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1. 发明专利

JP2006277212A Crime prevention buzzer for railway groper 审中-公开
标题翻译：铁路运输车辆防止爆破事故
公开(公告)号：JP2006277212A
公开(公告)日：2006-10-12
申请号：JP2005094105
申请日：2005-03-29
申请人： Takashi Yoda , 隆依田
发明人： YODA TAKASHI
IPC分类号： G08B23/00 , G08B3/00 , G10K9/12 , G10K9/13
摘要： PROBLEM TO BE SOLVED: To solve inconvenience of a conventional crime prevention buzzer, such as poorly portable shape, poorly usabile in a train and necessity of preparing sound of voices by a user.
SOLUTION: The crime prevention buzzer against a railway groper, which has portability, usability and selectable of sound of voices prepared in advance with adjustable volume, can be carried in a pocket by closing a lid and activated by opening the lid with a thumb and pushing a main switch 1. Before getting on the train, which sound of voices is used, male or female is determined beforehand, and by changing over a switch 2, volume with a switch 3 is set.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了解决传统的防止犯罪蜂鸣器的不便之处，例如便携式形状不佳，火车中的使用不良以及用户准备声音准备的必要性。
解决方案：通过关闭盖子并通过打开盖子将其活动起来，可以将具有便携性，可用性和可预先准备的可调节音量的声音的可预防性和可选择的预防犯罪蜂鸣器携带在口袋中拇指并按下主开关1.在上火车前，使用哪个声音，预先确定公或母，通过切换开关2，设置开关3的音量。版权所有（C）2007，JPO＆INPIT

2. 发明申请

US20060024952A1 Method of producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20060024952A1
公开(公告)日：2006-02-02
申请号：US11136494
申请日：2005-05-25
申请人： Hiroshi Ikenoue , Hisashi Kaneko , Masaaki Hatano , Soichi Yamashita , Takashi Yoda , Makoto Sekine
发明人： Hiroshi Ikenoue , Hisashi Kaneko , Masaaki Hatano , Soichi Yamashita , Takashi Yoda , Makoto Sekine
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76862 , H01L21/76807 , H01L21/76831 , H01L21/76846 , H01L21/76873
摘要： A method of producing a semiconductor device according to an aspect of the present invention comprises forming a seed film of Cu on a substrate; polycrystallizing the seed film formed on the substrate; and forming a plated film of Cu on the polycrystallized seed film by electrolytic plating.
摘要翻译：根据本发明的一个方面的制造半导体器件的方法包括在衬底上形成Cu的种子膜; 使形成在基板上的种子膜多晶化; 并通过电解电镀在多晶种子膜上形成Cu的镀膜。

3. 发明申请

US20050250423A1 Method for manufacturing semiconductor device and polishing apparatus 失效
公开(公告)号：US20050250423A1
公开(公告)日：2005-11-10
申请号：US11178318
申请日：2005-07-12
申请人： Kenro Nakamura , Naoto Miyashita , Takashi Yoda , Katsuya Okumura
发明人： Kenro Nakamura , Naoto Miyashita , Takashi Yoda , Katsuya Okumura
IPC分类号： B24B9/00 , B24B9/06 , B24B21/00 , B24B21/06 , H01L21/304 , H01L21/321 , B24B1/00
CPC分类号： H01L21/304 , B24B9/065 , B24B21/002 , B24B21/06 , H01L21/321 , Y10S134/902
摘要： In manufacturing a semiconductor device, a part of an element is formed on the surface of a substrate, and at least a periphery of the substrate is polished using a polishing member stretched around the periphery of the substrate so that a polishing face of the polishing member is slid on a polishing target surface of the periphery.

4. 发明授权

US5254872A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5254872A
公开(公告)日：1993-10-19
申请号：US673265
申请日：1991-03-21
申请人： Takashi Yoda , Tohru Watanabe , Katsuya Okumura
发明人： Takashi Yoda , Tohru Watanabe , Katsuya Okumura
IPC分类号： H01L23/532 , H01L23/48
CPC分类号： H01L23/53223 , H01L2924/0002
摘要： A semiconductor device having a reliable contact is disclosed. The device includes a barrier film deposited on the bottom and side wall of a contact hole opened in a insulating film at a predetermined position; a first metal film filled in the contact hole; and a second metal film of low resistance for forming an interconnection which passes above the contact hole filled in with the first metal film. An oxide film is formed by oxidation on the barrier metal film. And a method of manufacturing the semiconductor device is disclosed. The method includes the steps of: after opening a contact hole at a predetermined position in an insulating film deposited on a semiconductor substrate, forming a barrier film in the bottom and side wall of the contact hole; filling the contact hole with a first metal film while heating the semiconductor substrate at a predetermined temperature; and depositing a second metal film over the surface of the semiconductor device and patterning the second metal film to form an interconnection which passes the contact hole that has been filled in with the first metal film.
摘要翻译：公开了具有可靠接触的半导体器件。该装置包括沉积在预定位置处在绝缘膜上开口的接触孔的底部和侧壁上的阻挡膜; 填充在接触孔中的第一金属膜; 以及用于形成互连件的低电阻的第二金属膜，其通过填充有第一金属膜的接触孔以上。在阻挡金属膜上通过氧化形成氧化膜。并且公开了一种制造半导体器件的方法。该方法包括以下步骤：在沉积在半导体衬底上的绝缘膜中的预定位置打开接触孔之后，在接触孔的底壁和侧壁中形成阻挡膜; 在第一金属膜上填充接触孔，同时在预定温度下加热半导体衬底; 以及在所述半导体器件的表面上沉积第二金属膜，并且对所述第二金属膜进行构图以形成通过已经填充有所述第一金属膜的所述接触孔的互连。

