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1. 发明授权

US07154125B2 Nitride-based semiconductor light-emitting device and manufacturing method thereof 有权
公开(公告)号：US07154125B2
公开(公告)日：2006-12-26
申请号：US10422404
申请日：2003-04-23
申请人： Norikatsu Koide , Toshio Hata , Mayuko Fudeta , Daigaku Kimura
发明人： Norikatsu Koide , Toshio Hata , Mayuko Fudeta , Daigaku Kimura
IPC分类号： H01L29/22 , H01L33/00
CPC分类号： H01L33/22 , H01L33/38 , H01L33/42
摘要： The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.

2. 发明授权

US07939349B2 Nitride-based semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US07939349B2
公开(公告)日：2011-05-10
申请号：US11494845
申请日：2006-07-27
申请人： Norikatsu Koide , Toshio Hata , Mayuko Fudeta , Daigaku Kimura
发明人： Norikatsu Koide , Toshio Hata , Mayuko Fudeta , Daigaku Kimura
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/38 , H01L33/42
摘要： The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.
摘要翻译：公开了氮化物系半导体发光元件及其制造方法：氮化物系半导体发光元件具备形成在支撑基板上的反射层，p型氮化物系半导体层，发光层以及依次形成在所述反射层上的n型氮化物系半导体层，其中在位于所述n型氮化物基半导体层上方的光提取面上形成凹凸。

3. 发明申请

US20060267033A1 Nitride-based semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US20060267033A1
公开(公告)日：2006-11-30
申请号：US11494845
申请日：2006-07-27
申请人： Norikatsu Koide , Toshio Hata , Mayuko Fudeta , Daigaku Kimura
发明人： Norikatsu Koide , Toshio Hata , Mayuko Fudeta , Daigaku Kimura
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/38 , H01L33/42
摘要： The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.
摘要翻译：公开了氮化物系半导体发光元件及其制造方法：氮化物系半导体发光元件具备形成在支撑基板上的反射层，p型氮化物系半导体层，发光层以及依次形成在所述反射层上的n型氮化物系半导体层，其中在位于所述n型氮化物基半导体层上方的光提取面上形成凹凸。

4. 发明授权

US06835966B2 Method for manufacturing gallium nitride compound semiconductor 失效
公开(公告)号：US06835966B2
公开(公告)日：2004-12-28
申请号：US10391649
申请日：2003-03-20
申请人： Norikatsu Koide
发明人： Norikatsu Koide
IPC分类号： H01L3300
CPC分类号： H01L21/0254 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： An Al0.15Ga0.85N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2. At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the Al0.15Ga0.85N layer 2. Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate 1 is exposed).

5. 发明授权

US06822270B2 Semiconductor light emitting device having gallium nitride based compound semiconductor layer 有权
标题翻译：具有氮化镓基化合物半导体层的半导体发光器件
公开(公告)号：US06822270B2
公开(公告)日：2004-11-23
申请号：US10360143
申请日：2003-02-07
申请人： Norikatsu Koide , Akio Aioi , Takeshi Nishino
发明人： Norikatsu Koide , Akio Aioi , Takeshi Nishino
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/12
摘要： The semiconductor light emitting device has a gallium nitride base compound semiconductor layer expressed by a general formula of InxGayAlzN (x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1). A second intermediate layer is provided between a GaN layer and a light emitting layer, and the second intermediate layer has a lattice constant closer to that of the light emitting layer than that of the GaN layer. As such, when a substrate such as Si substrate having a smaller coefficient of thermal expansion than the nitride semiconductor film is employed, occurrence of cracks is prevented and good crystallinity of the nitride semiconductor film is assured, and accordingly, a long-life and high-luminance nitride base semiconductor light emitting device is obtained.
摘要翻译：半导体发光器件具有由通式InxGayAlzN（x + y + z =1,0.0≤x≤1,0<= y <=1,0,0≤z≤1）表示的氮化镓基化合物半导体层， = 1）。第二中间层设置在GaN层和发光层之间，第二中间层的晶格常数比GaN层的晶格常数更接近于发光层的晶格常数。因此，当采用具有比氮化物半导体膜更小的热膨胀系数的诸如Si衬底的衬底时，可以防止发生裂纹，并且确保氮化物半导体膜的良好的结晶度，因此，长寿命和高获得了高亮度氮化物基底半导体发光器件。

