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1. 发明授权

US07372582B2 Method for fabrication semiconductor device 失效
标题翻译：半导体器件制造方法
公开(公告)号：US07372582B2
公开(公告)日：2008-05-13
申请号：US10531700
申请日：2002-10-18
申请人： Nobuyuki Negishi , Kenetsu Yokogawa , Masaru Izawa
发明人： Nobuyuki Negishi , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： G01B11/14
CPC分类号： H01J37/32935 , H01J37/32091 , H01L21/31116 , H01L21/76802 , H01L22/12
摘要： The object of this invention is to provide a method for fabricating a semiconductor device in which the yield and productivity are improved. In the method for fabricating a semiconductor device according to the invention, a plasma etching system is prepared which includes a vacuum chamber 1, a susceptor 7 arranged in the vacuum chamber 1 to place a wafer 8, a gas introducing means 2 to introduce the material gas into the vacuum chamber and a high-frequency power introducing means 6. The gas introduced into the vacuum chamber by the gas introducing means 2 is converted into a plasma by the high-frequency power, and a plurality of holes are selectively formed in the oxide film 23 of a main wafer surface in a plasma atmosphere. In the hole forming step, light 15 having a continuous spectrum is irradiated on a flat portion and a hole portion of the main surface of the semiconductor wafer thereby to measure the reflectivity change in the flat portion and the hole portion.
摘要翻译：本发明的目的是提供一种制造其产率和生产率提高的半导体器件的方法。在根据本发明的半导体器件的制造方法中，制备等离子体蚀刻系统，其包括真空室1，设置在真空室1中的基座7以放置晶片8，气体引入装置2将材料气体进入真空室和高频电力引入装置6。通过气体引入装置2引入真空室的气体通过高频电力转换为等离子体，并且在等离子体气氛中的主晶片表面的氧化物膜23中选择性地形成多个孔。在孔形成步骤中，将具有连续光谱的光15照射在半导体晶片的主表面的平坦部分和孔部分上，从而测量平坦部分和孔部分中的反射率变化。

2. 发明授权

US07371690B2 Dry etching method and apparatus 失效
标题翻译：干蚀刻方法和设备
公开(公告)号：US07371690B2
公开(公告)日：2008-05-13
申请号：US10924983
申请日：2004-08-25
申请人： Nobuyuki Negishi , Masaru Izawa , Kenetsu Yokogawa
发明人： Nobuyuki Negishi , Masaru Izawa , Kenetsu Yokogawa
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/0276 , H01L21/0275 , H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： A condition without using Ar as plasma gas is applied to processing of an organic anti-reflection-coating, which suppresses a spatter effect and decreases the cleavage of C—H and OC—O bonds in a resist. As a result, roughness of the resist after processing the anti-reflection-coating can be suppressed, and pitting and striations after processing a next film to be processed, that is an insulating film, can be prevented. For a rare gas to be used at the time of processing the insulating film, any one of Xe, Kr, a mixed gas of Ar and Xe, and a mixed gas of Ar and Kr is applied in place of Ar, giving rise to reduction in pitting and striations after etching. In addition, a dry etching method with less critical-dimension shift and excellence in both apparatus cost and throughput can be provided by performing resist modification and etching by turns.
摘要翻译：将不使用Ar作为等离子气体的条件用于有机防反射涂层的加工，其抑制飞溅效应并降低抗蚀剂中C-H和OC-O键的裂解。结果，可以抑制加工抗反射涂层后的抗蚀剂的粗糙度，并且可以防止在处理下一个被加工膜（即绝缘膜）之后的点蚀和条纹。对于在加工绝缘膜时使用的稀有气体，施加Xe，Kr，Ar和Xe的混合气体以及Ar和Kr的混合气体代替Ar，导致还原蚀刻后的点蚀和条纹。此外，通过进行抗蚀剂修饰和轮匝蚀刻，可以提供具有较小临界尺寸偏移和装置成本和生产率两者优异的干蚀刻方法。

