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1. 发明授权

US06878631B2 Abrasive used for planarization of semiconductor device and method of manufacturing semiconductor device using the abrasive 失效
公开(公告)号：US06878631B2
公开(公告)日：2005-04-12
申请号：US10269996
申请日：2002-10-15
申请人： Jun Takayasu
发明人： Jun Takayasu
IPC分类号： B24B37/00 , C09K3/14 , H01L21/304 , H01L21/3105 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31053 , C09K3/1436
摘要： An abrasive for a semiconductor device comprises cerium oxide particles and coating materials. The cerium oxide particles are made principally of cerium oxide (CeO2). The coating materials cover the surface of the cerium oxide particles.

2. 发明授权

US6007696A Apparatus and method for manufacturing electrolytic ionic water and washing method using electroyltic ionic water 失效
标题翻译：电解离子水制备装置及方法及使用电解离子水的洗涤方法
公开(公告)号：US6007696A
公开(公告)日：1999-12-28
申请号：US938150
申请日：1997-09-26
申请人： Jun Takayasu , Naoto Miyashita
发明人： Jun Takayasu , Naoto Miyashita
IPC分类号： C02F1/00 , C02F1/461
CPC分类号： C02F1/4618 , C02F1/46109 , C02F1/001 , C02F2001/46138 , C02F2201/46115 , C02F2201/4618
摘要： Disclosed is an apparatus for manufacturing an electrolytic ionic water for treating a substrate, comprising an electrolytic cell including an anodic chamber and a cathodic chamber partitioned from the anodic chamber by a porous membrane, a first carbon electrode housed in the anodic chamber, a second carbon electrode housed in said cathodic chamber, apparatus for supplying an electrolyte solution prepared by dissolving a supporting electrolyte in pure water or ultra pure water into the electrolytic cell, apparatus for applying a DC voltage between the first and second carbon electrodes and so as to electrolyze the electrolyte solution, thereby to form an oxidizing ionic water in the anodic chamber and a reducing ionic water in the cathodic chamber, a first discharge port for discharging the oxidizing ionic water from within the anodic chamber, and a second discharge port for discharging the reducing ionic water from within the cathodic chamber.
摘要翻译：公开了一种用于制造用于处理衬底的电解离子水的设备，包括：电解池，包括阳极室和通过多孔膜从阳极室分隔的阴极室，容纳在阳极室中的第一碳电极，第二碳容纳在所述阴极室中的电极，用于将通过将支撑电解质溶解在纯水或超纯水中的电解质溶液供应到所述电解池中的装置，用于在所述第一和第二碳电极之间施加直流电压的装置，电解质溶液，从而在阳极室中形成氧化性离子水，并在阴极室中形成还原性离子水，用于从阳极室内排出氧化性离子水的第一排出口和用于排出还原离子的第二排出口阴极室内的水。

3. 发明申请

US20120202348A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20120202348A1
公开(公告)日：2012-08-09
申请号：US13238693
申请日：2011-09-21
申请人： Mio TOMIYAMA , Jun TAKAYASU , Katsuyasu SHIBA , Atsushi SHIGETA
发明人： Mio TOMIYAMA , Jun TAKAYASU , Katsuyasu SHIBA , Atsushi SHIGETA
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , H01L21/3081 , H01L21/76224 , H01L29/7843
摘要： A method for fabricating a semiconductor device according to an embodiment, includes forming a plurality of films above a substrate in a same chamber without transferring the substrate out of the chamber, forming a target film to be polished above the plurality of films, and polishing the target film by a chemical mechanical polishing (CMP) technique using a film on a front side among the plurality of films as a polishing stopper.
摘要翻译：根据实施例的制造半导体器件的方法包括在相同的腔室中在衬底上方形成多个膜，而不将衬底转移出室，在多个膜上形成待抛光的靶膜，并抛光通过化学机械抛光（CMP）技术，使用多个膜中的前侧的膜作为抛光停止件来实现目标膜。