5. 发明申请

US20120070676A1 ORGANOSILOXANE RESIN COMPOSITION AND LAMINATE COMPRISING THE SAME 审中-公开
标题翻译：有机硅氧烷树脂组合物和包含该组合物的层合物
公开(公告)号：US20120070676A1
公开(公告)日：2012-03-22
申请号：US13322250
申请日：2010-05-25
申请人： Ryo Niimi , Takashi Yoda , Yume Morita
发明人： Ryo Niimi , Takashi Yoda , Yume Morita
IPC分类号： B32B27/08 , C08K13/02 , C08K3/22 , C09D183/04 , B82Y30/00
CPC分类号： B32B27/28 , C08L83/04 , C08L83/14 , Y10T428/31663
摘要： An organosiloxane resin composition which greatly improves the weatherability, hot water resistance and durability against environmental variations and a high-temperature environment of a substrate, imparts excellent abrasion resistance and has high optical transparency and a laminate.The organosiloxane resin composition comprises (A) colloidal silica (component A), (B) a hydrolyzed and condensed product of an alkoxysilane (component B), (C) a hydrolyzed and condensed product of an alkoxysilane having high hydrophobic nature (component C) and (D) a metal oxide (component D).
摘要翻译：大大提高耐候性，耐热水性和耐环境变化耐久性以及基板的高温环境的有机硅氧烷树脂组合物赋予了优异的耐磨性，并且具有高的光学透明性和层压体。有机硅氧烷树脂组合物包含（A）胶态二氧化硅（A成分），（B）烷氧基硅烷（B成分）的水解缩合物，（C）疏水性高的烷氧基硅烷的水解缩合物（C成分）和（D）金属氧化物（D成分）。

6. 发明授权

US06828684B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06828684B2
公开(公告)日：2004-12-07
申请号：US10392967
申请日：2003-03-21
申请人： Hiroshi Ikegami , Rempei Nakata , Takashi Yoda , Nobuo Hayasaka , Yoshimi Hisatsune
发明人： Hiroshi Ikegami , Rempei Nakata , Takashi Yoda , Nobuo Hayasaka , Yoshimi Hisatsune
IPC分类号： H01L2348
CPC分类号： H01L23/53238 , H01L21/0217 , H01L21/02274 , H01L21/02307 , H01L21/02315 , H01L21/3122 , H01L21/76838 , H01L24/11 , H01L2224/13099 , H01L2224/45144 , H01L2224/45147 , H01L2924/00011 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04953 , H01L2924/12042 , H01L2924/19043 , H01L2924/30105 , Y10S438/959 , H01L2924/00 , H01L2924/01005 , H01L2924/01004 , H01L2924/00014
摘要： There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C—H bonds and C—C bonds, and a total amount of C atoms forming the C—H bonds and C atoms forming the C—C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.
摘要翻译：提供一种半导体器件，其包括半导体衬底和在半导体衬底之上的导电层，其中导电层包含铜，导电层的表面区域包含CH键和CC键中的至少一个，并且总量C 形成CH键的原子和在表面区域中形成CC键的C原子在表面区域中的元素的总量为30原子％以上。

7. 发明授权

US06595656B2 Cabin lamp 失效
标题翻译：客舱灯
公开(公告)号：US06595656B2
公开(公告)日：2003-07-22
申请号：US09976689
申请日：2001-10-12
申请人： Takashi Yoda
发明人： Takashi Yoda
IPC分类号： F21L400
CPC分类号： B60Q3/44 , F21K9/20 , F21V21/30 , F21W2106/00 , F21Y2115/10
摘要： A cabin lamp used in, for instance, an airplane having an LED module that is attached to a lamp housing and connected via a connector to a feeder element provided in the lamp housing. The LED module has a printed circuit board and a plurality of reflectors that are installed in a frame-shaped bezel detachably attached to a front end portion of the lamp housing. The printed circuit board is mounted with a plurality of light emitting diodes (LEDs), and the reflectors surround each of the LEDs so as to reflect the light from the LEDs substantially forward.
摘要翻译：例如，用于例如具有LED模块的飞机的舱灯，所述LED模块附接到灯壳体并且经由连接器连接到设置在灯壳体中的馈电元件。 LED模块具有印刷电路板和多个反射器，其安装在可拆卸地附接到灯壳体的前端部的框状挡板中。印刷电路板安装有多个发光二极管（LED），并且反射器围绕每个LED，以便将来自LED的光基本向前反射。

