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1. 发明授权

US08349401B2 Film formation apparatus and method for using same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US08349401B2
公开(公告)日：2013-01-08
申请号：US12684283
申请日：2010-01-08
申请人： Jun Sato , Kiyotaka Kikuchi , Hiroki Murakami , Shigeru Nakajima , Kazuhide Hasebe
发明人： Jun Sato , Kiyotaka Kikuchi , Hiroki Murakami , Shigeru Nakajima , Kazuhide Hasebe
IPC分类号： B05D7/22 , C23C16/00
CPC分类号： C23C16/4405
摘要： A method for using a film formation apparatus includes performing a main cleaning process and a post cleaning process in this order inside a reaction chamber. The main cleaning process is arranged to supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching a film formation by-product containing silicon. The post cleaning process is arranged to remove a silicon-containing fluoride generated by the main cleaning process and remaining inside the reaction chamber and to alternately repeat, a plurality of times, supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization, and supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product.
摘要翻译：使用成膜装置的方法包括在反应室内依次进行主清洗处理和后清洗处理。主要的清洗过程是在从反应室内部排出气体的同时，向反应室内供给含有氟的清洗气体，从而蚀刻含有硅的成膜副产物。后清洗处理被设置为除去由主要清洗过程产生的含氟氟化物，并保留在反应室内，并交替重复多次，将氧化气体供应到反应室中以将含硅氟化物通过氧化进入中间产物，并且在从反应室内排出气体的同时将氟化氢气体供应到反应室中，以通过氟化氢气体和中间产物之间的反应除去中间产物。

2. 发明申请

US20100189927A1 FILM FORMATION APPARATUS AND METHOD FOR USING SAME 有权
标题翻译：胶片形成装置及其使用方法
公开(公告)号：US20100189927A1
公开(公告)日：2010-07-29
申请号：US12684283
申请日：2010-01-08
申请人： Jun SATO , Kiyotaka Kikuchi , Hiroki Murakami , Shigeru Nakajima , Kazuhide Hasebe
发明人： Jun SATO , Kiyotaka Kikuchi , Hiroki Murakami , Shigeru Nakajima , Kazuhide Hasebe
IPC分类号： C23C16/50 , C23C16/44 , C23C16/00 , C23C16/52
CPC分类号： C23C16/4405
摘要： A method for using a film formation apparatus includes performing a main cleaning process and a post cleaning process in this order inside a reaction chamber. The main cleaning process is arranged to supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching a film formation by-product containing silicon. The post cleaning process is arranged to remove a silicon-containing fluoride generated by the main cleaning process and remaining inside the reaction chamber and to alternately repeat, a plurality of times, supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization, and supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product.
摘要翻译：使用成膜装置的方法包括在反应室内依次进行主清洗处理和后清洗处理。主要的清洗过程是在从反应室内部排出气体的同时，向反应室内供给含有氟的清洗气体，从而蚀刻含有硅的成膜副产物。后清洗处理被设置为除去由主要清洗过程产生的含氟氟化物，并保留在反应室内，并交替重复多次，将氧化气体供应到反应室中以将含硅氟化物通过氧化进入中间产物，并且在从反应室内排出气体的同时将氟化氢气体供应到反应室中，以通过氟化氢气体和中间产物之间的反应除去中间产物。

3. 发明授权

US08426117B2 Mask pattern forming method, fine pattern forming method, and film deposition apparatus 有权
标题翻译：掩模图案形成方法，精细图案形成方法和成膜装置
公开(公告)号：US08426117B2
公开(公告)日：2013-04-23
申请号：US12567834
申请日：2009-09-28
申请人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa , Hiroki Murakami
发明人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa , Hiroki Murakami
IPC分类号： G03F7/26
CPC分类号： H01L21/027 , C23C16/02 , C23C16/402 , C23C16/403 , C23C16/45536 , G03F7/40 , H01L21/02164 , H01L21/02178 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/0274 , H01L21/0337 , H01L21/0338 , H01L21/31138 , H01L21/31144 , H01L21/31608 , H01L21/31616 , H01L21/32139 , H01L21/76816
摘要： In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
摘要翻译：在掩模图案形成方法中，在薄膜上形成抗蚀剂膜，通过光刻将抗蚀剂膜加工成具有预定间距的抗蚀剂图案，进行抗蚀剂图案的减薄，并且在薄膜上形成氧化膜以及通过供给源气体和氧自由基或含氧气体在成膜装置中减肥步骤结束后的抗蚀剂图案。在掩模图案形成方法中，在成膜装置中连续进行纤维化和氧化膜形成。