4. 发明申请

US20050167760A1 Semiconductor device having high-voltage and low-voltage operation regions and method of fabricating the same 审中-公开
标题翻译：具有高电压和低电压操作区域的半导体器件及其制造方法
公开(公告)号：US20050167760A1
公开(公告)日：2005-08-04
申请号：US11010343
申请日：2004-12-14
申请人： Jun Takayasu
发明人： Jun Takayasu
IPC分类号： H01L21/8234 , H01L21/336 , H01L21/8247 , H01L27/088 , H01L27/10 , H01L27/115 , H01L29/51 , H01L29/78 , H01L29/788 , H01L29/792 , H01L31/062
CPC分类号： H01L27/11526 , H01L21/823437 , H01L21/823462 , H01L21/823481 , H01L27/11541 , H01L29/51 , H01L29/517 , H01L29/518 , H01L29/6659 , H01L29/7834
摘要： A semiconductor device includes a first region formed with a first gate insulator and operated by a first operating voltage, a second region formed with a second gate insulator made from a material having a higher dielectric constant than a material of the first insulator, the second region being operated by a second operating voltage lower than the first operating voltage, and gate electrodes including at least lowest layers which are in contact with the first and second gate insulators and are formed together with element isolation regions by a self-alignment manner respectively.
摘要翻译：半导体器件包括形成有第一栅极绝缘体并由第一工作电压操作的第一区域，第二区域形成有由具有比第一绝缘体的材料更高的介电常数的材料制成的第二栅极绝缘体，第二区域由低于第一工作电压的第二工作电压操作，以及包括与第一和第二栅极绝缘体接触的至少最低层的栅极，并且分别通过自对准方式与元件隔离区一起形成。

5. 发明授权

US6001238A Method for purifying pure water and an apparatus for the same 失效
标题翻译：纯水纯化方法及其设备
公开(公告)号：US6001238A
公开(公告)日：1999-12-14
申请号：US941045
申请日：1997-09-30
申请人： Jun Takayasu , Naoto Miyashita
发明人： Jun Takayasu , Naoto Miyashita
IPC分类号： C02F1/46 , C02F1/00 , C02F1/461 , C02F1/467 , C25B9/00 , C25B9/06 , C25B9/08 , C25B9/18 , H01L21/304
CPC分类号： C02F1/4678 , C02F1/46109 , C02F1/001 , C02F1/4618 , C02F2001/46138 , C02F2103/04 , C02F2201/46115 , C02F2201/4617 , Y10S210/90
摘要： A method of reducing the concentration of metal ions in pure water or ultrapure water and thereby obtaining pure water or ultrapure water. Such purified pure water or purified ultrapure water is used, for example, when washing semiconductor wafers, as a starting material of electrolytic ionic water, or for diluting washing water. A pair of carbon electrodes is disposed in an ultrapure water storage tank containing pure water or ultrapure water or in a purifying tank disposed in a line leading from an ultrapure water storage tank. A D.C. voltage is applied across the electrode pair. A carbon electrode material having a large specific surface area is chosen, and an electrode structure with which there is little detachment of carbon fragments is used. After the carbon electrode is molded, a carbon layer is formed on the surface of the molding by dipping the molding in an amorphous carbon bath. Because the carbon layer penetrates into the pores in the molding surface, the bonds between the carbon elements are strengthened, preventing carbon fragments from detaching. Because the electrode surfaces may be covered with filters, even if carbon fragments do detach, they are caught by the filters, preventing particles from entering the purified pure water or purified ultrapure water.
摘要翻译：一种降低纯水或超纯水中金属离子浓度，从而获得纯水或超纯水的方法。使用这种纯化的纯水或纯化的超纯水，例如，当洗涤半导体晶片，作为电解离子水的起始材料或稀释洗涤水时。一对碳电极设置在含有纯水或超纯水的超纯水储存罐中，或者设置在从超纯水储存罐引出的管线中的净化槽中。跨电极对施加直流电压。选择具有大比表面积的碳电极材料，并且使用与碳片断分离很少的电极结构。在碳电极成型之后，通过将成型体浸渍在无定形碳浴中，在模制品的表面上形成碳层。因为碳层渗透到成型表面的孔中，所以碳元素之间的键被加强，防止碳碎片脱落。由于电极表面可能被过滤器覆盖，即使碳片断裂，它们被过滤器捕获，防止颗粒进入纯化的纯水或纯化的超纯水。

