会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Plasma treatment system
    • 等离子体处理系统
    • US06322662B1
    • 2001-11-27
    • US09494031
    • 2000-01-31
    • Nobuo IshiiYasuo KobayashiTamotsu MorimotoMakoto AndoNaohisa Goto
    • Nobuo IshiiYasuo KobayashiTamotsu MorimotoMakoto AndoNaohisa Goto
    • H05H100
    • H01J37/32211H01J37/32192H05H1/46
    • In a plasma treatment system, the increase of the electric field of a treatment space facing the central portion of a flat antenna member is relieved, and the ununiformity of the density of plasma in a plasma forming region is relieved. Microwave generated by a microwave generator 50 are supplied from a waveguide 52 to a flat antenna member 44. The flat antenna member 44 has a plurality of slots 60. The space between adjacent two of the slots 60 is longer than the guide wavelength of microwaves in the waveguide 52, and the length of each of the slots 60 is shorter than half of the guide wavelength. The slots 60 are arranged in a region other than the central portion of the flat antenna member 44 so as not to be axisymmetric.
    • 在等离子体处理系统中,减轻了面向平坦天线构件的中心部分的处理空间的电场的增加,等离子体形成区域中的等离子体的密度不均匀被缓解。微波发生器产生的微波 50由波导52供给到平面天线构件44.平坦天线构件44具有多个槽60.相邻的两个槽60之间的空间比波导52中的微波的引导波长长, 每个槽60的长度短于导向波长的一半。 狭槽60布置在平坦天线构件44的除中心部分之外的区域中以便不是轴对称的。
    • 2. 发明申请
    • Plasma processing apparatus and processing method, and flat panel display manufacturing method
    • 等离子体处理装置和处理方法,以及平板显示器制造方法
    • US20070045242A1
    • 2007-03-01
    • US11210851
    • 2005-08-25
    • Naohisa GotoTadahiro OhmiTamotsu Morimoto
    • Naohisa GotoTadahiro OhmiTamotsu Morimoto
    • B23K9/00B23K9/02
    • H01J37/32192H01J37/32229
    • A plasma processing apparatus includes a stage, processing vessel, and microwave supply device. A target object is placed on the stage. The processing vessel accommodates the stage. The microwave supply device supplies microwaves into the processing vessel, and includes a parallel-plate waveguide, a plurality of slots, a square waveguide array, and a distributor. The parallel-plate waveguide includes a first conductive plate which is rectangular when seen from the top and arranged to oppose the stage, and a second conductive plate which is arranged substantially parallel to the first conductive plate and has the same shape as that of the first conductive plate when seen from the top. The plurality of slots are formed in the first conductive plate. The square waveguide array includes a plurality of square waveguides aligned in their widthwise directions (X) perpendicular to there axial directions (Y). One end of each of the square waveguides is connected to the parallel-plate waveguide. The distributor is connected to the other end of each of the square waveguides and distributes and supplies the microwaves to the square waveguides with the same phase. A plasma processing method and a flat panel display manufacturing method are also disclosed.
    • 等离子体处理装置包括载物台,处理容器和微波供给装置。 目标对象放置在舞台上。 处理容器容纳阶段。 微波供给装置向处理容器提供微波,并且包括平行板波导,多个槽,方波导阵列和分配器。 平行板波导包括第一导电板,其从顶部观察并且布置成与台架相对,并且第二导电板被布置成基本上平行于第一导电板并且具有与第一导电板相同的形状 导电板从顶部看。 多个槽形成在第一导电板中。 该方波导阵列包括在其轴向(Y)上垂直于其宽度方向(X)排列的多个方波导。 每个方波导的一端连接到平行板波导。 分配器连接到每个方波导的另一端,并将微波分布并提供给具有相同相位的方波导。 还公开了等离子体处理方法和平板显示器制造方法。
    • 4. 发明申请
    • ANTIREFLECTOR AND DISPLAY DEVICE
    • 防反射和显示设备
    • US20100014163A1
    • 2010-01-21
    • US12493262
    • 2009-06-29
    • Tamotsu MorimotoMichihisa Tomida
    • Tamotsu MorimotoMichihisa Tomida
    • G02B1/11B32B7/02
    • G02B1/115G02B1/116Y10T428/24942
    • There are provided an antireflector having a simple layer structure, a high visible light transmittance, a low visible light reflectance and an excellent anti-fingerprint property, and a display device having an excellent viewability.An antireflector 1 including a substrate 10 and an antireflection film 20; the antireflection film 20 having a first high refractive index layer 22, a metal layer 24, a second high refractive index layer 26 and a low refractive index layer 28 disposed therein sequentially from a substrate side facing the substrate 1; the first high refractive index layer containing at least one member selected from the group consisting of tin, gallium and cerium in the form of an oxide, and indium in the form of an oxide; the metal layer containing silver and palladium and having a palladium content of from 3 to 20 mass % relative to the total amount of the metal layer (100 mass %); the second high refractive index layer containing at least one member selected from the group consisting of tin, gallium and cerium in the form of an oxide and indium in the form of an oxide. A display device including the antireflector 1 disposed on an observer' side of a display panel.