3. 发明申请

US20050048787A1 Dry etching method and apparatus 失效
标题翻译：干蚀刻方法和设备
公开(公告)号：US20050048787A1
公开(公告)日：2005-03-03
申请号：US10924983
申请日：2004-08-25
申请人： Nobuyuki Negishi , Masaru Izawa , Kenetsu Yokogawa
发明人： Nobuyuki Negishi , Masaru Izawa , Kenetsu Yokogawa
IPC分类号： G03F7/11 , G03F7/40 , H01L21/027 , H01L21/28 , H01L21/3065 , H01L21/311 , H01L21/768 , H01L21/302 , H01L21/461
CPC分类号： H01L21/0276 , H01L21/0275 , H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： A condition without using Ar as plasma gas is applied to processing of an organic anti-reflection-coating, which suppresses a spatter effect and decreases the cleavage of C—H and OC—O bonds in a resist. As a result, roughness of the resist after processing the anti-reflection-coating can be suppressed, and pitting and striations after processing a next film to be processed, that is an insulating film, can be prevented. For a rare gas to be used at the time of processing the insulating film, any one of Xe, Kr, a mixed gas of Ar and Xe, and a mixed gas of Ar and Kr is applied in place of Ar, giving rise to reduction in pitting and striations after etching. In addition, a dry etching method with less critical-dimension shift and excellence in both apparatus cost and throughput can be provided by performing resist modification and etching by turns.
摘要翻译：将不使用Ar作为等离子气体的条件用于有机防反射涂层的加工，其抑制飞溅效应并降低抗蚀剂中C-H和OC-O键的裂解。结果，可以抑制加工抗反射涂层后的抗蚀剂的粗糙度，并且可以防止在处理下一个被加工膜（即绝缘膜）之后的点蚀和条纹。对于在加工绝缘膜时使用的稀有气体，施加Xe，Kr，Ar和Xe的混合气体以及Ar和Kr的混合气体代替Ar，导致还原蚀刻后的点蚀和条纹。此外，通过进行抗蚀剂修饰和轮匝蚀刻，可以提供具有较小临界尺寸偏移和装置成本和生产率两者优异的干蚀刻方法。

4. 发明申请

US20060141795A1 Method for fabrication semiconductor device 失效
标题翻译：半导体器件制造方法
公开(公告)号：US20060141795A1
公开(公告)日：2006-06-29
申请号：US10531700
申请日：2002-10-18
申请人： Nobuyuki Negishi , Kenetsu Yokogawa , Masaru Izawa
发明人： Nobuyuki Negishi , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/461
CPC分类号： H01J37/32935 , H01J37/32091 , H01L21/31116 , H01L21/76802 , H01L22/12
摘要： The object of this invention is to provide a method for fabricating a semiconductor device in which the yield and productivity are improved. In the method for fabricating a semiconductor device according to the invention, a plasma etching system is prepared which includes a vacuum chamber 1, a susceptor 7 arranged in the vacuum chamber 1 to place a wafer 8, a gas introducing means 2 to introduce the material gas into the vacuum chamber and a high-frequency power introducing means 6. The gas introduced into the vacuum chamber by the gas introducing means 2 is converted into a plasma by the high-frequency power, and a plurality of holes are selectively formed in the oxide film 23 of a main wafer surface in a plasma atmosphere. In the hole forming step, light 15 having a continuous spectrum is irradiated on a flat portion and a hole portion of the main surface of the semiconductor wafer thereby to measure the reflectivity change in the flat portion and the hole portion.
摘要翻译：本发明的目的是提供一种制造其产率和生产率提高的半导体器件的方法。在根据本发明的半导体器件的制造方法中，制备等离子体蚀刻系统，其包括真空室1，设置在真空室1中的基座7以放置晶片8，气体引入装置2将材料气体进入真空室和高频功率引入装置6.通过气体引入装置2引入真空室的气体通过高频功率转换成等离子体，并且多个孔选择性地形成在在等离子体气氛中的主晶片表面的氧化膜23。在孔形成步骤中，将具有连续光谱的光15照射在半导体晶片的主表面的平坦部分和孔部分上，从而测量平坦部分和孔部分中的反射率变化。

5. 发明申请

US20110030899A1 PLASMA PROCESSING APPARATUS USING TRANSMISSION ELECTRODE 审中-公开
标题翻译：使用传输电极的等离子体处理设备
公开(公告)号：US20110030899A1
公开(公告)日：2011-02-10
申请号：US12709149
申请日：2010-02-19
申请人： Keizo SUZUKI , Masaru Izawa , Nobuyuki Negishi , Kenetsu Yokogawa , Kenji Maeda
发明人： Keizo SUZUKI , Masaru Izawa , Nobuyuki Negishi , Kenetsu Yokogawa , Kenji Maeda
IPC分类号： C23F1/08 , C23C16/00 , C23C16/50
CPC分类号： H01J37/3255 , H01J37/32091 , H01J37/32577
摘要： At least a part of a discharging electromagnetic wave is introduced into a processing chamber via a transmission electrode which has characteristics to behave as a dielectric (electric insulator) for the discharging electromagnetic wave, and to behave as a material with electric conductivity for RF bias electromagnetic wave of electromagnetic wave of ion plasma oscillation.
摘要翻译：放电电磁波的至少一部分经由具有作为放电电磁波的电介质（电绝缘体）的特性的透射电极被引入处理室，并且作为用于RF偏置电磁的导电性材料离子等离子体振荡的电磁波波。

