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1. 发明申请

US20090155546A1 FILM-FORMING COMPOSITION, METHOD FOR PATTERN FORMATION, AND THREE-DIMENSIONAL MOLD 审中-公开
标题翻译：成膜组合物，形成图案的方法和三维模具
公开(公告)号：US20090155546A1
公开(公告)日：2009-06-18
申请号：US12064342
申请日：2006-08-28
申请人： Naoki Yamashita , Kiyoshi Ishikawa , Yoshinori Sakamoto , Takuma Hojo
发明人： Naoki Yamashita , Kiyoshi Ishikawa , Yoshinori Sakamoto , Takuma Hojo
IPC分类号： B32B5/00 , G03F7/20 , G03F7/004
CPC分类号： G03F7/0043 , B81C99/009 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0045 , G03F7/0757 , G03F7/203 , Y10T428/24802
摘要： Disclosed are a film-forming composition which can form a pattern having an enhanced contrast by the action of uneven surface morphology produced after image development, and a method for forming a pattern and a three-dimensional mold using the composition. A composition comprising at least one of a hydrolysate and a condensation product of an alkoxy metal compound represented by the chemical formula (A), the composition additionally comprising a compound which can respond to at least one of light and heat to control the solubility of a finished film in a developing solution. R1n-M(OR2)4-n (A) wherein M represents a silicon, a germanium, a titanium, a tantalum, an indium or a tin; R1 represents a hydrogen atom or a monovalent organic group; R2 represents a monovalent organic group; and n represents an integer of 1 to 3.
摘要翻译：公开了一种成膜组合物，其可以通过图像显影后产生的不均匀表面形态的作用形成具有增强的对比度的图案，以及使用该组合物形成图案的方法和三维模具。一种组合物，其包含由化学式（A）表示的烷氧基金属化合物的水解产物和缩合产物中的至少一种，所述组合物另外包含可以响应于光和热中的至少一种以控制溶解度的化合物成品薄膜在开发中的解决方案。 <？in-line-formula description =“In-line Formulas”end =“lead”？> R1n-M（OR2）4-n（A）<？in-line-formula description =“In-line Formulas”end =“尾”→其中M表示硅，锗，钛，钽，铟或锡; R1表示氢原子或一价有机基团; R2表示一价有机基团; n表示1〜3的整数。

2. 发明申请

US20070042288A1 Positive photoresist composition and method for forming resist pattern 有权
标题翻译：正型光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20070042288A1
公开(公告)日：2007-02-22
申请号：US10554380
申请日：2004-04-22
申请人： Takuma Hojo , Kiyoshi Ishikawa , Tsuyoshi Nakamura , Tasuku Matsumiya
发明人： Takuma Hojo , Kiyoshi Ishikawa , Tsuyoshi Nakamura , Tasuku Matsumiya
IPC分类号： G03C1/00
CPC分类号： G03F7/40 , G03F7/0397 , G03F7/2059 , Y10S430/106 , Y10S430/111
摘要： The invention provides a positive photoresist composition which exhibits a high level of etching resistance and attains high resolution, and enables the formation of a fine pattern using an electron beam exposure step, as well as a method for forming a resist pattern that uses the positive photoresist composition. This positive photoresist composition for use with EB contains a resin component (A) that exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), wherein the component (A) comprises a copolymer containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, and a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) are protected with acid dissociable, dissolution inhibiting groups.
摘要翻译：本发明提供一种正光致抗蚀剂组合物，其具有高水平的耐蚀刻性并获得高分辨率，并且能够使用电子束曝光步骤形成精细图案，以及形成使用正性光致抗蚀剂的抗蚀剂图案的方法组成。用于EB的正性光致抗蚀剂组合物含有在酸作用下表现出增加的碱溶性的树脂组分（A），暴露时产生酸的酸产生剂组分（B）和有机溶剂（C），其中组分（A）包含含有由羟基苯乙烯衍生的第一结构单元（a1）和由具有醇羟基的（甲基）丙烯酸酯衍生的第二结构单元（a2）和结构单元的一部分羟基的共聚物（a1）和结构单元（a2）的醇羟基被酸解离，溶解抑制基团保护。

