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    • 4. 发明申请
    • METHOD FOR MANUFACTURING A MAGNETIC SENSOR HAVING A FLAT UPPER SHIELD
    • 用于制造具有平坦上层屏蔽的磁传感器的方法
    • US20120187079A1
    • 2012-07-26
    • US13010908
    • 2011-01-21
    • Hideki MashimaNobuo Yoshida
    • Hideki MashimaNobuo Yoshida
    • G11B5/127C23F1/00
    • G11B5/398G01R33/098G11B5/3163G11B5/3912G11B5/3932
    • A method for manufacturing a magnetic sensor that has a flat upper shield. A sensor stack is formed with a sensor capping layer at its top and a first CMP stop layer over the sensor capping layer and a mask formed over the CMP stop layer. A hard bias layer and second CMP stop layer are deposited over the sensor stack, capping layer, first CMP stop layer and mask. A chemical mechanical polishing process is then performed to remove the mask, leaving a portion of the hard bias layer exposed between the first and second CMP stop layers. An ion milling is then performed to etch back the exposed portions of the hard magnetic bias layer. A reactive ion etching is then performed to remove the remaining first and second CMP top layers. An upper shield can then be formed on a substantially flat surface.
    • 一种制造具有平坦的上屏蔽的磁传感器的方法。 传感器堆叠在其顶部形成有传感器覆盖层,并且在传感器覆盖层上方形成第一CMP停止层,并且在CMP停止层上形成掩模。 在传感器堆叠,封盖层,第一CMP停止层和掩​​模上沉积硬偏压层和第二CMP停止层。 然后执行化学机械抛光工艺以去除掩模,使得一部分硬偏压层暴露在第一和第二CMP停止层之间。 然后进行离子铣削以蚀刻硬磁偏置层的暴露部分。 然后执行反应离子蚀刻以去除剩余的第一和第二CMP顶层。 然后可以在基本平坦的表面上形成上屏蔽。
    • 10. 发明授权
    • Magnetoresistive head with a CPP structure having suppressed side reading
    • 具有抑制侧读的CPP结构的磁阻头
    • US09230574B2
    • 2016-01-05
    • US12631295
    • 2009-12-04
    • Nobuo YoshidaKatsuro WatanabeMasahiro OusugiAtsushi Kato
    • Nobuo YoshidaKatsuro WatanabeMasahiro OusugiAtsushi Kato
    • G11B5/39B82Y10/00B82Y25/00
    • G11B5/3909B82Y10/00B82Y25/00G11B5/3932G11B2005/3996Y10T29/49032
    • According to one embodiment, a CPP structure magnetoresistive head includes a magnetoresistive sensor film between a lower shield layer and an upper shield layer and a longitudinal biasing layer disposed at each side of the magnetoresistive sensor film via a read track width defining insulator film. In the stripe height direction, the length of the longitudinal biasing layer is longer than the length of a second ferromagnetic layer in which its magnetization rotates in response to the external magnetic field. The second ferromagnetic layer is one of the layers comprising the magnetoresistive sensor film. At a stripe height, the surface of each longitudinal biasing layer has a step to change the thickness thereof across the step so that the air bearing surface section thereof has a larger thickness than any other section. Other structures using a magnetoresistive head and methods of production thereof are described as well.
    • 根据一个实施例,CPP结构磁阻头包括在下屏蔽层和上屏蔽层之间的磁阻传感器膜和经由读磁道宽度限定绝缘膜设置在磁阻传感器膜的每一侧的纵向偏置层。 在条带高度方向上,纵向偏置层的长度长于其磁化响应于外部磁场而旋转的第二铁磁层的长度。 第二铁磁层是包括磁阻传感器膜的层之一。 在条带高度处,每个纵向偏置层的表面具有改变其横跨该台阶的厚度的步骤,使得其空气轴承表面部分具有比任何其它部分更大的厚度。 还描述了使用磁阻头的其它结构及其生产方法。