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1. 发明授权

US08697578B2 Film formation apparatus and method for using same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US08697578B2
公开(公告)日：2014-04-15
申请号：US12285575
申请日：2008-10-08
申请人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
IPC分类号： H01L21/311
CPC分类号： C23C16/345 , C23C16/0218 , C23C16/4405 , C23C16/452 , C23C16/45542 , H01J37/32082 , H01J37/3244 , H01J37/32522
摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate while supplying a film formation reactive gas from a first nozzle inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited inside the reaction chamber and the first nozzle, in a state where the reaction chamber does not accommodate the target substrate. The cleaning process includes, in order, an etching step of supplying a cleaning reactive gas for etching the by-product film into the reaction chamber, and activating the cleaning reactive gas, thereby etching the by-product film, and an exhaust step of stopping supply of the cleaning reactive gas and exhausting gas from inside the reaction chamber. The etching step is arranged to use conditions that cause the cleaning reactive gas supplied in the reaction chamber to flow into the first nozzle.
摘要翻译：在反应室内的第一喷嘴供给成膜反应性气体的同时，使用半导体工艺的成膜装置在目标基板上形成薄膜的方法包括进行清洗处理以除去内部沉积的副产物膜反应室和第一喷嘴，处于反应室不容纳目标基板的状态。清洗工序依次包括：将清洗反应性气体供给到反应室内的蚀刻工序，激活清洗反应性气体，蚀刻副产物膜，以及停止排出工序从反应室内供给清洗反应气体和排气。蚀刻步骤被设置为使得在反应室中供应的清洁反应气体流入第一喷嘴的条件。

2. 发明申请

US20090114156A1 Film formation apparatus for semiconductor process 审中-公开
标题翻译：用于半导体工艺的成膜装置
公开(公告)号：US20090114156A1
公开(公告)日：2009-05-07
申请号：US12285512
申请日：2008-10-07
申请人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
IPC分类号： C23C16/00
CPC分类号： C23C16/4405 , C23C16/345 , C23C16/45525 , H01L21/3185
摘要： A film formation apparatus for a semiconductor process includes a support member having a plurality of support levels configured to support target substrates inside a reaction chamber; a film formation gas supply system configured to supply a film formation gas into the reaction chamber and including a gas distribution nozzle; a cleaning gas supply system configured to supply a cleaning gas for etching a by-product film deposited inside the reaction chamber; and an exhaust system configured to exhaust gas from inside the reaction chamber. The cleaning gas supply system includes a gas nozzle disposed near a bottom of the reaction chamber and having a gas supply port at its top directed upward, and the gas supply port is located below the lowermost one of the support levels of the support member.
摘要翻译：一种用于半导体工艺的成膜装置包括：支撑构件，其具有多个支撑层，构造成支撑反应室内的目标基板; 成膜气体供给系统，其构造成将成膜气体供给到所述反应室中并且包括气体分配喷嘴; 清洁气体供给系统，被配置为提供用于蚀刻沉积在所述反应室内的副产物膜的清洁气体; 以及构造成从反应室内排出气体的排气系统。清洁气体供给系统包括设置在反应室底部附近的气体喷嘴，其顶部朝向上方具有气体供给口，气体供给口位于支撑构件的支撑水平面的最下方。

3. 发明申请

US20090124083A1 Film formation apparatus and method for using same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US20090124083A1
公开(公告)日：2009-05-14
申请号：US12285575
申请日：2008-10-08
申请人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
IPC分类号： H01L21/306
CPC分类号： C23C16/345 , C23C16/0218 , C23C16/4405 , C23C16/452 , C23C16/45542 , H01J37/32082 , H01J37/3244 , H01J37/32522
摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate while supplying a film formation reactive gas from a first nozzle inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited inside the reaction chamber and the first nozzle, in a state where the reaction chamber does not accommodate the target substrate. The cleaning process includes, in order, an etching step of supplying a cleaning reactive gas for etching the by-product film into the reaction chamber, and activating the cleaning reactive gas, thereby etching the by-product film, and an exhaust step of stopping supply of the cleaning reactive gas and exhausting gas from inside the reaction chamber. The etching step is arranged to use conditions that cause the cleaning reactive gas supplied in the reaction chamber to flow into the first nozzle.
摘要翻译：在反应室内的第一喷嘴供给成膜反应性气体的同时，使用半导体工艺的成膜装置在目标基板上形成薄膜的方法包括进行清洗处理以除去内部沉积的副产物膜反应室和第一喷嘴，处于反应室不容纳目标基板的状态。清洗工序依次包括：将清洗反应性气体供给到反应室内的蚀刻工序，激活清洗反应性气体，蚀刻副产物膜，以及停止排出工序从反应室内供给清洗反应气体和排气。蚀刻步骤被设置为使得在反应室中供应的清洁反应气体流入第一喷嘴的条件。