6. 发明授权

US06573190B1 Dry etching device and dry etching method 失效
标题翻译：干蚀刻装置和干法蚀刻法
公开(公告)号：US06573190B1
公开(公告)日：2003-06-03
申请号：US09856264
申请日：2001-05-18
申请人： Masaru Izawa , Shinichi Tachi , Kenetsu Yokogawa , Nobuyuki Negishi , Naoyuki Kofuji
发明人： Masaru Izawa , Shinichi Tachi , Kenetsu Yokogawa , Nobuyuki Negishi , Naoyuki Kofuji
IPC分类号： H01L2100
CPC分类号： H01L21/32136 , H01J37/321 , H01J37/3266 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： A dry etching apparatus and method which can uniformly and stably generate a high-density plasma over a wide range, and can cope with increase of wafer diameter and making the pattern finer in etch processing of the fine pattern of a semiconductor device. The apparatus and method enables a magnitude of a magnetic field to be cyclically modulated when a substrate to be treated is etch processed. The cyclical modulation may be effected by cyclically modulating a coil current flowing to a solenoid coil.
摘要翻译：可以在宽范围内均匀稳定地产生高密度等离子体的干蚀刻装置和方法，并且可以应对晶片直径的增加，并使得图案在半导体器件的精细图案的蚀刻处理中更细。当要处理的衬底被蚀刻处理时，该装置和方法使得可以循环调制磁场的大小。循环调制可以通过循环调制流向螺线管线圈的线圈电流来实现。

7. 发明授权

US06475918B1 Plasma treatment apparatus and plasma treatment method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US06475918B1
公开(公告)日：2002-11-05
申请号：US09679348
申请日：2000-10-05
申请人： Masaru Izawa , Kenetsu Yokogawa , Nobuyuki Negishi , Yoshinori Momonoi , Shinichi Tachi
发明人： Masaru Izawa , Kenetsu Yokogawa , Nobuyuki Negishi , Yoshinori Momonoi , Shinichi Tachi
IPC分类号： H01L2100
CPC分类号： H01J37/32678 , H01J37/32422 , H01L21/67069 , H01L21/76802
摘要： An etching method capable of obtaining a fine fabricated shape, particularly, a vertical fabricated shape with less bowing upon fabrication of insulation films in the production of semiconductors, the method comprising controlling the incident amount of O, F or N radicals, gas flow rate or consumption amount of O, F and N on the inner wall surface with etching time to suppress excessive O, F and N which become excessive in the initial stage of etching, the method also including control for the flow rate or the consumption amount based on the result of measurement for plasmas during etching so as to obtain a stable etching shape. Since bowing can be reduced upon fabrication of insulation film hole and insulation film while maintaining the etching rate and the selectivity, finer semiconductor device can be produced easily.
摘要翻译：一种蚀刻方法，其能够在制造半导体时获得精细的制造形状，特别是制造绝缘膜时的垂直制造形状，该方法包括控制O，F或N自由基的入射量，气体流速或用蚀刻时间对内壁表面的O，F和N的消耗量进行蚀刻，以抑制在蚀刻的初始阶段过度的过量的O，F和N，该方法还包括基于流量或消耗量的控制在蚀刻期间等离子体的测量结果，以获得稳定的蚀刻形状。由于在保持蚀刻速率和选择性的同时，在制造绝缘膜孔和绝缘膜时可以减少弯曲，因此可以容易地制造更细的半导体器件。