6. 发明申请

US20050026441A1 Abrasive used for planarization of semiconductor device and method of manufacturing semiconductor device using the abrasive 审中-公开
标题翻译：用于半导体器件的平面化的研磨剂和使用研磨剂制造半导体器件的方法
公开(公告)号：US20050026441A1
公开(公告)日：2005-02-03
申请号：US10929376
申请日：2004-08-31
申请人： Jun Takayasu
发明人： Jun Takayasu
IPC分类号： B24B37/00 , C09K3/14 , H01L21/304 , H01L21/3105 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31053 , C09K3/1436
摘要： An abrasive for a semiconductor device comprises cerium oxide particles and coating materials. The cerium oxide particles are made principally of cerium oxide (CeO2). The coating materials cover the surface of the cerium oxide particles.
摘要翻译：用于半导体器件的研磨剂包括氧化铈颗粒和涂层材料。氧化铈颗粒主要由氧化铈（CeO 2）制成。涂层材料覆盖氧化铈颗粒的表面。

7. 发明授权

US06723226B1 Method and apparatus for forming electrolytic water and apparatus for washing semiconductor substrate using electrolytic water-forming apparatus 失效
标题翻译：用于形成电解水的方法和装置以及使用电解水形成设备洗涤半导体衬底的装置
公开(公告)号：US06723226B1
公开(公告)日：2004-04-20
申请号：US08631226
申请日：1996-04-12
申请人： Jun Takayasu , Naoto Miyashita , Mikiko Kawaguchi
发明人： Jun Takayasu , Naoto Miyashita , Mikiko Kawaguchi
IPC分类号： C02F1461
CPC分类号： C02F1/4618 , C02F1/461 , C02F1/688 , C02F9/00 , C02F2103/02 , Y10S134/902
摘要： In forming an electrolytic water, pure water or ultra-pure water is added to at least one solid supporting electrolyte selected from the group consisting of oxalic acid, ammonium oxalate, ammonium formate, ammonium bicarbonate, and ammonium tartrate to prepare a solution saturated with the supporting electrolyte. The solution containing the supporting electrolyte is subjected to hydrolysis to obtain an anodic water and a cathodic water.
摘要翻译：在形成电解水时，将纯水或超纯水加入到选自草酸，草酸铵，甲酸铵，碳酸氢铵和酒石酸铵的至少一种固体支持电解质中，以制备饱和的溶液支持电解质。将含有支持电解质的溶液进行水解，得到阳极水和阴极水。

