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1. 发明授权

US07727701B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07727701B2
公开(公告)日：2010-06-01
申请号：US10586694
申请日：2005-01-14
申请人： Takuma Hojo , Kiyoshi Ishikawa , Tomoyuki Ando
发明人： Takuma Hojo , Kiyoshi Ishikawa , Tomoyuki Ando
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0397 , G03F7/0392 , Y10S430/106 , Y10S430/122 , Y10S430/126
摘要： A positive resist composition that exhibits a large exposure margin, and excellent levels of resolution and dry etching resistance, as well as a method of forming a resist pattern that uses the positive resist composition. This resist composition includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and displays increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) contains a structural unit (a1) represented by a general formula (I) shown below, a structural unit (a2) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acid dissociable, dissolution inhibiting group (II) represented by a general formula (II) shown below, and a structural unit (a3) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acyclic acid dissociable, dissolution inhibiting group (III).
摘要翻译：显示出大的曝光裕度，优异的分辨率和耐干蚀刻性的阳性抗蚀剂组合物，以及形成使用正性抗蚀剂组合物的抗蚀剂图案的方法。该抗蚀剂组合物包括含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）和在曝光时产生酸的酸产生剂组分（B），其中树脂组分）包含由下述通式（I）表示的结构单元（a1），其中通过用酸取代上述通式（I）中的羟基已被保护的结构单元（a2）由下述通式（II）表示的可离解的溶解抑制基团（II）和其中通式（I）中的羟基用其取代氢原子进行保护的结构单元（a3）无环酸解离，溶解抑制组（III）。

2. 发明授权

US07524604B2 Positive resist composition and method of formation of resist patterns 有权
标题翻译：抗蚀剂组合物的形成和抗蚀剂图案的形成方法
公开(公告)号：US07524604B2
公开(公告)日：2009-04-28
申请号：US10553083
申请日：2004-04-15
申请人： Takuma Hojo , Kiyoshi Ishikawa
发明人： Takuma Hojo , Kiyoshi Ishikawa
IPC分类号： G03F7/039 , G03F7/38
CPC分类号： G03F7/0397
摘要： The invention provides a positive resist composition which has high etching resistance and attains high resolution, and a method of forming patterns by using the positive resist composition. The positive resist composition contains a resin component (A), which has acid dissociable, dissolution inhibiting groups, and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) is a polymer comprising structural units (a1) represented by the general formula (I) shown below, and a portion of the hydroxyl groups of the units (a1) are protected by replacing the hydrogen atoms of the hydroxyl groups with acid dissociable, dissolution inhibiting groups represented by the general formula (II) shown below: (wherein, R is a hydrogen atom or methyl group, R1 is an alkyl group having 1 to 5 carbon atoms, R2 is an alkyl group having 1 to 5 carbon atoms or a hydrogen atom, and X is an aliphatic polycyclic group having 10 to 16 carbon atoms or an aromatic polycyclic hydrocarbon group having 10 to 16 carbon atoms.)
摘要翻译：本发明提供了具有高耐蚀刻性和高分辨率的正型抗蚀剂组合物，以及通过使用正性抗蚀剂组合物形成图案的方法。正型抗蚀剂组合物含有具有酸解离性，溶解抑制基团，在酸作用下表现出增加的碱溶解性的树脂成分（A）和暴露时产生酸的酸产生剂成分（B），其中树脂成分（A）是包含由下述通式（I）表示的结构单元（a1）的聚合物，单元（a1）的一部分羟基通过用酸解离而置换羟基的氢原子来保护，由下述通式（II）表示的溶解抑制基团：（其中，R为氢原子或甲基，R 1为碳原子数1〜5的烷基，R 2为碳原子数为1〜5的烷基）或氢原子，X为碳原子数为10〜16的脂肪族多环基或碳原子数为10〜16的芳香族多环烃基。）

