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1. 发明授权

US4942441A Thin film semiconductor device and method of manufacturing the same 失效
标题翻译：薄膜半导体器件及其制造方法
公开(公告)号：US4942441A
公开(公告)日：1990-07-17
申请号：US30623
申请日：1987-03-27
申请人： Nobutake Konishi , Yoshikazu Hosokawa , Akio Mimura , Takaya Suzuki , Jun-ichi Ohwada , Hideaki Kawakami , Kenji Miyata
发明人： Nobutake Konishi , Yoshikazu Hosokawa , Akio Mimura , Takaya Suzuki , Jun-ichi Ohwada , Hideaki Kawakami , Kenji Miyata
IPC分类号： G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/8238 , H01L21/84 , H01L27/092 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： H01L27/1214 , G02F1/1368 , H01L21/84 , H01L29/7839 , G02F2202/103 , G02F2202/104
摘要： Complementary thin fillm transistors (C-TFT) formed on an insulating substrate, comprising a pair of highly resistive n-type silicon islands, a pair of heavily doped n-type regions formed in one of the islands to form source and drain regions of n-channel TFT, a pair of contacts formed on the surface of the other island and establishing a high potential barrier when the underlying region is of n-type and a low potential barrier when the underlying region is inverted to be of p-type. The process for manufacturing complementary TFTs can be simplified significantly.
摘要翻译：形成在绝缘衬底上的互补薄填充晶体管（C-TFT），包括一对高电阻性n型硅岛，在一个岛中形成的一对重掺杂n型区，以形成n和沟道TFT，一对触点形成在另一个岛的表面上，并且当下面的区域为n型时建立高电势势垒，并且当下面的区域被反相为p型时形成低电势势垒。制造互补TFT的工艺可以大大简化。

2. 发明授权

US4746961A Field effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US4746961A
公开(公告)日：1988-05-24
申请号：US59785
申请日：1987-06-08
申请人： Nobutake Konishi , Kenji Miyata , Yoshikazu Hosokawa , Takaya Suzuki , Akio Mimura
发明人： Nobutake Konishi , Kenji Miyata , Yoshikazu Hosokawa , Takaya Suzuki , Akio Mimura
IPC分类号： H01L27/12 , G02F1/1368 , H01L29/08 , H01L29/78 , H01L29/786 , H01L29/161 , H01L29/12
CPC分类号： G02F1/1368 , H01L29/0847 , H01L29/78621 , H01L2029/7863
摘要： This invention relates to the structure of a field effect transistor, which is suitable for liquid crystal display of an active matrix scheme and there is disclosed a new structure for the field effect transistor, in which at least one of the source region and the drain region is of multi-layered structure, in which high impurity concentration portions and low impurity concentration portions are alternately superposed on each other.
摘要翻译：本发明涉及适用于有源矩阵方案的液晶显示的场效应晶体管的结构，并且公开了一种用于场效应晶体管的新结构，其中源区和漏区中的至少一个是多层结构，其中高杂质浓度部分和低杂质浓度部分彼此交替重叠。

3. 发明授权

US4954855A Thin film transistor formed on insulating substrate 失效
标题翻译：绝缘基板上形成薄膜晶体管
公开(公告)号：US4954855A
公开(公告)日：1990-09-04
申请号：US113360
申请日：1987-10-28
申请人： Akio Mimura , Yoshikazu Hosokawa , Takaya Suzuki , Takashi Aoyama , Nobutake Konishi , Yutaka Misawa , Kenji Miyata
发明人： Akio Mimura , Yoshikazu Hosokawa , Takaya Suzuki , Takashi Aoyama , Nobutake Konishi , Yutaka Misawa , Kenji Miyata
IPC分类号： H01L21/336 , H01L29/45 , H01L29/49 , H01L29/786
CPC分类号： H01L29/66757 , H01L29/456 , H01L29/458 , H01L29/4908 , H01L29/7866 , H01L29/78675
摘要： A thin film transistor formed on an insulating sulstrate is disclosed in which metal silicide layers are formed in a thin film made of a monocrystalline, polycrystalline, or amorphous semiconductor material, to be used as source and drain regions, and further a gate electrode includes a metal silicide layer.
摘要翻译：公开了一种形成在绝缘硅片上的薄膜晶体管，其中金属硅化物层形成在由单晶，多晶或非晶半导体材料制成的薄膜中，用作源极和漏极区域，并且还包括一个栅电极金属硅化物层。

