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1. 发明授权

US07682956B2 Three-dimensional metal microfabrication process and devices produced thereby 有权
标题翻译：三维金属微细加工工艺及其制造的装置
公开(公告)号：US07682956B2
公开(公告)日：2010-03-23
申请号：US11445067
申请日：2006-06-01
申请人： Masaru P. Rao , Marco F. Aimi , Noel C. MacDonald
发明人： Masaru P. Rao , Marco F. Aimi , Noel C. MacDonald
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： C23F4/00 , B81B2201/042 , B81B2203/033 , B81C1/00126 , B81C2201/0132 , Y10T29/49117
摘要： The present invention relates, in general, to a method for three-dimensional (3D) microfabrication of complex, high aspect ratio structures with arbitrary surface height profiles in metallic materials, and to devices fabricated in accordance with this process. The method builds upon anisotropic deep etching methods for metallic materials previously developed by the inventors by enabling simplified realization of complex, non-prismatic structural geometries composed of multiple height levels and sloping and/or non-planar surface profiles. The utility of this approach is demonstrated in the fabrication of a sloping electrode structure intended for application in bulk micromachined titanium micromirror devices, however such a method could find use in the fabrication of any number of other microactuator, microsensor, microtransducer, or microstructure devices as well.
摘要翻译：本发明一般涉及用于金属材料中具有任意表面高度分布的复合高纵横比结构的三维（3D）微细加工方法，以及根据该方法制造的器件。该方法基于由本发明人先前开发的金属材料的各向异性深蚀刻方法，其通过使得能够简化实现由多个高度级别和倾斜和/或非平面表面轮廓组成的复杂的非棱柱结构几何形状。在制造用于体积微加工的钛微镜器件中的倾斜电极结构的过程中证明了这种方法的实用性，然而这种方法可用于制造任何数量的其它微型致动器，微传感器，微传感器或微结构器件，如好。

2. 发明授权

US07022617B2 Small scale wires with microelectromechanical devices 有权
标题翻译：小型电线与微机电装置
公开(公告)号：US07022617B2
公开(公告)日：2006-04-04
申请号：US10606812
申请日：2003-06-26
申请人： Kanakasabapathi Subramanian , Noel C. MacDonald
发明人： Kanakasabapathi Subramanian , Noel C. MacDonald
IPC分类号： H01L21/461
CPC分类号： B81C1/00142 , B81B2203/0361 , B81C1/00071 , B81C1/00111 , B81C2201/0112 , Y10S977/70 , Y10S977/762
摘要： A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.
摘要翻译：蚀刻和钝化化学物质之间的过程循环，以产生转变成小结构的粗糙侧壁。在一个实施例中，使用掩模来限定单晶硅晶片中的线。该过程在对应于循环的线的侧壁上产生波纹。在一个实施例中，线被氧化以形成对应于每个纹波的硅线。在另一个实施方案中去除氧化物以形成从微尖端到光线阵列的结构。通过氧化相邻的波纹侧壁形成流体通道。同样的掩模也用于形成MEMS器件的其他结构。

3. 发明授权

US06462391B1 Suspended moving channels and channel actuators for microfluidic applications and method for making 失效
标题翻译：用于微流控应用的悬挂移动通道和通道执行器和制造方法
公开(公告)号：US06462391B1
公开(公告)日：2002-10-08
申请号：US09686885
申请日：2000-10-12
申请人： John M. Chong , Noel C. MacDonald
发明人： John M. Chong , Noel C. MacDonald
IPC分类号： H01L2982
CPC分类号： B81C1/00587 , B81B2201/051 , Y10S366/03
摘要： A microfabrication process for making enclosed, subsurface microfluidic tunnels, cavities, channels, and the like within suspended beams includes etching a single crystal silicon wafer to produce trenches defining a beam. The trench walls are oxidized, and the interior of the beam is etched through a channel via on the top of the beam to form a hollow beam with oxide sidewalls. The beam is released, and the via is then sealed to form an enclosed released channel beam.
摘要翻译：用于在悬挂梁内制造封闭的，地下微流体通道，空腔，通道等的微加工方法包括蚀刻单晶硅晶片以产生限定光束的沟槽。沟槽壁被氧化，并且光束的内部通过在光束顶部上的通道蚀刻而形成具有氧化物侧壁的中空光束。梁被释放，然后将通孔密封以形成封闭释放的通道梁。

