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1. 发明专利

JP2006216795A Superconducting photon detector 有权
标题翻译：超级光电探测器
公开(公告)号：JP2006216795A
公开(公告)日：2006-08-17
申请号：JP2005028261
申请日：2005-02-03
申请人： National Institute Of Advanced Industrial & Technology , Saitama Univ , 国立大学法人埼玉大学 , 独立行政法人産業技術総合研究所
发明人： TAINO TORU , MEIREN HIROAKI , TAKADA SUSUMU , YOSHIDA MASAYO , NAKAGAWA HIROSHI , KIKUCHI KATSUYA , AOYANAGI MASAHIRO , AKAHO HIROSHI
IPC分类号： H01L39/22 , G01J1/02 , G01T1/24 , G01T1/36 , H01L31/08
摘要： PROBLEM TO BE SOLVED: To provide a superconducting photon detector capable of removing noise of low energy caused by a phonon event.
SOLUTION: The superconducting photon detector comprises a lower superconducting electrode 13 laminated on a substrate 14, a tunnel barrier 12, and an upper superconducting electrode 11. It is interposed between the substrate 14 and the lower superconducting electrode 13, and provided with a phonon screening layer 20 formed with material with a larger reflective coefficient of the sound wave which enters from the substrate 14 than a transmission coefficient. The phonon cover layer 20 shields phonons which enter to the superconducting electrode 13 from the substrate 14. Accordingly, it is made possible to remove the noise of low energy caused by a phonon event as well as to observe correctly visible light of low energy.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够消除由声子事件引起的低能量噪声的超导光子检测器。超导光子检测器包括层叠在基板14上的下部超导电极13，隧道势垒12和上部超导电极11.它介于基板14和下部超导电极13之间，并且设置有形成有与传播系数相比从衬底14进入的声波的反射系数更大的材料形成的声子屏蔽层20。声子覆盖层20屏蔽从衬底14进入超导电极13的声子。因此，可以消除由声子事件引起的低能量的噪声，并且观察到正确可见的低能量的光。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005317787A Switching element, and array type functional element using same switching element 有权
标题翻译：切换元件和使用相同开关元件的阵列型功能元件
公开(公告)号：JP2005317787A
公开(公告)日：2005-11-10
申请号：JP2004134342
申请日：2004-04-28
申请人： Matsushita Electric Ind Co Ltd , National Institute Of Advanced Industrial & Technology , 松下電器産業株式会社 , 独立行政法人産業技術総合研究所
发明人： ODAKAWA AKIHIRO , AKAHO HIROSHI , SATO HIROSHI , YAMADA JUICHI , ISHII YUJI , INOUE AKIRA , SAWA AKIHITO , KAWASAKI MASASHI , TAKAGI HIDENORI , TOKURA YOSHINORI
IPC分类号： H01L27/10 , H01L21/8246 , H01L27/105 , H01L49/02
摘要： PROBLEM TO BE SOLVED: To provide an array type functional element which can be more fined than conventional ones, by using a switching element as the selecting portion of the functional element. SOLUTION: As each switching element, there is used each multilayer structure wherein a strongly correlated electronic material is sandwiched by two or more electrodes. Then, each multilayer structure is so connected in series with each variable-resistance type element of a functional element as to realize a random access memory by arranging the resultant intermediates in the form of an array. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过使用开关元件作为功能元件的选择部分，提供可以比常规的更精细的阵列型功能元件。解决方案：作为每个开关元件，使用每个多层结构，其中强相关的电子材料被两个或更多个电极夹在中。然后，每个多层结构与功能元件的每个可变电阻型元件串联连接，以通过将所得到的中间体排列成阵列来实现随机存取存储器。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005129908A Magnetic switching element and memory device using it 审中-公开
标题翻译：磁性开关元件及其使用的存储器件
公开(公告)号：JP2005129908A
公开(公告)日：2005-05-19
申请号：JP2004267239
申请日：2004-09-14
申请人： Matsushita Electric Ind Co Ltd , National Institute Of Advanced Industrial & Technology , 松下電器産業株式会社 , 独立行政法人産業技術総合研究所
