专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07005382B2 Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing 有权
标题翻译：用于化学机械抛光的水分散体，化学机械抛光工艺，半导体器件的生产过程以及用于制备用于化学机械抛光的水分散体的材料
公开(公告)号：US07005382B2
公开(公告)日：2006-02-28
申请号：US10694890
申请日：2003-10-29
申请人： Kazuo Nishimoto , Tatsuaki Sakano , Akihiro Takemura , Masayuki Hattori , Nobuo Kawahashi , Naoto Miyashita , Atsushi Shigeta , Yoshitaka Matsui , Kazuhiko Ida
发明人： Kazuo Nishimoto , Tatsuaki Sakano , Akihiro Takemura , Masayuki Hattori , Nobuo Kawahashi , Naoto Miyashita , Atsushi Shigeta , Yoshitaka Matsui , Kazuhiko Ida
IPC分类号： B24B1/00
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/02024
摘要： Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium. The second aqueous dispersion is composed of a first aqueous dispersion material (I) obtained by mixing a water-soluble quaternary ammonium salt and an inorganic acid salt into an aqueous medium, and a second aqueous dispersion material (II) obtained by mixing a water-soluble polymer and another basic organic compound other than the water-soluble quaternary ammonium salt into an aqueous medium. Abrasive grains are contained in at least one of the aqueous dispersion materials.
摘要翻译：提供了用于化学机械抛光的水分散体，其平坦化待抛光的表面并具有高的储存稳定性，当抛光不同材料的表面时选择性优异的化学机械抛光工艺以及半导体器件的生产工艺。第一种水性分散体含有水溶性季铵盐，无机酸盐，磨粒和水性介质。第二水性分散体至少包含水溶性季铵盐，除水溶性季铵盐以外的其它碱性有机化合物，无机酸盐，水溶性聚合物，磨料颗粒和水性介质。第二水性分散体由通过将水溶性季铵盐和无机酸盐混合到水性介质中而得到的第一水分散体（I）和第二水分散体（II）水溶性聚合物和除了水溶性季铵盐之外的另一种碱性有机化合物转化成水性介质。磨粒在至少一种水分散体中含有。

2. 发明授权

US07413989B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07413989B2
公开(公告)日：2008-08-19
申请号：US10944866
申请日：2004-09-21
申请人： Atsushi Shigeta , Kazuhiko Ida , Yoshitaka Matsui
发明人： Atsushi Shigeta , Kazuhiko Ida , Yoshitaka Matsui
IPC分类号： H01L21/302
CPC分类号： H01L21/02074 , B24B37/044 , C09G1/02 , H01L21/3212 , H01L21/7684
摘要： A semiconductor wafer including an underlying layer including an insulating film having at least one recess therein and a metallic material layer formed over a top surface of the underlying layer and filling the recess, on a semiconductor substrate, is subjected to a polishing treatment while supplying a basic CMP slurry containing metal ions on the semiconductor wafer to at least partially remove the metallic material layer. Then, an organic acid which chelates the metal ions is added to the basic CMP slurry, and polishing is conducted, using the organic acid-added CMP slurry, until a surface of the insulating film is exposed.
摘要翻译：在半导体基板上包括具有至少一个凹部的绝缘膜和在下层的顶面上形成的填充凹部的金属材料层的下层的半导体晶片经受抛光处理，同时供给在半导体晶片上含有金属离子的基本CMP浆料以至少部分地去除金属材料层。然后，向碱性CMP浆料中加入螯合金属离子的有机酸，并使用添加有机酸的CMP浆料进行研磨，直至暴露出绝缘膜的表面。