4. 发明授权

US4654691A Semiconductor device with field plate 失效
标题翻译：具有现场板的半导体器件
公开(公告)号：US4654691A
公开(公告)日：1987-03-31
申请号：US816979
申请日：1986-01-07
申请人： Toshikatsu Shirasawa , Yoshikazu Hosokawa
发明人： Toshikatsu Shirasawa , Yoshikazu Hosokawa
IPC分类号： H01L29/41 , H01L29/06 , H01L29/40 , H01L29/74 , H01L29/52 , H01L27/12 , H01L29/743
CPC分类号： H01L29/404 , H01L29/7436
摘要： Field plates for relaxing electric fields are provided for an active element in a semiconductor integrated circuit. A field plate integral with an electrode making ohmic contact with an elongated strip shaped diffusion region and extending beyond a pn-junction formed between the diffusion region and an adjacent region to surround the pn-junction has a larger width at its opposite ends than a width at its linear portions. A high breakdown voltage can be obtained by thus configuring the field plate without changing the diffusion region in size.
摘要翻译：为半导体集成电路中的有源元件提供用于放电电场的场板。与电极形成欧姆接触的电场板与细长带状扩散区域并延伸超过形成在扩散区域和相邻区域之间以围绕pn结的pn结的宽度在其相对端宽度大于宽度在其线性部分。通过这样构成场板可以在不改变扩散区域的情况下获得高的击穿电压。

5. 发明授权

US4063115A Semiconductor switch 失效
标题翻译：半导体开关
公开(公告)号：US4063115A
公开(公告)日：1977-12-13
申请号：US720492
申请日：1976-09-03
申请人： Shinzi Okuhara , Yoshikazu Hosokawa , Tatsuya Kamei , Masayoshi Suzuki
发明人： Shinzi Okuhara , Yoshikazu Hosokawa , Tatsuya Kamei , Masayoshi Suzuki
IPC分类号： H02M1/08 , H03K17/082 , H03K17/73 , H03K17/72
CPC分类号： H03K17/73 , H03K17/0824
摘要： A semiconductor switch assuring the easy formation of a semiconductor integrated circuit and having high control sensitivity while maintaining high dv/dt - immunity, which comprises a PNPN switch of an equivalently four-layered structure including at least three PN-junctions, an anode and a cathode, switching means including a control terminal and connected with the PNPN switch to shunt one of the three PN-junctions at either one end of the PNPN switch, amplifying means, and a capacitive element for differentiating a voltage applied between the anode and the cathode of the PNPN switch to allow a current to flow into the control terminal of the switching means through the amplifying means, so that the switching means is driven by the current thereby to short-circuit the one of three PN-junctions.
摘要翻译：半导体开关确保容易地形成半导体集成电路并且具有高的控制灵敏度，同时保持高的dv / dt-抗扰度，其包括具有至少三个PN结的等效四层结构的PNPN开关，阳极和阴极，包括控制端并与PNPN开关连接的开关装置，以分流PNPN开关的任一端的三个PN结中的一个，放大装置和用于区分施加在阳极和阴极之间的电压的电容元件的PNPN开关以允许电流通过放大装置流入开关装置的控制端，使得开关装置由电流驱动，从而使三个PN结中的一个短路。

6. 发明授权

US3958268A Thyristor highly proof against time rate of change of voltage 失效
标题翻译：电压检测器对电压变化的时间速率进行高度检测
公开(公告)号：US3958268A
公开(公告)日：1976-05-18
申请号：US466850
申请日：1974-05-03
申请人： Tatsuya Kamei , Yoshikazu Hosokawa
发明人： Tatsuya Kamei , Yoshikazu Hosokawa
IPC分类号： H01L29/74 , H01L29/749
CPC分类号： H01L29/749 , H01L29/7436
摘要： A thyristor highly proof against dv/dt in which to prevent malignition due to the displacement current produced by the application of an abruptly rising forward voltage or the internal leakage current increasing with the temperature rise of the semiconductor substrate, an auxiliary electrode is provided to the intermediate region adjacent to one of the outermost regions of the semiconductor substrate to which two main electrodes, anode and cathode, are provided, the auxiliary electrode and the main electrode on the one outermost region being connected electrically, and a control region having the opposite conductivity type to that of the intermediate region is formed in the intermediate region between the auxiliary electrode and the main electrode on the one outermost region, the control region being provided with a gate electrode. By supplying a control signal to the gate electrode a depletion layer is produced in the intermediate region such that the path of the control signal from the gate electrode to the auxiliary electrode is completely blocked and the control signal is all utilized for the ignition. The displacement current and the leakage current are bypassed from the auxiliary electrode to the main electrode on the one outermost region.

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