3. 发明申请

US20080241747A1 Positive Resist Composition and Method of Forming Resist Pattern 有权
标题翻译：正电阻组合物和形成抗蚀剂图案的方法
公开(公告)号：US20080241747A1
公开(公告)日：2008-10-02
申请号：US10586694
申请日：2005-01-14
申请人： Takuma Hojo , Kiyoshi Ishikawa , Tomoyuki Ando
发明人： Takuma Hojo , Kiyoshi Ishikawa , Tomoyuki Ando
IPC分类号： G03F7/004 , G03F7/26
CPC分类号： G03F7/0397 , G03F7/0392 , Y10S430/106 , Y10S430/122 , Y10S430/126
摘要： A positive resist composition that exhibits a large exposure margin, and excellent levels of resolution and dry etching resistance, as well as a method of forming a resist pattern that uses the positive resist composition. This resist composition includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and displays increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) contains a structural unit (a1) represented by a general formula (I) shown below, a structural unit (a2) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acid dissociable, dissolution inhibiting group (II) represented by a general formula (II) shown below, and a structural unit (a3) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acyclic acid dissociable, dissolution inhibiting group (III).
摘要翻译：显示出大的曝光裕度，优异的分辨率和耐干蚀刻性的阳性抗蚀剂组合物，以及形成使用正性抗蚀剂组合物的抗蚀剂图案的方法。该抗蚀剂组合物包括含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）和在曝光时产生酸的酸产生剂组分（B），其中树脂组分）包含由下述通式（I）表示的结构单元（a1），其中通过用酸取代上述通式（I）中的羟基已被保护的结构单元（a2）由下述通式（II）表示的可离解的溶解抑制基团（II）和其中通式（I）中的羟基用其氢原子进行保护而被保护的结构单元（a3）无环酸解离，溶解抑制组（III）。

4. 发明申请

US20060247346A1 Positive resist composition and method of formation of resist patterns 有权
标题翻译：抗蚀剂组合物的形成和抗蚀剂图案的形成方法
公开(公告)号：US20060247346A1
公开(公告)日：2006-11-02
申请号：US10553083
申请日：2004-04-15
申请人： Takuma Hojo , Kiyoshi Ishikawa
发明人： Takuma Hojo , Kiyoshi Ishikawa
IPC分类号： C08K5/41
CPC分类号： G03F7/0397
摘要： The invention provides a positive resist composition which has high etching resistance and attains high resolution, and a method of forming patterns by using the positive resist composition. The positive resist composition contains a resin component (A), which has acid dissociable, dissolution inhibiting groups, and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) is a polymer comprising structural units (al) represented by the general formula (I) shown below, and a portion of the hydroxyl groups of the units (al) are protected by replacing the hydrogen atoms of the hydroxyl groups with acid dissociable, dissolution inhibiting groups represented by the general formula (II) shown below: (wherein, R is a hydrogen atom or methyl group, R1 is an alkyl group having 1 to 5 carbon atoms, R2 is an alkyl group having 1 to 5 carbon atoms or a hydrogen atom, and X is an aliphatic polycyclic group having 10 to 16 carbon atoms or an aromatic polycyclic hydrocarbon group having 10 to 16 carbon atoms.)
摘要翻译：本发明提供了具有高耐蚀刻性和高分辨率的正型抗蚀剂组合物，以及通过使用正性抗蚀剂组合物形成图案的方法。正型抗蚀剂组合物含有具有酸解离性，溶解抑制基团，在酸作用下表现出增加的碱溶解性的树脂成分（A）和暴露时产生酸的酸产生剂成分（B），其中树脂成分（A）是包含由下述通式（I）表示的结构单元（a1）的聚合物，并且单元（a1）的一部分羟基通过用酸解离而置换羟基的氢原子来保护，由下述通式（II）表示的溶解抑制基团：（其中，R是氢原子或甲基，R 1是具有1至5个碳原子的烷基，R 0 > 2是具有1至5个碳原子的烷基或氢原子，X是具有10至16个碳原子的脂族多环基团或具有10至16个碳原子的芳族多环烃基。

5. 发明授权

US07727701B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07727701B2
公开(公告)日：2010-06-01
申请号：US10586694
申请日：2005-01-14
申请人： Takuma Hojo , Kiyoshi Ishikawa , Tomoyuki Ando
发明人： Takuma Hojo , Kiyoshi Ishikawa , Tomoyuki Ando
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0397 , G03F7/0392 , Y10S430/106 , Y10S430/122 , Y10S430/126
摘要： A positive resist composition that exhibits a large exposure margin, and excellent levels of resolution and dry etching resistance, as well as a method of forming a resist pattern that uses the positive resist composition. This resist composition includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and displays increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) contains a structural unit (a1) represented by a general formula (I) shown below, a structural unit (a2) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acid dissociable, dissolution inhibiting group (II) represented by a general formula (II) shown below, and a structural unit (a3) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acyclic acid dissociable, dissolution inhibiting group (III).
摘要翻译：显示出大的曝光裕度，优异的分辨率和耐干蚀刻性的阳性抗蚀剂组合物，以及形成使用正性抗蚀剂组合物的抗蚀剂图案的方法。该抗蚀剂组合物包括含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）和在曝光时产生酸的酸产生剂组分（B），其中树脂组分）包含由下述通式（I）表示的结构单元（a1），其中通过用酸取代上述通式（I）中的羟基已被保护的结构单元（a2）由下述通式（II）表示的可离解的溶解抑制基团（II）和其中通式（I）中的羟基用其取代氢原子进行保护的结构单元（a3）无环酸解离，溶解抑制组（III）。

