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1. 发明授权

US07740946B2 Electroconductive laminate, and electromagnetic wave shielding film for plasma display and protective plate for plasma display 失效
标题翻译：导电层压板，等离子体显示用电磁波屏蔽膜及等离子体显示用保护板
公开(公告)号：US07740946B2
公开(公告)日：2010-06-22
申请号：US11839839
申请日：2007-08-16
申请人： Tamotsu Morimoto , Masato Kawasaki , Makoto Hiramoto , Koichi Kanda , Susumu Nakagama
发明人： Tamotsu Morimoto , Masato Kawasaki , Makoto Hiramoto , Koichi Kanda , Susumu Nakagama
IPC分类号： B32B9/00
CPC分类号： H05K9/0096 , B32B17/10018
摘要： To provide an electroconductive laminate excellent in electrical conductivity and visible light transparency, an electromagnetic wave shielding film for a plasma display, and a protective plate for a plasma display having excellent electromagnetic wave shielding properties, a broad transmission/reflection band and a high visible light transmittance.An electroconductive laminate 10 comprising a substrate 11, and an electroconductive film 12 having a three-layer structure having a first oxide layer 12a, a metal layer 12b and a second oxide layer 12c laminated sequentially from the substrate 11 side, or having a 3×n layer structure (wherein n is an integer of at least 2) having the above three-layer structure repeated, wherein the first oxide layer 12a contains “zinc oxide” and “titanium oxide or niobium oxide”, the metal layer 12b is a layer containing silver, and the second oxide layer 12c contains a mixture of zinc oxide and aluminum oxide, or the like.
摘要翻译：为了提供导电性和可见光透明性优异的导电性层叠体，等离子体显示用电磁波屏蔽膜和具有优异的电磁波屏蔽性，宽透射/反射带和高可见光的等离子体显示用保护板透光率。包含基板11的导电性层叠体10和具有三层结构的导电性膜12，具有从基板11侧依次层叠的第一氧化物层12a，金属层12b和第二氧化物层12c，或者具有3× 重复上述三层结构的n层结构（其中n为至少为2的整数），其中第一氧化物层12a包含“氧化锌”和“氧化钛或氧化铌”，金属层12b是层并且第二氧化物层12c含有氧化锌和氧化铝的混合物等。

2. 发明申请

US20070298265A1 ELECTROCONDUCTIVE LAMINATE, AND ELECTROMAGNETIC WAVE SHIELDING FILM FOR PLASMA DISPLAY AND PROTECTIVE PLATE FOR PLASMA DISPLAY 失效
标题翻译：电磁层压板，等离子体显示用电磁波屏蔽膜和等离子体显示用保护板
公开(公告)号：US20070298265A1
公开(公告)日：2007-12-27
申请号：US11839839
申请日：2007-08-16
申请人： Tamotsu Morimoto , Masato Kawasaki , Makoto Hiramoto , Koichi Kanda , Susumu Nakagama
发明人： Tamotsu Morimoto , Masato Kawasaki , Makoto Hiramoto , Koichi Kanda , Susumu Nakagama
IPC分类号： B32B17/06 , B32B15/04
CPC分类号： H05K9/0096 , B32B17/10018
摘要： To provide an electroconductive laminate excellent in electrical conductivity and visible light transparency, an electromagnetic wave shielding film for a plasma display, and a protective plate for a plasma display having excellent electromagnetic wave shielding properties, a broad transmission/reflection band and a high visible light transmittance. An electroconductive laminate 10 comprising a substrate 11, and an electroconductive film 12 having a three-layer structure having a first oxide layer 12a, a metal layer 12b and a second oxide layer 12c laminated sequentially from the substrate 11 side, or having a 3×n layer structure (wherein n is an integer of at least 2) having the above three-layer structure repeated, wherein the first oxide layer 12a contains “zinc oxide” and “titanium oxide or niobium oxide”, the metal layer 12b is a layer containing silver, and the second oxide layer 12c contains a mixture of zinc oxide and aluminum oxide, or the like.
摘要翻译：为了提供导电性和可见光透明性优异的导电性层叠体，等离子体显示用电磁波屏蔽膜和具有优异的电磁波屏蔽性，宽透射/反射带和高可见光的等离子体显示用保护板透光率。包含基板11的导电层压板10和具有三层结构的导电膜12具有第一氧化物层12a，金属层12b和第二氧化物层12c，其从基板11侧依次层叠，或具有重复上述三层结构的3×n层结构（其中n为至少为2的整数），其中第一氧化物层12a包含“氧化锌”和“氧化钛或氧化铌”，金属层12b 是含有银的层，第二氧化物层12c含有氧化锌和氧化铝的混合物等。

