专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008123690A Nonvolatile semiconductor memory device and rewriting method therefor 有权
标题翻译：非易失性半导体存储器件及其优化方法
公开(公告)号：JP2008123690A
公开(公告)日：2008-05-29
申请号：JP2008024514
申请日：2008-02-04
申请人： National Institute Of Advanced Industrial & Technology , Sharp Corp , シャープ株式会社 , 独立行政法人産業技術総合研究所
发明人： HOSOI YASUNARI , AWAYA NOBUYOSHI , INOUE AKIRA
IPC分类号： G11C13/00 , H01L27/10
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which stable high speed switching operation for a variable resistance element having resistance property changeable by applying of voltage to the element is performed. SOLUTION: A load circuit for applying voltage to a variable resistance element is provided so as to be connectable electrically in series with the variable resistance element, the load resistance property of the load circuit can be switched between two different properties, two load resistance properties of the load circuit are switched selectively when the resistance property of the variable resistance element transitions from a low resistance state to a high resistance state and when it transits from the high resistance state to the low resistance state, voltage required for transition from one side of two resistance properties to the other is applied to the variable resistance element by voltage for rewriting applied to a series circuit of the variable resistance element and the load circuit, after transition of the resistance property of the variable resistance element from one side to the other side, voltage applied to the variable resistance element becomes voltage which cannot be restored to the resistance property of one side from the resistance property of the other side by the selected load resistance property. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种非易失性半导体存储器件，其中对可变电阻元件进行稳定的高速切换操作，该可变电阻元件具有可通过向该元件施加电压而改变的电阻特性。解决方案：提供一种向可变电阻元件施加电压的负载电路，以便与可变电阻元件串联电连接，负载电路的负载电阻属性可以在两种不同的特性之间切换，两个负载当可变电阻元件的电阻特性从低电阻状态转变为高电阻状态并且当其从高电阻状态转变到低电阻状态时，负载电路的电阻特性被选择性地切换，从一个将另一方的两个电阻特性的一侧通过用于重写的电压施加到可变电阻元件，该电压在可变电阻元件和负载电路的串联电路从一侧转换到可变电阻元件的电阻特性之后另一方面，施加到可变电阻元件的电压变成无法施加的电压通过选择的负载电阻特性，可以将一侧的电阻特性从另一侧的电阻特性恢复。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007188603A Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：JP2007188603A
公开(公告)日：2007-07-26
申请号：JP2006006738
申请日：2006-01-13
申请人： National Institute Of Advanced Industrial & Technology , Sharp Corp , シャープ株式会社 , 独立行政法人産業技術総合研究所
发明人： HOSOI YASUNARI , AWAYA NOBUYOSHI , INOUE AKIRA
IPC分类号： G11C13/00 , H01L27/10
CPC分类号： G11C13/0069 , G11C13/0007 , G11C13/003 , G11C2013/009 , G11C2213/31 , G11C2213/32 , G11C2213/72 , G11C2213/76 , G11C2213/79
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which stable high speed switching operation can be performed for a variable resistance element in which a resistance property is varied by applying voltage. SOLUTION: A load circuit for applying voltage to the variable resistance element is provided so as to be connected in series to the variable resistance element electrically, a load resistance property of the load circuit is constituted so as to be switchable between two different properties, two load resistance properties of the load circuit are switched selectively depending on whether the resistance property of the variable resistance element is shifted from a low resistance state to a high resistance state or it is shifted from the high resistance state to the low resistance state, voltage required for shifting from one state to the other in two resistance properties is applied to the variable resistance element by voltage for rewriting applied to the series circuit of the variable resistance element and the load circuit, after the resistance property of the variable resistance element is shifted from one state to the other, voltage applied to the variable resistance element can be restored from the other resistance property to one resistance property by the selected load resistance property. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种非易失性半导体存储器件，其中可以对通过施加电压来改变电阻特性的可变电阻元件执行稳定的高速切换操作。解决方案：提供用于向可变电阻元件施加电压的负载电路，以与电可变电阻元件串联连接，负载电路的负载电阻特性被构造成可在两个不同的可变电阻元件之间切换选择性地切换负载电路的两个负载电阻特性，这取决于可变电阻元件的电阻特性是从低电阻状态转移到高电阻状态还是从高电阻状态转移到低电阻状态在可变电阻元件的电阻特性之后，通过施加到可变电阻元件和负载电路的串联电路的重写电压，将可变电阻元件施加到两个电阻特性中从一个状态向另一个状态移动所需的电压从一个状态转移到另一个状态，施加到可变电阻元件的电压可以通过选择的负载电阻特性从另一个电阻特性恢复到一个电阻特性。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2005317787A Switching element, and array type functional element using same switching element 有权
