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1. 发明申请

US20090124087A1 Vertical plasma processing apparatus and method for using same 审中-公开
标题翻译：垂直等离子体处理装置及其使用方法
公开(公告)号：US20090124087A1
公开(公告)日：2009-05-14
申请号：US12285885
申请日：2008-10-15
申请人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe , Hisashi Inoue
发明人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe , Hisashi Inoue
IPC分类号： H01L21/3065 , H01L21/28 , C23C16/00 , C23F1/08
CPC分类号： C23C16/509 , C23C16/345 , C23C16/452 , C23C16/45542 , C23C16/45546 , H01J37/32091 , H01J37/32174
摘要： A vertical plasma processing apparatus for a semiconductor process for performing a plasma process on target substrates all together includes an exciting mechanism configured to turn at least part of a process gas into plasma. The exciting mechanism includes first and second electrodes provided to a plasma generation box and facing each other with a plasma generation area interposed therebetween, and an RF power supply configured to supply an RF power for plasma generation to the first and second electrodes and including first and second output terminals serving as grounded and non-grounded terminals, respectively. A switching mechanism is configured to switch between a first state where the first and second electrodes are connected to the first and second output terminals, respectively, and a second state where the first and second electrodes are connected to the second and first output terminals, respectively.
摘要翻译：一种用于对目标衬底执行等离子体处理的半导体工艺的垂直等离子体处理装置一起包括一个激励机构，其构造成将至少部分工艺气体转化为等离子体。励磁机构包括提供给等离子体发生箱并且彼此面对的等离子体产生区域的第一和第二电极以及被配置为向第一和第二电极提供用于等离子体产生的RF功率的RF电源，包括第一和第二电极第二输出端分别用作接地端子和非接地端子。开关机构被配置为分别在第一和第二电极分别连接到第一和第二输出端子的第一状态和第一和第二电极分别连接到第二和第二输出端子的第二状态。

2. 发明申请

US20090117743A1 Film formation apparatus and method for using same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US20090117743A1
公开(公告)日：2009-05-07
申请号：US12285513
申请日：2008-10-07
申请人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe
IPC分类号： H01L21/461 , C23C16/452 , H01L21/311
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/4405 , C23C16/45519
摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited on a predetermined region in a gas route from a film formation gas supply system, which supplies a film formation gas contributory to film formation, through the reaction chamber to an exhaust system, by alternately repeating an etching step and an exhaust step a plurality of times in a state where the reaction chamber does not accommodate the target substrate. The etching step includes supplying a cleaning gas in an activated state for etching the by-product film onto the predetermined region, thereby etching the by-product film. The exhaust step includes stopping supply of the cleaning gas and exhausting gas by the exhaust system from a space in which the predetermined region is present.
摘要翻译：使用半导体工艺的成膜装置在反应室内的目标基板上形成薄膜的方法包括进行清洗处理以从成膜的气体路径中除去沉积在预定区域上的副产物膜气体供给系统，其通过在反应室不容纳目标的状态下交替重复蚀刻步骤和排气步骤多次，通过反应室向排气系统提供用于成膜的成膜气体基质。蚀刻步骤包括将处于活化状态的清洁气体供给到预定区域上以蚀刻副产物膜，从而蚀刻副产物膜。排气步骤包括停止由排气系统从存在预定区域的空间供应清洁气体和排出气体。

3. 发明授权

US08080477B2 Film formation apparatus and method for using same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US08080477B2
公开(公告)日：2011-12-20
申请号：US12285513
申请日：2008-10-07
申请人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe
IPC分类号： H01L21/461 , H01L21/331 , C23C16/452
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/4405 , C23C16/45519
摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited on a predetermined region in a gas route from a film formation gas supply system, which supplies a film formation gas contributory to film formation, through the reaction chamber to an exhaust system, by alternately repeating an etching step and an exhaust step a plurality of times in a state where the reaction chamber does not accommodate the target substrate. The etching step includes supplying a cleaning gas in an activated state for etching the by-product film onto the predetermined region, thereby etching the by-product film. The exhaust step includes stopping supply of the cleaning gas and exhausting gas by the exhaust system from a space in which the predetermined region is present.
摘要翻译：使用半导体工艺的成膜装置在反应室内的目标基板上形成薄膜的方法包括进行清洗处理以从成膜的气体路径中除去沉积在预定区域上的副产物膜气体供给系统，其通过在反应室不容纳目标的状态下交替重复蚀刻步骤和排气步骤多次，通过反应室向排气系统提供用于成膜的成膜气体基质。蚀刻步骤包括将处于活化状态的清洁气体供给到预定区域上以蚀刻副产物膜，从而蚀刻副产物膜。排气步骤包括停止由排气系统从存在预定区域的空间供应清洁气体和排出气体。

