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1. 发明授权

US5956608A Modulating surface morphology of barrier layers 失效
标题翻译：调制阻挡层的表面形态
公开(公告)号：US5956608A
公开(公告)日：1999-09-21
申请号：US667842
申请日：1996-06-20
申请人： Nitin Khurana , Ted Guo
发明人： Nitin Khurana , Ted Guo
IPC分类号： H01L21/768 , H01L21/28 , H01L21/306
CPC分类号： H01L21/76865 , H01L21/76843 , H01L21/76856 , H01L21/76862 , Y10S438/906
摘要： A process for fabricating electronic devices which includes the steps of providing a structure that includes a substrate with an overlying dielectric layer having one or more contact holes and/or vias formed therein; depositing a barrier layer over the structure so that the barrier layer penetrates into the contact holes and/or vias; plasma etching the deposited barrier layer so as to modify its surface morphology; and after modifying the surface morphology of the deposited barrier layer, depositing a metalization layer over the barrier layer. A two-step preclean to facet upper corners of the holes and/or vias and to clean bottoms of the holes and/or vias is performed prior to the deposition of the barrier layer.
摘要翻译：一种用于制造电子器件的方法，包括以下步骤：提供包括具有其中形成有一个或多个接触孔和/或通孔的上覆电介质层的衬底的结构; 在结构上沉积阻挡层，使得阻挡层渗透到接触孔和/或通孔中; 等离子体蚀刻沉积的阻挡层以改变其表面形态; 并且在改变沉积的阻挡层的表面形态之后，在阻挡层上沉积金属化层。在沉积阻挡层之前，先进行将两个孔和/或通孔的上角分开并清洁孔和/或通孔的底部的两步预清洗。

2. 发明授权

US07824743B2 Deposition processes for titanium nitride barrier and aluminum 失效
标题翻译：氮化钛屏障和铝的沉积工艺
公开(公告)号：US07824743B2
公开(公告)日：2010-11-02
申请号：US11864100
申请日：2007-09-28
申请人： Wei Ti Lee , Yen-Chih Wang , Mohd Fadzli Anwar Hassan , Ryeun Kwan Kim , Hyung Chul Park , Ted Guo , Alan A. Ritchie
发明人： Wei Ti Lee , Yen-Chih Wang , Mohd Fadzli Anwar Hassan , Ryeun Kwan Kim , Hyung Chul Park , Ted Guo , Alan A. Ritchie
IPC分类号： B05D5/12 , H01L21/04 , H01L21/203 , H05H1/24
CPC分类号： H01J37/34 , C23C14/0036 , C23C14/0089 , C23C14/0641 , H01J37/32449 , H01J37/32706 , H01L21/2855 , H01L21/28556 , H01L21/32051 , H01L21/76831 , H01L21/76843 , H01L21/76876 , H01L21/76879 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： Embodiments described herein provide a method for forming two titanium nitride materials by different PVD processes, such that a metallic titanium nitride layer is initially formed by a PVD process in a metallic mode and a titanium nitride retarding layer is formed over a portion of the metallic titanium nitride layer by a PVD process in a poison mode. Subsequently, a first aluminum layer, such as an aluminum seed layer, may be selectively deposited on exposed portions of the metallic titanium nitride layer by a CVD process. Thereafter, a second aluminum layer, such as an aluminum bulk layer, may be deposited on exposed portions of the first aluminum layer and the titanium nitride retarding layer during an aluminum PVD process.
摘要翻译：本文所述的实施例提供了通过不同PVD工艺形成两种氮化钛材料的方法，使得最初通过金属模式的PVD工艺形成金属氮化钛层，并且在金属钛的一部分上形成氮化钛延迟层氮化物层通过PVD工艺处于毒液模式。随后，通过CVD工艺可以在金属氮化钛层的暴露部分上选择性地沉积第一铝层，例如铝籽晶层。此后，在铝PVD工艺期间，可以在第一铝层和氮化钛延迟层的暴露部分上沉积第二铝层，例如铝本体层。