3. 发明授权

US07449276B2 Positive photoresist composition and method for forming resist pattern 有权
标题翻译：正型光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07449276B2
公开(公告)日：2008-11-11
申请号：US10554380
申请日：2004-04-22
申请人： Takuma Hojo , Kiyoshi Ishikawa , Tsuyoshi Nakamura , Tasuku Matsumiya
发明人： Takuma Hojo , Kiyoshi Ishikawa , Tsuyoshi Nakamura , Tasuku Matsumiya
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/40 , G03F7/0397 , G03F7/2059 , Y10S430/106 , Y10S430/111
摘要： The invention provides a positive photoresist composition which exhibits a high level of etching resistance and attains high resolution, and enables the formation of a fine pattern using an electron beam exposure step, as well as a method for forming a resist pattern that uses the positive photoresist composition. This positive photoresist composition for use with EB contains a resin component (A) that exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), wherein the component (A) comprises a copolymer containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, and a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) are protected with acid dissociable, dissolution inhibiting groups.
摘要翻译：本发明提供一种正光致抗蚀剂组合物，其具有高水平的耐蚀刻性并获得高分辨率，并且能够使用电子束曝光步骤形成精细图案，以及形成使用正性光致抗蚀剂的抗蚀剂图案的方法组成。用于EB的正性光致抗蚀剂组合物含有在酸作用下表现出增加的碱溶性的树脂组分（A），暴露时产生酸的酸产生剂组分（B）和有机溶剂（C），其中组分（A）包含含有由羟基苯乙烯衍生的第一结构单元（a 1）和由具有醇羟基的（甲基）丙烯酸酯衍生的第二结构单元（a 2）和一部分羟基的羟基的共聚物结构单元（a 1）和结构单元（a 2）的醇羟基被酸解离，溶解抑制基团保护。

4. 发明申请

US20090155546A1 FILM-FORMING COMPOSITION, METHOD FOR PATTERN FORMATION, AND THREE-DIMENSIONAL MOLD 审中-公开
标题翻译：成膜组合物，形成图案的方法和三维模具
公开(公告)号：US20090155546A1
公开(公告)日：2009-06-18
申请号：US12064342
申请日：2006-08-28
申请人： Naoki Yamashita , Kiyoshi Ishikawa , Yoshinori Sakamoto , Takuma Hojo
发明人： Naoki Yamashita , Kiyoshi Ishikawa , Yoshinori Sakamoto , Takuma Hojo
IPC分类号： B32B5/00 , G03F7/20 , G03F7/004
CPC分类号： G03F7/0043 , B81C99/009 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0045 , G03F7/0757 , G03F7/203 , Y10T428/24802
摘要： Disclosed are a film-forming composition which can form a pattern having an enhanced contrast by the action of uneven surface morphology produced after image development, and a method for forming a pattern and a three-dimensional mold using the composition. A composition comprising at least one of a hydrolysate and a condensation product of an alkoxy metal compound represented by the chemical formula (A), the composition additionally comprising a compound which can respond to at least one of light and heat to control the solubility of a finished film in a developing solution. R1n-M(OR2)4-n (A) wherein M represents a silicon, a germanium, a titanium, a tantalum, an indium or a tin; R1 represents a hydrogen atom or a monovalent organic group; R2 represents a monovalent organic group; and n represents an integer of 1 to 3.
摘要翻译：公开了一种成膜组合物，其可以通过图像显影后产生的不均匀表面形态的作用形成具有增强的对比度的图案，以及使用该组合物形成图案的方法和三维模具。一种组合物，其包含由化学式（A）表示的烷氧基金属化合物的水解产物和缩合产物中的至少一种，所述组合物另外包含可以响应于光和热中的至少一种以控制溶解度的化合物成品薄膜在开发中的解决方案。 <？in-line-formula description =“In-line Formulas”end =“lead”？> R1n-M（OR2）4-n（A）<？in-line-formula description =“In-line Formulas”end =“尾”→其中M表示硅，锗，钛，钽，铟或锡; R1表示氢原子或一价有机基团; R2表示一价有机基团; n表示1〜3的整数。