3. 发明授权

US07937822B2 Method for connecting tab pattern and lead wire 有权
标题翻译：连接标签图案和导线的方法
公开(公告)号：US07937822B2
公开(公告)日：2011-05-10
申请号：US12454967
申请日：2009-05-27
申请人： Eiji Misaizu , Makoto Hiramoto
发明人： Eiji Misaizu , Makoto Hiramoto
IPC分类号： G01R3/00
CPC分类号： H05K3/3405 , G01L1/2287 , H05K1/118 , H05K2201/09381 , H05K2201/09427 , H05K2201/10287 , H05K2201/1034 , Y10T29/49007 , Y10T29/49117 , Y10T29/49147 , Y10T29/49155 , Y10T29/49156
摘要： A method is for connecting a tab pattern formed on a base sheet and a lead wire, wherein the tab pattern includes: a tab main portion; and a connecting portion formed to continue from one edge line of the tab main portion and to extend from the tab main portion along an extension line that is substantially orthogonal to the edge line, and wherein the method includes: connecting the lead wire on the tab main portion by bonding the lead wire at a position being displaced from the extension line of the connecting portion for more than a given offset amount where the extension line is identical to a center line of the connecting portion, the position being within a given distance from the edge line of the tab main portion.
摘要翻译：一种用于连接形成在基片和引线上的突片图案的方法，其中突片图案包括：突片主体部分; 以及连接部，其形成为从所述突片主体的一个边缘线延伸并且从所述突片主体部分沿着与所述边缘线大致正交的延伸线延伸，并且其中所述方法包括：将所述引线连接到所述突片主要部分通过将引线接合在从连接部分的延伸线偏移超过给定偏移量的位置处，其中延伸线与连接部分的中心线相同，该位置在距离突片主体部分的边缘线。

4. 发明授权

US07612347B2 Charged particle beam apparatus and charged particle beam resolution measurement method 有权
标题翻译：带电粒子束装置和带电粒子束分辨率测量方法
公开(公告)号：US07612347B2
公开(公告)日：2009-11-03
申请号：US11774823
申请日：2007-07-09
申请人： Makoto Hiramoto
发明人： Makoto Hiramoto
IPC分类号： H01J37/244 , G01T1/29
CPC分类号： H01J37/265 , B82Y10/00 , B82Y40/00 , H01J37/263 , H01J37/28 , H01J37/304 , H01J37/3174 , H01J2237/221 , H01J2237/2823 , H01J2237/30483
摘要： A charged particle beam apparatus in accordance with one preferred form of this invention includes an irradiation unit for irradiating a charged particle beam, an instrumentation unit which performs instrumentation of a reflection signal from a mark as obtained by scanning the mark while irradiating the charged particle beam onto the mark, and a measurement unit which uses an approximation equation defined by use of a prespecified mark shape function and an error function to perform the fitting of a waveform obtained based on the reflection signal and which measures beam resolution which becomes a parameter of the error function from the waveform obtained based on the reflection signal.
摘要翻译：根据本发明的一个优选形式的带电粒子束装置包括用于照射带电粒子束的照射单元，仪器单元，其从照射带电粒子束的扫描标记获得的标记进行反射信号的检测以及测量单元，其使用通过使用预先指定的标记形状函数和误差函数定义的近似方程来执行基于反射信号获得的波形的拟合，并且测量作为参数的波束分辨率基于反射信号获得的波形的误差函数。

