专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4228455A Gallium phosphide semiconductor device having improved electrodes 失效
标题翻译：具有改进电极的磷化镓半导体器件
公开(公告)号：US4228455A
公开(公告)日：1980-10-14
申请号：US937786
申请日：1978-08-29
申请人： Nobuaki Yasuda , Takenobu Ogawa , Tetsuo Sadamasa
发明人： Nobuaki Yasuda , Takenobu Ogawa , Tetsuo Sadamasa
IPC分类号： H01L21/28 , H01L21/285 , H01L29/45 , H01L33/30 , H01L33/40 , H01L23/48 , H01L29/46 , H01L29/62
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/452 , H01L2924/0002 , H01L33/30 , H01L33/38
摘要： A gallium phosphide semiconductor device comprising an N type gallium phosphide monocrystal, a semiconductor layer formed in or on the monocrystal, and a pair of electrodes formed on the monocrystal and on the semiconductor layer. The electrode on the monocrystal is made of a gold-germanium alloy having a predetermined germanium content.
摘要翻译：一种磷化镓半导体器件，包括N型磷化镓单晶，在单晶中或其上形成的半导体层，以及形成在单晶和半导体层上的一对电极。单晶上的电极由具有预定锗含量的金 - 锗合金制成。

2. 发明授权

US5084410A Method of manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5084410A
公开(公告)日：1992-01-28
申请号：US257519
申请日：1988-10-14
申请人： Kazuhiro Eguchi , Tetsuo Sadamasa , Hideto Furuyama , Yuzo Hirayama
发明人： Kazuhiro Eguchi , Tetsuo Sadamasa , Hideto Furuyama , Yuzo Hirayama
IPC分类号： H01L21/20 , H01L29/04 , H01L29/10 , H01L31/105 , H01L33/00 , H01S5/22 , H01S5/227 , H01S5/32 , H01S5/323
CPC分类号： H01L21/02639 , H01L21/02392 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L29/045 , H01L29/1029 , H01L31/105 , H01L33/0062 , H01S5/2203 , H01S5/227 , H01S5/2201 , H01S5/3202 , H01S5/32391 , Y10S438/973
摘要： A semiconductor device which comprises a semiconductor substrate having a surface orientation substantially in a {100}-orientation is provided. On the semiconductor substrate, plural steps formed in a direction deviated substantially from a -direction by 5 degrees or more are formed. The steps, which are mesa and concave portions, are buried by plural semiconductor crystal layers grown by the use of MOCVD or the like. A method of manufacturing such a device is also provided.

3. 发明授权

US4625223A Double heterostructure light-emitting semiconductor device 失效
标题翻译：双异质结发光半导体器件
公开(公告)号：US4625223A
公开(公告)日：1986-11-25
申请号：US701513
申请日：1985-02-14
申请人： Tadashi Komatsubara , Tetsuo Sadamasa
发明人： Tadashi Komatsubara , Tetsuo Sadamasa
IPC分类号： H01L33/14 , H01L33/30 , H01L33/40 , H01L33/00
CPC分类号： H01L33/145
摘要： A double heterostructure light-emitting semi-conductor device includes a p-GaAs substrate having a first electrode formed on one surface and a current confining layer on the other surface; a confined current conduction layer; and a light-emitting layer structure formed on the current confining layer and the confined current conduction layer. A capping layer of GaAs having a second electrode is formed on the light-emitting layer structure. A light exit window layer for exiting the emitted light is constructed by a thin film of the capping layer.
摘要翻译：双异质结型发光半导体器件包括具有在一个表面上形成的第一电极和另一个表面上的电流限制层的p-GaAs衬底; 限流导电层; 以及形成在电流限制层和限制电流传导层上的发光层结构。在发光层结构上形成具有第二电极的GaAs覆盖层。用于离开发射光的光出射窗层由覆盖层的薄膜构成。

