystallographically equivalent directions. The SiC wafer and the semiconductor device are manufactured from such an SiC single crystal. This SiC single crystal can be manufactured by using a seed crystal that has a small offset angle on the {0001} plane highest portion side and a large offset angle on the offset direction downstream side, and by growing a new crystal on the seed crystal.
摘要翻译：要解决的问题：为了提供由这种SiC单晶制成的SiC基板，其中基面位错高度取向，并提供SiC晶片和半导体器件。解决方案：SiC单晶具有一个或多个取向区域，其中基面位错的线性度较高，并且基面位错在三个晶体学等效的<11-20>方向上取向。 SiC晶片和半导体器件由这种SiC单晶制造。该SiC单晶可以通过使用在ä0001}平面最高部分侧具有小的偏移角的晶种和在偏移方向下游侧具有大的偏移角，并且通过在晶种上生长新的晶体来制造。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2012201584A Apparatus and method for producing silicon carbide single crystal, and growth method thereof 有权
标题翻译：用于生产碳化硅单晶的装置和方法及其生长方法
公开(公告)号：JP2012201584A
公开(公告)日：2012-10-22
申请号：JP2011070833
申请日：2011-03-28
申请人： Showa Denko Kk , Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 昭和電工株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： MASUDA TAKASHI , KONDO HIROYUKI , HIROSE FUSAO , GUNJISHIMA TSUKURU , ADACHI AYUMI
IPC分类号： C30B29/36 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for producing a silicon carbide single crystal, capable of producing a lengthy single crystal having a high quality, and to provide a growth method thereof.SOLUTION: In this apparatus for producing a silicon carbide single crystal including a guide member 7 for guiding raw material gas to the silicon carbide seed crystal 5 side, a crucible 3 comprises a crucible upper part 3a and a crucible lower part 3b which are relatively movable mutually in the vertical direction, and the guide member 7 comprises a guide member upper part 7a fixed to the crucible upper part 3a and a guide member lower part 7b fixed to the crucible lower part 3b, and a hole part 10 is provided at least on either of the guide member upper part 7a and the guide member lower part 7b, and the guide member upper part 7a and the guide member lower part 7b are arranged so that the hole part 10 is opened/closed according to relative movement of the crucible upper part 3a and the crucible lower part 3b.
摘要翻译：要解决的问题：提供能够生产具有高质量的长单晶的生产碳化硅单晶的装置和方法，并提供其生长方法。解决方案：在这种用于制造包括用于将原料气体引导到碳化硅晶种5侧的引导构件7的碳化硅单晶的装置中，坩埚3包括坩埚上部3a和坩埚下部3b，相对于上下方向相对移动，导向部件7具有固定在坩埚上部3a上的引导部件上部7a和固定于坩埚下部3b的引导部件下部7b，并且设置有孔部10 至少在引导构件上部7a和引导构件下部7b中的任一个上，并且引导构件上部7a和引导构件下部7b布置成使得孔部10根据相对运动而打开/关闭坩埚上部3a和坩埚下部3b。版权所有（C）2013，JPO＆INPIT

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