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1. 发明授权

US08537505B2 Magnetoresistive effect head having a free layer and a magnetic domain control layer that applies a magnetic field more strongly in an upper part of the free layer 有权
标题翻译：具有自由层和磁畴控制层的磁阻效应头，其在自由层的上部更强地施加磁场
公开(公告)号：US08537505B2
公开(公告)日：2013-09-17
申请号：US12784405
申请日：2010-05-20
申请人： Masato Shiimoto , Kan Yasui , Nobuo Yoshida , Hiroyuki Takazawa
发明人： Masato Shiimoto , Kan Yasui , Nobuo Yoshida , Hiroyuki Takazawa
IPC分类号： G11B5/39 , G11B5/11
CPC分类号： G11B5/3932 , B82Y25/00 , G01R33/093 , G01R33/098 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive effect head includes a lower magnetic shield provided on a substrate, a magnetoresistive effect film laminated from a pinned layer with a pinned direction of magnetization, an intermediate layer, a free layer having a varying direction of magnetization controlled by an applied external magnetic field, a magnetic domain control layer formed with an intervening insulation layer on both sides in a track width direction of the magnetoresistive effect film, an upper magnetic shield, and electrodes for directing sense current flow in a direction perpendicular to a film surface of the magnetoresistive effect film, wherein a magnetic field applied by the magnetic domain control layer to a region away from an ABS of the free layer is at least 1.4 times larger than a magnetic field applied by the magnetic domain control layer to a region near the ABS of the free layer.
摘要翻译：根据一个实施例，磁阻效应头包括设置在基板上的下磁屏蔽，从具有钉扎方向的钉扎层层压的磁阻效应膜，中间层，具有变化的磁化方向的自由层，施加的外部磁场，在磁阻效应膜的磁道宽度方向上在两侧形成有中间绝缘层的磁畴控制层，上磁屏蔽和用于引导垂直于膜的方向的感测电流的电极磁阻效应膜的表面，其中由磁畴控制层施加到远离自由层的ABS的区域的磁场比由磁畴控制层施加到接近的区域的磁场的至少大1.4倍 ABS的自由层。

2. 发明申请

US20100302688A1 Magnetoresistive Effect Head and Magnetic Recording/Playback Device 有权
标题翻译：磁阻效应头和磁记录/播放装置
公开(公告)号：US20100302688A1
公开(公告)日：2010-12-02
申请号：US12784405
申请日：2010-05-20
申请人： Masato Shiimoto , Kan Yasui , Nobuo Yoshida , Hiroyuki Takazawa
发明人： Masato Shiimoto , Kan Yasui , Nobuo Yoshida , Hiroyuki Takazawa
IPC分类号： G11B5/127
CPC分类号： G11B5/3932 , B82Y25/00 , G01R33/093 , G01R33/098 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive effect head includes a lower magnetic shield provided on a substrate, a magnetoresistive effect film laminated from a pinned layer with a pinned direction of magnetization, an intermediate layer, a free layer having a varying direction of magnetization controlled by an applied external magnetic field, a magnetic domain control layer formed with an intervening insulation layer on both sides in a track width direction of the magnetoresistive effect film, an upper magnetic shield, and electrodes for directing sense current flow in a direction perpendicular to a film surface of the magnetoresistive effect film, wherein a magnetic field applied by the magnetic domain control layer to a region away from an ABS of the free layer is at least 1.4 times larger than a magnetic field applied by the magnetic domain control layer to a region near the ABS of the free layer.
摘要翻译：根据一个实施例，磁阻效应头包括设置在基板上的下磁屏蔽，从具有钉扎方向的钉扎层层压的磁阻效应膜，中间层，具有变化的磁化方向的自由层，施加的外部磁场，在磁阻效应膜的磁道宽度方向上在两侧形成有中间绝缘层的磁畴控制层，上磁屏蔽和用于引导垂直于膜的方向的感测电流的电极磁阻效应膜的表面，其中由磁畴控制层施加到远离自由层的ABS的区域的磁场比由磁畴控制层施加到接近的区域的磁场的至少大1.4倍 ABS的自由层。

3. 发明授权

US08385847B2 Switching element, antenna switch circuit and radio frequency module using the same 有权
公开(公告)号：US08385847B2
公开(公告)日：2013-02-26
申请号：US12929940
申请日：2011-02-25
申请人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
发明人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H04B1/44
CPC分类号： H01L27/0605 , H01L27/0629 , H01L29/42316 , H01L29/66462 , H01L29/7783 , H01L2924/0002 , H01L2924/00
摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