3. 发明申请

US20050176253A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050176253A1
公开(公告)日：2005-08-11
申请号：US10944866
申请日：2004-09-21
申请人： Atsushi Shigeta , Kazuhiko Ida , Yoshitaka Matsui
发明人： Atsushi Shigeta , Kazuhiko Ida , Yoshitaka Matsui
IPC分类号： B24B7/00 , B24B9/00 , B24B37/00 , C09G1/00 , C09G1/02 , C09K3/14 , H01L21/00 , H01L21/02 , H01L21/304 , H01L21/306 , H01L21/3205 , H01L21/321 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/02074 , B24B37/044 , C09G1/02 , H01L21/3212 , H01L21/7684
摘要： A semiconductor wafer including an underlying layer including an insulating film having at least one recess therein and a metallic material layer formed over a top surface of the underlying layer and filling the recess, on a semiconductor substrate, is subjected to a polishing treatment while supplying a basic CMP slurry containing metal ions on the semiconductor wafer to at least partially remove the metallic material layer. Then, an organic acid which chelates the metal ions is added to the basic CMP slurry, and polishing is conducted, using the organic acid-added CMP slurry, until a surface of the insulating film is exposed.
摘要翻译：在半导体基板上包括具有至少一个凹部的绝缘膜和在下层的顶面上形成的填充凹部的金属材料层的下层的半导体晶片经受抛光处理，同时供给在半导体晶片上含有金属离子的基本CMP浆料以至少部分地去除金属材料层。然后，向碱性CMP浆料中加入螯合金属离子的有机酸，并使用添加有机酸的CMP浆料进行研磨，直至暴露出绝缘膜的表面。

4. 发明授权

US4774011A Electrolyte for aluminum electrolytic capacitor 失效
标题翻译：铝电解电容器电解液
公开(公告)号：US4774011A
公开(公告)日：1988-09-27
申请号：US50574
申请日：1987-05-18
申请人： Shoichiro Mori , Makoto Ue , Kazuhiko Ida
发明人： Shoichiro Mori , Makoto Ue , Kazuhiko Ida
IPC分类号： H01G9/02 , H01G9/022
CPC分类号： H01G9/022 , H01G11/62 , H01G9/035 , Y02E60/13
摘要： An electrolyte for use in an aluminum electrolytic capacitor is described. The electrolyte comprises a solution of a quaternary phosphonium salt as a solute dissolved in an aprotic solvent. The electrolyte can reduce internal resistance of the electrolytic capacitor and broaden the temperature range over which the electrolytic capacitor can be used.
摘要翻译：描述了用于铝电解电容器的电解质。电解质包含溶解在非质子传递溶剂中的作为溶质的季鏻盐的溶液。电解质可以降低电解电容器的内部电阻，并扩大可以使用电解电容器的温度范围。

5. 发明授权

US5135825A Method for producing ambient temperature molten salt consisting of certain pyridinium and imidazolium halides and an aluminum trihalide 失效
标题翻译：用于生产含有一些吡啶鎓和咪唑汞的环境温度盐酸盐和三氯化铝的方法
公开(公告)号：US5135825A
公开(公告)日：1992-08-04
申请号：US538652
申请日：1990-06-15
申请人： Shoichiro Mori , Kazuhiko Ida , Hitoshi Suzuki , Setsuko Takahashi , Isao Saeki
发明人： Shoichiro Mori , Kazuhiko Ida , Hitoshi Suzuki , Setsuko Takahashi , Isao Saeki
IPC分类号： C07D233/56 , C07D521/00 , C07F5/06 , C25D3/66
CPC分类号： C07D231/12 , C07D233/56 , C07D249/08 , H01M10/36
摘要： There is disclosed a method for producing an ambient temperature molten salt comprising at least one of 1,3-dialkylimidazolium halide, 1,2,3-trialkylimidazolium halide and N-alkylpyridinium halide, and an aluminum halide, which comprises suspending the above starting materials in an inert solvent having a low boiling point to carry out a complex forming reaction.

6. 发明授权

US5074973A Non-aqueous electrolytic aluminum plating bath composition 失效
标题翻译：非水性电解铝镀锌浴组合物
公开(公告)号：US5074973A
公开(公告)日：1991-12-24
申请号：US540286
申请日：1990-06-18
申请人： Setsuko Takahashi , Isao Saeki , Kikuko Tanaka , Kayoko Oku , Shoichiro Mori , Kazuhiko Ida , Katsuhiko Ohara , Fujio Matsui , Hitoshi Suzuki
发明人： Setsuko Takahashi , Isao Saeki , Kikuko Tanaka , Kayoko Oku , Shoichiro Mori , Kazuhiko Ida , Katsuhiko Ohara , Fujio Matsui , Hitoshi Suzuki
IPC分类号： C25D3/44
CPC分类号： C25D3/44
摘要： There is disclosed a non-aqueous electrolytic aluminum plating bath composition comprising an aluminum halide and a nitrogen-containing heterocyclic onium halide compound and containing an additive selected from the group consisting of an inorganic halide compound, aromatic aldehyde, ketone or carboxylic acid, an unsaturated heterocyclic compound containing more than one nitrogen atom, an unsaturated heterocyclic compound containing a sulfur atom, an aromatic hydrocarbon compound containing a sulfur atom, an aromatic hydrocarbon compound containing an amino group and an aromatic amine; and further optionally an organic polymer. The bath composition is easy in maintenance, has good covering power, and enables smooth plating with low current density.

