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1. 发明专利

JP2008123690A Nonvolatile semiconductor memory device and rewriting method therefor 有权
标题翻译：非易失性半导体存储器件及其优化方法
公开(公告)号：JP2008123690A
公开(公告)日：2008-05-29
申请号：JP2008024514
申请日：2008-02-04
申请人： National Institute Of Advanced Industrial & Technology , Sharp Corp , シャープ株式会社 , 独立行政法人産業技術総合研究所
发明人： HOSOI YASUNARI , AWAYA NOBUYOSHI , INOUE AKIRA
IPC分类号： G11C13/00 , H01L27/10
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which stable high speed switching operation for a variable resistance element having resistance property changeable by applying of voltage to the element is performed. SOLUTION: A load circuit for applying voltage to a variable resistance element is provided so as to be connectable electrically in series with the variable resistance element, the load resistance property of the load circuit can be switched between two different properties, two load resistance properties of the load circuit are switched selectively when the resistance property of the variable resistance element transitions from a low resistance state to a high resistance state and when it transits from the high resistance state to the low resistance state, voltage required for transition from one side of two resistance properties to the other is applied to the variable resistance element by voltage for rewriting applied to a series circuit of the variable resistance element and the load circuit, after transition of the resistance property of the variable resistance element from one side to the other side, voltage applied to the variable resistance element becomes voltage which cannot be restored to the resistance property of one side from the resistance property of the other side by the selected load resistance property. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种非易失性半导体存储器件，其中对可变电阻元件进行稳定的高速切换操作，该可变电阻元件具有可通过向该元件施加电压而改变的电阻特性。解决方案：提供一种向可变电阻元件施加电压的负载电路，以便与可变电阻元件串联电连接，负载电路的负载电阻属性可以在两种不同的特性之间切换，两个负载当可变电阻元件的电阻特性从低电阻状态转变为高电阻状态并且当其从高电阻状态转变到低电阻状态时，负载电路的电阻特性被选择性地切换，从一个将另一方的两个电阻特性的一侧通过用于重写的电压施加到可变电阻元件，该电压在可变电阻元件和负载电路的串联电路从一侧转换到可变电阻元件的电阻特性之后另一方面，施加到可变电阻元件的电压变成无法施加的电压通过选择的负载电阻特性，可以将一侧的电阻特性从另一侧的电阻特性恢复。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007188603A Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：JP2007188603A
公开(公告)日：2007-07-26
申请号：JP2006006738
申请日：2006-01-13
申请人： National Institute Of Advanced Industrial & Technology , Sharp Corp , シャープ株式会社 , 独立行政法人産業技術総合研究所
发明人： HOSOI YASUNARI , AWAYA NOBUYOSHI , INOUE AKIRA
IPC分类号： G11C13/00 , H01L27/10
CPC分类号： G11C13/0069 , G11C13/0007 , G11C13/003 , G11C2013/009 , G11C2213/31 , G11C2213/32 , G11C2213/72 , G11C2213/76 , G11C2213/79
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which stable high speed switching operation can be performed for a variable resistance element in which a resistance property is varied by applying voltage. SOLUTION: A load circuit for applying voltage to the variable resistance element is provided so as to be connected in series to the variable resistance element electrically, a load resistance property of the load circuit is constituted so as to be switchable between two different properties, two load resistance properties of the load circuit are switched selectively depending on whether the resistance property of the variable resistance element is shifted from a low resistance state to a high resistance state or it is shifted from the high resistance state to the low resistance state, voltage required for shifting from one state to the other in two resistance properties is applied to the variable resistance element by voltage for rewriting applied to the series circuit of the variable resistance element and the load circuit, after the resistance property of the variable resistance element is shifted from one state to the other, voltage applied to the variable resistance element can be restored from the other resistance property to one resistance property by the selected load resistance property. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种非易失性半导体存储器件，其中可以对通过施加电压来改变电阻特性的可变电阻元件执行稳定的高速切换操作。解决方案：提供用于向可变电阻元件施加电压的负载电路，以与电可变电阻元件串联连接，负载电路的负载电阻特性被构造成可在两个不同的可变电阻元件之间切换选择性地切换负载电路的两个负载电阻特性，这取决于可变电阻元件的电阻特性是从低电阻状态转移到高电阻状态还是从高电阻状态转移到低电阻状态在可变电阻元件的电阻特性之后，通过施加到可变电阻元件和负载电路的串联电路的重写电压，将可变电阻元件施加到两个电阻特性中从一个状态向另一个状态移动所需的电压从一个状态转移到另一个状态，施加到可变电阻元件的电压可以通过选择的负载电阻特性从另一个电阻特性恢复到一个电阻特性。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2008306157A Variable resistive element and method for manufacturing the same, and nonvolatile semiconductor storage device 有权
标题翻译：可变电阻元件及其制造方法以及非易失性半导体存储器件
公开(公告)号：JP2008306157A
公开(公告)日：2008-12-18
申请号：JP2007292763
申请日：2007-11-12
申请人： National Institute Of Advanced Industrial & Technology , Sharp Corp , シャープ株式会社 , 独立行政法人産業技術総合研究所
发明人： TAMAI YUKIO , HOSOI YASUNARI , AWAYA NOBUYOSHI , ONISHI SHIGEO , ISHIHARA KAZUYA , SHIMA HISASHI , TAKANO FUMIYOSHI , AKINAGA HIROYUKI
IPC分类号： H01L27/10 , H01L45/00 , H01L49/00
CPC分类号： G11C13/0011 , G11C11/5614 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2013/009 , G11C2213/32 , G11C2213/34 , G11C2213/51 , G11C2213/56 , G11C2213/77 , H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： PROBLEM TO BE SOLVED: To provide a variable resistive element which performs high speed and low power consumption operation. SOLUTION: In the variable resistive element, a metal oxide layer 10 is provided between a first electrode 11 and a second electrode 12, and electrical resistance between the first and the second electrodes reversibly varies in accordance with application of electrical stress to between the first and the second electrodes. The metal oxide layer 10 has a filament 13 which is a current path wherein the density of a current flowing between the first and the second electrodes locally increases. A portion including at least the vicinity of an interface, which is between at least the one specified electrode 11 between the first electrode and the second electrode and the filament 13, on an interface between the specified electrode 11 and the metal oxide layer 10 is provided with an interface oxide 15 which is an oxide of at least one element included in the specified electrode 11 and different from the oxide of the metal oxide layer 10. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种执行高速和低功耗操作的可变电阻元件。解决方案：在可变电阻元件中，金属氧化物层10设置在第一电极11和第二电极12之间，并且第一和第二电极之间的电阻根据电应力的应用而可逆地变化，第一和第二电极。金属氧化物层10具有灯丝13，其是电流路径，其中在第一和第二电极之间流动的电流的密度局部增加。在规定的电极11和金属氧化物层10之间的界面上，至少包括位于第一电极和第二电极之间的至少一个规定电极11与灯丝13之间的界面附近的部分具有界面氧化物15，其是包括在指定电极11中并且不同于金属氧化物层10的氧化物的至少一种元素的氧化物。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2009141225A Variable resistive element, method for manufacturing variable resistive element, nonvolatile semiconductor storage device 审中-公开
标题翻译：可变电阻元件，制造可变电阻元件的方法，非易失性半导体存储器件
公开(公告)号：JP2009141225A
公开(公告)日：2009-06-25
申请号：JP2007317733
申请日：2007-12-07
申请人： National Institute Of Advanced Industrial & Technology , Sharp Corp , シャープ株式会社 , 独立行政法人産業技術総合研究所
发明人： TAMAI YUKIO , HOSOI YASUNARI , AWAYA NOBUYOSHI , ONISHI SHIGEO , ISHIHARA KAZUYA , SHIMA HISASHI , TAKANO FUMIYOSHI , AKINAGA HIROYUKI