    • 提供了具有简单的层结构,高可见光透射率,低可见光反射率和优异的抗指纹性的抗反射器,以及具有优异的可视性的显示装置。 包括基板10和抗反射膜20的抗反射器1; 具有从面向衬底1的衬底侧依次设置的第一高折射率层22,金属层24,第二高折射率层26和低折射率层28的抗反射膜20; 所述第一高折射率层含有选自氧化物形式的锡,镓和铈中的至少一种,氧化物形式的铟; 含有银和钯的金属层,相对于金属层的总量为100质量%,钯含量为3〜20质量%。 所述第二高折射率层含有选自氧化物形式的锡,镓和铈和氧化物形式的铟中的至少一种。 一种显示装置,包括设置在显示面板的观察者侧的防反射体1。
    • 5. 发明授权
    • Method of etching
    • 蚀刻方法
    • US06812151B1
    • 2004-11-02
    • US09233073
    • 1999-01-19
    • Kenichi NanbuTamotsu Morimoto
    • Kenichi NanbuTamotsu Morimoto
    • H01L21302
    • H01J37/321H01L21/3065
    • An etching method is carried out by an etching system comprising a gas supply port for supplying an etching gas, a plasma producing vessel defining a plasma producing chamber in which the etching gas is converted into a plasma to produce radicals, a reaction vessel connected to the plasma producing vessel and defining a reaction chamber of a diameter greater than that of the plasma producing chamber, a support table placed in the reaction chamber to support an object to be processed to be etched by the radicals flowing down thereto from the plasma producing chamber, and a vacuum exhaust system for evacuating the reaction chamber. The etching gas is supplied through the etching gas supply port at an etching gas supply rate of 8.4 sccm or above per a substantial volume of one liter of the reaction chamber.
    • 通过蚀刻系统进行蚀刻方法,该蚀刻系统包括用于供给蚀刻气体的气体供给口,限定等离子体生成室的等离子体生成容器,其中蚀刻气体被转换成等离子体以产生自由基,反应容器连接到 等离子体产生容器并且限定直径大于等离子体产生室直径的反应室;支撑台,放置在反应室中,以支撑待处理对象被从等离子体产生室向下流动的自由基蚀刻, 以及用于抽空反应室的真空排气系统。 通过蚀刻气体供给口以相对于1升反应室的体积为8.4sccm以上的蚀刻气体供给量供给蚀刻气体。
    • 6. 发明授权
    • Heat processing apparatus
    • 热处理设备
    • US5567152A
    • 1996-10-22
    • US420075
    • 1995-04-11
    • Tamotsu Morimoto
    • Tamotsu Morimoto
    • H01L21/22C23C16/48C30B25/10C30B31/12H01L21/00H01L21/205H01L21/31H01L21/324F27D3/12
    • H01L21/67109C23C16/481C30B25/10C30B31/12
    • A heat processing apparatus for subjecting heat processing to a wafer by heating includes a reaction tube for containing the wafers, a heating element provided around the reaction tube, for heating an inside of the reaction tube, a plurality of heat radiating members provided concentrically around the heating element with an airtight space between the heating element and an innermost one of the heat radiating members and airtight spaces between the heat radiating members, and a pressure-reducing device for reducing the pressure of these airtight spaces. In this heat processing apparatus, the pressures of the airtight spaces are reduced by the pressure-reducing means at least when the temperature of the inside of the reaction tube is increased.
    • 用于通过加热对晶片进行热处理的热处理装置包括:用于容纳晶片的反应管,设置在反应管周围的加热元件,用于加热反应管的内部;多个散热构件,其围绕 加热元件与加热元件之间的气密空间和散热构件中的最内侧之间以及散热构件之间的气密空间,以及用于降低这些气密空间的压力的减压装置。 在该热处理装置中,至少在反应管内部的温度升高时,通过减压装置降低气密空间的压力。
    • 9. 发明授权
    • Apparatus for and method of processing an object to be processed
    • 用于处理待处理物体的装置和方法
    • US06793834B2
    • 2004-09-21
    • US10197859
    • 2002-07-19
    • Tamotsu Morimoto
    • Tamotsu Morimoto
    • H01L21302
    • H01J37/32623H01J37/3266H01J37/3405
    • A magnetron reactive ion etching apparatus comprises: an electrode unit including electrodes facing each other through a semiconductor device; a high-frequency power source forming an electric field on the electrode unit; a dipole ring magnet; and a switching mechanism. The dipole ring magnet forms the first magnetic field state, including a magnetic field in a direction perpendicular to a direction of the electric field or in a direction parallel to the semiconductor device, and the second magnetic field state, including a magnetic field whose strength at the periphery of the surface of the semiconductor device is so satisfactory that an electron Larmor radius is larger than the mean free path of electrons. The first magnetic field state is switched to the second magnetic field state at a predetermined timing by the switching mechanism which is controlled by a controller.
    • 磁控管反应离子蚀刻装置包括:电极单元,其包括通过半导体器件彼此面对的电极; 在所述电极单元上形成电场的高频电源; 偶极环磁铁; 和切换机构。 偶极环磁体形成第一磁场状态,包括在垂直于电场方向的方向上或在与半导体器件平行的方向上的磁场,以及第二磁场状态,包括磁场强度 半导体器件的表面的周边如此令人满意,使得电子拉莫尔半径大于电子的平均自由程。 第一磁场状态通过由控制器控制的切换机构在预定定时切换到第二磁场状态。