5. 发明申请

US20120068089A1 CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD 有权
标题翻译：充电颗粒光束写字装置和充电颗粒光束写字方法
公开(公告)号：US20120068089A1
公开(公告)日：2012-03-22
申请号：US13235432
申请日：2011-09-18
申请人： Noriaki NAKAYAMADA , Makoto Hiramoto , Jun Yashima
发明人： Noriaki NAKAYAMADA , Makoto Hiramoto , Jun Yashima
IPC分类号： H01J37/147
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/78 , H01J37/3023 , H01J2237/30461 , H01J2237/30483 , H01J2237/31776
摘要： A charged particle beam writing apparatus includes a unit calculating a total charge amount of charged particle beams irradiating each minimum deflection region in deflection regions having different deflection sizes respectively deflected by deflectors of a plurality of levels for deflecting charged particle beams, a unit calculating a representative temperature of the each minimum deflection region based on heat transfer from other minimum deflection regions having been written before the each minimum deflection region is written, a unit inputting a first dose of a shot of each charged particle beam irradiating the each minimum deflection region, and modulating the first dose by using the representative temperature of the each minimum deflection region, and a unit including the deflectors of a plurality of levels and writing a pattern in the each minimum deflection region with a second dose, which has been modulated, by using the deflectors of a plurality of levels.
摘要翻译：一种带电粒子束写入装置，包括一个单元，该单元计算在偏转区域中照射每个最小偏转区域的带电粒子束的总电荷量，该偏转区域具有不同的偏转尺寸，该偏转区域分别由用于偏转带电粒子束的多个级别的偏转器偏转，基于已经写入在每个最小偏转区域之前写入的其它最小偏转区域的热传递的每个最小偏转区域的温度，输入照射每个最小偏转区域的每个带电粒子束的射束的第一剂量的单元，以及通过使用每个最小偏转区域的代表性温度调制第一剂量，以及包括多个级别的偏转器的单元，并且通过使用已调制的第二剂量在每个最小偏转区域中写入图案多个级别的偏转器。

6. 发明申请

US20070243487A1 FORMING METHOD OF RESIST PATTERN AND WRITING METHOD OF CHARGED PARTICLE BEAM 审中-公开
标题翻译：电荷型粒子的形成方法和填充粒子束的写入方法
公开(公告)号：US20070243487A1
公开(公告)日：2007-10-18
申请号：US11734587
申请日：2007-04-12
申请人： Hirohito Anze , Takehiko Katsumata , Shuichi Tamamushi , Takashi Kamikubo , Rieko Nishimura , Makoto Hiramoto , Tomoo Motosugi , Takayuki Ohnishi
发明人： Hirohito Anze , Takehiko Katsumata , Shuichi Tamamushi , Takashi Kamikubo , Rieko Nishimura , Makoto Hiramoto , Tomoo Motosugi , Takayuki Ohnishi
IPC分类号： G03C1/00
CPC分类号： G03F1/78
摘要： The present invention realized the excellent dimensional accuracy of resist patterns by using a chemical amplification type resist whose effective acid diffusion length is shorten without decreasing throughput of a charged particle beam writing system.The resist pattern forming method of the present invention features that the amount of the acid diffusion inhibitor in a chemical amplification type resist in order to shorten the effective acid diffusion length increases and the current density of a charged particle exposure in order to prevent the throughput drop of the writing system increases.The present invention provides a resist pattern forming method comprising a process of coating a chemical amplification type resist on the surface of a processing substrate, a process of exposing patterns by using charged particle beams on the surface of the said substrate, a process of post exposure baking the chemical amplification type resist after the exposure, and a process of developing the said chemical amplification type resist.The said method features that the amount of an acid diffusion inhibitor in the said resist increases and the current density of the charged particle exposure also increases.
摘要翻译：本发明通过使用有效的酸扩散长度缩短而不降低带电粒子束写入系统的通过量的化学放大型抗蚀剂来实现抗蚀剂图案的优异的尺寸精度。本发明的抗蚀剂图案形成方法的特征在于为了缩短有效酸扩散长度，化学放大型抗蚀剂中的酸扩散抑制剂的量增加，并且带电粒子暴露的电流密度为了防止生产量下降的写作系统增加。本发明提供一种抗蚀剂图案形成方法，其包括在处理基板的表面上涂布化学放大型抗蚀剂的方法，通过在所述基板的表面上使用带电粒子束来曝光图案的处理，后曝光在曝光后烘烤化学放大型抗蚀剂，以及显影所述化学放大型抗蚀剂的工艺。所述方法的特征在于所述抗蚀剂中的酸扩散抑制剂的量增加，并且带电粒子暴露的电流密度也增加。