发明人： ODAKAWA AKIHIRO , SATO HIROSHI , YAMADA JUICHI , ISHII YUJI , INOUE AKIRA , AKAHO HIROSHI , KAWASAKI MASASHI , TAKAGI HIDENORI
IPC分类号： G11B5/39 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a method for inverting the magnetized state in a magnetic body with high energy conversion efficiency, a magnetic switching element which substantially reduces energy consumption of the entire magnetic device that changes the magnetized state provided by an external magnetic field, and a memory device using the magnetic switching element. SOLUTION: A magnetic switching element comprises at least one transfer body (1), at least one electrode (2), and at least one free magnetic body (3). The transfer body (1) of the magnetic switching element is made of a perovskite compound containing at least a rare-earth element and an alkaline earth metal. On the transfer body (1), the electrode (2) and the free magnetic body (3) are placed so that they are in parallel with each other, and that they are separated from each other. At least one free magnetic body (3) is magnetically coupled to the transfer body (1), and the transfer body (1) is transferred to a ferromagnetic state or an antiferromagnetic state through injection/induction of electrons/holes, thereby changing at least one magnetization direction of the free magnetic body (3). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种用于以高能量转换效率来反转磁体的磁化状态的方法，磁性开关元件显着降低整个磁性器件的能量消耗，从而改变由外部电路提供的磁化状态磁场，以及使用该磁性开关元件的存储器件。解决方案：磁性开关元件包括至少一个转移体（1），至少一个电极（2）和至少一个自由磁体（3）。磁性开关元件的转移体（1）由至少包含稀土元素和碱土金属的钙钛矿化合物制成。在转印体（1）上，电极（2）和自由磁体（3）彼此平行放置，并且彼此分离。至少一个自由磁体（3）磁耦合到传输体（1），并且传输体（1）通过注入/感应电子/孔而被转移到铁磁状态或反铁磁状态，从而至少改变自由磁体（3）的一个磁化方向。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004032481A Superconducting pulse generating circuit 有权
公开(公告)号：JP2004032481A
公开(公告)日：2004-01-29
申请号：JP2002187368
申请日：2002-06-27
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： NAKAGAWA HIROSHI , AOYANAGI MASAHIRO , AKAHO HIROSHI , KIKUCHI KATSUYA , TAKADA SUSUMU , MEIREN HIROAKI , IIZUKA TAKESHI , TAKAHASHI JUNJI
IPC分类号： H01L39/22 , H03K19/195
摘要： PROBLEM TO BE SOLVED: To provide a superconducting pulse generating circuit in which a yield in manufacture of an integrated circuit is improved.
SOLUTION: In the superconducting pulse generating circuit, at least five or more Josephson junction elements are connected in series to constitute one superconducting loop. One ground terminal is provided in a loop. An input signal terminal is provided in the loop between a second Josephson junction element (J2) counted from the ground terminal and their residual Josephson junction elements. A bias power source is connected to the loop between the second Josephson junction element (J2) and the first Josephson junction element (J1) from the ground terminal, and an output terminal is provided.
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2005163128A Method for forming thin film 有权
标题翻译：形成薄膜的方法
公开(公告)号：JP2005163128A
公开(公告)日：2005-06-23
申请号：JP2003405372
申请日：2003-12-04
申请人： Matsushita Electric Ind Co Ltd , National Institute Of Advanced Industrial & Technology , 松下電器産業株式会社 , 独立行政法人産業技術総合研究所
发明人： SATO HIROSHI , ISHII YUJI , YAMADA JUICHI , AKAHO HIROSHI , KAWASAKI MASASHI , TOKURA YOSHINORI , ODAKAWA AKIHIRO
IPC分类号： C23C14/50
摘要： PROBLEM TO BE SOLVED: To uniformly heat a substrate to be mounted on a substrate holder of a high-temperature film-forming apparatus, without using silver paste.