6. 发明授权

US07524604B2 Positive resist composition and method of formation of resist patterns 有权
标题翻译：抗蚀剂组合物的形成和抗蚀剂图案的形成方法
公开(公告)号：US07524604B2
公开(公告)日：2009-04-28
申请号：US10553083
申请日：2004-04-15
申请人： Takuma Hojo , Kiyoshi Ishikawa
发明人： Takuma Hojo , Kiyoshi Ishikawa
IPC分类号： G03F7/039 , G03F7/38
CPC分类号： G03F7/0397
摘要： The invention provides a positive resist composition which has high etching resistance and attains high resolution, and a method of forming patterns by using the positive resist composition. The positive resist composition contains a resin component (A), which has acid dissociable, dissolution inhibiting groups, and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) is a polymer comprising structural units (a1) represented by the general formula (I) shown below, and a portion of the hydroxyl groups of the units (a1) are protected by replacing the hydrogen atoms of the hydroxyl groups with acid dissociable, dissolution inhibiting groups represented by the general formula (II) shown below: (wherein, R is a hydrogen atom or methyl group, R1 is an alkyl group having 1 to 5 carbon atoms, R2 is an alkyl group having 1 to 5 carbon atoms or a hydrogen atom, and X is an aliphatic polycyclic group having 10 to 16 carbon atoms or an aromatic polycyclic hydrocarbon group having 10 to 16 carbon atoms.)
摘要翻译：本发明提供了具有高耐蚀刻性和高分辨率的正型抗蚀剂组合物，以及通过使用正性抗蚀剂组合物形成图案的方法。正型抗蚀剂组合物含有具有酸解离性，溶解抑制基团，在酸作用下表现出增加的碱溶解性的树脂成分（A）和暴露时产生酸的酸产生剂成分（B），其中树脂成分（A）是包含由下述通式（I）表示的结构单元（a1）的聚合物，单元（a1）的一部分羟基通过用酸解离而置换羟基的氢原子来保护，由下述通式（II）表示的溶解抑制基团：（其中，R为氢原子或甲基，R 1为碳原子数1〜5的烷基，R 2为碳原子数为1〜5的烷基）或氢原子，X为碳原子数为10〜16的脂肪族多环基或碳原子数为10〜16的芳香族多环烃基。）

7. 发明授权

US07449276B2 Positive photoresist composition and method for forming resist pattern 有权
标题翻译：正型光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07449276B2
公开(公告)日：2008-11-11
申请号：US10554380
申请日：2004-04-22
申请人： Takuma Hojo , Kiyoshi Ishikawa , Tsuyoshi Nakamura , Tasuku Matsumiya
发明人： Takuma Hojo , Kiyoshi Ishikawa , Tsuyoshi Nakamura , Tasuku Matsumiya
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/40 , G03F7/0397 , G03F7/2059 , Y10S430/106 , Y10S430/111
摘要： The invention provides a positive photoresist composition which exhibits a high level of etching resistance and attains high resolution, and enables the formation of a fine pattern using an electron beam exposure step, as well as a method for forming a resist pattern that uses the positive photoresist composition. This positive photoresist composition for use with EB contains a resin component (A) that exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), wherein the component (A) comprises a copolymer containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, and a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) are protected with acid dissociable, dissolution inhibiting groups.
摘要翻译：本发明提供一种正光致抗蚀剂组合物，其具有高水平的耐蚀刻性并获得高分辨率，并且能够使用电子束曝光步骤形成精细图案，以及形成使用正性光致抗蚀剂的抗蚀剂图案的方法组成。用于EB的正性光致抗蚀剂组合物含有在酸作用下表现出增加的碱溶性的树脂组分（A），暴露时产生酸的酸产生剂组分（B）和有机溶剂（C），其中组分（A）包含含有由羟基苯乙烯衍生的第一结构单元（a 1）和由具有醇羟基的（甲基）丙烯酸酯衍生的第二结构单元（a 2）和一部分羟基的羟基的共聚物结构单元（a 1）和结构单元（a 2）的醇羟基被酸解离，溶解抑制基团保护。