6. 发明授权

US06703253B2 Method for producing semiconductor light emitting device and semiconductor light emitting device produced by such method 有权
标题翻译：通过这种方法制造半导体发光器件和半导体发光器件的方法
公开(公告)号：US06703253B2
公开(公告)日：2004-03-09
申请号：US10286055
申请日：2002-11-01
申请人： Norikatsu Koide
发明人： Norikatsu Koide
IPC分类号： H01L2100
CPC分类号： H01L33/08
摘要： A method for producing a semiconductor light emitting device, including at least one first column-like multi-layer structure provided on a substrate and containing nitride-based semiconductor compound semiconductor layers represented by the general formula InxGay AlzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1), includes a first step of forming a plurality of grooves in the substrate; and a second step of forming a plurality of first column-like multi-layer structures on the substrate so as to be separated by the grooves.
摘要翻译：一种半导体发光器件的制造方法，其包括设置在基板上的至少一个第一柱状多层结构，并且包含由通式InxGay AlzN（其中x + y + z = 1，0 <= x <= 1，0 <= y <= 1,0 <= z <= 1）包括在基板中形成多个凹槽的第一步骤; 以及在所述基板上形成多个第一列状多层结构以便被所述槽分隔的第二步骤。

7. 发明授权

US06580098B1 Method for manufacturing gallium nitride compound semiconductor 失效
公开(公告)号：US06580098B1
公开(公告)日：2003-06-17
申请号：US09633854
申请日：2000-08-07
申请人： Norikatsu Koide
发明人： Norikatsu Koide
IPC分类号： H01L3300
CPC分类号： H01L21/0254 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： An Al0.15Ga0.85N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2. At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the Al0.15Ga0.85N layer 2. Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate 1 is exposed).

8. 发明授权

US5587593A Light-emitting semiconductor device using group III nitrogen compound 失效
标题翻译：使用III族氮化合物的发光半导体器件
公开(公告)号：US5587593A
公开(公告)日：1996-12-24
申请号：US423938
申请日：1995-04-19
申请人： Norikatsu Koide , Shiro Yamazaki , Junichi Umezaki , Shinya Asami
发明人： Norikatsu Koide , Shiro Yamazaki , Junichi Umezaki , Shinya Asami
IPC分类号： H01L33/12 , H01L33/16 , H01L33/32 , H01L33/00
CPC分类号： H01L33/325 , H01L33/16
摘要： A light-emitting semiconductor device includes a sapphire substrate whose main surface orientation is tilted by 1 to 4 degrees from its axis "a" , and layers epitaxially formed thereon. Tilting the surface orientation of the sapphire substrate enables uniform doping of a p-type impurity into the layers epitaxially grown thereon. As a result, the luminous intensity of the light-emitting semiconductor device is improved.
摘要翻译：发光半导体器件包括其主表面取向从其轴线“a”<11 + E，ov2 + EE0>倾斜1至4度的蓝宝石衬底，以及外延形成于其上的层。倾斜蓝宝石衬底的表面取向使得能够均匀地将p型杂质掺杂到其外延生长的层中。结果，提高了发光半导体器件的发光强度。

9. 发明申请

US20070099320A1 Method for manufacturing gallium nitride compound semiconductor 失效
标题翻译：氮化镓化合物半导体的制造方法
公开(公告)号：US20070099320A1
公开(公告)日：2007-05-03
申请号：US11640961
申请日：2006-12-19
申请人： Norikatsu Koide
发明人： Norikatsu Koide
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L33/007
摘要： An Al0.15Ga0.85N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2. At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the Al0.15Ga0.85N layer 2. Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate 1 is exposed).
摘要翻译：在硅衬底1上以条纹或栅格图案形成Al 0.15 N Ga 0.85 N层2。在衬底1暴露的区域A和限定在层2上方的区域B中形成GaN层3。此时，GaN层在Al 0.15 N 0.85 N N 2层2上外延生长三维（不仅在垂直方向，而且在横向方向上）。由于GaN层在横向上外延生长，所以在横向生长区域（基板1露出的区域A）中获得具有大大减少的位错数量的GaN化合物半导体。

10. 发明授权

US06984536B2 Method for manufacturing a gallium nitride group compound semiconductor 失效
标题翻译：氮化镓基化合物半导体的制造方法
公开(公告)号：US06984536B2
公开(公告)日：2006-01-10
申请号：US10052347
申请日：2002-01-23
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L21/20
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
摘要翻译：本文公开了（1）使用氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，其中n层n 型氮化镓化合物半导体（Al x Ga 1-x N）是包括低载流子浓度的n层和n < 高载流子浓度的+层，前者与绝缘氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻， ; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，包括相对较低的含有p型杂质的低杂质浓度的i L层低浓度和高浓度的含有p型杂质的高杂质浓度的i H +层，前者与n层相邻; （3）具有上述两个特征的发光半导体器件和（4）制造n型氮化镓系化合物半导体层的方法（Al x Ga Ga 1-x N），通过气相外延从有机金属化合物具有受控的导电性，通过以可控混合比将含硅气体和其它原料气体一起供给到一起。

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