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1. 发明专利

JP2006212206A Sterilization member for shoes 有权
标题翻译：鞋子灭菌器
公开(公告)号：JP2006212206A
公开(公告)日：2006-08-17
申请号：JP2005027971
申请日：2005-02-03
申请人： Tsutomu Tezuka , 勉手塚
发明人： TEZUKA TSUTOMU
IPC分类号： A43B17/00 , A61L2/10 , A61L2/26
CPC分类号： A61L2/10 , A61L2/26 , A61L2202/26
摘要： PROBLEM TO BE SOLVED: To provide a sterilization member for shoes, which has a simple structure capable of being easily used and exhibiting an excellent sterilization effect and a deodorizing effect. SOLUTION: The sterilization member 10 for shoes consist of a plate 12 and a base 16. The plate 12 has a shape (an oval shape, a rounded rectangle) of a track for athletic sports, which is obtained by connecting semicircles to both ends of the short sides of a rectangular shape and is integrally molded of a material having high reflecting ratio against UV and IR. The base 16 integrally molded of a polyurethane material in a rectangular shape are secured to the lower face 12b of the plate 12. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有能够容易地使用并具有优异的灭菌效果和除臭效果的结构简单的鞋用灭菌构件。解决方案：鞋用杀菌构件10由板12和基座16组成。板12具有用于运动运动的轨道的形状（椭圆形，圆角矩形），其通过将半圆连接到短边的两端为矩形，并且由具有高反射率的材料与UV和IR整体模制而成。由矩形形状的聚氨酯材料整体模制的底座16固定到板12的下表面12b上。（C）2006年，JPO＆NCIPI

2. 发明专利

JP2007044179A Sterilizing member for shoes 有权
标题翻译：灭菌鞋子会员
公开(公告)号：JP2007044179A
公开(公告)日：2007-02-22
申请号：JP2005230494
申请日：2005-08-09
申请人： Tsutomu Tezuka , 勉手塚
发明人： TEZUKA TSUTOMU
IPC分类号： A61L2/10
摘要： PROBLEM TO BE SOLVED: To provide a sterilizing member for shoes which can easily be used while having a simple structure, and has high sterilizing effects or deodorizing effects. SOLUTION: The sterilizing member 10 regarding the configuration for the performance is constituted of a plate 11 and a base 16. The plate 11 is constituted of a plastic board 12, and scattered reflection surfaces (film layers) 12a and 12b. In this case, the plastic board 12 is formed into the shape of a field track (an oval shape, or a rounded rectangle) for which a semi-circular shape is joined to both ends of a shorter edge of the rectangle of a plastic material. The scattered reflection surfaces 12a and 12b are formed in such a manner that a metal material having a high reflectance to ultraviolet rays and infrared rays is vacuum-deposited on the plastic board 12. The base 16 which is integrally molded into a rectangular parallelepiped shape of a sponge material is attached to the lower surface of the plate 11. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种易于使用的鞋子的消毒部件，其结构简单，并且具有高消毒效果或除臭效果。解决方案：关于性能结构的杀菌部件10由板11和基座16构成。板11由塑料基板12和散射反射面（膜层）12a，12b构成。在这种情况下，塑料板12形成为在圆形长方形的短边缘的两端连接有半圆形的田间轨道（椭圆形或圆形矩形）的形状。散射反射面12a，12b以对紫外线和红外线具有高反射率的金属材料真空沉积在塑料基板12上的方式形成。基底16整体模制成长方体形状海绵材料附着在板11的下表面上。版权所有（C）2007，JPO＆INPIT

3. 发明授权

US08778766B2 Field effect transistor, integrated circuit element, and method for manufacturing the same 有权
标题翻译：场效应晶体管，集成电路元件及其制造方法
公开(公告)号：US08778766B2
公开(公告)日：2014-07-15
申请号：US13615699
申请日：2012-09-14
申请人： Tsutomu Tezuka , Toshifumi Irisawa
发明人： Tsutomu Tezuka , Toshifumi Irisawa
IPC分类号： H01L21/336
CPC分类号： H01L21/823807 , H01L21/823821 , H01L21/823828 , H01L27/092 , H01L27/0924 , H01L29/1054 , H01L29/42392 , H01L29/66818 , H01L29/785 , H01L29/7854 , H01L29/78696
摘要： A field effect transistor of an embodiment of the present invention includes, a semiconductor substrate containing Si atoms; a protruding structure formed on the semiconductor substrate; a channel region formed in the protruding structure and containing Ge atoms; an under channel region formed under the channel region in the protruding structure and containing Si and Ge atoms, the Ge composition ratio among Si and Ge atoms contained in the under channel region continuously changing from the channel region side to the semiconductor substrate side; a gate insulating film formed on the channel region; and a gate electrode formed on the gate insulating film on the channel region.
摘要翻译：本发明实施例的场效应晶体管包括含有Si原子的半导体衬底; 形成在所述半导体基板上的突出结构; 在所述突出结构中形成并含有Ge原子的沟道区; 下部沟道区域形成在突出结构中的沟道区下方并含有Si和Ge原子，下部沟道区中包含的Si和Ge原子之间的Ge组成比从沟道区域侧连续变化到半导体衬底侧; 形成在沟道区上的栅极绝缘膜; 以及形成在沟道区上的栅极绝缘膜上的栅电极。