3. 发明申请

US20060144703A1 Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry 有权
标题翻译：多轨磁控管具有更均匀的沉积和减小的旋转不对称性
公开(公告)号：US20060144703A1
公开(公告)日：2006-07-06
申请号：US11029641
申请日：2005-01-05
申请人： Hong Yang , Tza-Jing Gung , Jian-Xin Lei , Ted Guo
发明人： Hong Yang , Tza-Jing Gung , Jian-Xin Lei , Ted Guo
IPC分类号： C23C14/00
CPC分类号： H01J37/3408 , H01J37/3405
摘要： A multi-track magnetron having a convolute shape and asymmetric about the target center about which it rotates. A plasma track is formed as a closed loop between opposed inner and outer magnetic poles, preferably as two or three radially arranged and spirally shaped counter-propagating tracks with respect to the target center and preferably passing over the rotation axis. The pole shape may be optimized to produce a cumulative track length distribution conforming to the function L=arn. After several iterations of computerized optimization, the pole shape may be tested for sputtering uniformity with different distributions of magnets in the fabricated pole pieces. If the uniformity remains unsatisfactory, the design iteration is repeated with a different n value, different number of tracks, or different pole widths. The optimization reduces azimuthal sidewall asymmetry and improves radial deposition uniformity.
摘要翻译：具有卷绕形状且围绕其旋转的目标中心不对称的多轨磁控管。等离子体轨道形成为相对的内部和外部磁极之间的闭合回路，优选地相对于目标中心并且优选地通过旋转轴线而形成为两个或三个径向布置且螺旋形的反向传播轨迹。极点形状可以被优化以产生符合函数L = ar 的累积轨迹长度分布。经过数次迭代的计算机化优化，可以测试极点形状，使其在制造的极片中具有不同的磁体分布的溅射均匀性。如果均匀性不能令人满意，则使用不同的n值，不同数量的轨道或不同的极宽重复设计迭代。优化可减少方位角侧壁不对称性，提高径向沉积均匀性。

4. 发明授权

US06605531B1 Hole-filling technique using CVD aluminum and PVD aluminum integration 失效
标题翻译：使用CVD铝和PVD铝整合的填孔技术
公开(公告)号：US06605531B1
公开(公告)日：2003-08-12
申请号：US09127010
申请日：1998-07-31
申请人： Ted Guo , Wei Shi , Liang-Yuh Chen
发明人： Ted Guo , Wei Shi , Liang-Yuh Chen
IPC分类号： H01L214763
CPC分类号： H01L21/2855 , H01L21/28556 , H01L21/76882
摘要： The present invention provides a method for filling an aperture on a substrate by depositing a metal film on the substrate of insufficient thickness to fill the sub half-micron aperture and then annealing the substrate in a low pressure chamber at a temperature below a melting point of the deposited metal film. The present invention further provides forming a planarized film over the void-free aperture by physical vapor depositing a metal film over the annealed film.
摘要翻译：本发明提供了一种通过在基板上沉积不足厚度的金属膜来填充基板上的孔的方法，以填充次半微米孔径，然后在低压室内在低于熔点的温度下将基板退火沉积金属膜。本发明还提供了通过在退火膜上物理气相沉积金属膜而在无空隙孔上形成平坦化膜。

5. 发明授权

US06528180B1 Liner materials 失效
标题翻译：衬里材料
公开(公告)号：US06528180B1
公开(公告)日：2003-03-04
申请号：US09577705
申请日：2000-05-23
申请人： Wei Ti Lee , Ted Guo , Gongda Yao
发明人： Wei Ti Lee , Ted Guo , Gongda Yao
IPC分类号： H01L2940
CPC分类号： H01L21/76843 , H01L21/2855 , H01L21/76877 , Y10T428/12535 , Y10T428/12611 , Y10T428/12743 , Y10T428/12806 , Y10T428/26
摘要： A method for metallizing integrated circuits is disclosed. In one aspect, an integrated circuit is metallized by depositing liner material on a substrate followed by one or more metal layers. The liner material is selected from the group of tantalum (Ta), tantalum nitride (TaN), niobium (Nb), niobium nitride (NbN), vanadium (V), vanadium nitride (VN), and combinations thereof. The liner material is preferably conformably deposited on the substrate using physical vapor deposition (PVD). The one or more metal layers are deposited on the barrier layer using chemical vapor deposition (CVD), physical vapor deposition (PVD), or a combination of both CVD and PVD.
摘要翻译：公开了一种金属化集成电路的方法。在一个方面，集成电路通过将衬垫材料沉积在衬底上而后接一个或多个金属层进行金属化。衬垫材料选自钽（Ta），氮化钽（TaN），铌（Nb），氮化铌（NbN），钒（V），氮化钒（VN）及其组合。优选使用物理气相沉积（PVD）将衬垫材料适当地沉积在衬底上。使用化学气相沉积（CVD），物理气相沉积（PVD）或CVD和PVD的组合将一个或多个金属层沉积在阻挡层上。

