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    • 6. 发明授权
    • Method of inducing stresses in the channel region of a transistor
    • 在晶体管的沟道区域中产生应力的方法
    • US07528051B2
    • 2009-05-05
    • US10846734
    • 2004-05-14
    • Reza ArghavaniZheng YuanEllie Y. YiehShankar VenkataramanNitin K. Ingle
    • Reza ArghavaniZheng YuanEllie Y. YiehShankar VenkataramanNitin K. Ingle
    • H01L21/76
    • H01L29/6656H01L21/823807H01L29/6659H01L29/7833H01L29/7846
    • A method of fabricating a semiconductor device, where the method includes forming a transistor on a substrate, where the transistor includes a channel region configured to conduct charge between a source region and a drain region, forming a trench adjacent to the transistor, depositing a material on the substrate and within the trench, and annealing the material, where the material is tensile following the annealing and creates a tensile stress in the channel region. Also, a method of forming a trench isolation in a semiconductor device, where the method includes forming a trench in a substrate, forming a material within the trench at a lower deposition rate, forming the material on the substrate at a higher deposition rate after the depositing of the material within the trench, and annealing the material, where after the annealing the material in the trench is tensile.
    • 一种制造半导体器件的方法,其中所述方法包括在衬底上形成晶体管,其中所述晶体管包括被配置为在源极区域和漏极区域之间传导电荷的沟道区域,形成与所述晶体管相邻的沟槽, 在衬底上和沟槽内,并对材料进行退火,其中材料在退火之后是拉伸的,并且在沟道区域中产生拉伸应力。 另外,在半导体器件中形成沟槽隔离的方法,其中所述方法包括在衬底中形成沟槽,以较低的沉积速率在沟槽内形成材料,在衬底上以更高的沉积速率在衬底上形成材料 在沟槽内沉积材料并退火材料,其中在退火之后,沟槽中的材料是拉伸的。