7. 发明授权

US5198184A Reactor containment vessel 失效
标题翻译：反应堆安全壳
公开(公告)号：US5198184A
公开(公告)日：1993-03-30
申请号：US910510
申请日：1992-07-08
申请人： Makoto Hiramoto
发明人： Makoto Hiramoto
IPC分类号： G21C9/004 , G21C13/00 , G21C13/024
CPC分类号： G21C9/004 , Y02E30/40
摘要： A reactor pressure vessel is disposed in a reactor containment vessel and is supported by a pedestal having a cylindrical structure. The inside of the reactor containment vessel is divided into upper and lower drywells by means of a diaphragm floor. A line, a cable and a duct are disposed in and between the upper and lower drywells in the reactor containment vessel. The pedestal comprising a plurality of concrete wall sections and a plurality of connecting vent sections which are arranged alternately along a circumferential direction of the cylindrical pedestal, wherein the line, the cable and the duct are arranged in each of the connecting vent sections and a vent pipe is arranged in each of the concrete sections. A vacuum breaker is further disposed in the reactor containment vessel at a portion above the open end of the vent pipe, the vacuum breaker is connected to a fixing pipe for mounting a vacuum breaker to the pedestal and the fixing pipe has one end opened to the drywell. The vent pipe may have an end portion extended to the diaphragm floor and opened to the drywell and a vacuum breaker is mounted to the extended portion of the vent pipe and connected to a fixing pipe for mounting a vacuum breaker to the pedestal, the fixing pipe having one end opened to an inside of the vent pipe.
摘要翻译：反应堆压力容器设置在反应堆容纳容器中并且由具有圆柱形结构的基座支撑。反应堆安全壳的内部通过隔膜地板分为上，下干井。线路，电缆和管道设置在反应堆容纳容器中的上部和下部干井之间和之间。所述基座包括多个混凝土壁部分和沿着所述圆柱形基座的圆周方向交替布置的多个连接通气部分，其中所述线，所述电缆和所述导管布置在每个所述连接通气部分和通气口管道布置在每个混凝土部分中。真空断路器还在排气管开口端上方的一个部分设置在反应堆容纳容器中，真空断路器连接到固定管，用于将真空断路器安装到基座上，而固定管的一端开放到干井通气管可以具有延伸到隔膜底板并且打开到干井的端部，并且真空断路器安装到通气管的延伸部分并且连接到用于将真空断路器安装到基座的固定管，固定管其一端向通气管的内部敞开。

8. 发明授权

US08563953B2 Charged particle beam writing apparatus and charged particle beam writing method 有权
标题翻译：带电粒子束写入装置和带电粒子束写入方法
公开(公告)号：US08563953B2
公开(公告)日：2013-10-22
申请号：US13235432
申请日：2011-09-18
申请人： Noriaki Nakayamada , Makoto Hiramoto , Jun Yashima
发明人： Noriaki Nakayamada , Makoto Hiramoto , Jun Yashima
IPC分类号： H01J37/147 , H01J19/08
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/78 , H01J37/3023 , H01J2237/30461 , H01J2237/30483 , H01J2237/31776
摘要： A charged particle beam writing apparatus includes a unit calculating a total charge amount of charged particle beams irradiating each minimum deflection region in deflection regions having different deflection sizes respectively deflected by deflectors of a plurality of levels for deflecting charged particle beams, a unit calculating a representative temperature of the each minimum deflection region based on heat transfer from other minimum deflection regions having been written before the each minimum deflection region is written, a unit inputting a first dose of a shot of each charged particle beam irradiating the each minimum deflection region, and modulating the first dose by using the representative temperature of the each minimum deflection region, and a unit including the deflectors of a plurality of levels and writing a pattern in the each minimum deflection region with a second dose, which has been modulated, by using the deflectors of a plurality of levels.
摘要翻译：一种带电粒子束写入装置，包括一个单元，该单元计算在偏转区域中照射每个最小偏转区域的带电粒子束的总电荷量，该偏转区域具有不同的偏转尺寸，该偏转区域分别由用于偏转带电粒子束的多个级别的偏转器偏转，基于已经写入在每个最小偏转区域之前写入的其它最小偏转区域的热传递的每个最小偏转区域的温度，输入照射每个最小偏转区域的每个带电粒子束的射束的第一剂量的单元，以及通过使用每个最小偏转区域的代表性温度调制第一剂量，以及包括多个级别的偏转器的单元，并且通过使用已调制的第二剂量在每个最小偏转区域中写入图案多个级别的偏转器。