4. 发明授权

US06199874B1 Microelectromechanical accelerometer for automotive applications 失效
标题翻译：用于汽车应用的微机电加速度计
公开(公告)号：US06199874B1
公开(公告)日：2001-03-13
申请号：US08568845
申请日：1995-12-07
申请人： Gregory J. Galvin , Timothy J. Davis , Noel C. MacDonald
发明人： Gregory J. Galvin , Timothy J. Davis , Noel C. MacDonald
IPC分类号： B60G1700
CPC分类号： G01P15/131 , B81B2201/0235 , B81B2203/051 , B81C1/00619 , B81C2201/0132 , G01P1/006 , G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/0817
摘要： A micromechanical capacitive accelerometer is provided from a single silicon wafer. The basic structure of the micromechanical accelerometer is etched in the wafer to form a released portion in the substrate, and the released and remaining portions of the substrate are coated with metal under conditions sufficient to form a micromechanical capacitive accelerometer. The substrate is preferably etched using reactive-ion etching for at least the first etch step in the process that forms the basic structure, although in another preferred embodiment, all etching is reactive-ion etching. The accelerometer also may comprise a signal-conditioned accelerometer wherein signal-conditioning circuitry is provided on the same wafer from which the accelerometer is formed, and VLSI electronics may be integrated on the same wafer from which the accelerometer is formed. The micromechanical capacitive accelerometer can be used for airbag deployment, active suspension control, active steering control, anti-lock braking, and other control systems requiring accelerometers having high sensitivity, extreme accuracy and resistance to out of plane forces.
摘要翻译：从单个硅晶片提供微机电电容式加速度计。在晶片中蚀刻微机械加速度计的基本结构，以在衬底中形成释放部分，并且在足以形成微机械电容式加速度计的条件下，用金属涂覆衬底的释放和剩余部分。在形成基本结构的工艺中，优选使用反应离子蚀刻对至少第一蚀刻步骤蚀刻衬底，尽管在另一优选实施例中，所有蚀刻都是反应离子蚀刻。加速度计还可以包括信号调节加速度计，其中信号调节电路设置在与其形成加速度计的同一晶片上，并且VLSI电子器件可以集成在形成加速度计的相同晶片上。微机电容加速度计可用于安全气囊部署，主动悬架控制，主动转向控制，防抱死制动以及需要具有高灵敏度，极高精度和抗平面外力的加速度计的其他控制系统。

5. 发明授权

US06149190A Micromechanical accelerometer for automotive applications 失效
标题翻译：用于汽车应用的微机械加速度计
公开(公告)号：US06149190A
公开(公告)日：2000-11-21
申请号：US030641
申请日：1998-04-03
申请人： Gregory J. Galvin , Timothy J. Davis , Noel C. MacDonald
发明人： Gregory J. Galvin , Timothy J. Davis , Noel C. MacDonald
IPC分类号： B81B3/00 , B81C1/00 , B81C99/00 , G01P1/00 , G01P15/08 , G01P15/125 , G01P15/13 , B60R21/32 , G01P15/25
CPC分类号： G01P15/131 , B81C1/00619 , G01P1/006 , G01P15/0802 , G01P15/125 , B81B2201/0235 , B81B2203/051 , B81C2201/0132 , G01P2015/0814
摘要： A micromechanical capacitive accelerometer is provided from a single silicon wafer. The basic structure of the micromechanical accelerometer is etched in the wafer to form a released portion in the substrate, and the released and remaining portions of the substrate are coated with metal under conditions sufficient to form a micromechanical capacitive accelerometer. The substrate is preferably etched using reactive-ion etching for at least the first etch step in the process that forms the basic structure, although in another preferred embodiment, all etching is reactive-ion etching. The accelerometer also may comprise a signal-conditioned accelerometer wherein signal-conditioning circuitry is provided on the same wafer from which the accelerometer is formed, and VLSI electronics may be integrated on the same wafer from which the accelerometer is formed. The micromechanical capacitive accelerometer can be used for airbag deployment, active suspension control, active steering control, anti-lock braking, and other control systems requiring accelerometers having high sensitivity, extreme accuracy and resistance to out of plane forces.
摘要翻译：从单个硅晶片提供微机电电容式加速度计。在晶片中蚀刻微机械加速度计的基本结构，以在衬底中形成释放部分，并且在足以形成微机械电容式加速度计的条件下，用金属涂覆衬底的释放和剩余部分。在形成基本结构的工艺中，优选使用反应离子蚀刻对至少第一蚀刻步骤蚀刻衬底，尽管在另一优选实施例中，所有蚀刻都是反应离子蚀刻。加速度计还可以包括信号调节加速度计，其中信号调节电路设置在与其形成加速度计的同一晶片上，并且VLSI电子器件可以集成在形成加速度计的相同晶片上。微机电容加速度计可用于安全气囊部署，主动悬架控制，主动转向控制，防抱死制动以及需要具有高灵敏度，极高精度和抗平面外力的加速度计的其他控制系统。