4. 发明授权

US08080477B2 Film formation apparatus and method for using same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US08080477B2
公开(公告)日：2011-12-20
申请号：US12285513
申请日：2008-10-07
申请人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe
IPC分类号： H01L21/461 , H01L21/331 , C23C16/452
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/4405 , C23C16/45519
摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited on a predetermined region in a gas route from a film formation gas supply system, which supplies a film formation gas contributory to film formation, through the reaction chamber to an exhaust system, by alternately repeating an etching step and an exhaust step a plurality of times in a state where the reaction chamber does not accommodate the target substrate. The etching step includes supplying a cleaning gas in an activated state for etching the by-product film onto the predetermined region, thereby etching the by-product film. The exhaust step includes stopping supply of the cleaning gas and exhausting gas by the exhaust system from a space in which the predetermined region is present.
摘要翻译：使用半导体工艺的成膜装置在反应室内的目标基板上形成薄膜的方法包括进行清洗处理以从成膜的气体路径中除去沉积在预定区域上的副产物膜气体供给系统，其通过在反应室不容纳目标的状态下交替重复蚀刻步骤和排气步骤多次，通过反应室向排气系统提供用于成膜的成膜气体基质。蚀刻步骤包括将处于活化状态的清洁气体供给到预定区域上以蚀刻副产物膜，从而蚀刻副产物膜。排气步骤包括停止由排气系统从存在预定区域的空间供应清洁气体和排出气体。

5. 发明申请

US20090124087A1 Vertical plasma processing apparatus and method for using same 审中-公开
标题翻译：垂直等离子体处理装置及其使用方法
公开(公告)号：US20090124087A1
公开(公告)日：2009-05-14
申请号：US12285885
申请日：2008-10-15
申请人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe , Hisashi Inoue
发明人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe , Hisashi Inoue
IPC分类号： H01L21/3065 , H01L21/28 , C23C16/00 , C23F1/08
CPC分类号： C23C16/509 , C23C16/345 , C23C16/452 , C23C16/45542 , C23C16/45546 , H01J37/32091 , H01J37/32174
摘要： A vertical plasma processing apparatus for a semiconductor process for performing a plasma process on target substrates all together includes an exciting mechanism configured to turn at least part of a process gas into plasma. The exciting mechanism includes first and second electrodes provided to a plasma generation box and facing each other with a plasma generation area interposed therebetween, and an RF power supply configured to supply an RF power for plasma generation to the first and second electrodes and including first and second output terminals serving as grounded and non-grounded terminals, respectively. A switching mechanism is configured to switch between a first state where the first and second electrodes are connected to the first and second output terminals, respectively, and a second state where the first and second electrodes are connected to the second and first output terminals, respectively.
摘要翻译：一种用于对目标衬底执行等离子体处理的半导体工艺的垂直等离子体处理装置一起包括一个激励机构，其构造成将至少部分工艺气体转化为等离子体。励磁机构包括提供给等离子体发生箱并且彼此面对的等离子体产生区域的第一和第二电极以及被配置为向第一和第二电极提供用于等离子体产生的RF功率的RF电源，包括第一和第二电极第二输出端分别用作接地端子和非接地端子。开关机构被配置为分别在第一和第二电极分别连接到第一和第二输出端子的第一状态和第一和第二电极分别连接到第二和第二输出端子的第二状态。

6. 发明申请

US20090117743A1 Film formation apparatus and method for using same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US20090117743A1
公开(公告)日：2009-05-07
申请号：US12285513
申请日：2008-10-07
申请人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe
IPC分类号： H01L21/461 , C23C16/452 , H01L21/311
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/4405 , C23C16/45519
摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited on a predetermined region in a gas route from a film formation gas supply system, which supplies a film formation gas contributory to film formation, through the reaction chamber to an exhaust system, by alternately repeating an etching step and an exhaust step a plurality of times in a state where the reaction chamber does not accommodate the target substrate. The etching step includes supplying a cleaning gas in an activated state for etching the by-product film onto the predetermined region, thereby etching the by-product film. The exhaust step includes stopping supply of the cleaning gas and exhausting gas by the exhaust system from a space in which the predetermined region is present.
摘要翻译：使用半导体工艺的成膜装置在反应室内的目标基板上形成薄膜的方法包括进行清洗处理以从成膜的气体路径中除去沉积在预定区域上的副产物膜气体供给系统，其通过在反应室不容纳目标的状态下交替重复蚀刻步骤和排气步骤多次，通过反应室向排气系统提供用于成膜的成膜气体基质。蚀刻步骤包括将处于活化状态的清洁气体供给到预定区域上以蚀刻副产物膜，从而蚀刻副产物膜。排气步骤包括停止由排气系统从存在预定区域的空间供应清洁气体和排出气体。