8. 发明授权

US06354913B1 Abrasive and method for polishing semiconductor substrate 有权
标题翻译：磨料和抛光半导体衬底的方法
公开(公告)号：US06354913B1
公开(公告)日：2002-03-12
申请号：US09214431
申请日：1999-01-06
申请人： Naoto Miyashita , Yoshihiro Minami , Kenji Doi , Jun Takayasu , Hiroyuki Kohno , Hiroshi Kato , Kazuhiko Hayashi
发明人： Naoto Miyashita , Yoshihiro Minami , Kenji Doi , Jun Takayasu , Hiroyuki Kohno , Hiroshi Kato , Kazuhiko Hayashi
IPC分类号： B24B100
CPC分类号： B24B37/24 , B24B37/0056 , B24B37/044 , B24D3/20 , B24D3/344 , C09G1/02 , H01L21/3212
摘要： A semiconductor wafer or a film formed thereon is polished by using a polishing agent comprising abrasive containing silica particles as the main component, water as a solvent, and a water-soluble cellulose, an alkali metal impurity content of the polishing agent being 5C ppm or less where the polishing agent contains C % by weight of the water-soluble cellulose, so as to flatten the semiconductor wafer without doing damage to the wafer or the film formed thereon and without bringing about a dishing problem in the polished surface.
摘要翻译：通过使用包含二氧化硅颗粒作为主要成分的研磨剂，作为溶剂的水和水溶性纤维素，研磨剂的碱金属杂质含量为5ppm或以下，研磨半导体晶片或其上形成的膜抛光剂含有C％（重量）的水溶性纤维素，以使得半导体晶片平坦化，而不会对晶片或其上形成的膜造成损害，而不会在抛光表面产生凹陷问题。

9. 发明授权

US5665464A Carbon fiber-reinforced carbon composite material and process for the preparation thereof 失效
标题翻译：碳纤维增强碳复合材料及其制备方法
公开(公告)号：US5665464A
公开(公告)日：1997-09-09
申请号：US563596
申请日：1995-11-28
申请人： Jun Takayasu , Kazuyuki Murakami , Eiki Tsushima , Takayuki Izumi
发明人： Jun Takayasu , Kazuyuki Murakami , Eiki Tsushima , Takayuki Izumi
IPC分类号： C04B35/80 , C04B35/83 , C04B35/52 , B32B3/26 , C04B35/76
CPC分类号： C04B35/83 , C04B35/806 , Y10T428/249953 , Y10T428/249956 , Y10T428/249967
摘要： A carbon fiber-reinforced carbon composite material is disclosed which includes a matrix of carbon and unidirectionally oriented carbon fibers dispersed in the matrix, wherein the content of the carbon fibers is at least 50% based on the volume of the composite material, wherein the volume of pores having a pore diameter of 10 .mu.m or more is not greater than 5% of the total pore volume of the composite material, and wherein at least 90% of the total pore volume is the volume of open pores. The composite material is obtained by impregnating carbon fibers with a dispersion having a viscosity of 5-50 cP at 25.degree. C. and containing carbonaceous powder with an average particle diameter of smaller than 0.5 .mu.m in an organic solvent solution of a thermosetting resin. After unidirectionally aligning the carbon fibers, the impregnated fibers are molded and cured and then calcined.
摘要翻译：公开了一种碳纤维增强碳复合材料，其包括分散在基质中的碳和单向取向的碳纤维的基体，其中碳纤维的含量基于复合材料的体积至少为50％，其中体积的孔径为10μm以上的孔隙不大于复合材料的总孔体积的5％，其中总孔体积的至少90％是开孔的体积。复合材料通过在25℃下用粘度为5-50cP的分散体浸渍碳纤维并在热固性树脂的有机溶剂溶液中含有平均粒径小于0.5μm的碳质粉末来获得。在将碳纤维单向排列之后，将浸渍的纤维模制和固化，然后煅烧。

10. 发明申请

US20060006142A1 Method for polishing organic film on semiconductor substrate by use of resin particles, and slurry 审中-公开
公开(公告)号：US20060006142A1
公开(公告)日：2006-01-12
申请号：US11227159
申请日：2005-09-16
申请人： Jun Takayasu , Satoshi Murakami
发明人： Jun Takayasu , Satoshi Murakami
IPC分类号： B44C1/22 , C09K13/00 , H01L21/302
CPC分类号： H01L29/66181 , C09G1/02 , H01L21/02112 , H01L21/02271 , H01L21/31058 , H01L21/312
摘要： A method for polishing an organic film, comprising polishing an exposed organic film provided on a semiconductor substrate by use of slurry containing resin particles.

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