8. 发明授权

US07202168B2 Method of producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07202168B2
公开(公告)日：2007-04-10
申请号：US11136494
申请日：2005-05-25
申请人： Hiroshi Ikenoue , Hisashi Kaneko , Masaaki Hatano , Soichi Yamashita , Takashi Yoda , Makoto Sekine
发明人： Hiroshi Ikenoue , Hisashi Kaneko , Masaaki Hatano , Soichi Yamashita , Takashi Yoda , Makoto Sekine
IPC分类号： H01L21/44
CPC分类号： H01L21/76862 , H01L21/76807 , H01L21/76831 , H01L21/76846 , H01L21/76873
摘要： A method of producing a semiconductor device according to an aspect of the present invention comprises forming a seed film of Cu on a substrate; polycrystallizing the seed film formed on the substrate; and forming a plated film of Cu on the polycrystallized seed film by electrolytic plating.
摘要翻译：根据本发明的一个方面的制造半导体器件的方法包括在衬底上形成Cu的种子膜; 使形成在基板上的种子膜多晶化; 并通过电解电镀在多晶种子膜上形成Cu的镀膜。

9. 发明授权

US06938638B2 Gas circulating-processing apparatus 失效
标题翻译：气体循环处理装置
公开(公告)号：US06938638B2
公开(公告)日：2005-09-06
申请号：US10026566
申请日：2001-12-27
申请人： Hiroshi Kubota , Rempei Nakata , Naruhiko Kaji , Itsuko Sakai , Takashi Yoda
发明人： Hiroshi Kubota , Rempei Nakata , Naruhiko Kaji , Itsuko Sakai , Takashi Yoda
IPC分类号： G05D7/03 , B08B5/00 , B08B9/027 , F17D1/04 , H01L21/00
CPC分类号： G05D7/03 , Y10S438/905 , Y10S438/906 , Y10T137/0379 , Y10T137/0396 , Y10T137/0419 , Y10T137/4245 , Y10T137/4259 , Y10T137/6606 , Y10T137/85954 , Y10T137/86083 , Y10T137/86139
摘要： A gas-circulating processing apparatus which comprises a processing chamber, a gas feeding piping, a gas supply piping, a first exhaust mechanism discharging a gas from the processing chamber, a second exhaust mechanism discharging a portion of a gas discharged from the first exhaust mechanism, a back pressure adjusting mechanism interposed between the first exhaust mechanism and the second exhaust mechanism to adjust a back pressure of the first exhaust mechanism, and a gas circulating piping which is configured to combine another portion of the gas that has been discharged from the first exhaust mechanism with a processing gas supplied from the gas supply piping, wherein the gas feeding piping has a larger inner diameter than that of the gas supply, or the processing gas is introduced into the first exhaust mechanism, or a first heater is provided to heat at least part of the circulating route.
摘要翻译：一种气体循环处理装置，包括处理室，供气管道，气体供给管道，从处理室排出气体的第一排气机构，排出从第一排气机构排出的气体的一部分的第二排气机构设置在所述第一排气机构和所述第二排气机构之间的背压调节机构，以调节所述第一排气机构的背压;以及气体循环管道，其配置为将从所述第一排气机构排出的气体的另一部分排气机构，其具有从气体供给配管供给的处理气体，其中，所述气体供给配管的内径比所述气体供给更大，或者所述处理气体被引入到所述第一排气机构，或者设置第一加热器以加热至少部分循环路线。

10. 发明授权

US06933234B2 Method for manufacturing semiconductor device and polishing apparatus 失效
标题翻译：半导体器件和抛光装置的制造方法
公开(公告)号：US06933234B2
公开(公告)日：2005-08-23
申请号：US10303001
申请日：2002-11-25
申请人： Kenro Nakamura , Naoto Miyashita , Takashi Yoda , Katsuya Okumura
发明人： Kenro Nakamura , Naoto Miyashita , Takashi Yoda , Katsuya Okumura
IPC分类号： B24B9/00 , B24B9/06 , B24B21/00 , B24B21/06 , H01L21/304 , H01L21/321 , B24B1/00 , H01L21/302
CPC分类号： H01L21/304 , B24B9/065 , B24B21/002 , B24B21/06 , H01L21/321 , Y10S134/902
摘要： In manufacturing a semiconductor device, a part of an element is formed on the surface of a substrate, and at least a periphery of the substrate is polished using a polishing member stretched around the periphery of the substrate so that a polishing face of the polishing member is slid on a polishing target surface of the periphery.
摘要翻译：在半导体器件的制造中，元件的一部分形成在基板的表面上，并且使用在基板周围进行拉伸的研磨部件来研磨基板的至少周边，使得研磨部件的研磨面在周边的抛光对象表面上滑动。

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