IPC分类号： H01L27/10 , G11C13/00 , H01L45/00 , H01L49/00
CPC分类号： G11C8/08 , G11C13/0007 , G11C13/0028 , G11C2013/0083 , G11C2213/32 , G11C2213/56 , G11C2213/77 , H01C7/108 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1658 , Y10T29/49082
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device using a variable resistive element which lowers a forming voltage for forming a conduction portion within a metal oxide without increasing a leak current. SOLUTION: A variable resistive element 1 includes: an electrode 11, an electrode 12, and a metal oxide 10 interposed between the electrode 11 and the electrode 12, wherein the electrical resistance between the electrode 11 and the electrode 12 varies according to an applied voltage to the electrode 11 and the electrode 12, and a low resistance object 14, the electrical resistance of which is lower than that of the metal oxide 10, and isolated from at least one of the electrode 11 and the electrode 12, is provided in the metal oxide 10. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用可变电阻元件的非易失性半导体存储装置，其可降低用于在金属氧化物内形成导电部分的形成电压，而不增加泄漏电流。解决方案：可变电阻元件1包括：电极11，电极12和介于电极11和电极12之间的金属氧化物10，其中电极11和电极12之间的电阻根据对电极11和电极12施加的电压以及电阻低于金属氧化物10并与电极11和电极12中的至少一个隔离的低电阻对象14是提供在金属氧化物10中。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2010103555A Variable resistor element 有权
标题翻译：可变电阻元件
公开(公告)号：JP2010103555A
公开(公告)日：2010-05-06
申请号：JP2009296280
申请日：2009-12-25
申请人： National Institute Of Advanced Industrial Science & Technology , Sharp Corp , シャープ株式会社 , 独立行政法人産業技術総合研究所
发明人： TAMAI YUKIO , HOSOI YASUNARI , AWAYA NOBUYOSHI , ONISHI SHIGEO , ISHIHARA KAZUYA , SHIMA HISASHI , TAKANO FUMIYOSHI , AKINAGA HIROYUKI
IPC分类号： H01L49/00 , H01L27/10 , H01L45/00
摘要： PROBLEM TO BE SOLVED: To reduce a forming voltage applied to form a through-hole in a metal oxide material, without making the leakage current increase. SOLUTION: A variable resistor 1 includes an electrode 11, an electrode 12, and a metal oxide material disposed in between the electrode 11 and electrode 12, and the electrical resistance for the variable resistor 1 between the electrode 11 and the electrode 12 varies reversibly, according to the voltage applied between the electrode 11 and the electrode 12. The metal oxide material includes a resistor 14, which is separated from at least either of the electrode 11 and the electrode 12 and has resistance lower than resistance of the metal oxide material. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了降低施加在金属氧化物材料中形成通孔的成形电压，而不会使漏电流增加。解决方案：可变电阻器1包括设置在电极11和电极12之间的电极11，电极12和金属氧化物材料，以及电极11和电极12之间的可变电阻器1的电阻根据施加在电极11和电极12之间的电压可逆地变化。金属氧化物材料包括与电极11和电极12中的至少一个分离的电阻器14，并且具有低于金属电阻的电阻氧化物。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2010251479A Nonvolatile semiconductor memory device and method for manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：JP2010251479A
公开(公告)日：2010-11-04
申请号：JP2009098368
申请日：2009-04-14
申请人： Sharp Corp , シャープ株式会社
发明人： TABUCHI YOSHIAKI , AWAYA NOBUYOSHI , HOSOI YASUNARI
IPC分类号： H01L27/10 , H01L45/00 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a crosspoint type memory cell array of a new structure which can be multilayered, and does not increase the mask step by multilayering. SOLUTION: A plurality of first electrodes 102 extended to a first direction parallel to a substrate face are isolatedly formed on a substrate through an interlayer insulating film 106. A variable resistor 110 is pinched between the first electrodes 102 and second electrodes 112 at each crossing portion between the first electrodes 102 and the plurality of second electrodes 112 extended to a second direction vertical to the substrate face to form a nonvolatile variable resistance element. Thus, a plurality of crosspoint type two-dimensional memory cell arrays are formed on a face vertical to the substrate, and the second electrodes of the plurality of two-dimensional memory cell arrays are electrically connected to each other, thereby forming a three-dimensional memory cell arrays. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供可以被多层化的新结构的交叉点型存储单元阵列，并且不会通过多层化增加掩模步骤。解决方案：通过层间绝缘膜106将平行于衬底面延伸到第一方向的多个第一电极102隔离地形成在衬底上。可变电阻器110被夹在第一电极102和第二电极112之间第一电极102和多个第二电极112之间的每个交叉部分延伸到垂直于衬底面的第二方向，以形成非易失性可变电阻元件。因此，在与基板垂直的面上形成多个交叉点型二维存储单元阵列，并且多个二维存储单元阵列中的第二电极彼此电连接，从而形成三维存储单元阵列。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2008263159A Method of manufacturing variable resistance element 有权
标题翻译：制造可变电阻元件的方法
公开(公告)号：JP2008263159A
公开(公告)日：2008-10-30
申请号：JP2007282261
申请日：2007-10-30
申请人： Sharp Corp , シャープ株式会社
发明人： INOUE YUSHI , ONISHI TETSUYA , ISHIHARA KAZUYA , SHIBUYA TAKAHIRO , HOSOI YASUNARI , YAMAZAKI NOBUO , NAKANO TAKASHI
IPC分类号： H01L27/10 , H01L45/00 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing variable resistance elements which can exactly reproduce a stable switching operation. SOLUTION: A conductive thin film 14 is deposited on a semiconductor substrate 11 and is patterned after a predetermined figure, then a first interlayer insulating film 13 is deposited on the thin film 14. Then, an opening portion 15 is formed on the first interlayer insulating film 13 so that the upper surface of the conductive thin film 14 is exposed, and thinning treatment is carried out onto the conductive thin film 14 formed on the bottom of the opening portion 15, and then oxidation treatment is carried out onto the surrounding portion of the exposed conductive thin film 14. Whereby, a variable resistance film 16 is formed in the surrounding area of the opening portion 15, and the conductive thin film 14 is divided into a first electrode 14a and a second electrode 14b due to the variable resistance film 16. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造可精确再现稳定切换操作的可变电阻元件的方法。解决方案：将导电薄膜14沉积在半导体衬底11上，并在预定图形之后进行图案化，然后在薄膜14上沉积第一层间绝缘膜13.然后，在第一层间绝缘膜13，使得导电薄膜14的上表面露出，并且对形成在开口部15的底部的导电薄膜14进行稀化处理，然后进行氧化处理暴露的导电薄膜14的环绕部分。由此，在开口部分15的周围区域中形成可变电阻膜16，并且由于导电薄膜14被分为第一电极14a和第二电极14b 可变电阻膜16.版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008235427A Variable-resistance element and its manufacturing method and its driving method 有权
标题翻译：可变电阻元件及其制造方法及其驱动方法
公开(公告)号：JP2008235427A
公开(公告)日：2008-10-02
申请号：JP2007070322
申请日：2007-03-19
申请人： Sharp Corp , シャープ株式会社
发明人： ONISHI TETSUYA , HOSOI YASUNARI
IPC分类号： H01L27/10 , H01L21/822 , H01L27/04 , H01L45/00 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a variable-resistance element having an excellent LSI-process consistency, enabling a resistance switching operation without forming a filament path and displaying a stable resistance value and holding characteristics. SOLUTION: In the variable-resistance element, a variable resistor 4 is held between a first electrode 2 and a second electrode 3 and an electric resistance between both electrodes is changed by applying voltage pulses between the first electrode 2 and the second electrode 3. In the variable-resistance element, the variable resistor 4 comprises a transition metal oxide or a transition metal nitride, and configured of the transition metal oxide or the transition metal nitride whose contained oxygen concentration lowers towards a second contact surface brought into contact with the second electrode 3 from a first contact surface brought into contact with the first electrode 2. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有优异的LSI工艺一致性的可变电阻元件，能够进行电阻切换操作而不形成灯丝路径并显示稳定的电阻值和保持特性。解决方案：在可变电阻元件中，可变电阻器4保持在第一电极2和第二电极3之间，并且通过在第一电极2和第二电极之间施加电压脉冲来改变两个电极之间的电阻在可变电阻元件中，可变电阻器4包括过渡金属氧化物或过渡金属氮化物，并且由过渡金属氧化物或过渡金属氮化物构成，所述过渡金属氧化物或过渡金属氮化物的含氧浓度朝向与第二电极3从第一接触表面与第一电极2接触。版权所有：（C）2009，JPO＆INPIT

