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1. 发明授权

US07101259B2 Polishing method and apparatus 失效
公开(公告)号：US07101259B2
公开(公告)日：2006-09-05
申请号：US10694047
申请日：2003-10-28
申请人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
发明人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
IPC分类号： B24B49/00 , B24B51/00 , H01L21/00 , B24B1/00
CPC分类号： B24B37/345
摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

2. 发明授权

US06667238B1 Polishing method and apparatus 有权
标题翻译：抛光方法和设备
公开(公告)号：US06667238B1
公开(公告)日：2003-12-23
申请号：US09545504
申请日：2000-04-07
申请人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
发明人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
IPC分类号： H01L2100
CPC分类号： B24B37/345
摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.
摘要翻译：抛光装置用于化学机械抛光形成在诸如半导体晶片的基板上的铜（Cu）层，然后清洁抛光的基板。抛光装置具有研磨部，该研磨部具有带有抛光面的转盘和用于保持基板的顶环，并将基板按压在研磨面上，以对其上具有半导体器件的表面进行抛光;以及清洗部，被抛光清洗部具有电解供水装置，用于向基板供给电解水，以清洗基板的抛光表面，同时向基板供应电解水。

3. 发明授权

US06783658B2 Electropolishing method 失效
标题翻译：电抛光方法
公开(公告)号：US06783658B2
公开(公告)日：2004-08-31
申请号：US10261949
申请日：2002-10-02
申请人： Yoshitaka Matsui , Hiroshi Kosukegawa , Masako Kodera , Naoto Miyashita
发明人： Yoshitaka Matsui , Hiroshi Kosukegawa , Masako Kodera , Naoto Miyashita
IPC分类号： B23H1100
CPC分类号： C25F3/00 , H01L21/32115
摘要： A target material is electropolished by applying a voltage between an anode electrode and a counter electrode while bringing the anode electrode into contact with the surface of the target material. The anode electrode is formed of an electrode material having a current density not higher than 10 mA/cm2 upon application of a voltage of +2.5V vs. silver/silver chloride electrode within a 0.1 M perchloric acid solution in an electrochemical measurement using a potentiostat.
摘要翻译：通过在阳极电极和对电极之间施加电压同时使阳极电极与靶材料的表面接触来对目标材料进行电抛光。在电化学测量中，在0.1M高氯酸溶液内施加+ 2.5V的电压与银/氯化银电极相比，阳极电极由电流密度不高于10mA / cm 2的电极材料形成使用恒电位仪

4. 发明授权

US07005382B2 Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing 有权
标题翻译：用于化学机械抛光的水分散体，化学机械抛光工艺，半导体器件的生产过程以及用于制备用于化学机械抛光的水分散体的材料
公开(公告)号：US07005382B2
公开(公告)日：2006-02-28
申请号：US10694890
申请日：2003-10-29
申请人： Kazuo Nishimoto , Tatsuaki Sakano , Akihiro Takemura , Masayuki Hattori , Nobuo Kawahashi , Naoto Miyashita , Atsushi Shigeta , Yoshitaka Matsui , Kazuhiko Ida
发明人： Kazuo Nishimoto , Tatsuaki Sakano , Akihiro Takemura , Masayuki Hattori , Nobuo Kawahashi , Naoto Miyashita , Atsushi Shigeta , Yoshitaka Matsui , Kazuhiko Ida
IPC分类号： B24B1/00
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/02024
摘要： Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium. The second aqueous dispersion is composed of a first aqueous dispersion material (I) obtained by mixing a water-soluble quaternary ammonium salt and an inorganic acid salt into an aqueous medium, and a second aqueous dispersion material (II) obtained by mixing a water-soluble polymer and another basic organic compound other than the water-soluble quaternary ammonium salt into an aqueous medium. Abrasive grains are contained in at least one of the aqueous dispersion materials.
摘要翻译：提供了用于化学机械抛光的水分散体，其平坦化待抛光的表面并具有高的储存稳定性，当抛光不同材料的表面时选择性优异的化学机械抛光工艺以及半导体器件的生产工艺。第一种水性分散体含有水溶性季铵盐，无机酸盐，磨粒和水性介质。第二水性分散体至少包含水溶性季铵盐，除水溶性季铵盐以外的其它碱性有机化合物，无机酸盐，水溶性聚合物，磨料颗粒和水性介质。第二水性分散体由通过将水溶性季铵盐和无机酸盐混合到水性介质中而得到的第一水分散体（I）和第二水分散体（II）水溶性聚合物和除了水溶性季铵盐之外的另一种碱性有机化合物转化成水性介质。磨粒在至少一种水分散体中含有。

5. 发明申请

US20050250423A1 Method for manufacturing semiconductor device and polishing apparatus 失效
公开(公告)号：US20050250423A1
公开(公告)日：2005-11-10
申请号：US11178318
申请日：2005-07-12
申请人： Kenro Nakamura , Naoto Miyashita , Takashi Yoda , Katsuya Okumura
发明人： Kenro Nakamura , Naoto Miyashita , Takashi Yoda , Katsuya Okumura
IPC分类号： B24B9/00 , B24B9/06 , B24B21/00 , B24B21/06 , H01L21/304 , H01L21/321 , B24B1/00
CPC分类号： H01L21/304 , B24B9/065 , B24B21/002 , B24B21/06 , H01L21/321 , Y10S134/902
摘要： In manufacturing a semiconductor device, a part of an element is formed on the surface of a substrate, and at least a periphery of the substrate is polished using a polishing member stretched around the periphery of the substrate so that a polishing face of the polishing member is slid on a polishing target surface of the periphery.