4. 发明授权

US08394690B2 Semiconductor device and fabrication method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08394690B2
公开(公告)日：2013-03-12
申请号：US13546222
申请日：2012-07-11
申请人： Keiji Ikeda , Tsutomu Tezuka , Yoshihiko Moriyama
发明人： Keiji Ikeda , Tsutomu Tezuka , Yoshihiko Moriyama
IPC分类号： H01L21/336
CPC分类号： H01L29/7853 , H01L29/045 , H01L29/66795
摘要： According to one embodiment, a semiconductor device having a Ge- or SiGe-fin structure includes a convex-shaped active area formed along one direction on the surface region of a Si substrate, a buffer layer of Si1-xGex (0
摘要翻译：根据一个实施例，具有Ge或SiGe鳍结构的半导体器件包括在Si衬底的表面区域上沿着一个方向形成的凸形有源区，Si1-xGex的缓冲层（0

5. 发明授权

US08389347B2 Field effect transistor and method for manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US08389347B2
公开(公告)日：2013-03-05
申请号：US13064229
申请日：2011-03-11
申请人： Tsutomu Tezuka , Eiji Toyoda
发明人： Tsutomu Tezuka , Eiji Toyoda
IPC分类号： H01L21/00
CPC分类号： H01L29/7842 , H01L27/1203 , H01L27/1207 , H01L27/1211 , H01L29/0673 , H01L29/42392 , H01L29/66795 , H01L29/66818 , H01L29/785 , H01L29/78696
摘要： A method for manufacturing a field effect transistor, includes: forming a mask of an insulating film on a semiconductor layer containing Si formed on a semiconductor substrate; forming the semiconductor layer into a mesa structure by performing etching with the use of the mask, the mesa structure extending in a direction parallel to an upper face of the semiconductor substrate; narrowing a distance between two sidewalls of the mesa structure and flattening the sidewalls by performing a heat treatment in a hydrogen atmosphere, the two sidewalls extending in the direction and facing each other; forming a gate insulating film covering the mesa structure having the sidewalls flattened; forming a gate electrode covering the gate insulating film; and forming source and drain regions at portions of the mesa structure, the portions being located on two sides of the gate electrode.
摘要翻译：一种场效应晶体管的制造方法，包括：在半导体衬底上形成的含有Si的半导体层上形成绝缘膜的掩模; 通过使用所述掩模进行蚀刻，将所述半导体层形成为台面结构，所述台面结构在与所述半导体基板的上表面平行的方向上延伸; 缩小台面结构的两个侧壁之间的距离，并通过在氢气氛中进行热处理使两侧壁平坦化，两个侧壁在该方向上相互延伸并面对彼此; 形成覆盖所述侧壁平坦化的所述台面结构的栅极绝缘膜; 形成覆盖所述栅极绝缘膜的栅电极; 以及在所述台面结构的部分处形成源极和漏极区域，所述部分位于所述栅电极的两侧。

6. 发明授权

US08242568B2 Semiconductor device and fabrication method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08242568B2
公开(公告)日：2012-08-14
申请号：US12888674
申请日：2010-09-23
申请人： Keiji Ikeda , Tsutomu Tezuka , Yoshihiko Moriyama
发明人： Keiji Ikeda , Tsutomu Tezuka , Yoshihiko Moriyama
IPC分类号： H01L29/76
CPC分类号： H01L29/7853 , H01L29/045 , H01L29/66795
摘要： According to one embodiment, a semiconductor device having a Ge- or SiGe-fin structure includes a convex-shaped active area formed along one direction on the surface region of a Si substrate, a buffer layer of Si1-xGex (0
摘要翻译：根据一个实施例，具有Ge或SiGe鳍结构的半导体器件包括在Si衬底的表面区域上沿着一个方向形成的凸形有源区，Si1-xGex的缓冲层（0