4. 发明申请

US20080311760A1 Film formation method and apparatus for semiconductor process 审中-公开
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20080311760A1
公开(公告)日：2008-12-18
申请号：US12155678
申请日：2008-06-06
申请人： Nobutake Nodera , Masanobu Matsunaga , Kazuhide Hasebe , Kota Umezawa , Pao-Hwa Chou
发明人： Nobutake Nodera , Masanobu Matsunaga , Kazuhide Hasebe , Kota Umezawa , Pao-Hwa Chou
IPC分类号： H01L21/31 , B05C11/10
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45527 , C23C16/45542 , C23C16/45546 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： A silicon nitride film is formed on a target substrate by performing a plurality of cycles in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas. Each of the cycles includes a first supply step of performing supply of the first process gas while maintaining a shut-off state of supply of the second process gas, and a second supply step of performing supply of the second process gas, while maintaining a shut-off state of supply of the first process gas. The method is arranged to repeat a first cycle set with the second supply step including an excitation period of exciting the second process gas and a second cycle set with the second supply step including no period of exciting the second process gas.
摘要翻译：在被配置为选择性地供给包含硅烷族气体的第一工艺气体和含有氮化气体的第二工艺气体的工艺过程中进行多个循环，在目标衬底上形成氮化硅膜。每个循环包括在保持第二处理气体的供给关闭状态的同时进行第一处理气体的供给的第一供给步骤和在保持关闭的同时进行第二处理气体的供给的第二供给步骤 - 第一工艺气体的供给状态。该方法被布置为重复第一循环集合，其中第二供给步骤包括激发第二处理气体的激发周期，以及第二循环，其中第二供给步骤不包括激发第二处理气体的周期。

5. 发明授权

US08257789B2 Film formation method in vertical batch CVD apparatus 有权
标题翻译：立式分批CVD装置中的成膜方法
公开(公告)号：US08257789B2
公开(公告)日：2012-09-04
申请号：US12564484
申请日：2009-09-22
申请人： Masanobu Matsunaga , Nobutake Nodera , Kazuhide Hasebe
发明人： Masanobu Matsunaga , Nobutake Nodera , Kazuhide Hasebe
IPC分类号： C23C16/00 , C23C16/453
CPC分类号： C23C16/345 , C23C16/455 , C23C16/45542 , C23C16/45546 , H01L21/3141 , H01L21/3185
摘要： A film formation method, in a vertical batch CVD apparatus, is preset to repeat a cycle a plurality of times to laminate thin films formed by respective times. The cycle alternately includes an adsorption step of adsorbing a source gas onto a surface of the target substrates and a reaction step of causing a reactive gas to react with the adsorbed source gas. The adsorption step is arranged to make a plurality of times a supply sub-step of performing supply of the source gas to the process field with an intermediate sub-step of stopping supply of the source gas to the process field interposed therebetween, while maintaining a shut-off state of supply of the reactive gas. The reaction step is arranged to continuously perform supply of the reactive gas to the process field, while maintaining a shut-off state of supply of the source gas.
摘要翻译：在垂直分批CVD装置中，成膜方法被预先设定为重复多次循环以层压各时间形成的薄膜。循环交替地包括将源气体吸附到目标基板的表面上的吸附步骤和使反应性气体与吸附的源气体反应的反应步骤。吸附工序被配置为进行多次供给副工序，该供给副工序用于停止将源气体供给到工艺场的中间子步骤，同时保持原料气体关闭反应气体供应状态。反应步骤被设置成在保持源气体的供应关闭状态的同时连续地向工艺场供应反应气体。