8. 发明申请

US20070190447A1 Photoresist composition and method of forming resist pattern 审中-公开
标题翻译：光刻胶组合物和形成抗蚀剂图案的方法
公开(公告)号：US20070190447A1
公开(公告)日：2007-08-16
申请号：US10589382
申请日：2005-02-01
申请人： Toshiyuki Ogata , Takuma Hojo , Hiromitsu Tsuji , Takako Hirosaki , Mitsuru Sato
发明人： Toshiyuki Ogata , Takuma Hojo , Hiromitsu Tsuji , Takako Hirosaki , Mitsuru Sato
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , B82Y30/00 , G03F7/0382 , G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： The photoresist composition is formed by including the fullerene derivative (A) having two or more malonic ester residues. Preferably, the malonic ester residue is, a group is preferably expressed by the general formula (1) below. In the formula (1), R1 and R2 independently represent an alkyl group, which may be identical or different from each other. The alkyl group is a normal or branched chain, or cyclic alkyl group having 1 to 10 carbons, and n is an integer from 2 to 10.
摘要翻译：通过包含具有两个或多个丙二酸酯残基的富勒烯衍生物（A）形成光致抗蚀剂组合物。优选地，丙二酸酯残基是一个基团优选由下面通式（1）表示。在式（1）中，R 1和R 2独立地表示可以相同或不同的烷基。烷基是碳原子数为1〜10的正，支链或环状烷基，n为2〜10的整数。

9. 发明申请

US20090047600A1 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：US20090047600A1
公开(公告)日：2009-02-19
申请号：US11813765
申请日：2005-12-14
申请人： Takako Hirosaki , Tomoyuki Ando , Takuma Hojo
发明人： Takako Hirosaki , Tomoyuki Ando , Takuma Hojo
IPC分类号： G03C1/73 , G03F7/20
CPC分类号： G03F7/0397 , C08F212/14 , C08F220/24 , C08F220/26 , C08F220/28 , C08F257/00 , C08K5/17 , C09D125/18 , Y10S430/108 , Y10S430/111 , C08F2/04 , C08F216/12
摘要： Disclosed is a positive resist composition which can provide a positive resist composition and a resist pattern forming method, capable of forming a high resolution pattern with reduce LER, the positive resist composition comprising a resin component (A) which has acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid under exposure, wherein the resin component (A) contains a polymer compound (A1) having a structural unit (a1) derived from hydroxystyrene and a structural unit (a2) derived from an acrylate ester having acid dissociable, dissolution inhibiting groups, a fluorine atom or a fluorinated lower alkyl group being bonded at the α-position.
摘要翻译：公开了能够提供能够形成具有降低LER的高分辨率图案的正型抗蚀剂组合物和抗蚀剂图案形成方法的正性抗蚀剂组合物，正性抗蚀剂组合物包含具有酸解离性，溶解抑制基团的树脂组分（A）并且在酸的作用下表现出增加的碱溶解性，以及产生暴露酸的酸产生剂组分（B），其中树脂组分（A）含有具有衍生自下述结构单元（a1）的高分子化合物（A1）羟基苯乙烯和由具有酸解离性，溶解抑制基团，氟原子或氟化低级烷基在α-位上结合的丙烯酸酯衍生的结构单元（a2）。

10. 发明授权

US08785582B2 Vinylozy group-containing vinyl polymer 失效
标题翻译：含有Vinylozy基团的乙烯基聚合物
公开(公告)号：US08785582B2
公开(公告)日：2014-07-22
申请号：US12998030
申请日：2009-09-28
申请人： Takuma Hojo , Kyoko Yamamoto , Hiroki Fujiwara , Kazuhiko Atsumi , Take-aki Mitsudo
发明人： Takuma Hojo , Kyoko Yamamoto , Hiroki Fujiwara , Kazuhiko Atsumi , Take-aki Mitsudo
IPC分类号： C08F16/22 , C08F36/20 , C08F236/20 , C09D11/00 , C09J129/10 , C09J145/00 , C08F8/50
CPC分类号： C08F36/20 , C08F16/22 , C08F16/32 , C08F20/26 , C08F116/12 , C08F216/125 , C09D11/106 , C09D11/30 , C09D129/10 , C09J129/10
摘要： A vinyloxy group-containing vinyl polymer, useful as a heat or light curing reactive prepolymer, containing at least a constituent unit expressed by the following formula (I):
摘要翻译：含有乙烯基氧基的乙烯基聚合物，其可用作热或光固化反应性预聚物，其至少含有由下式（I）表示的构成单元：

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