SOLUTION: This thin-film-forming method fixes a substrate 13 on a substrate holder 12 by inserting first, second and third metallic foils 31, 32 and 33 between the substrate holder 12 and the substrate 13, and tightening them with a screw thread 24. The second metallic foil 32 has a thickness of 10 times or thicker than the first and third metallic foil 31 and 33; and is formed of a material with a melting point of 800°C or higher, Young's modulus of 150×10
9 N/m
2 or less and a heat conductivity of 200 W/mK or higher (for instance, copper). The first and third metallic foils are formed of a material with low reactivity at a high temperature (for instance, NiCr, Inconel and NiCrAlY); and have preferably a thickness in a range between 3 μm and 15 μm.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了均匀地加热要安装在高温成膜设备的基板保持器上的基板，而不使用银浆。解决方案：该薄膜形成方法通过将第一，第二和第三金属箔31,32和33插入在基板保持器12和基板13之间，将基板13固定在基板保持件12上，并且用第二金属箔32的厚度为第一和第三金属箔31和33的厚度的10倍或更厚; 并且由熔点为800℃以上的材料形成，杨氏模量为150×10 9 N / m 2 以下，导热率为200 W / mK以上（例如铜）。第一和第三金属箔由在高温下具有低反应性的材料（例如，NiCr，Inconel和NiCrAlY）形成; 并且优选具有在3μm和15μm之间的范围内的厚度。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005109180A Thin film forming component and manufacturing method thereof 有权
标题翻译：薄膜成型组件及其制造方法
公开(公告)号：JP2005109180A
公开(公告)日：2005-04-21
申请号：JP2003341194
申请日：2003-09-30
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： ENDO KAZUHIRO , SATO HIROSHI , AKAHO HIROSHI , ISHII YUJI , SAWA AKIHITO , YAMADA JUICHI , KAWASAKI MASASHI , TOKURA YOSHINORI
IPC分类号： H01L39/24 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To obtain a flat thin film without deteriorating superconductivity characteristics and inevitable to a superconductive element for manufacturing a superconductive elements such as microwave, milliwave elements or the like for a high performance Josephson element or high frequency filters employing an oxide high temperature superconductor.
SOLUTION: Etching is applied on a substrate previously excluding a region necessitated by an element. Then a film is formed thereon to obtain a flat film of free of sludge on a necessary element whereby there is no sludge in a part into which the element will not be incorporated, even when the film is formed under a condition for obtaining the manufacturing condition of excessive sludge or a high superconductivity characteristics whereby the flat film can be obtained.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了获得不劣化超导特性的平坦薄膜，并且不可避免地用于制造用于高性能约瑟夫森元件的微波，微波元件等超导元件的超导元件或使用氧化物高温超导体。解决方案：将蚀刻施加在预先排除元件所需的区域的基板上。然后在其上形成膜，以获得在所需要的元件上没有污泥的平膜，即使在用于获得制造条件的条件下形成膜时，在不会引入元件的部分中也没有污泥的过剩污泥或高超导特性，从而可以获得平膜。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2004179199A Field effect transistor operating at cryogenic temperature 审中-公开
公开(公告)号：JP2004179199A
公开(公告)日：2004-06-24
申请号：JP2002340227
申请日：2002-11-25
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： INOUE AKIRA , TAKAGI HIDENORI , YAMADA JUICHI , SATO HIROSHI , AKAHO HIROSHI , TOKURA YOSHINORI , UENO KAZUNORI , SAWA AKIHITO , ISHII YUJI , KAWASAKI MASASHI
IPC分类号： H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a transistor that can operate even at the liquid helium temperature (4.2 K) or below.
SOLUTION: This field effect transistor uses amorphous alumina for a gate insulating film and strontium titanate for a channel.
COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2012114373A Field effect transistor with perovskite type complex oxide as channel layer and manufacturing method therefor, and memory device using the same 有权
标题翻译：具有层状复合氧化物作为通道层的场效应晶体管及其制造方法，以及使用其的存储器件
公开(公告)号：JP2012114373A
公开(公告)日：2012-06-14
申请号：JP2010264199
申请日：2010-11-26
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： YAMADA HIROYUKI , XIANG PING-HUA , SAWA AKIHITO , INOUE AKIRA , SATO HIROSHI , ASANUMA SHUTARO , AKAHO HIROSHI
IPC分类号： H01L29/786 , H01L21/336 , H01L27/10 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a field effect transistor that changes a resistance by injecting charges with high concentration into a channel using the electrical double layer method, and to provide a memory device using the field effect transistor as a switching device.SOLUTION: The field effect transistor is formed from single crystal film, as a channel layer, comprised of complex oxide expressed in the following chemical formula: CaCeMnO(where, x is a real number satisfying 0≤x
摘要翻译：解决的问题：提供一种场效应晶体管，其通过使用电双层法将高浓度的电荷注入沟道来改变电阻，并且提供使用场效应晶体管作为开关器件的存储器件。解决方案：场效应晶体管由单晶膜形成，作为沟道层，由以下化学式表示的复合氧化物组成：Ca 1-x < SB POS =“POST”> x MnO 3 （其中，x是满足0≤x<1的实数）。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2008211082A Superconducting element, superconducting integrated circuit, and method of manufacturing superconducting element 审中-公开
标题翻译：超导元件，超导集成电路及制造超导元件的方法
公开(公告)号：JP2008211082A
公开(公告)日：2008-09-11
申请号：JP2007047993
申请日：2007-02-27
申请人： National Institute Of Advanced Industrial & Technology , Saitama Univ , 国立大学法人埼玉大学 , 独立行政法人産業技術総合研究所
发明人： TAINO TORU , MEIREN HIROAKI , TAKADA SUSUMU , ASA SHINICHI , SERITA YOSUKE , NAKAGAWA HIROSHI , KIKUCHI KATSUYA , AOYANAGI MASAHIRO , AKAHO HIROSHI
IPC分类号： H01L39/24
摘要： PROBLEM TO BE SOLVED: To provide a superconducting element in which its manufacturing cost is low and a miniaturization of a junction area S of a Josephson junction is easy without increasing the number of processes and complicating any manufacturing process, and also to provide a superconducting integrated circuit using this superconducting element and a method of manufacturing the superconducting element.
SOLUTION: The superconducting element is equipped with: a load 32; the Josephson junction providing a lower electrode wiring 33 electrically connected to this load 32, a tunnel barrier film 41 contacting with this lower electrode wiring 33, and an upper electrode 42 having vertical sidewalls and contacting with this tunnel barrier film 41; and a first interlayer insulating film 16 which has inner walls contacting with the vertical sidewalls of the upper electrode 42, surrounds peripheries of the upper electrode 42, has a top face consisting of a flat plane perpendicularly intersecting the inner walls, and also has a thickness thicker than the upper electrode 42. A top face of the first interlayer insulating film 16 is flat in a planarity of ±1/20 of a thickness of the upper electrode 42 within the range separated from the inner walls by at least the maximum size of a top face of the upper electrode 42.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供其制造成本低的超导元件，并且约瑟夫逊结的接合面积S的小型化容易，而不增加工艺的数量并使任何制造工艺复杂化，并且还提供使用该超导元件的超导集成电路和制造超导元件的方法。
解决方案：超导元件配有：负载32; 约瑟夫逊结提供与该负载32电连接的下电极配线33，与该下电极配线33接触的隧道势垒膜41和具有垂直侧壁并与该隧道势垒膜41接触的上电极42; 并且具有与上电极42的垂直侧壁接触的内壁的第一层间绝缘膜16围绕上电极42的周边具有由与内壁垂直相交的平面构成的顶面，并且还具有厚度第一层间绝缘膜16的顶面在与内壁分开的范围内的上电极42的厚度的±1/20的平坦度平坦至少最大尺寸上电极42的顶面。（C）2008，JPO＆INPIT

10. 发明专利

JP2005199376A Dot body, and dot mask and its manufacturing method 审中-公开
标题翻译： DOT身体和面罩及其制造方法
公开(公告)号：JP2005199376A
公开(公告)日：2005-07-28
申请号：JP2004007051
申请日：2004-01-14
申请人： Matsushita Electric Ind Co Ltd , National Institute Of Advanced Industrial & Technology , 松下電器産業株式会社 , 独立行政法人産業技術総合研究所
发明人： ODAKAWA AKIHIRO , AKAHO HIROSHI , SATO HIROSHI , YAMADA JUICHI , ISHII YUJI
IPC分类号： B82B1/00 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a nanosize structure composed of a dot body and its manufacturing method.
SOLUTION: A nanosize dot mask body composed of a dot structure, in which self-organization formation is executed by depositing an inorganic compound on a substrate having an uneven shape, is realized by using the substrate having an uneven shape. By this, it is possible to realize the nanosize dot structure in a self-organizing manner and also possible to provide the dot body, and the dot mask and its manufacturing method with an unconventional and simple method.
COPYRIGHT: (C)2005,JPO&NCIPI

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