6. 发明授权

US06169030A Metallization process and method 失效
标题翻译：金属化过程和方法
公开(公告)号：US06169030A
公开(公告)日：2001-01-02
申请号：US09007233
申请日：1998-01-14
申请人： Mehul B. Naik , Ted Guo , Liang-Yuh Chen , Roderick Craig Mosely , Israel Beinglass
发明人： Mehul B. Naik , Ted Guo , Liang-Yuh Chen , Roderick Craig Mosely , Israel Beinglass
IPC分类号： H01L2144
CPC分类号： C23C14/32 , C23C14/025 , C23C14/046 , H01L21/2855 , H01L21/76877
摘要： The invention generally provides an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free interconnections in high aspect ratio, sub-half micron applications. The invention provides a multi-step PVD process in which the plasma power is varied for each of the steps to obtain favorable fill characteristics as well as good reflectivity, morphology and throughput. The initial plasma powers are relatively low to ensure good, void-free filling of the aperture and, then, the plasma powers are increased to obtain the desired reflectivity and morphology characteristics. The invention provides an aperture filling process comprising physical vapor depositing a metal over the substrate and varying the plasma power during the physical vapor deposition. Preferably, the plasma power is varied from a first discrete low plasma power to a second discrete high plasma power. Even more preferably, the plasma power is varied from a first discrete low plasma power to a second discrete low plasma power to a third discrete high plasma power.
摘要翻译：本发明通常提供了一种改进的方法，用于在衬底上提供均匀的台阶覆盖和金属层的平坦化，以在高纵横比，半微米应用中形成连续的无空隙互连。本发明提供了一种多步骤PVD工艺，其中等离子体功率对于每个步骤而言是变化的，以获得良好的填充特性以及良好的反射率，形态和产量。初始等离子体功率相对较低，以确保孔的良好的无空隙填充，然后增加等离子体功率以获得期望的反射率和形态特征。本发明提供一种孔填充方法，其包括在物理气相沉积中物理气相沉积衬底上的金属并改变等离子体功率。优选地，等离子体功率从第一离散低等离子体功率变化到第二离散高等离子体功率。更优选地，等离子体功率从第一离散低等离子体功率变化到第二离散低等离子体功率到第三离散高等离子体功率。

7. 发明授权

US6110828A In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization 失效
标题翻译：使用选择性CVD AL进行集成插头/互连金属化的现场封盖铝插头（CAP）工艺
公开(公告)号：US6110828A
公开(公告)日：2000-08-29
申请号：US791653
申请日：1996-12-30
申请人： Ted Guo , Liang-Yuh Chen , Suchitra Subrahmanyan
发明人： Ted Guo , Liang-Yuh Chen , Suchitra Subrahmanyan
IPC分类号： H01L21/285 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/443
CPC分类号： H01L21/76879
摘要： The present invention generally provides a method of forming a structure having a selective CVD metal plug with a continuous barrier layer formed thereon. More particularly, the present invention applies a thin layer of warm PVD metal over a selective CVD metal plug and adjacent nodules on the dielectric field to planarize the metal surface. A barrier is then deposited over the planarized metal surface. Therefore, the invention provides the advantages of having (1) void-free, sub-half micron selective CVD metal via plugs and interconnects, and (2) a reduced number of process steps without the use of CMP, and (3) barrier layers over the metal plugs to improve the electromigration resistance of the metal.
摘要翻译：本发明通常提供一种形成具有在其上形成有连续势垒层的选择性CVD金属塞的结构的方法。更具体地说，本发明在选择性CVD金属塞上和在电介质场上的相邻结节上施加薄层的温热PVD金属以使金属表面平坦化。然后在平坦化的金属表面上沉积屏障。因此，本发明提供了具有（1）无空隙的半微米选择性CVD金属通孔塞和互连件的优点，和（2）减少数量的工艺步骤而不使用CMP，以及（3）阻挡层在金属插头上提高金属的电迁移阻力。