6. 发明申请

US20100136260A1 FILM FORMATION METHOD IN VERTICAL BATCH CVD APPARATUS 有权
标题翻译：垂直成型CVD装置中的成膜方法
公开(公告)号：US20100136260A1
公开(公告)日：2010-06-03
申请号：US12564484
申请日：2009-09-22
申请人： Masanobu Matsunaga , Nobutake Nodera , Kazuhide Hasebe
发明人： Masanobu Matsunaga , Nobutake Nodera , Kazuhide Hasebe
IPC分类号： C23C16/513 , C23C16/455 , B05C11/00 , C23C16/52
CPC分类号： C23C16/345 , C23C16/455 , C23C16/45542 , C23C16/45546 , H01L21/3141 , H01L21/3185
摘要： A film formation method, in a vertical batch CVD apparatus, is preset to repeat a cycle a plurality of times to laminate thin films formed by respective times. The cycle alternately includes an adsorption step of adsorbing a source gas onto a surface of the target substrates and a reaction step of causing a reactive gas to react with the adsorbed source gas. The adsorption step is arranged to make a plurality of times a supply sub-step of performing supply of the source gas to the process field with an intermediate sub-step of stopping supply of the source gas to the process field interposed therebetween, while maintaining a shut-off state of supply of the reactive gas. The reaction step is arranged to continuously perform supply of the reactive gas to the process field, while maintaining a shut-off state of supply of the source gas.
摘要翻译：在垂直分批CVD装置中，成膜方法被预先设定为重复多次循环以层压各时间形成的薄膜。循环交替地包括将源气体吸附到目标基板的表面上的吸附步骤和使反应性气体与吸附的源气体反应的反应步骤。吸附工序被配置为进行多次供给副工序，该供给副工序用于停止将源气体供给到工艺场的中间子步骤，同时保持原料气体关闭反应气体供应状态。反应步骤被设置成在保持源气体的供应关闭状态的同时连续地向工艺场供应反应气体。

7. 发明申请

US20090191722A1 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20090191722A1
公开(公告)日：2009-07-30
申请号：US12320018
申请日：2009-01-14
申请人： Kazuhide Hasebe , Nobutake Nodera , Masanobu Matsunaga , Jun Satoh , Pao-Hwa Chou
发明人： Kazuhide Hasebe , Nobutake Nodera , Masanobu Matsunaga , Jun Satoh , Pao-Hwa Chou
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45542
摘要： A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner.
摘要翻译：使用成膜方法在目标衬底上形成氮化硅膜，通过重复等离子体循环和非等离子体循环多次，在被配置为选择性地供给包含硅烷族的第一工艺气体的工艺过程中气体和含有氮化气体的第二工艺气体，并与用于激发待供应的第二工艺气体的激励机构连通。该方法包括获得表示等离子体循环与非等离子体循环的循环混合方式相对于氮化硅膜的膜质量因子的关系的关系式或关系表; 参照关系公式或关系表，基于电影品质因子的目标值确定循环混合方式的具体方式; 并根据具体方式布置成膜处理。