4. 发明授权

US4145707A Semiconductor luminescent display apparatus 失效
标题翻译：半导体发光显示装置
公开(公告)号：US4145707A
公开(公告)日：1979-03-20
申请号：US803984
申请日：1977-06-06
申请人： Tetsuo Sadamasa , Makoto Naito , Tadao Nakamura
发明人： Tetsuo Sadamasa , Makoto Naito , Tadao Nakamura
IPC分类号： H01L27/15 , H01L33/38 , H01L23/48 , H01L29/44 , H01L29/52
CPC分类号： H01L33/38 , H01L27/156 , H01L2224/48091
摘要： A semiconductor luminescent display apparatus includes a plurality of semiconductor luminescent devices arranged in a row on a header. The device includes a luminescent segments arranged in a letter of eight and electrodes each having a contact surface in contact with one end side of the luminescent surface of the segments in the longitudinal direction thereof.
摘要翻译：半导体发光显示装置包括在集管上排成行的多个半导体发光装置。该装置包括以八字形排列的发光片和各个具有接触表面的电极，每个接触表面沿其纵向方向与片段的发光表面的一端接触。

5. 发明授权

US5253262A Semiconductor laser device with multi-directional reflector arranged therein 失效
标题翻译：其中布置有多向反射器的半导体激光器件
公开(公告)号：US5253262A
公开(公告)日：1993-10-12
申请号：US784711
申请日：1991-10-30
申请人： Atsushi Kurobe , Tsutomu Tezuka , Tetsuo Sadamasa , Mitsuhiro Kushibe , Yoshito Kawakyu
发明人： Atsushi Kurobe , Tsutomu Tezuka , Tetsuo Sadamasa , Mitsuhiro Kushibe , Yoshito Kawakyu
IPC分类号： H01S5/10 , H01S5/12 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/40 , H01S3/19
CPC分类号： H01S5/18327 , B82Y20/00 , H01S5/18388 , H01S5/227 , H01S2301/18 , H01S5/1042 , H01S5/1071 , H01S5/1078 , H01S5/1082 , H01S5/1228 , H01S5/18305 , H01S5/18308 , H01S5/18319 , H01S5/1835 , H01S5/18352 , H01S5/2004 , H01S5/2027 , H01S5/2205 , H01S5/2275 , H01S5/32308 , H01S5/34313 , H01S5/4056
摘要： A microcavity semiconductor laser disclosed therein includes a double-heterostructure section including an intermediate active layer sandwiched between a first or lower cladding layer and a second or upper cladding layer above a semiconductive substrate. A first multi-layered reflector section is arranged between the substrate and the double-heterostructure section to have its reflectance which becomes maximum near the oscillation wavelength of the laser. The upper cladding layer is semi-spherically formed. A three-dimensional optical reflector covers the double-heterostructure section, for controlling spontaneous emission obtained in the double-heterostructure section along various directions, and for increasing the coupling ratio of spontaneous emission with a specific laser mode, thereby to decrease the threshold current.
摘要翻译：其中公开的微腔半导体激光器包括双异质结构部分，其包括夹在第一或下包层之间的中间有源层和半导体衬底之上的第二或上覆层。第一多层反射器部分布置在基板和双异质结构部分之间，使其反射率在激光器的振荡波长附近变得最大。上覆层是半球形的。三维光反射器覆盖双异质结构部分，用于控制沿着各个方向的双异质结构部分中获得的自发辐射，并且用于增加具有特定激光模式的自发发射的耦合比，从而降低阈值电流。