9. 发明专利

JP2007294998A Variable resistive element and its manufacturing method 有权
标题翻译：可变电阻元件及其制造方法
公开(公告)号：JP2007294998A
公开(公告)日：2007-11-08
申请号：JP2007178478
申请日：2007-07-06
申请人： Sharp Corp , シャープ株式会社
发明人： HOSOI YASUNARI , ISHIHARA KAZUYA , SHIBUYA TAKAHIRO , ONISHI TETSUYA , NAKANO TAKASHI
IPC分类号： H01L27/10 , H01L45/00 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a variable resistive element having a structure in which an area of an electrically contributing region of a variable resistor is more minute than an area specified by an upper electrode, a lower electrode and the like, and to provide its manufacturing method. SOLUTION: On the upper part of the lower electrode 1 disposed on a base substrate 5, a bump electrode material 2 extending parallelly in the same direction as the lower electrode 1 is formed. The different surface of the bump electrode material 2 from the contacting surface with the lower electrode 1 contacts with the variable resistor 3. The different surface of the variable resistor 3 from the contacting surface with the bump electrode material 2 contacts with the upper electrode 4. Thereby, since the crosspoint of the bump electrode material 2 (variable resistor 3) and the upper electrode 4 becomes the electrically contributing region of the variable resistor, the area of the region is reduced more than areas of the regions of conventional variable resistive elements. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可变电阻元件，其具有可变电阻器的电气区域的面积比由上电极，下电极等指定的面积更小的结构，以及提供其制造方法。解决方案：在设置在基底5上的下电极1的上部形成有与下电极1同向延伸的突起电极材料2。突起电极材料2与下电极1的接触面的不同表面与可变电阻3接触。可变电阻3与凸起电极材料2的接触面的不同表面与上电极4接触。因此，由于凸块电极材料2（可变电阻器3）和上部电极4的交叉点成为可变电阻器的电赋能区域，所以该区域的面积比常规可变电阻元件的区域的面积减小。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2011009344A Forming method of nonvolatile variable resistance element 审中-公开
标题翻译：非易失性电阻元件的形成方法
公开(公告)号：JP2011009344A
公开(公告)日：2011-01-13
申请号：JP2009149715
申请日：2009-06-24
申请人： Sharp Corp , シャープ株式会社
发明人： ONISHI JUNYA , HOSOI YASUNARI
IPC分类号： H01L27/10 , G11C13/00 , H01L45/00 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a forming treatment method to be performed at a low process cost by shortening a treatment time concerning the forming treatment of a nonvolatile variable resistance element of a memory cell, and restricting the element variation of a forming voltage to be required in the forming treatment.SOLUTION: A forming voltage pulse, which has the pulse width and voltage amplitude being the same as those of one of rewriting voltage pulses to be used for rewriting information which is stored in the nonvolatile variable resistance element, is applied between the electrodes of the nonvolatile variable resistance element in the state where the nonvolatile variable resistance element is heated at prescribed temperature being ≥50°C and ≤200°C.
摘要翻译：要解决的问题：为了通过缩短与存储单元的非易失性可变电阻元件的形成处理有关的处理时间，并且将形成电压的元件变化限制为低成本处理成本来提供成形处理方法形成处理中需要的一种形成电压脉冲，其具有与用于重写存储在非易失性可变电阻元件中的信息的重写电压脉冲的脉冲宽度和电压幅度相同的形成电压脉冲，在非易失性可变电阻元件在规定温度下被加热的状态下的非易失性可变电阻元件的电极之间的温度为≥50℃且≤200℃。

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