8. 发明授权

US08178448B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US08178448B2
公开(公告)日：2012-05-15
申请号：US12852094
申请日：2010-08-06
申请人： Nobutake Nodera , Masanobu Matsunaga , Kazuhide Hasebe , Koto Umezawa , Pao-Hwa Chou
发明人： Nobutake Nodera , Masanobu Matsunaga , Kazuhide Hasebe , Koto Umezawa , Pao-Hwa Chou
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45527 , C23C16/45542 , C23C16/45546 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： Disclosed is a method for using a film formation apparatus to form a silicon nitride film by CVD on target substrates while suppressing particle generation. The apparatus includes a process container and an exciting mechanism attached on the process container. The method includes conducting a pre-coating process by performing pre-cycles and conducting a film formation process by performing main cycles. Each of the pre-cycles and main cycles alternately includes a step of supplying a silicon source gas and a step of supplying a nitriding gas with steps of exhausting gas from inside the process container interposed therebetween. The pre-coating process includes no period of exciting the nitriding gas by the exciting mechanism. The film formation process repeats a first cycle set that excites the nitriding gas by the exciting mechanism and a second cycle that does not excite the nitriding gas by the exciting mechanism.
摘要翻译：公开了一种使用成膜装置在目标基板上通过CVD形成氮化硅膜同时抑制颗粒产生的方法。该装置包括附着在处理容器上的处理容器和激励机构。该方法包括通过执行预循环并通过执行主循环进行成膜过程进行预涂工艺。预循环和主循环中的每一个交替地包括供给硅源气体的步骤和从氮化气体供给步骤的步骤，该步骤从夹在其间的处理容器内部排出气体。预涂工艺不包括激发机构激发氮化气体的时间。成膜过程重复利用激发机构激发氮化气体的第一循环组和不由激发机构激发氮化气体的第二循环。

9. 发明授权

US08080290B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US08080290B2
公开(公告)日：2011-12-20
申请号：US12320018
申请日：2009-01-14
申请人： Kazuhide Hasebe , Nobutake Nodera , Masanobu Matsunaga , Jun Satoh , Pao-Hwa Chou
发明人： Kazuhide Hasebe , Nobutake Nodera , Masanobu Matsunaga , Jun Satoh , Pao-Hwa Chou
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45542
摘要： A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner.
摘要翻译：使用成膜方法在目标衬底上形成氮化硅膜，通过重复等离子体循环和非等离子体循环多次，在被配置为选择性地供给包含硅烷族的第一工艺气体的工艺过程中气体和含有氮化气体的第二工艺气体，并与用于激发待供应的第二工艺气体的激励机构连通。该方法包括获得表示等离子体循环与非等离子体循环的循环混合方式相对于氮化硅膜的膜质量因子的关系的关系式或关系表; 参照关系公式或关系表，基于电影品质因子的目标值确定循环混合方式的具体方式; 并根据具体方式布置成膜处理。

10. 发明申请

US20100304574A1 FILM FORMATION METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS 有权
标题翻译：薄膜形成方法和半导体工艺设备
公开(公告)号：US20100304574A1
公开(公告)日：2010-12-02
申请号：US12852094
申请日：2010-08-06
申请人： Nobutake NODERA , Masanobu Matsunaga , Kazuhide Hasebe , Koto Umezawa , Pao-Hwa Chou
发明人： Nobutake NODERA , Masanobu Matsunaga , Kazuhide Hasebe , Koto Umezawa , Pao-Hwa Chou
IPC分类号： H01L21/318
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45527 , C23C16/45542 , C23C16/45546 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： Disclosed is a method for using a film formation apparatus to form a silicon nitride film by CVD on target substrates while suppressing particle generation. The apparatus includes a process container and an exciting mechanism attached on the process container. The method includes conducting a pre-coating process by performing pre-cycles and conducting a film formation process by performing main cycles. Each of the pre-cycles and main cycles alternately includes a step of supplying a silicon source gas and a step of supplying a nitriding gas with steps of exhausting gas from inside the process container interposed therebetween. The pre-coating process includes no period of exciting the nitriding gas by the exciting mechanism. The film formation process repeats a first cycle set that excites the nitriding gas by the exciting mechanism and a second cycle that does not excite the nitriding gas by the exciting mechanism.
摘要翻译：公开了一种使用成膜装置在目标基板上通过CVD形成氮化硅膜同时抑制颗粒产生的方法。该装置包括附着在处理容器上的处理容器和激励机构。该方法包括通过执行预循环并通过执行主循环进行成膜过程进行预涂工艺。预循环和主循环中的每一个交替地包括提供硅源气体的步骤和从氮化气体供给步骤的步骤，该步骤从其间插入处理容器内部排出气体。预涂工艺不包括激发机构激发氮化气体的时间。成膜过程重复利用激发机构激发氮化气体的第一循环组和不由激发机构激发氮化气体的第二循环。

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