4. 发明授权

US08383522B2 Micro pattern forming method 有权
标题翻译：微型成型方法
公开(公告)号：US08383522B2
公开(公告)日：2013-02-26
申请号：US13154728
申请日：2011-06-07
申请人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
发明人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F7/405 , G03F7/0035 , H01L21/02164 , H01L21/0228 , H01L21/0271 , H01L21/0337 , H01L21/31144 , H01L21/32139
摘要： There is provided a micro pattern forming method including forming a thin film on a substrate; forming a film serving as a mask when processing the thin film; processing the film serving as a mask into a pattern including lines having a preset pitch; trimming the pattern including the lines; and forming an oxide film on the pattern including the lines and on the thin film by alternately supplying a source gas and an activated oxygen species. Here, the process of trimming the pattern and the process of forming an oxide film are consecutively performed in a film forming apparatus configured to form the oxide film.
摘要翻译：提供了一种微图案形成方法，包括在基板上形成薄膜; 在加工薄膜时形成用作掩模的膜; 将作为掩模的胶片处理成包括具有预设间距的线的图案; 修剪包括线条的图案; 并且通过交替地供给源气体和活性氧物质，在包括线条的图案和薄膜上形成氧化膜。这里，在构成为形成氧化膜的成膜装置中连续进行修整图案的修整和形成氧化膜的工序。

5. 发明授权

US07923378B2 Film formation method and apparatus for forming silicon-containing insulating film 有权
标题翻译：用于形成含硅绝缘膜的成膜方法和装置
公开(公告)号：US07923378B2
公开(公告)日：2011-04-12
申请号：US12320535
申请日：2009-01-28
申请人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa
发明人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa
IPC分类号： H01L21/00
CPC分类号： C23C16/452 , C23C16/345 , C23C16/402 , C23C16/45536 , H01L21/02164 , H01L21/02219 , H01L21/0228 , H01L21/31612
摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.
摘要翻译：在目标基板上通过CVD形成含硅绝缘膜，在选择性地供给包含二异丙基氨基硅烷气体的第一工艺气体和包含氧化性气体或氮化气体的第二工艺气体的工艺领域中。通过交替地执行包括第一和第二步骤的循环的多次来形成膜。第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。第二工序气体供给第二工序气体，从而氧化或氮化目标衬底表面上的吸附层。第二步骤包括通过激励机构激励第二处理气体的第二处理气体供应给处理场的激励周期。

6. 发明申请

US20100319619A1 OXIDATION METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS 审中-公开
标题翻译：氧化方法和半导体工艺的设备
公开(公告)号：US20100319619A1
公开(公告)日：2010-12-23
申请号：US12852692
申请日：2010-08-09
申请人： Takehiko FUJITA , Jun Ogawa , Shigeru Nakajima , Kazuhide Hasebe
发明人： Takehiko FUJITA , Jun Ogawa , Shigeru Nakajima , Kazuhide Hasebe
IPC分类号： C23C16/52 , C23C16/22
CPC分类号： C30B33/005 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01L21/02238 , H01L21/02252 , H01L21/31662
摘要： In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.
摘要翻译：在半导体工艺的氧化方法中，目标衬底在处理容器的工艺场内沿垂直方向间隔放置。从处理场的一侧向工艺场供给氧化气体和脱氧气体，同时从另一侧排出气体。一种或两种氧化气体和脱氧气体被激活。使氧化气体和脱氧气体相互反应，从而在工艺场内产生氧自由基和羟基自由基。通过氧自由基和羟基自由基在目标基材的表面进行氧化处理。

7. 发明申请

US20100130015A1 PATTERNING METHOD 有权
标题翻译：绘图方法
公开(公告)号：US20100130015A1
公开(公告)日：2010-05-27
申请号：US12441754
申请日：2008-06-06
申请人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
发明人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
IPC分类号： H01L21/32
CPC分类号： G03F7/405 , G03F7/0035 , H01L21/02164 , H01L21/0228 , H01L21/0271 , H01L21/0337 , H01L21/31144 , H01L21/32139
摘要： Disclosed is a patterning method including: forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and processing the first film by using the first resist pattern and the second resist pattern as a mask.
摘要翻译：公开了一种图案化方法，包括：在基板上形成第一膜; 在第一膜上形成第一抗蚀剂膜; 通过光刻将第一抗蚀剂膜加工成具有预设间距的第一抗蚀剂图案; 通过向所述基板交替地供给含有有机硅的第一气体和含有活性氧的第二气体，在所述第一抗蚀剂图案和所述第一膜上形成氧化硅膜; 在氧化硅膜上形成第二抗蚀剂膜; 通过光刻将第二抗蚀剂膜加工成具有预设间距的第二抗蚀剂图案; 以及通过使用第一抗蚀剂图案和第二抗蚀剂图案作为掩模来处理第一膜。