5. 发明申请

US20080241747A1 Positive Resist Composition and Method of Forming Resist Pattern 有权
标题翻译：正电阻组合物和形成抗蚀剂图案的方法
公开(公告)号：US20080241747A1
公开(公告)日：2008-10-02
申请号：US10586694
申请日：2005-01-14
申请人： Takuma Hojo , Kiyoshi Ishikawa , Tomoyuki Ando
发明人： Takuma Hojo , Kiyoshi Ishikawa , Tomoyuki Ando
IPC分类号： G03F7/004 , G03F7/26
CPC分类号： G03F7/0397 , G03F7/0392 , Y10S430/106 , Y10S430/122 , Y10S430/126
摘要： A positive resist composition that exhibits a large exposure margin, and excellent levels of resolution and dry etching resistance, as well as a method of forming a resist pattern that uses the positive resist composition. This resist composition includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and displays increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) contains a structural unit (a1) represented by a general formula (I) shown below, a structural unit (a2) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acid dissociable, dissolution inhibiting group (II) represented by a general formula (II) shown below, and a structural unit (a3) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acyclic acid dissociable, dissolution inhibiting group (III).
摘要翻译：显示出大的曝光裕度，优异的分辨率和耐干蚀刻性的阳性抗蚀剂组合物，以及形成使用正性抗蚀剂组合物的抗蚀剂图案的方法。该抗蚀剂组合物包括含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）和在曝光时产生酸的酸产生剂组分（B），其中树脂组分）包含由下述通式（I）表示的结构单元（a1），其中通过用酸取代上述通式（I）中的羟基已被保护的结构单元（a2）由下述通式（II）表示的可离解的溶解抑制基团（II）和其中通式（I）中的羟基用其氢原子进行保护而被保护的结构单元（a3）无环酸解离，溶解抑制组（III）。

6. 发明申请

US20060247346A1 Positive resist composition and method of formation of resist patterns 有权
标题翻译：抗蚀剂组合物的形成和抗蚀剂图案的形成方法
公开(公告)号：US20060247346A1
公开(公告)日：2006-11-02
申请号：US10553083
申请日：2004-04-15
申请人： Takuma Hojo , Kiyoshi Ishikawa
发明人： Takuma Hojo , Kiyoshi Ishikawa
IPC分类号： C08K5/41
CPC分类号： G03F7/0397
摘要： The invention provides a positive resist composition which has high etching resistance and attains high resolution, and a method of forming patterns by using the positive resist composition. The positive resist composition contains a resin component (A), which has acid dissociable, dissolution inhibiting groups, and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) is a polymer comprising structural units (al) represented by the general formula (I) shown below, and a portion of the hydroxyl groups of the units (al) are protected by replacing the hydrogen atoms of the hydroxyl groups with acid dissociable, dissolution inhibiting groups represented by the general formula (II) shown below: (wherein, R is a hydrogen atom or methyl group, R1 is an alkyl group having 1 to 5 carbon atoms, R2 is an alkyl group having 1 to 5 carbon atoms or a hydrogen atom, and X is an aliphatic polycyclic group having 10 to 16 carbon atoms or an aromatic polycyclic hydrocarbon group having 10 to 16 carbon atoms.)
摘要翻译：本发明提供了具有高耐蚀刻性和高分辨率的正型抗蚀剂组合物，以及通过使用正性抗蚀剂组合物形成图案的方法。正型抗蚀剂组合物含有具有酸解离性，溶解抑制基团，在酸作用下表现出增加的碱溶解性的树脂成分（A）和暴露时产生酸的酸产生剂成分（B），其中树脂成分（A）是包含由下述通式（I）表示的结构单元（a1）的聚合物，并且单元（a1）的一部分羟基通过用酸解离而置换羟基的氢原子来保护，由下述通式（II）表示的溶解抑制基团：（其中，R是氢原子或甲基，R 1是具有1至5个碳原子的烷基，R 0 > 2是具有1至5个碳原子的烷基或氢原子，X是具有10至16个碳原子的脂族多环基团或具有10至16个碳原子的芳族多环烃基。