7. 发明授权

US5041194A Aluminum electroplating method 失效
标题翻译：铝电镀方法
公开(公告)号：US5041194A
公开(公告)日：1991-08-20
申请号：US523361
申请日：1990-05-15
申请人： Shoichiro Mori , Kazuhiko Ida , Hitoshi Suzuki , Seteuko Takahashi , Isao Saeki
发明人： Shoichiro Mori , Kazuhiko Ida , Hitoshi Suzuki , Seteuko Takahashi , Isao Saeki
IPC分类号： C25D3/44 , C25D3/66
CPC分类号： C25D3/665 , C25D3/44
摘要： There is disclosed an aluminum electroplating method, which compriss using a low melting composition comprising a mixture of 20 to 80 mole % of an aluminum halide and 80 to 20 mole % of an onium halide of a nitrogen-containing compound selected from the group consisting of bicyclic quaternary amidinium halides, 1-alkylaminopyridinium halides, trialkylimidazolium halides, benzimidazolium halides, alicyclic quaternary ammonium halides and asymmetric tetraalkylammonium halides.

8. 发明授权

US4892944A Process for producing quaternary salts 失效
标题翻译：生产季盐的方法
公开(公告)号：US4892944A
公开(公告)日：1990-01-09
申请号：US192524
申请日：1988-05-11
申请人： Shoichiro Mori , Kazuhiko Ida , Makoto Ue
发明人： Shoichiro Mori , Kazuhiko Ida , Makoto Ue
IPC分类号： C07D295/023 , C07F9/54
CPC分类号： C07D295/023 , C07F9/54
摘要： A process for producing quaternary salts of high purity is disclosed, comprising reacting a tertiary amine or phosphine with a carbonic acid diester to form a corresponding quaternary carbonate and further mixing it with an acid to perform decarboxylation. The quaternary salts thus obtained are useful compounds which can be used in wide fields as various catalysts, electrolytes, additives, medicaments, etc.

9. 发明授权

US4786429A Electrolyte for aluminum electrolytic capacitor 失效
标题翻译：铝电解电容器电解液
公开(公告)号：US4786429A
公开(公告)日：1988-11-22
申请号：US061498
申请日：1987-06-15
申请人： Shoichiro Mori , Makoto Ue , Kazuhiko Ida
发明人： Shoichiro Mori , Makoto Ue , Kazuhiko Ida
IPC分类号： H01G9/02 , H01G9/022
CPC分类号： H01G9/022
摘要： An electrolyte for aluminum electrolytic capacitor is described, comprising a solution of, as a solute, a quaternary ammonium salt having as an anion component the conjugated base of an inorganic acid compound selected from the group consisting of(1) boric acid,(2) phosphoric acid,(3) phosphorous acid and phosphorous acid monoesters, and phosphonic acids, and phosphonic acid monoesters,(4) hypophosphorous acid and phosphinic acids,(5) alkylboric acids and arylboric acids,(6) silicic acid, and(7) carbonic acid and carbonic acid monoesters, dissolved in an aprotic solvent mainly composed of .gamma.-butyrolactone.This electrolyte can reduce the internal resistance of the electrolytic cpacitor and broaden the temperature range over which the electrolytic capacitor can be used.
摘要翻译：描述了一种用于铝电解电容器的电解质，其包含作为溶质的作为阴离子成分的季铵盐，所述季铵盐是选自（1）硼酸，（2）硼酸的无机酸化合物的共轭碱，磷酸，（3）亚磷酸和亚磷酸单酯，膦酸和膦酸单酯，（4）次磷酸和次膦酸，（5）烷基硼酸和芳基硼酸，（6）硅酸，（7）碳酸和碳酸单酯溶解在主要由γ-丁内酯组成的非质子溶剂中。该电解质可以降低电解电容器的内部电阻，并扩大可以使用电解电容器的温度范围。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式