8. 发明授权

US06842658B2 Method of manufacturing a semiconductor device and manufacturing system 失效
标题翻译：制造半导体器件和制造系统的方法
公开(公告)号：US06842658B2
公开(公告)日：2005-01-11
申请号：US09791666
申请日：2001-02-26
申请人： Masaru Izawa , Masahito Mori , Nobuyuki Negishi , Shinichi Tachi
发明人： Masaru Izawa , Masahito Mori , Nobuyuki Negishi , Shinichi Tachi
IPC分类号： H01L21/302 , G05B19/418 , H01L21/00 , H01L21/02 , H01L21/3065 , G06F19/00
CPC分类号： G05B19/41875 , G05B2219/31288 , G05B2219/32053 , G05B2219/32198 , G05B2219/45031 , H01L21/67276 , Y02P90/14 , Y02P90/18 , Y02P90/20 , Y02P90/22 , Y02P90/26 , Y02P90/86
摘要： Automatic generation of processing conditions will be provided, based on a database and process modeling by a computer equipped in semiconductor device fabrication equipment, by using input of wafer processing history including the thickness and quality. The computer equipped in semiconductor device fabrication equipment obtains the wafer processing and inspection results from a production line management computer in order to assist input of the process history. The computer in the fabrication equipment can be connected to computers in a fabrication equipment manufacturer on a communication network to automatically provide process conditions and maintenance schedule.
摘要翻译：将通过使用半导体器件制造设备中配备的计算机的数据库和过程建模，通过使用包括厚度和质量的晶片处理历史的输入来提供自动生成处理条件。配备在半导体器件制造设备中的计算机从生产线管理计算机获得晶片处理和检查结果，以帮助输入过程历史。制造设备中的计算机可以连接到通信网络上制造设备制造商中的计算机，以自动提供过程条件和维护计划。

9. 发明授权

US06645870B2 Process for fabricating semiconductor device 有权
标题翻译：半导体器件制造工艺
公开(公告)号：US06645870B2
公开(公告)日：2003-11-11
申请号：US09928500
申请日：2001-08-14
申请人： Nobuyuki Negishi , Masaru Izawa
发明人： Nobuyuki Negishi , Masaru Izawa
IPC分类号： H01L2100
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/76802 , H01L21/76897 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Disclosed is a process for fabricating a semiconductor device, which efficiently suppresses a damage layer formed on a base silicon substrate or an interconnection layer and removes a high resistivity layer in the formation of a contact hole, thereby reducing a contact resistance. The contact hole is formed in an etching step of reducing ion energy and an oxygen flow rate as an etching depth progresses, thereby suppressing the damage layer formed on the base. The reduction of the contact resistance is achieved by using a step of removing the high resistivity layer using hydrogen or a hydrogen-containing gas plasma.
摘要翻译：公开了一种半导体器件的制造方法，其有效地抑制形成在基底硅基板或互连层上的损伤层，并且在形成接触孔时去除高电阻率层，从而降低接触电阻。在蚀刻深度进行时，以减少离子能量和氧气流量的蚀刻工序形成接触孔，由此抑制形成在基材上的损伤层。通过使用氢或含氢气体等离子体去除高电阻率层的步骤来实现接触电阻的降低。

10. 发明授权

US06551445B1 Plasma processing system and method for manufacturing a semiconductor device by using the same 失效
标题翻译：等离子体处理系统及其制造方法
公开(公告)号：US06551445B1
公开(公告)日：2003-04-22
申请号：US09665045
申请日：2000-09-19
申请人： Ken'etsu Yokogawa , Yoshinori Momonoi , Nobuyuki Negishi , Masaru Izawa , Shinichi Tachi
发明人： Ken'etsu Yokogawa , Yoshinori Momonoi , Nobuyuki Negishi , Masaru Izawa , Shinichi Tachi
IPC分类号： H05H100
CPC分类号： H01J37/32623 , H01J37/32678
摘要： A parallel plate ECR plasma processing system is able to extend a plasma density region capable of keeping a continuous, uniform state. In this system, a first magnetic field-forming means formed of a solenoid coil and a second magnetic field-forming means are provided so that a the distribution of a direction of a magnetic line of flux on the surface of a planar plate is controlled by a combined magnetic field from the first and second magnetic field-forming means thereby controlling the distribution in degree of the interactions of the magnetic field and an electromagnetic wave. This control ensures the uniformity of a plasma under high density plasma formation conditions, thus enabling one to form a continuous plasma over a wide range of low to high densities. Thus, there can be realized a plasma processing system that ensures processing under wide plasma conditions including high-speed processing under high density conditions.
摘要翻译：平行板ECR等离子体处理系统能够延长能够保持连续，均匀状态的等离子体密度区域。在该系统中，设置由螺线管线圈和第二磁场形成装置形成的第一磁场形成装置，使得平面板表面上的磁通线的方向分布由来自第一和第二磁场形成装置的组合磁场由此控制磁场与电磁波的相互作用程度的分布。该控制确保在高密度等离子体形成条件下的等离子体的均匀性，从而使得能够在宽范围的低至高密度下形成连续的等离子体。因此，可以实现等离子体处理系统，其确保在宽等离子体条件下的处理，包括在高密度条件下的高速处理。

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