7. 发明申请

US20070042288A1 Positive photoresist composition and method for forming resist pattern 有权
标题翻译：正型光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20070042288A1
公开(公告)日：2007-02-22
申请号：US10554380
申请日：2004-04-22
申请人： Takuma Hojo , Kiyoshi Ishikawa , Tsuyoshi Nakamura , Tasuku Matsumiya
发明人： Takuma Hojo , Kiyoshi Ishikawa , Tsuyoshi Nakamura , Tasuku Matsumiya
IPC分类号： G03C1/00
CPC分类号： G03F7/40 , G03F7/0397 , G03F7/2059 , Y10S430/106 , Y10S430/111
摘要： The invention provides a positive photoresist composition which exhibits a high level of etching resistance and attains high resolution, and enables the formation of a fine pattern using an electron beam exposure step, as well as a method for forming a resist pattern that uses the positive photoresist composition. This positive photoresist composition for use with EB contains a resin component (A) that exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), wherein the component (A) comprises a copolymer containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, and a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) are protected with acid dissociable, dissolution inhibiting groups.
摘要翻译：本发明提供一种正光致抗蚀剂组合物，其具有高水平的耐蚀刻性并获得高分辨率，并且能够使用电子束曝光步骤形成精细图案，以及形成使用正性光致抗蚀剂的抗蚀剂图案的方法组成。用于EB的正性光致抗蚀剂组合物含有在酸作用下表现出增加的碱溶性的树脂组分（A），暴露时产生酸的酸产生剂组分（B）和有机溶剂（C），其中组分（A）包含含有由羟基苯乙烯衍生的第一结构单元（a1）和由具有醇羟基的（甲基）丙烯酸酯衍生的第二结构单元（a2）和结构单元的一部分羟基的共聚物（a1）和结构单元（a2）的醇羟基被酸解离，溶解抑制基团保护。

8. 发明授权

US08323745B2 Application liquid and method for formation of a silica-based coating film using the application liquid 有权
标题翻译：应用液体和使用该涂布液形成二氧化硅基涂膜的方法
公开(公告)号：US08323745B2
公开(公告)日：2012-12-04
申请号：US12748146
申请日：2010-03-26
申请人： Tokonori Yamadaya , Kiyoshi Ishikawa , Atsushi Sawano
发明人： Tokonori Yamadaya , Kiyoshi Ishikawa , Atsushi Sawano
IPC分类号： B05D3/02
CPC分类号： C03C17/25 , C09D183/04 , C08K5/205
摘要： An application liquid capable of forming a dense silica-based coating film even when embedded into a fine groove, and a method for formation of a silica-based coating film using the application liquid are provided. An application liquid is used including (A) a siloxane polymer, and (B) a base generator represented by the following general formula (I): wherein, R1 and R2 are a hydrocarbon group having 1 to 5 carbon atoms and which may be the same or different; or one of R1 and R2 is a hydrogen atom and the other is a hydrocarbon group having 1 to 5 carbon atoms; when R1 and R2 are both a hydrocarbon group, these may bind to one another to form a ring structure; R3 is a linking group; and R4 is a condensed ring.
摘要翻译：提供即使嵌入微细沟槽也能够形成致密二氧化硅系涂膜的涂布液，以及使用该涂布液形成二氧化硅系涂膜的方法。使用包含（A）硅氧烷聚合物和（B）由以下通式（I）表示的碱发生剂的应用液：其中，R 1和R 2是具有1至5个碳原子的烃基，并且可以是相同或不同; R 1和R 2中的一个为氢原子，另一个为碳原子数为1〜5的烃基; 当R1和R2都是烃基时，它们可以彼此结合形成环结构; R3是连接基团; R4是稠环。