标题翻译：切换元件和使用相同开关元件的阵列型功能元件
公开(公告)号：JP2005317787A
公开(公告)日：2005-11-10
申请号：JP2004134342
申请日：2004-04-28
申请人： Matsushita Electric Ind Co Ltd , National Institute Of Advanced Industrial & Technology , 松下電器産業株式会社 , 独立行政法人産業技術総合研究所
发明人： ODAKAWA AKIHIRO , AKAHO HIROSHI , SATO HIROSHI , YAMADA JUICHI , ISHII YUJI , INOUE AKIRA , SAWA AKIHITO , KAWASAKI MASASHI , TAKAGI HIDENORI , TOKURA YOSHINORI
IPC分类号： H01L27/10 , H01L21/8246 , H01L27/105 , H01L49/02
摘要： PROBLEM TO BE SOLVED: To provide an array type functional element which can be more fined than conventional ones, by using a switching element as the selecting portion of the functional element. SOLUTION: As each switching element, there is used each multilayer structure wherein a strongly correlated electronic material is sandwiched by two or more electrodes. Then, each multilayer structure is so connected in series with each variable-resistance type element of a functional element as to realize a random access memory by arranging the resultant intermediates in the form of an array. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过使用开关元件作为功能元件的选择部分，提供可以比常规的更精细的阵列型功能元件。解决方案：作为每个开关元件，使用每个多层结构，其中强相关的电子材料被两个或更多个电极夹在中。然后，每个多层结构与功能元件的每个可变电阻型元件串联连接，以通过将所得到的中间体排列成阵列来实现随机存取存储器。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005129908A Magnetic switching element and memory device using it 审中-公开
标题翻译：磁性开关元件及其使用的存储器件
公开(公告)号：JP2005129908A
公开(公告)日：2005-05-19
申请号：JP2004267239
申请日：2004-09-14
申请人： Matsushita Electric Ind Co Ltd , National Institute Of Advanced Industrial & Technology , 松下電器産業株式会社 , 独立行政法人産業技術総合研究所
发明人： ODAKAWA AKIHIRO , SATO HIROSHI , YAMADA JUICHI , ISHII YUJI , INOUE AKIRA , AKAHO HIROSHI , KAWASAKI MASASHI , TAKAGI HIDENORI
IPC分类号： G11B5/39 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a method for inverting the magnetized state in a magnetic body with high energy conversion efficiency, a magnetic switching element which substantially reduces energy consumption of the entire magnetic device that changes the magnetized state provided by an external magnetic field, and a memory device using the magnetic switching element. SOLUTION: A magnetic switching element comprises at least one transfer body (1), at least one electrode (2), and at least one free magnetic body (3). The transfer body (1) of the magnetic switching element is made of a perovskite compound containing at least a rare-earth element and an alkaline earth metal. On the transfer body (1), the electrode (2) and the free magnetic body (3) are placed so that they are in parallel with each other, and that they are separated from each other. At least one free magnetic body (3) is magnetically coupled to the transfer body (1), and the transfer body (1) is transferred to a ferromagnetic state or an antiferromagnetic state through injection/induction of electrons/holes, thereby changing at least one magnetization direction of the free magnetic body (3). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种用于以高能量转换效率来反转磁体的磁化状态的方法，磁性开关元件显着降低整个磁性器件的能量消耗，从而改变由外部电路提供的磁化状态磁场，以及使用该磁性开关元件的存储器件。解决方案：磁性开关元件包括至少一个转移体（1），至少一个电极（2）和至少一个自由磁体（3）。磁性开关元件的转移体（1）由至少包含稀土元素和碱土金属的钙钛矿化合物制成。在转印体（1）上，电极（2）和自由磁体（3）彼此平行放置，并且彼此分离。至少一个自由磁体（3）磁耦合到传输体（1），并且传输体（1）通过注入/感应电子/孔而被转移到铁磁状态或反铁磁状态，从而至少改变自由磁体（3）的一个磁化方向。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2012064775A Field effect transistor and method for manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：JP2012064775A
公开(公告)日：2012-03-29
申请号：JP2010208052
申请日：2010-09-16
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： INOUE AKIRA , SHIMA HISASHI
IPC分类号： H01L29/78 , H01L21/28 , H01L29/417 , H01L29/423 , H01L29/49
摘要： PROBLEM TO BE SOLVED: To provide: a field effect transistor having a gate insulating film allowing a high concentration of carriers of 10cmor more to be implanted into an FET having a channel using a single crystal of a complex oxide only by a field effect, and allowing the ideal interface with the channel in which mobility of the carriers reaches 10 cm/Vs even at room temperature to be obtained; and a method for manufacturing the same.SOLUTION: A field effect transistor comprises: a complex oxide single crystal substrate having a perovskite structure constituting a channel layer; and a gate insulating film including a laminated structure in which a polymer film of paraxylene and tantalum oxide are laminated in this order on the complex oxide single crystal substrate.