9. 发明申请

US20100178611A1 Lithography method of electron beam 审中-公开
标题翻译：电子束光刻法
公开(公告)号：US20100178611A1
公开(公告)日：2010-07-15
申请号：US12659774
申请日：2010-03-22
申请人： Hirohito Anze , Takehiko Katsumata , Shuichi Tamamushi , Takashi Kamikubo , Rieko Nishimura , Makoto Hiramoto , Tomoo Motosugi , Takazuki Ohnishi
发明人： Hirohito Anze , Takehiko Katsumata , Shuichi Tamamushi , Takashi Kamikubo , Rieko Nishimura , Makoto Hiramoto , Tomoo Motosugi , Takazuki Ohnishi
IPC分类号： G03F7/20
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/78 , G03F7/0382 , G03F7/0392 , H01J37/3174
摘要： A charged particle beam writing method on a chemical amplification type resist, comprising: coating said chemical amplification type resist which contains an acid diffusion inhibitor, on a surface of a mask substrate, exposing charged particle beams to said chemical amplification type resist layer on said surface of the mask substrate, baking said chemical amplification type resist layer which said charged particle beams were exposed, and developing said chemical amplification type resist after the baking, wherein an exposure current density of said electron beams exposing ranges of 50˜5000 A/cm2, said photo acid generator is in an amount ranging from 0.1 to 30 weight percent (wt %) relative to all solid content of said chemical amplification type resist, and said acid diffusion inhibitor is composed of at least one material selected from the group consisting of tertiary amine class, benzyl-carbamate class, benzoin-carbamate class, o-carbamoyl-hydroxy-amine class, o-carbamoyl-oxime class, and dithio-calbamate-quaternary ammonium salt.
摘要翻译：一种化学放大型抗蚀剂的带电粒子束写入方法，包括：在掩模基板的表面上涂覆含有酸扩散抑制剂的所述化学放大型抗蚀剂，将带电粒子束暴露于所述表面上的所述化学放大型抗蚀剂层对所述带电粒子束进行曝光的所述化学放大型抗蚀剂层进行烘烤，烘烤后显影所述化学放大型抗蚀剂，其中所述电子束的曝光电流密度为50〜5000A / cm 2，所述光酸产生剂的量相对于所述化学增幅型抗蚀剂的全部固体含量为0.1〜30重量％（重量％），所述酸扩散抑制剂由选自三级胺类，氨基甲酸苄酯类，苯偶姻 - 氨基甲酸酯类，邻氨基甲酰基 - 羟基 - 胺类，邻氨基甲酰基肟屁股和二硫代氨基甲酸铵 - 季铵盐。

10. 发明申请

US20090300913A1 Method for connecting tab pattern and lead wire 有权
标题翻译：连接标签图案和导线的方法
公开(公告)号：US20090300913A1
公开(公告)日：2009-12-10
申请号：US12454967
申请日：2009-05-27
申请人： Eiji Misaizu , Makoto Hiramoto
发明人： Eiji Misaizu , Makoto Hiramoto
IPC分类号： H05K3/20
CPC分类号： H05K3/3405 , G01L1/2287 , H05K1/118 , H05K2201/09381 , H05K2201/09427 , H05K2201/10287 , H05K2201/1034 , Y10T29/49007 , Y10T29/49117 , Y10T29/49147 , Y10T29/49155 , Y10T29/49156
摘要： A method is for connecting a tab pattern formed on a base sheet and a lead wire, wherein the tab pattern includes: a tab main portion; and a connecting portion formed to continue from one edge line of the tab main portion and to extend from the tab main portion along an extension line that is substantially orthogonal to the edge line, and wherein the method includes: connecting the lead wire on the tab main portion by bonding the lead wire at a position being displaced from the extension line of the connecting portion for more than a given offset amount where the extension line is identical to a center line of the connecting portion, the position being within a given distance from the edge line of the tab main portion.
摘要翻译：一种用于连接形成在基片和引线上的突片图案的方法，其中突片图案包括：突片主体部分; 以及连接部，其形成为从所述突片主体的一个边缘线延伸并且从所述突片主体部分沿着与所述边缘线大致正交的延伸线延伸，并且其中所述方法包括：将所述引线连接到所述突片主要部分通过将引线接合在从连接部分的延伸线偏移超过给定偏移量的位置处，其中延伸线与连接部分的中心线相同，该位置在距离突片主体部分的边缘线。

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