4. 发明授权

US07768066B2 Semiconductor device and electrical circuit device using thereof 有权
标题翻译：半导体装置及其电路装置
公开(公告)号：US07768066B2
公开(公告)日：2010-08-03
申请号：US12179549
申请日：2008-07-24
申请人： Hidekatsu Onose , Hiroyuki Takazawa
发明人： Hidekatsu Onose , Hiroyuki Takazawa
IPC分类号： H01L29/94
CPC分类号： H01L29/7828 , H01L25/18 , H01L29/0623 , H01L29/0696 , H01L29/1608 , H01L29/66068 , H01L29/7391 , H01L2924/0002 , H01L2924/00
摘要： A UMOSFET is capable of reducing a threshold voltage and producing a large saturation current. A typical UMOSFET according to the present invention includes: an N+ type SiC substrate constituting a drain layer; an N− type SiC layer that is in contact with the drain layer and constitutes a drift layer; a P type body layer formed on the drift layer and being a semiconductor layer; an N+ type SiC layer constituting a source layer; a trench extending from the source layer to a predetermined location placed in the drift layer; a P type electric field relaxation region provided around and outside a bottom portion of the trench; and a channel region extending from the N+ type source layer to the P type electric field relaxation region and having an impurity concentration higher than that of the N− type drift layer and lower than that of the P type body layer.
摘要翻译： UMOSFET能够降低阈值电压并产生大的饱和电流。根据本发明的典型的UMOSFET包括：构成漏极层的N +型SiC衬底; 与漏极层接触并构成漂移层的N型SiC层; 形成在所述漂移层上并且是半导体层的P型体层; 构成源极层的N +型SiC层; 从源极层延伸到放置在漂移层中的预定位置的沟槽; 设置在沟槽的底部周围和外侧的P型电场弛豫区域; 以及从N +型源极层向P型电场弛豫区域延伸并且杂质浓度高于N型漂移层的杂质浓度并低于P型体层的沟道区域。

5. 发明申请

US20090104881A1 Switching element, antenna switch circuit and radio frequency module using the same 有权
标题翻译：开关元件，天线开关电路和射频模块使用相同
公开(公告)号：US20090104881A1
公开(公告)日：2009-04-23
申请号：US12314644
申请日：2008-12-15
申请人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
发明人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H04B1/44 , H01L29/778
CPC分类号： H01L27/0605 , H01L27/0629 , H01L29/42316 , H01L29/66462 , H01L29/7783 , H01L2924/0002 , H01L2924/00
摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.
摘要翻译：提供了一种开关元件，其实现了在不增加插入损耗的情况下使多栅极的栅极之间的电位稳定，并且每个使用开关元件的天线开关电路和射频模块。开关元件包括形成在半导体衬底上的两个欧姆电极39,40，设置在两个欧姆电极之间的至少两个栅极电极41,42以及设置在至少两个栅电极之间的相邻栅电极之间的导电区域45，场效应晶体管由两个欧姆电极，至少两个栅极电极和导电区域构成。导电区域的宽度部分的宽度比插入在其一端的相邻栅电极之间的导电区域宽。相邻栅电极之间的距离比较宽部分的宽度窄。电阻器44,46通过较宽部分串联连接在两个欧姆电极之间。

6. 发明授权

US06528378B2 Semiconductor device 有权
公开(公告)号：US06528378B2
公开(公告)日：2003-03-04
申请号：US10134522
申请日：2002-04-30
申请人： Koji Hirata , Hiroyuki Takazawa
发明人： Koji Hirata , Hiroyuki Takazawa
IPC分类号： H01L21331
CPC分类号： H01L29/66318 , H01L29/7371 , H03F3/195 , H03F3/60
摘要： To provide a super high-speed heterojunction bipolar transistor, a semiconductor device including such a heterojunction bipolar transistor has a structure wherein a subcollector layer, collector layer, base layer, emitter layer (InGaP layer) and emitter cap layer are successively formed in predetermined shapes a surface of a semi-insulating GaAs substrate, an inner edge part of a base electrode overlaps a periphery of the emitter layer, and the base electrode is electrically connected to the base layer by an alloy layer formed by alloying the emitter layer under the base electrode. The emitter layer is selectively formed on the base layer. The base electrode extends from the peripheral part of the emitter layer across the base layer, and the alloy layer extends to a midway depth of the base layer. The edge of the base layer is situated further inside than the outer edge of the base electrode.