7. 发明授权

US07985634B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07985634B2
公开(公告)日：2011-07-26
申请号：US12656411
申请日：2010-01-28
申请人： Tsutomu Tezuka
发明人： Tsutomu Tezuka
IPC分类号： H01L21/324
CPC分类号： H01L27/1203 , H01L21/823807 , H01L21/823878 , H01L21/84 , H01L27/0922
摘要： A semiconductor device includes a Si substrate, an insulating film formed on one part of the Si substrate, a bulk Si region grown on other part of the Si substrate other than the insulating film, Si1-xGex(0
摘要翻译：半导体器件包括Si衬底，形成在Si衬底的一部分上的绝缘膜，在除了绝缘膜之外的Si衬底的其它部分上生长的体积Si区，Si1-xGex（0

8. 发明申请

US20100136752A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100136752A1
公开(公告)日：2010-06-03
申请号：US12656411
申请日：2010-01-28
申请人： Tsutomu Tezuka
发明人： Tsutomu Tezuka
IPC分类号： H01L21/336
CPC分类号： H01L27/1203 , H01L21/823807 , H01L21/823878 , H01L21/84 , H01L27/0922
摘要： A semiconductor device includes a Si substrate, an insulating film formed on one part of the Si substrate, a bulk Si region grown on other part of the Si substrate other than the insulating film, Si1-xGex (0
摘要翻译：半导体器件包括Si衬底，形成在Si衬底的一部分上的绝缘膜，在除了绝缘膜之外的Si衬底的其它部分上生长的体积Si区，Si1-xGex（0

9. 发明授权

US07728324B2 Field effect transistor, integrated circuit element, and method for manufacturing the same 有权
标题翻译：场效应晶体管，集成电路元件及其制造方法
公开(公告)号：US07728324B2
公开(公告)日：2010-06-01
申请号：US11725469
申请日：2007-03-20
申请人： Tsutomu Tezuka , Toshifumi Irisawa
发明人： Tsutomu Tezuka , Toshifumi Irisawa
IPC分类号： H01L29/06
CPC分类号： H01L21/823807 , H01L21/823821 , H01L21/823828 , H01L27/092 , H01L27/0924 , H01L29/1054 , H01L29/42392 , H01L29/66818 , H01L29/785 , H01L29/7854 , H01L29/78696
摘要： A field effect transistor of an embodiment of the present invention includes, a semiconductor substrate containing Si atoms; a protruding structure formed on the semiconductor substrate; a channel region formed in the protruding structure and containing Ge atoms; an under channel region formed under the channel region in the protruding structure and containing Si and Ge atoms, the Ge composition ratio among Si and Ge atoms contained in the under channel region continuously changing from the channel region side to the semiconductor substrate side; a gate insulating film formed on the channel region; and a gate electrode formed on the gate insulating film on the channel region.
摘要翻译：本发明实施例的场效应晶体管包括含有Si原子的半导体衬底; 形成在所述半导体基板上的突出结构; 在所述突出结构中形成并含有Ge原子的沟道区; 下部沟道区域形成在突出结构中的沟道区下方并含有Si和Ge原子，下部沟道区中包含的Si和Ge原子之间的Ge组成比从沟道区域侧连续变化到半导体衬底侧; 形成在沟道区上的栅极绝缘膜; 以及形成在沟道区上的栅极绝缘膜上的栅电极。

10. 发明授权

US07009200B2 Field effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US07009200B2
公开(公告)日：2006-03-07
申请号：US10609650
申请日：2003-07-01
申请人： Tsutomu Tezuka , Shinichi Takagi , Tomohisa Mizuno
发明人： Tsutomu Tezuka , Shinichi Takagi , Tomohisa Mizuno
IPC分类号： H01L29/06
CPC分类号： H01L21/2807 , H01L29/1054 , H01L29/4236 , H01L29/665 , H01L29/66613 , H01L29/7834
摘要： A field effect transistor comprises a source and a drain, and a channel layer of Si1-x-yGexCy crystal (1>x>0, 1>y≧0). Ge composition increases toward a drain end, in a vicinity of a source end of the channel layer.
摘要翻译：场效应晶体管包括源极和漏极，以及Si 1-xy Ge x C y晶体（1 x）的沟道层 > 0，1> y> = 0）。 Ge组分在沟道层的源极端附近向漏极端增加。

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