6. 再颁专利

USRE36328E Semiconductor manufacturing apparatus including temperature control mechanism 失效
标题翻译：半导体制造装置包括温度控制机构
公开(公告)号：USRE36328E
公开(公告)日：1999-10-05
申请号：US915608
申请日：1997-08-21
申请人： Naoto Miyashita , Koichi Takahashi , Hiroshi Kinoshita
发明人： Naoto Miyashita , Koichi Takahashi , Hiroshi Kinoshita
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/67115
摘要： A semiconductor manufacturing apparatus includes a furnace having a tubular body with inner and outer tubular members. A boat having wafers mounted thereon is positioned inside the inner tubular member. Temperature control inside the tubular body is provided by a thermocouple device located between the inner and outer tubular members. A mixture of dichlorosilane gas and ammonium gas formed by a mixing nozzle at a temperature which is lower than the temperature in the tubular body is supplied to the wafers from positions juxtaposed with the wafers mounted on the boat.
摘要翻译：半导体制造装置包括具有带有内管状构件和外管状构件的管状体的炉。具有安装在其上的晶片的船定位在内管状构件的内部。管状体内的温度控制由位于内管状构件和外管状构件之间的热电偶装置提供。在低于管状体温度的混合喷嘴形成的二氯硅烷气体和铵气体的混合物从与安装在船上的晶片并置的位置供应到晶片。

7. 发明授权

US5589421A Method of manufacturing annealed films 失效
标题翻译：制造退火膜的方法
公开(公告)号：US5589421A
公开(公告)日：1996-12-31
申请号：US300067
申请日：1994-09-01
申请人： Naoto Miyashita , Koichi Takahashi , Mitsutoshi Koyama , Shinji Nunotani , Satoshi Yanagiya , Yoshiro Baba
发明人： Naoto Miyashita , Koichi Takahashi , Mitsutoshi Koyama , Shinji Nunotani , Satoshi Yanagiya , Yoshiro Baba
IPC分类号： H01L21/205 , C23C16/44 , C23C16/46 , C23C16/54 , C30B25/10 , H01L21/00 , H01L21/22 , H01L21/31 , H01L21/331 , H01L29/73 , H01L21/302 , H01L21/463
CPC分类号： H01L21/67115 , C23C16/44 , C23C16/54 , C30B25/10 , Y10S438/906
摘要： A chemical vapor deposition apparatus comprises a reaction chamber for annealing a silicon wafer, a transportation mechanism for transporting the silicon wafer to the reaction chamber, a detecting device for detecting temperature of the reaction chamber, and an operation control device for receiving signals corresponding to the temperature of the reaction chamber, and supplying to the transportation mechanism, other signals for preventing the silicon wafer from being transported when the temperature is 100.degree. C. or more.
摘要翻译：化学气相沉积装置包括用于退火硅晶片的反应室，用于将硅晶片输送到反应室的输送机构，用于检测反应室温度的检测装置，以及用于接收对应于该反应室的信号的操作控制装置反应室的温度，并向输送机构供给在温度为100℃以上时防止硅晶片输送的其他信号。

8. 发明授权

US5332683A Method of manufacturing semiconductor device having elements isolated by trench 失效
标题翻译：制造具有由沟槽隔离的元件的半导体器件的方法
公开(公告)号：US5332683A
公开(公告)日：1994-07-26
申请号：US15672
申请日：1993-02-09
申请人： Naoto Miyashita , Koichi Takahashi , Hironori Sonobe
发明人： Naoto Miyashita , Koichi Takahashi , Hironori Sonobe
IPC分类号： H01L21/32 , H01L21/763 , H01L21/265 , H01L29/70
CPC分类号： H01L21/32 , H01L21/763
摘要： This invention relates to a method of manufacturing a semiconductor device having elements isolated by a trench. A trench is formed to surround an element region of a silicon substrate by anisotropic etching. A nonoxide film such as a silicon nitride film is selectively formed on the upper surface of the element region. Thermal oxidation is performed using the nonoxide film as a mask to form an oxide film on the inner face of the trench and the upper surface of a field region. Thereafter, a polysilicon layer is buried in the trench, and after the surface of the polysilicon layer is flattened, a capping oxide film is formed on the upper surface of the trench. In addition, a non-oxide film is formed to have an interval between the end of the nonoxide film and the trench of 2 .mu.m or more.
摘要翻译：本发明涉及一种制造半导体器件的方法，该半导体器件具有通过沟槽隔离的元件。通过各向异性蚀刻形成沟槽以包围硅衬底的元件区域。在元件区域的上表面上选择性地形成诸如氮化硅膜的非氧化物膜。使用非氧化物膜作为掩模进行热氧化，以在沟槽的内表面和场区的上表面上形成氧化膜。此后，多晶硅层被埋在沟槽中，并且在多晶硅层的表面变平时，在沟槽的上表面上形成覆盖氧化物膜。此外，形成非氧化物膜，其在非氧化物膜的端部和沟槽之间具有2μm以上的间隔。