6. 发明授权

US4647927A Display device 失效
标题翻译：显示设备
公开(公告)号：US4647927A
公开(公告)日：1987-03-03
申请号：US808376
申请日：1985-12-16
申请人： Osamu Ichikawa , Tetsuo Sadamasa
发明人： Osamu Ichikawa , Tetsuo Sadamasa
IPC分类号： G06F3/147 , G09G3/20 , G09G3/32 , G09G3/00
CPC分类号： G09G3/20 , G09G3/32 , G09G2360/18 , G09G2370/08
摘要： A display device having a display array of m.times.n display elements driven by a static shift register having m.times.n stages respectively corresponding to row and column designations of the display elements. The column lines of the display element array are driven by a first output of the m stages. At the same time, pixel data are supplied to the shift register in accordance with a binary level of an externally supplied select signal. Alternatively, the shift register is shifted in a recursive manner. The row lines of the display element array are scanned in accordance with a count of a clock signal. Select signal lines and clock signal lines are respectively aligned along the row and column directions of a unit panel when plural display arrays as described above are arranged in a matrix form to provide a large-screen display unit. The lines of each display array are sequentially driven in accordance with the supply pattern of the select and clock signals from a corresponding unit driver. The shift register arrangement decreases the number of connections or wirings between a module driver and the display element array and simplifies the circuit arrangement of the module driver.
摘要翻译：一种显示装置，具有由静态移位寄存器驱动的m×n个显示元件的显示阵列，所述静态移位寄存器具有分别对应于显示元件的行和列名称的m×n个阶段。显示元件阵列的列线由m级的第一输出驱动。同时，根据外部提供的选择信号的二进制电平将像素数据提供给移位寄存器。或者，移位寄存器以递归方式移位。根据时钟信号的计数来扫描显示元件阵列的行线。当如上所述的多个显示阵列以矩阵形式布置以提供大屏幕显示单元时，选择信号线和时钟信号线沿着单元面板的行和列方向分别对齐。根据来自相应单元驱动器的选择和时钟信号的供给模式，依次驱动每个显示阵列的线。移位寄存器布置减少了模块驱动器和显示元件阵列之间的连接或布线的数量，并且简化了模块驱动器的电路布置。

7. 发明授权

US4432131A Method for manufacturing display device 失效
标题翻译：显示装置制造方法
公开(公告)号：US4432131A
公开(公告)日：1984-02-21
申请号：US414897
申请日：1982-09-03
申请人： Tetsuo Sadamasa , Osamu Ichikawa
发明人： Tetsuo Sadamasa , Osamu Ichikawa
IPC分类号： G09F9/33 , H01L21/56 , H01L25/075 , H01L33/30 , H01L33/56 , H01L33/62 , H01L33/00
CPC分类号： H01L25/0753 , G09F9/33 , H01L21/56 , H01L24/45 , H01L2224/45144 , H01L2224/48091 , H01L2924/00011 , H01L2924/00014 , H01L2924/01012 , H01L2924/01015 , H01L2924/01047 , H01L2924/01079 , H01L2924/12041 , H01L2924/15787 , H01L2924/181 , H01L33/52
摘要： In a method for manufacturing a display, a substrate having a surface on which a plurality of light-emitting diodes are aligned is disposed such that the surface opposes a surface of a table. A resin of a light-emitting and electrically insulating material which is kept in a fluid state is filled by capillarity into a space defined by the surface of the substrate and the surface of the table. The resin is then hardened, and the table is removed from a hardened resin. A display is obtained wherein at least the space between the adjacent LEDs is filled with the hardened resin.
摘要翻译：在制造显示器的方法中，将具有多个发光二极管对准的表面的基板设置成使得该表面与工作台的表面相对。保持在流体状态的发光和电绝缘材料的树脂由毛细管填充到由基板的表面和工作台的表面限定的空间中。然后将树脂硬化，并将桌子从硬化树脂上除去。获得显示器，其中至少相邻LED之间的空间用硬化树脂填充。

8. 发明授权

US4322735A Display device 失效
标题翻译：显示设备
公开(公告)号：US4322735A
公开(公告)日：1982-03-30
申请号：US146790
申请日：1980-05-05
申请人： Tetsuo Sadamasa , Osamu Ichikawa
发明人： Tetsuo Sadamasa , Osamu Ichikawa
IPC分类号： G09F9/33 , H01L21/205 , H01L25/075 , H01L33/00
CPC分类号： H01L25/0753 , G09F9/33 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48472 , H01L2924/09701
摘要： A display device has a relatively large insulation substrate on which a metal layer is formed. On the metal layer on the insulation substrate, there are at least one pair of ceramic unit substrates which are disposed in close vicinity to each other, respectively having thereon metal layers bearing light emitting diodes. The metal layer on the insulation substrate is connected with the metal layers on the unit substrates at its end portions by means of, e.g., flexible lead frames.
摘要翻译：显示装置具有形成有金属层的相对大的绝缘基板。在绝缘基板上的金属层上，至少有一对陶瓷单元基板彼此靠近配置，分别具有带有发光二极管的金属层。绝缘基板上的金属层通过例如柔性引线框架在其端部与单元基板上的金属层连接。