6. 发明授权

US6051866A Microstructures and single mask, single-crystal process for fabrication thereof 有权
标题翻译：微结构和单掩模，其制造的单晶工艺
公开(公告)号：US6051866A
公开(公告)日：2000-04-18
申请号：US132254
申请日：1998-08-11
申请人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
发明人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
IPC分类号： C23F4/00 , B81B3/00 , G01P15/08 , G01P15/125 , H01L21/302 , H01L21/3065 , H01L29/82 , H01L29/84
CPC分类号： B81C1/00619 , B81C1/00142 , B81C1/0015 , B81C1/00626 , G01P15/0802 , G01P15/125 , B81C2201/0112 , B81C2201/0132 , B81C2201/053 , G01P2015/0814 , G01P2015/0817 , G01P2015/0828 , Y10S148/05 , Y10S73/01
摘要： A single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independently of crystal orientation.
摘要翻译：用于制造高纵横比的单一掩模，低温反应离子蚀刻工艺，独立于晶体取向释放单晶微机电结构。

7. 发明授权

US5856722A Microelectromechanics-based frequency signature sensor 失效
标题翻译：基于微机电的频率签名传感器
公开(公告)号：US5856722A
公开(公告)日：1999-01-05
申请号：US771681
申请日：1996-12-23
申请人： Dan Haronian , Noel C. MacDonald
发明人： Dan Haronian , Noel C. MacDonald
IPC分类号： G01H3/08 , H03H9/50 , H01L41/08
CPC分类号： G01H3/08 , H03H9/50
摘要： An acoustic filter array of microelectromechanical beams each having a characteristic resonance frequency response to mechanical and/or acoustical vibration. The array divides incoming acoustic signals into a plurality of discrete spectral components, each of which may be separately detected and converted into corresponding electrical signals. The acoustic filter may be integrated onto a single crystal silicon substrate with electrical circuity for performing acoustic signal processing functions required for applications such as speech processing and simulating the physiological function of the ear.
摘要翻译：每个具有对机械振动和/或声振动的特征共振频率响应的微机电梁的声学滤波器阵列。该阵列将输入的声信号划分成多个离散的频谱分量，每个离散频谱分量可以单独检测并转换成对应的电信号。声滤波器可以集成到具有电气电路的单晶硅衬底上，用于执行诸如语音处理和模拟耳朵的生理功能的应用所需的声信号处理功能。

8. 发明授权

US5846849A Microstructure and single mask, single-crystal process for fabrication thereof 失效
标题翻译：微结构和单掩模，其制造的单晶工艺
公开(公告)号：US5846849A
公开(公告)日：1998-12-08
申请号：US804826
申请日：1997-02-24
申请人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
发明人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
IPC分类号： C23F4/00 , B81B3/00 , G01P15/08 , G01P15/125 , H01L21/302 , H01L21/3065 , H01L29/82 , H01L29/84 , H01L21/44
CPC分类号： B81C1/00619 , B81C1/00142 , B81C1/0015 , B81C1/00626 , G01P15/0802 , G01P15/125 , B81C2201/0112 , B81C2201/0132 , B81C2201/053 , G01P2015/0814 , G01P2015/0817 , G01P2015/0828 , Y10S148/05 , Y10S73/01
摘要： A single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independently of crystal orientation.
摘要翻译：用于制造高纵横比的单一掩模，低温反应离子蚀刻工艺，独立于晶体取向释放单晶微机电结构。