7. 发明授权

US07307298B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07307298B2
公开(公告)日：2007-12-11
申请号：US10989388
申请日：2004-11-17
申请人： Masao Yamane , Atsushi Kurokawa , Shinya Osakabe , Eigo Tange , Yasushi Shigeno , Hiroyuki Takazawa
发明人： Masao Yamane , Atsushi Kurokawa , Shinya Osakabe , Eigo Tange , Yasushi Shigeno , Hiroyuki Takazawa
IPC分类号： H01L29/80 , H01L31/12
CPC分类号： H01L29/7787 , H01L21/8252 , H01L27/0605
摘要： The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.
摘要翻译：本发明将用作射频模块中的开关元件的HEMT元件小型化。单个栅极电极17形成在由包含GaAs的基板1的主表面上的元件分离部分9限定的有源区域中。栅电极17被图案化以在源电极13和漏电极14之间的页表面的垂直方向上延伸，并且在其它部分沿左右方向延伸。因此，设置在有源区域之外的栅电极17的比率减小，并且栅极焊盘17A的面积减小。

8. 发明申请

US20060118951A1 Switching element, antenna switch circuit and radio frequency module using the same 审中-公开
公开(公告)号：US20060118951A1
公开(公告)日：2006-06-08
申请号：US11291815
申请日：2005-12-02
申请人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
发明人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H01L23/34
CPC分类号： H01L27/0605 , H01L27/0629 , H01L29/42316 , H01L29/66462 , H01L29/7783 , H01L2924/0002 , H01L2924/00
摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

9. 发明授权

US06724020B2 Semiconductor device and power amplifier using the same 有权
标题翻译：半导体器件和功率放大器使用相同
公开(公告)号：US06724020B2
公开(公告)日：2004-04-20
申请号：US10420764
申请日：2003-04-23
申请人： Hiroyuki Takazawa , Tohru Oka , Isao Ohbu , Yoshinori Imamura
发明人： Hiroyuki Takazawa , Tohru Oka , Isao Ohbu , Yoshinori Imamura
IPC分类号： H01L31109
CPC分类号： H01L29/7371 , H03F3/60
摘要： A semiconductor device comprising a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which is formed on the surface of the guard ring of the emitter layer, wherein the protective insulating film has a density of oxygen of less than 7×1022 cm−3. This semiconductor device prevents performance deterioration and ensures high performance in a power amplifier.
摘要翻译：一种半导体器件，包括具有由包含铟的半导体构成的发射极层的双极晶体管和形成在发射极层的保护环的表面上的含有氧和氧的保护绝缘膜，其中该保护绝缘膜具有密度的氧气小于7×10 22 cm -3。该半导体器件防止性能恶化并确保功率放大器的高性能。

10. 发明授权

US06392258B1 High speed heterojunction bipolar transistor, and RF power amplifier and mobile communication system using the same 有权
标题翻译：高速异质结双极晶体管，射频功率放大器和移动通信系统使用相同
公开(公告)号：US06392258B1
公开(公告)日：2002-05-21
申请号：US09516160
申请日：2000-02-29
申请人： Koji Hirata , Hiroyuki Takazawa
发明人： Koji Hirata , Hiroyuki Takazawa
IPC分类号： H01L29737
CPC分类号： H01L29/66318 , H01L29/7371 , H03F3/195 , H03F3/60
摘要： To provide a super high-speed heterojunction bipolar transistor, a semiconductor device including such a heterojunction bipolar transistor has a structure wherein a subcollector layer, collector layer, base layer, emitter layer (InGaP layer) and emitter cap layer are successively formed in predetermined shapes a surface of a semi-insulating GaAs substrate, an inner edge part of a base electrode overlaps a periphery of the emitter layer, and the base electrode is electrically connected to the base layer by an alloy layer formed by alloying the emitter layer under the base electrode. The emitter layer is selectively formed on the base layer. The base electrode extends from the peripheral part of the emitter layer across the base layer, and the alloy layer extends to a midway depth of the base layer. The edge of the base layer is situated further inside than the outer edge of the base electrode.
摘要翻译：为了提供超高速异质结双极晶体管，包括这种异质结双极晶体管的半导体器件具有其中以预定形状连续形成子集电极层，集电极层，基极层，发射极层（InGaP层）和发射极盖层的结构半绝缘GaAs衬底的表面，基极的内边缘部分与发射极层的周边重叠，并且基极通过合金层与基底层电连接，所述合金层通过将发射极层合在基底电极。发射极层选择性地形成在基底层上。基极从发射极层的周边部分穿过基底层延伸，合金层延伸到基底层的中间深度。基层的边缘比基极的外边缘更靠内侧。

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