8. 发明申请

US20080081104A1 Film formation method and apparatus for forming silicon oxide film 有权
标题翻译：用于形成氧化硅膜的成膜方法和装置
公开(公告)号：US20080081104A1
公开(公告)日：2008-04-03
申请号：US11902782
申请日：2007-09-25
申请人： Kazuhide Hasebe , Yoshihiro Ishida , Takehiko Fujita , Jun Ogawa , Shigeru Nakajima
发明人： Kazuhide Hasebe , Yoshihiro Ishida , Takehiko Fujita , Jun Ogawa , Shigeru Nakajima
IPC分类号： C23C16/44
CPC分类号： C23C16/509 , C23C16/402 , C23C16/45542 , C23C16/45546 , H01J37/3244 , H01L21/02164 , H01L21/02222 , H01L21/02274 , H01L21/0228
摘要： An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a silicon source gas and a second process gas including an oxidizing gas. The oxide film is formed by performing cycles each alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing the adsorption layer on the surface of the target substrate. The silicon source gas is a univalent or bivalent aminosilane gas, and each of the cycles is arranged to use a process temperature lower than that used for a trivalent aminosilane gas.
摘要翻译：在选择性地供给包括硅源气体的第一工艺气体和包括氧化气体的第二工艺气体的工艺领域中，通过CVD在目标衬底上形成氧化物膜。氧化膜是通过循环执行而形成的，每个循环包括第一和第二步骤。第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。第二工序气体供给第二工序气体，从而氧化目标衬底表面上的吸附层。硅源气体是一价或二价氨基硅烷气体，并且每个循环被设置为使用低于用于三价氨基硅烷气体的工艺温度的工艺温度。

9. 发明授权

US08124181B2 Oxidation method providing parallel gas flow over substrates in a semiconductor process 有权
标题翻译：在半导体工艺中在衬底上提供平行气流的氧化方法
公开(公告)号：US08124181B2
公开(公告)日：2012-02-28
申请号：US11907968
申请日：2007-10-18
申请人： Kazuhide Hasebe , Takehiko Fujita , Shigeru Nakajima , Jun Ogawa
发明人： Kazuhide Hasebe , Takehiko Fujita , Shigeru Nakajima , Jun Ogawa
IPC分类号： C23C16/40
CPC分类号： H01L21/67109 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidation method includes supplying oxidizing and deoxidizing gases to a process field by spouting the gases in lateral directions respectively from first and second groups of gas spouting holes. Each group of holes is disposed adjacent to target substrates on one side of the process field and arrayed over a length corresponding to the process field in a vertical direction. Gases are exhausted through an exhaust port disposed opposite to the first and second groups of gas spouting holes with the process field interposed therebetween and present over a length corresponding to the process field in the vertical direction. This causes the gases to flow along the surfaces of the target substrates, thus forming gas flows parallel with the target substrates. The process field is heated by a heater disposed around the process container to generate oxygen radicals and hydroxyl group radicals within the process field.
摘要翻译：氧化方法包括通过分别从第一和第二组气体喷射孔喷射气体在横向方向向工艺场提供氧化和脱氧气体。每组孔与过程场一侧的目标衬底相邻设置，并且在垂直方向上排列在对应于过程场的长度上。气体通过与第一和第二组气体喷射孔相对设置的排气口排出，其中过程场介于它们之间并且在垂直方向上存在超过对应于过程场的长度。这使得气体沿着目标基板的表面流动，从而形成与目标基板平行的气体流。工艺场由设置在加工容器周围的加热器加热，以在工艺场内产生氧自由基和羟基自由基。

10. 发明申请

US20110065280A1 MASK PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：掩模形成方法和半导体器件制造方法
公开(公告)号：US20110065280A1
公开(公告)日：2011-03-17
申请号：US12852543
申请日：2010-08-09
申请人： Shigeru Nakajima , Kazuhide Hasebe , Hidetami Yaegashi , Eiichi Nishimura
发明人： Shigeru Nakajima , Kazuhide Hasebe , Hidetami Yaegashi , Eiichi Nishimura
IPC分类号： H01L21/306
CPC分类号： H01L21/31144 , C23C16/26 , C23C16/34 , C23C16/45542 , H01J37/32082 , H01L21/02115 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/0337 , H01L21/31122 , H01L21/32135
摘要： The method includes a film-forming process which forms a carbon film, to isotropically coat a surface of a silicon film pattern in which a first line portion formed of a silicon film that is formed on a target etching film on a substrate is arranged, an etchback process which etches back the carbon film such that the carbon film is removed from an upper portion of the first line portion and remains as a side wall portion of the first line portion, and a silicon film removing process which forms a mask pattern in which the side wall portion is arranged, by removing the first line portion.
摘要翻译：该方法包括一个形成碳膜的成膜方法，以均匀地涂覆硅衬底上形成在靶蚀刻膜上的由硅膜形成的第一线部分的硅膜图案的表面，回蚀处理，其蚀刻碳膜，使得碳膜从第一线部分的上部被去除并保留为第一线部分的侧壁部分，以及硅膜去除工艺，其形成掩模图案，其中通过移除第一线部分来布置侧壁部分。

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