9. 发明授权

US06167583A Double side cleaning apparatus for semiconductor substrate 失效
标题翻译：半导体基板用双面清洗装置
公开(公告)号：US06167583A
公开(公告)日：2001-01-02
申请号：US09078132
申请日：1998-05-14
申请人： Naoto Miyashita , Masahiro Abe
发明人： Naoto Miyashita , Masahiro Abe
IPC分类号： B08B302
CPC分类号： H01L21/67028 , B08B1/04
摘要： A double side cleaning apparatus includes a pair of roll-like brushes and at least one cleaning brush. The roll-like brushes are driven to rotate in opposite directions, and a semiconductor wafer is arranged between them in a non-contact manner. The cleaning brush is arranged near the pair of roll-like brushes. While the semiconductor wafer is arranged between the pair of roll-like brushes and its upper and lower surfaces are being cleaned, the cleaning brush brushes the side surface of the semiconductor wafer. A cleaning agent is supplied from the pair of roll-like brushes to the semiconductor wafer to clean it. Since the upper and lower surfaces of the semiconductor wafer are cleaned in a non-contact manner, dust can be removed efficiently (within a short period of time and a small space).
摘要翻译：双面清洁装置包括一对卷状刷和至少一个清洁刷。卷状电刷被驱动以沿相反方向旋转，半导体晶片以非接触方式布置在它们之间。清洁刷布置在一对辊状刷附近。当半导体晶片布置在一对辊状电刷之间并且其上表面和下表面被清洁时，清洁刷刷刷半导体晶片的侧表面。从一对辊状刷向半导体晶片提供清洁剂以将其清洁。由于半导体晶片的上表面和下表面以非接触的方式被清洁，因此可以有效地（在短时间内和小的空间）内去除灰尘。

10. 发明授权

US6001238A Method for purifying pure water and an apparatus for the same 失效
标题翻译：纯水纯化方法及其设备
公开(公告)号：US6001238A
公开(公告)日：1999-12-14
申请号：US941045
申请日：1997-09-30
申请人： Jun Takayasu , Naoto Miyashita
发明人： Jun Takayasu , Naoto Miyashita
IPC分类号： C02F1/46 , C02F1/00 , C02F1/461 , C02F1/467 , C25B9/00 , C25B9/06 , C25B9/08 , C25B9/18 , H01L21/304
CPC分类号： C02F1/4678 , C02F1/46109 , C02F1/001 , C02F1/4618 , C02F2001/46138 , C02F2103/04 , C02F2201/46115 , C02F2201/4617 , Y10S210/90
摘要： A method of reducing the concentration of metal ions in pure water or ultrapure water and thereby obtaining pure water or ultrapure water. Such purified pure water or purified ultrapure water is used, for example, when washing semiconductor wafers, as a starting material of electrolytic ionic water, or for diluting washing water. A pair of carbon electrodes is disposed in an ultrapure water storage tank containing pure water or ultrapure water or in a purifying tank disposed in a line leading from an ultrapure water storage tank. A D.C. voltage is applied across the electrode pair. A carbon electrode material having a large specific surface area is chosen, and an electrode structure with which there is little detachment of carbon fragments is used. After the carbon electrode is molded, a carbon layer is formed on the surface of the molding by dipping the molding in an amorphous carbon bath. Because the carbon layer penetrates into the pores in the molding surface, the bonds between the carbon elements are strengthened, preventing carbon fragments from detaching. Because the electrode surfaces may be covered with filters, even if carbon fragments do detach, they are caught by the filters, preventing particles from entering the purified pure water or purified ultrapure water.
摘要翻译：一种降低纯水或超纯水中金属离子浓度，从而获得纯水或超纯水的方法。使用这种纯化的纯水或纯化的超纯水，例如，当洗涤半导体晶片，作为电解离子水的起始材料或稀释洗涤水时。一对碳电极设置在含有纯水或超纯水的超纯水储存罐中，或者设置在从超纯水储存罐引出的管线中的净化槽中。跨电极对施加直流电压。选择具有大比表面积的碳电极材料，并且使用与碳片断分离很少的电极结构。在碳电极成型之后，通过将成型体浸渍在无定形碳浴中，在模制品的表面上形成碳层。因为碳层渗透到成型表面的孔中，所以碳元素之间的键被加强，防止碳碎片脱落。由于电极表面可能被过滤器覆盖，即使碳片断裂，它们被过滤器捕获，防止颗粒进入纯化的纯水或纯化的超纯水。

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