9. 发明授权

US3951699A Method of manufacturing a gallium phosphide red-emitting device 失效
标题翻译：制造磷化镓红发射器件的方法
公开(公告)号：US3951699A
公开(公告)日：1976-04-20
申请号：US440020
申请日：1974-02-06
申请人： Makoto Naito , Akinobu Kasami , Masaru Kawachi , Tetsuo Sadamasa , Hiroki Mineo
发明人： Makoto Naito , Akinobu Kasami , Masaru Kawachi , Tetsuo Sadamasa , Hiroki Mineo
IPC分类号： H01L33/00 , H01L7/00
CPC分类号： H01L33/00
摘要： A method of manufacturing a gallium phosphide (GaP) red-emitting device by forming at least one n-type GaP layer on an n-type GaP substrate by the liquid phase epitaxial growth process and further depositing a p-type GaP layer on said n-type GaP layer, thereby providing a p-n junction contributing to emission of light, characterized in that the method comprises reducing the surface donor concentration of the n-type GaP layer to below 1 .times. 10.sup.18 cm.sup.-.sup.3 ; and epitaxially growing at least the light emitting region of the p-type GaP layer by cooling a solution for epitaxial growth of said p-type GaP layer at a slower rate than 5.degree.C per minute.
摘要翻译：一种通过液相外延生长工艺在n型GaP衬底上形成至少一个n型GaP层并进一步在所述n型GaP衬底上沉积p型GaP层来制造磷化镓（GaP）红色发光器件的方法型GaP层，从而提供有助于光发射的pn结，其特征在于该方法包括将n型GaP层的表面施主浓度降低至低于1×1018cm -3; 并且通过以比每分钟5℃更慢的速度冷却所述p型GaP层的外延生长的溶液，至少外延生长p型GaP层的发光区域。

10. 发明授权

US5144381A Semiconductor light detector utilizing an avalanche effect and having an improved guard ring structure 失效
标题翻译：利用雪崩效应并具有改进的保护环结构的半导体光检测器
公开(公告)号：US5144381A
公开(公告)日：1992-09-01
申请号：US602174
申请日：1990-10-23
申请人： Hideto Furuyama , Tetsuo Sadamasa
发明人： Hideto Furuyama , Tetsuo Sadamasa
IPC分类号： H01L21/20 , H01L31/107 , H01L31/18
CPC分类号： H01L31/1844 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02639 , H01L31/1075 , H01L31/184 , Y02E10/544
摘要： A semiconductor light detector includes a first semiconductor layer of a first conductivity type having a multi-layer structure including a light absorbing layer and an avalanche multiplicating layer, an annular second semiconductor layer formed on the first semiconductor layer, a light detecting region formed by doping an impurity of a second conductivity type in a surface region of the first semiconductor layer, in such a manner that a peripheral portion of the light detecting region is located outside an inner periphery of the second semiconductor layer, the light detecting region defining a first p-n junction in combination with the first semiconductor layer, and a guard ring formed by doping an impurity of the second conductivity type in a surface region of the second semiconductor layer to surround the peripheral portion of the light receiving region with the first semiconductor layer, the second p-n junction having a concentration gradient lower than that of the first p-n junction. By virtue of the presence of the second semiconductor layer, the junction depth of the peripheral portion of the light detecting region is less than that of the central portion of the light detecting region, and the junction depth of the guard ring is greater than that of the peripheral portion of the light detecting region. As a result, a sufficient guard ring effect can be obtained without a guard ring having a great junction depth.
摘要翻译：半导体光检测器包括具有包括光吸收层和雪崩乘法层的多层结构的第一导电类型的第一半导体层，形成在第一半导体层上的环形第二半导体层，通过掺杂形成的光检测区域在第一半导体层的表面区域中以第二导电类型的杂质，使得光检测区域的周边部位于第二半导体层的内周的外侧，光检测区域限定第一pn 结合第一半导体层的保护环和通过在第二半导体层的表面区域掺杂第二导电类型的杂质以通过第一半导体层围绕光接收区域的周边部分而形成的保护环，第二 pn结的浓度梯度低于第一pn结的浓度梯度上。由于第二半导体层的存在，光检测区域的周边部分的结深度小于光检测区域的中心部分的结深度，并且保护环的结深度大于光检测区域的周边部分。结果，在没有具有大的结深度的保护环的情况下，可以获得足够的保护环效应。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式