摘要翻译：要解决的问题：提供：具有允许高浓度载流子的栅极绝缘膜的场效应晶体管，其具有10 “ -2 或更多，仅通过场效应被注入到具有使用复合氧化物的单晶的沟道的FET中，并且允许与载流子迁移率达到10cm 2 / Vs即使在室温下也可获得; 及其制造方法。解决方案：场效应晶体管包括：具有构成沟道层的钙钛矿结构的复合氧化物单晶衬底; 以及包含层叠结构的栅极绝缘膜，其中对二甲苯和氧化钽的聚合物膜依次层叠在复合氧化物单晶基板上。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2005064397A Electronic component 审中-公开
标题翻译：电子元件
公开(公告)号：JP2005064397A
公开(公告)日：2005-03-10
申请号：JP2003295641
申请日：2003-08-19
申请人： Matsushita Electric Ind Co Ltd , National Institute Of Advanced Industrial & Technology , 松下電器産業株式会社 , 独立行政法人産業技術総合研究所
发明人： INOUE AKIRA , ODAKAWA AKIHIRO , YAMADA HIROYUKI , TAKAGI HIDENORI , KAWASAKI MASASHI , AKAHO HIROSHI , TOKURA YOSHINORI
IPC分类号： H01L27/10
摘要： PROBLEM TO BE SOLVED: To fabricate a nonvolatile random access memory (NVRAM) with a device that does not use any dopant at all.
SOLUTION: A heteroepitaxial junction interface between different oxide insulators is used for the NVRAM device. The electrical resistance value for the electric current flowing in the junction interface parallel to the interface is changed in a nonvolatile manner by an electric current or voltage pulse applied to the junction interface via the same path as that of the electric current. A two terminal NVRAM device that can write, read and erase information repetitively is provided by utilizing the nonvolatile change of the electrical resistance of the interface by the pulse. The junction between the two different oxide insulators is, for example, a junction between perovskite-type oxides expressed respectively by chemical formulas ABO
3 and CDO
3 , where A and C are alkali metals (group 1A of the periodic table), alkaline-earth metals (group 2A of the periodic table), or rare-earth elements; B is a transition metal (groups 2B to 7B, and group 8 of the periodic table) or an element of groups 3A to 5A of the periodic table. O is oxygen. The elements of A and B may be mutually exchanged. Also, both A and B may be transition metals.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：使用不使用任何掺杂剂的器件制造非易失性随机存取存储器（NVRAM）。
解决方案：NVRAM器件使用不同氧化物绝缘体之间的异质外延结界面。通过与电流相同的路径，通过施加到接合界面的电流或电压脉冲以非易失性方式改变在与界面平行的接合界面中流动的电流的电阻值。通过利用脉冲对接口的电阻的非易失性变化，可以重复地写入，读取和擦除信息的双端NVRAM器件。两种不同的氧化物绝缘体之间的连接点是例如分别由化学式ABO 3 和CDO 3 表示的钙钛矿型氧化物之间的连接点，其中A和C是碱金属（元素周期表中的1A族），碱土金属（元素周期表2A族）或稀土元素; B是过渡金属（元素周期表的2B至7B族和第8族）或元素周期表3A至5A族的元素。 O是氧气。 A和B的元素可以相互交换。此外，A和B都可以是过渡金属。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2007053125A Switching element 有权
标题翻译：开关元件
公开(公告)号：JP2007053125A
公开(公告)日：2007-03-01
申请号：JP2005235131
申请日：2005-08-15
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： INOUE AKIRA , AKINAGA HIROYUKI , YASUDA SHUICHIRO , TAKAGI HIDENORI
IPC分类号： H01L49/02 , H01L27/10 , H01L45/00 , H01L49/00
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： PROBLEM TO BE SOLVED: To provide a switching element which exhibits two of largely different resistance characteristics non-reciprocally and repetitively and can be applied to a highly integrated non-volatile memory. SOLUTION: The switching element is provided with a variable resistance element in which a metal oxide thin film consisting of a single center metal element including composition fluctuation is interposed between two electrodes. In the switching element, a control circuit capable of selectively applying: a voltage or a current of not less than a first threshold; a voltage or a current not more than a second threshold having an absolute value lower than that of the first threshold; and a voltage or a current not more than a third threshold having an absolute value lower than that of the second threshold, is connected between both the electrodes. In the switching element, a resistance characteristic between the electrodes in a potential region or a current region whose absolute value is at least not more than the third threshold is allowed to non-reciprocally change at 1,000-10,000 times. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种开关元件，该开关元件不是相互重复地展现出两个具有很大不同的电阻特性，并且可以应用于高度集成的非易失性存储器。解决方案：开关元件设置有可变电阻元件，其中由包括组成波动的单个中心金属元件组成的金属氧化物薄膜插入在两个电极之间。在开关元件中，能够选择性地施加：不小于第一阈值的电压或电流的控制电路; 具有绝对值低于第一阈值的绝对值的不大于第二阈值的电压或电流; 并且在两个电极之间连接具有绝对值低于第二阈值的绝对值的不大于第三阈值的电压或电流。在开关元件中，允许绝缘值至少不大于第三阈值的电位区域或电流区域中的电极之间的电阻特性在1,000-10,000次之间不可逆地变化。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2004179199A Field effect transistor operating at cryogenic temperature 审中-公开
公开(公告)号：JP2004179199A
公开(公告)日：2004-06-24
申请号：JP2002340227
申请日：2002-11-25
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： INOUE AKIRA , TAKAGI HIDENORI , YAMADA JUICHI , SATO HIROSHI , AKAHO HIROSHI , TOKURA YOSHINORI , UENO KAZUNORI , SAWA AKIHITO , ISHII YUJI , KAWASAKI MASASHI
IPC分类号： H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a transistor that can operate even at the liquid helium temperature (4.2 K) or below.
SOLUTION: This field effect transistor uses amorphous alumina for a gate insulating film and strontium titanate for a channel.
COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2012114373A Field effect transistor with perovskite type complex oxide as channel layer and manufacturing method therefor, and memory device using the same 有权
标题翻译：具有层状复合氧化物作为通道层的场效应晶体管及其制造方法，以及使用其的存储器件
公开(公告)号：JP2012114373A
公开(公告)日：2012-06-14
申请号：JP2010264199
申请日：2010-11-26
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： YAMADA HIROYUKI , XIANG PING-HUA , SAWA AKIHITO , INOUE AKIRA , SATO HIROSHI , ASANUMA SHUTARO , AKAHO HIROSHI
IPC分类号： H01L29/786 , H01L21/336 , H01L27/10 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a field effect transistor that changes a resistance by injecting charges with high concentration into a channel using the electrical double layer method, and to provide a memory device using the field effect transistor as a switching device.SOLUTION: The field effect transistor is formed from single crystal film, as a channel layer, comprised of complex oxide expressed in the following chemical formula: CaCeMnO(where, x is a real number satisfying 0≤x

10. 发明专利

JP2011243632A Field effect transistor having channel layer of perovskite-type complex oxide, manufacturing method thereof, and memory element using this 有权
标题翻译：具有层状复合氧化物的通道层的场效应晶体管，其制造方法和使用该存储元件的存储元件
公开(公告)号：JP2011243632A
公开(公告)日：2011-12-01
申请号：JP2010112133
申请日：2010-05-14
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： SAWA AKIHITO , ASANUMA SHUTARO , INOUE AKIRA , SATO HIROSHI , AKAHO HIROSHI , YAMADA HIROYUKI , IWASA YOSHIHIRO
IPC分类号： H01L29/786 , C01G53/00 , H01L27/10
摘要： PROBLEM TO BE SOLVED: To provide a field effect transistor which changes resistance by injecting a highly concentrated charge into a channel using an electrical double layer method and also to provide a memory element using the field effect transistor as a switching element.SOLUTION: A single crystal film, which has a perovskite structure and comprises a composite oxide represented by chemical formula : ABNiO, where A is one element selected from rare earth elements, B is at least one element of the rare earth elements except A, and x is an actual number satisfying 0≤x≤1), is used for a channel layer.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式