9. 发明授权

US07969343B2 Successive approximation analog-digital converter circuit using capacitance array 有权
标题翻译：使用电容阵列的逐次近似模数转换电路
公开(公告)号：US07969343B2
公开(公告)日：2011-06-28
申请号：US12685438
申请日：2010-01-11
申请人： Kiyoshi Ishikawa
发明人： Kiyoshi Ishikawa
IPC分类号： H03M1/12
CPC分类号： H03M1/0604 , H03M1/468 , H03M1/804
摘要： An analog-to-digital converter circuit includes: a capacitor array including a plurality of first capacitors, each having a first terminal connecting to a common node and having a capacitance represented by the nth power of 2 (2n) on the basis of the smallest of the capacitances of the first capacitors=1; a second capacitor for contributing to attenuation of the voltage on the common node; a switch array, each switch of the switch array supplying and disconnecting one of a first reference voltage, a second reference voltage, and the voltage of an input signal to and from a second terminal of an associated one of the first capacitors; a second switch supplying and disconnecting a third reference voltage to and from the common node; a comparator comparing a voltage on the common node with the third reference voltage; and a control circuit controlling the first switches and the second switch.
摘要翻译：一种模拟 - 数字转换器电路包括：电容器阵列，包括多个第一电容器，每个第一电容器具有连接到公共节点的第一端子，并且具有基于最小的第二电容器的第一电容器的电容= 1; 用于有助于衰减公共节点上的电压的第二电容器; 开关阵列的每个开关，将第一参考电压，第二参考电压和与第一电容器中相关联的一个的第二端子的输入信号的电压中的一个提供和断开; 向所述公共节点提供和断开第三参考电压的第二开关; 比较公共节点上的电压与第三参考电压的比较器; 以及控制所述第一开关和所述第二开关的控制电路。

10. 发明申请

US20100301853A1 POLARIZING NUCLEI IN SOLIDS VIA SPIN TRANSFER FROM AN OPTICALLY-PUMPED ALKALI VAPOR 有权
标题翻译：通过从光学抽吸的碱性蒸气中转移的固体中的极化核
公开(公告)号：US20100301853A1
公开(公告)日：2010-12-02
申请号：US12439846
申请日：2007-09-05
申请人： William Happer , Kiyoshi Ishikawa , Brian Patton , Yuan-Yu Jau
发明人： William Happer , Kiyoshi Ishikawa , Brian Patton , Yuan-Yu Jau
IPC分类号： G01R33/44
CPC分类号： G01R33/282 , G01N24/081 , G01R33/4641 , G01R33/5601
摘要： The present invention relates to a method and system for polarizing a solid compound of interest via spin transfer from an optically-pumped alkali vapor. In one embodiment, the method provides a cell which contains a solid compound as well as pure alkali metal and some amount of buffer gas. The cell is heated to vaporize some of the pure alkali. Resonant laser light is passed through the cell to polarize the atomic vapor, a process known as “optical pumping.” Optical pumping can transfer order from photons to atoms, causing a buildup of vapor atoms in one angular momentum state. This vapor polarization is then transferred through the surface of the solid compound in order to polarize the nuclei in the bulk of the compound. This can produce nuclear polarizations in the sample many times larger than the limit set by thermal equilibrium. The method can be used in nuclear magnetic resonance (NMR) or magnetic resonance imaging (MRI).
摘要翻译：本发明涉及一种通过旋光转移从光泵浦的碱蒸气偏振感兴趣的固体化合物的方法和系统。在一个实施方案中，该方法提供了含有固体化合物以及纯碱金属和一定量缓冲气体的电池。将电解槽加热以蒸发一些纯碱。谐振激光通过电池以使原子蒸气偏振，一种称为“光泵浦”的过程。光泵浦可以将光子从原子转移到原子，从而在一个角动量状态下形成蒸气原子。然后将该蒸气极化转移通过固体化合物的表面，以使化合物的主体中的核极化。这可以在样品中产生比通过热平衡设定的极限多许多倍的核极化。该方法可用于核磁共振（NMR）或磁共振成像（MRI）。

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