7. 发明授权

US07758920B2 Method and apparatus for forming silicon-containing insulating film 有权
标题翻译：用于形成含硅绝缘膜的方法和装置
公开(公告)号：US07758920B2
公开(公告)日：2010-07-20
申请号：US11496436
申请日：2006-08-01
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Jun Ogawa , Chaeho Kim , Kohei Fukushima , Toshiki Takahashi , Jun Sato
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Jun Ogawa , Chaeho Kim , Kohei Fukushima , Toshiki Takahashi , Jun Sato
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： C23C16/4412 , C23C16/345 , C23C16/452 , C23C16/45527 , C23C16/45546 , C23C16/45578 , H01L21/0217 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.
摘要翻译：通过CVD在目标基板上形成含硅绝缘膜，在选择性地供给吹扫气体的工艺领域中，含有硅烷族气体的第一工艺气体和含有选自下组的气体的第二工艺气体由氮化，氮氧化和氧化气体组成。该方法交替地包括第一至第四步骤。第一，第二，第三和第四步骤分别在停止供应其他两种气体的同时分别供应第一处理气体，吹扫气体，第二处理气体和吹扫气体。通过设置有开度调节阀的排气通道，在第一至第四步骤中连续抽真空排气。第一步骤中的阀的开度设定为第二和第四步骤中使用的阀门的开启度的5至95％。

8. 发明授权

US08349401B2 Film formation apparatus and method for using same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US08349401B2
公开(公告)日：2013-01-08
申请号：US12684283
申请日：2010-01-08
申请人： Jun Sato , Kiyotaka Kikuchi , Hiroki Murakami , Shigeru Nakajima , Kazuhide Hasebe
发明人： Jun Sato , Kiyotaka Kikuchi , Hiroki Murakami , Shigeru Nakajima , Kazuhide Hasebe
IPC分类号： B05D7/22 , C23C16/00
CPC分类号： C23C16/4405
摘要： A method for using a film formation apparatus includes performing a main cleaning process and a post cleaning process in this order inside a reaction chamber. The main cleaning process is arranged to supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching a film formation by-product containing silicon. The post cleaning process is arranged to remove a silicon-containing fluoride generated by the main cleaning process and remaining inside the reaction chamber and to alternately repeat, a plurality of times, supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization, and supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product.
摘要翻译：使用成膜装置的方法包括在反应室内依次进行主清洗处理和后清洗处理。主要的清洗过程是在从反应室内部排出气体的同时，向反应室内供给含有氟的清洗气体，从而蚀刻含有硅的成膜副产物。后清洗处理被设置为除去由主要清洗过程产生的含氟氟化物，并保留在反应室内，并交替重复多次，将氧化气体供应到反应室中以将含硅氟化物通过氧化进入中间产物，并且在从反应室内排出气体的同时将氟化氢气体供应到反应室中，以通过氟化氢气体和中间产物之间的反应除去中间产物。

9. 发明申请

US20070032047A1 Method and apparatus for forming silicon-containing insulating film 有权
标题翻译：用于形成含硅绝缘膜的方法和装置
公开(公告)号：US20070032047A1
公开(公告)日：2007-02-08
申请号：US11496436
申请日：2006-08-01
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Jun Ogawa , Chaeho Kim , Kohei Fukushima , Toshiki Takahashi , Jun Sato
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Jun Ogawa , Chaeho Kim , Kohei Fukushima , Toshiki Takahashi , Jun Sato
IPC分类号： C23C16/00 , G06F19/00 , H01L21/20
CPC分类号： C23C16/4412 , C23C16/345 , C23C16/452 , C23C16/45527 , C23C16/45546 , C23C16/45578 , H01L21/0217 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.
摘要翻译：通过CVD在目标基板上形成含硅绝缘膜，在选择性地供给吹扫气体的工艺领域中，含有硅烷族气体的第一工艺气体和含有选自下组的气体的第二工艺气体由氮化，氮氧化和氧化气体组成。该方法交替地包括第一至第四步骤。第一，第二，第三和第四步骤分别在停止供应其他两种气体的同时分别供应第一处理气体，吹扫气体，第二处理气体和吹扫气体。通过设置有开度调节阀的排气通道，在第一至第四步骤中连续抽真空排气。第一步骤中的阀的开度设定为第二和第四步骤中使用的阀门的开启度的5至95％。

10. 发明授权

US09869472B2 Garbage supply device 有权
公开(公告)号：US09869472B2
公开(公告)日：2018-01-16
申请号：US14000657
申请日：2011-03-11
申请人： Jun Sato , Toshimasa Shirai , Yoshihisa Saito , Norio Yoshimitsu , Yasunori Terabe
发明人： Jun Sato , Toshimasa Shirai , Yoshihisa Saito , Norio Yoshimitsu , Yasunori Terabe
IPC分类号： F23G5/00 , F23G5/44 , F23G5/50 , B65G33/18
CPC分类号： F23G5/442 , B65G33/18 , F23G5/444 , F23G5/50 , F23G2201/80 , F23G2205/10 , F23G2205/121 , F23G2207/101 , F23G2207/20 , F23G2208/00 , F23G2208/10
摘要： A garbage supply device, which supplies waste to a gasification furnace that gasifies waste, includes a casing, two feed screws provided in the casing, and a middle shaft that is provided between the two supply screws, has a plurality of protrusions, and is repeatedly rotated forward or backward.

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