9. 发明授权

US5786621A Microelectromechanical integrated microloading device 失效
标题翻译：微机电一体化微加载装置
公开(公告)号：US5786621A
公开(公告)日：1998-07-28
申请号：US670725
申请日：1996-06-21
申请人： Muhammed T. A. Saif , Noel C. MacDonald
发明人： Muhammed T. A. Saif , Noel C. MacDonald
IPC分类号： B81C99/00 , H01L29/82 , H01L23/58
CPC分类号： B81C99/004 , B81C99/005
摘要： A novel apparatus and technique or characterizing materials at submicron scale and for characterizing micromechanical devices integrates test specimens with the testing device. The test specimen is a micromechanical structure made of the material to be characterized or may be a device under evaluation. A microloading instrument is a microelectromechanical structure incorporating a stable, planar frame to which is connected a multiplicity of comb-type capacitive actuators. A variable drive voltage applied across the actuator plates selectively moves the frame structure along a longitudinal axis in a controlled fashion. The frame is mounted to a fixed substrate by means of laterally extending spring arms which position the capacitor plates and guide the motion of the frame along the longitudinal axis. The micro loading instrument is calibrated by buckling a long slender beam cofabricated with the instrument. The instrument's small size and vacuum compatibility allow material testing in macroscopic analytical devices, such as TEM to study in-situ the micro-structural changes of the test specimens. The small size of the system allow material testing in chambers with various environment conditions. The single crystal core of each beam has a high aspect ratio with the dielectric and metal layers overhanging the bottom edge of the core by an amount to balance the stresses and strains within the structure to maintain planarity of the beams and thus of the microloading instrument.
摘要翻译：一种新颖的装置和技术或亚微米尺度的特征材料，并用于表征微机械装置，将试样与试验装置相结合。试样是由要表征的材料制成的微机械结构，或者可以是被评估的装置。微加载仪器是结合有稳定的平面框架的微机电结构，其连接有多个梳状电容式致动器。施加在致动器板上的可变驱动电压以可控的方式选择性地沿着纵向轴线移动框架结构。框架通过横向延伸的弹簧臂安装到固定的基板上，定位电容器板并引导框架沿着纵向轴线的运动。微加载仪器通过弯曲与仪器共同构成的长细长梁进行校准。该仪器的小尺寸和真空兼容性允许在宏观分析装置（如TEM）中进行材料测试，原位研究试样的微观结构变化。系统的小尺寸允许在具有各种环境条件的室内进行材料测试。每个光束的单晶核心具有高的纵横比，其中电介质层和金属层悬垂在芯的底部边缘上，以平衡结构内的应力和应变，以保持光束的平坦度，从而保持微载物的平面度。

10. 发明授权

US5198390A RIE process for fabricating submicron, silicon electromechanical structures 失效
标题翻译：用于制造亚微米，硅机电结构的RIE工艺
公开(公告)号：US5198390A
公开(公告)日：1993-03-30
申请号：US821944
申请日：1992-01-16
申请人： Noel C. MacDonald , Zuoying L. Zhang
发明人： Noel C. MacDonald , Zuoying L. Zhang
IPC分类号： B81B3/00 , B81C1/00 , H01H1/00 , H01L21/3065 , H01L21/308
CPC分类号： B81C1/0015 , B81C1/00619 , H01H1/0036 , H01L21/3065 , H01L21/3081 , B81C2201/0132 , B81C2201/053 , Y10S148/05 , Y10S148/051
摘要： A reactive ion etching process is used for the fabrication of submicron, single crystal silicon, movable mechanical structures and capacitive actuators. The reactive ion etching process gives excellent control of lateral dimensions while maintaining a large vertical depth in the formation of high aspect-ratio freely suspended single crystal silicon structures. The silicon etch process is independent of crystal orientation and produces controllable vertical profiles.
摘要翻译：反应离子蚀刻工艺用于制造亚微米，单晶硅，可移动机械结构和电容式致动器。在形成高纵横比自由悬浮的单晶硅结构时，反应离子蚀刻工艺提供了横向尺寸的优异控制，同时保持了较大的垂直深度。硅蚀刻工艺独立于晶体取向并产生可控垂直分布。

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