8. 发明申请

US20080308416A1 SPUTTERING TARGET HAVING INCREASED LIFE AND SPUTTERING UNIFORMITY 有权
标题翻译：具有增加生命和突破性的飞溅目标
公开(公告)号：US20080308416A1
公开(公告)日：2008-12-18
申请号：US11764772
申请日：2007-06-18
申请人： Adolph Miller Allen , Ki Hwan Yoon , Ted Guo , Hong S. Yang , Sang-Ho Yu
发明人： Adolph Miller Allen , Ki Hwan Yoon , Ted Guo , Hong S. Yang , Sang-Ho Yu
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/3423 , H01J37/3435
摘要： A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.
摘要翻译：用于溅射室的溅射靶包括安装有溅射板的背板。在一个版本中，背板包括具有包括环形凹槽的前表面的圆形板。溅射板包括包括溅射表面的圆盘和具有圆形脊的后侧表面，该圆形脊的形状和尺寸适于装配到背板的环形槽中。

9. 发明授权

US07378002B2 Aluminum sputtering while biasing wafer 失效
标题翻译：铝溅射同时偏置晶圆
公开(公告)号：US07378002B2
公开(公告)日：2008-05-27
申请号：US11209328
申请日：2005-08-23
申请人： Wei Ti Lee , Ted Guo , Sang-Ho Yu
发明人： Wei Ti Lee , Ted Guo , Sang-Ho Yu
IPC分类号： C23C14/35 , H01L21/44
CPC分类号： C23C14/185 , C23C14/025 , C23C14/046 , C23C14/345
摘要： An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors. The first step includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 150° C., and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 250° C., and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be relatively small and unbalanced in the first step and relatively large and balanced in the second.
摘要翻译：一种铝溅射工艺，包括RF偏置晶片和两步铝填充工艺和装置，用于在两个明显不同的条件下，优选在两个不同的等离子体溅射反应器中通过溅射将铝填充到窄通孔中。第一步包括将大部分电离铝原子溅射到相对冷的晶片上，例如保持在小于150℃，并且相当高的偏压以将铝原子吸引到窄孔中并蚀刻突出端。第二步包括在相对温暖的晶片上的更中性的溅射，例如保持在大于250℃，并且基本上无偏差以提供更多的各向同性和均匀的铝通量。围绕铝靶的背面扫描的磁控管可能在第一步骤中相对较小并且不平衡，而在第二步中相对较大且平衡。

10. 发明授权

US06518176B2 Method of selective formation of a barrier layer for a contact level via 失效
标题翻译：选择性形成接触层通孔阻挡层的方法
公开(公告)号：US06518176B2
公开(公告)日：2003-02-11
申请号：US09092747
申请日：1998-06-05
申请人： Ted Guo , Liang-Yuh Chen , Suchitra Subrahmanyan , Roderick C. Mosely
发明人： Ted Guo , Liang-Yuh Chen , Suchitra Subrahmanyan , Roderick C. Mosely
IPC分类号： H01L2144
CPC分类号： H01L21/76876 , H01L21/28518 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A contact level via and a method of performing selective deposition of a barrier layer to form a contact level via for selective aluminum metallization. Specifically, the method forms a self-aligned silicide region by depositing titanium atop a structure containing a contact level via, converting the titanium in the contact regions into titanium silicide, removing the unreacted titanium, and performing nitridation of the titanium silicide to complete a barrier layer located in only the contact region of the via. Once the barrier layer is formed, the layer can be optionally fortified through oxygen stuffing to create an effective barrier layer for aluminum metallization.
摘要翻译：接触电平通孔和执行选择性沉积阻挡层以形成用于选择性铝金属化的接触电平通路的方法。具体地，该方法通过在包含接触电平通孔的结构上方沉积钛而形成自对准硅化物区域，将接触区域中的钛转化为硅化钛，除去未反应的钛，并进行硅化钛的氮化以完成阻挡层层位于通孔的接触区域中。一旦形成了阻挡层，就可以通过氧气填充来选择性地强化该层，以产生用于铝金属化的有效阻挡层。

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