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1. 发明申请

US20080179608A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20080179608A1
公开(公告)日：2008-07-31
申请号：US12022066
申请日：2008-01-29
申请人： Atsushi Ogawa , Akio Aioi , Satoshi Komada , Hiroshi Nakatsu
发明人： Atsushi Ogawa , Akio Aioi , Satoshi Komada , Hiroshi Nakatsu
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/14 , H01L33/32
摘要： A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.
摘要翻译：氮化物半导体发光器件包括基板和第一n型氮化物半导体层，发射层，p型氮化物半导体层，金属层和第二n型氮化物半导体层，具有设置在第二n型氮化物半导体层的表面上或者在第二n型氮化物半导体层的表面上方的电极。金属层优选由储氢合金制成。

2. 发明授权

US07893446B2 Nitride semiconductor light-emitting device providing efficient light extraction 有权
标题翻译：氮化物半导体发光器件提供高效的光提取
公开(公告)号：US07893446B2
公开(公告)日：2011-02-22
申请号：US12022066
申请日：2008-01-29
申请人： Atsushi Ogawa , Akio Aioi , Satoshi Komada , Hiroshi Nakatsu
发明人： Atsushi Ogawa , Akio Aioi , Satoshi Komada , Hiroshi Nakatsu
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/14 , H01L33/32
摘要： A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.
摘要翻译：氮化物半导体发光器件包括基板和第一n型氮化物半导体层，发射层，p型氮化物半导体层，金属层和第二n型氮化物半导体层，具有设置在第二n型氮化物半导体层的表面上或者在第二n型氮化物半导体层的表面上方的电极。金属层优选由储氢合金制成。

3. 发明授权

US06822270B2 Semiconductor light emitting device having gallium nitride based compound semiconductor layer 有权
标题翻译：具有氮化镓基化合物半导体层的半导体发光器件
公开(公告)号：US06822270B2
公开(公告)日：2004-11-23
申请号：US10360143
申请日：2003-02-07
申请人： Norikatsu Koide , Akio Aioi , Takeshi Nishino
发明人： Norikatsu Koide , Akio Aioi , Takeshi Nishino
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/12
摘要： The semiconductor light emitting device has a gallium nitride base compound semiconductor layer expressed by a general formula of InxGayAlzN (x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1). A second intermediate layer is provided between a GaN layer and a light emitting layer, and the second intermediate layer has a lattice constant closer to that of the light emitting layer than that of the GaN layer. As such, when a substrate such as Si substrate having a smaller coefficient of thermal expansion than the nitride semiconductor film is employed, occurrence of cracks is prevented and good crystallinity of the nitride semiconductor film is assured, and accordingly, a long-life and high-luminance nitride base semiconductor light emitting device is obtained.
摘要翻译：半导体发光器件具有由通式InxGayAlzN（x + y + z =1,0.0≤x≤1,0<= y <=1,0,0≤z≤1）表示的氮化镓基化合物半导体层， = 1）。第二中间层设置在GaN层和发光层之间，第二中间层的晶格常数比GaN层的晶格常数更接近于发光层的晶格常数。因此，当采用具有比氮化物半导体膜更小的热膨胀系数的诸如Si衬底的衬底时，可以防止发生裂纹，并且确保氮化物半导体膜的良好的结晶度，因此，长寿命和高获得了高亮度氮化物基底半导体发光器件。

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