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    • 1. 发明授权
    • Micromechanical accelerometer for automotive applications
    • 用于汽车应用的微机械加速度计
    • US06149190A
    • 2000-11-21
    • US030641
    • 1998-04-03
    • Gregory J. GalvinTimothy J. DavisNoel C. MacDonald
    • Gregory J. GalvinTimothy J. DavisNoel C. MacDonald
    • B81B3/00B81C1/00B81C99/00G01P1/00G01P15/08G01P15/125G01P15/13B60R21/32G01P15/25
    • G01P15/131B81C1/00619G01P1/006G01P15/0802G01P15/125B81B2201/0235B81B2203/051B81C2201/0132G01P2015/0814
    • A micromechanical capacitive accelerometer is provided from a single silicon wafer. The basic structure of the micromechanical accelerometer is etched in the wafer to form a released portion in the substrate, and the released and remaining portions of the substrate are coated with metal under conditions sufficient to form a micromechanical capacitive accelerometer. The substrate is preferably etched using reactive-ion etching for at least the first etch step in the process that forms the basic structure, although in another preferred embodiment, all etching is reactive-ion etching. The accelerometer also may comprise a signal-conditioned accelerometer wherein signal-conditioning circuitry is provided on the same wafer from which the accelerometer is formed, and VLSI electronics may be integrated on the same wafer from which the accelerometer is formed. The micromechanical capacitive accelerometer can be used for airbag deployment, active suspension control, active steering control, anti-lock braking, and other control systems requiring accelerometers having high sensitivity, extreme accuracy and resistance to out of plane forces.
    • 从单个硅晶片提供微机电电容式加速度计。 在晶片中蚀刻微机械加速度计的基本结构,以在衬底中形成释放部分,并且在足以形成微机械电容式加速度计的条件下,用金属涂覆衬底的释放和剩余部分。 在形成基本结构的工艺中,优选使用反应离子蚀刻对至少第一蚀刻步骤蚀刻衬底,尽管在另一优选实施例中,所有蚀刻都是反应离子蚀刻。 加速度计还可以包括信号调节加速度计,其中信号调节电路设置在与其形成加速度计的同一晶片上,并且VLSI电子器件可以集成在形成加速度计的相同晶片上。 微机电容加速度计可用于安全气囊部署,主动悬架控制,主动转向控制,防抱死制动以及需要具有高灵敏度,极高精度和抗平面外力的加速度计的其他控制系统。