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1. 发明授权

US08891023B2 Display device and radio transmission control method 有权
标题翻译：显示装置和无线电传输控制方法
公开(公告)号：US08891023B2
公开(公告)日：2014-11-18
申请号：US12561538
申请日：2009-09-17
申请人： Naoki Hasegawa , Yoshinori Ota , Kaoru Kamiyama , Masanobu Kimoto , Hiroshige Hayakawa , Hideyuki Yoshimura , Masayuki Miyamoto , Takeshi Ono , Atsuro Hirakawa , Mari Sasaki , Akihiro Shironouchi , Kazuya Shimomura , Yuji Anami , Masato Hirose
发明人： Naoki Hasegawa , Yoshinori Ota , Kaoru Kamiyama , Masanobu Kimoto , Hiroshige Hayakawa , Hideyuki Yoshimura , Masayuki Miyamoto , Takeshi Ono , Atsuro Hirakawa , Mari Sasaki , Akihiro Shironouchi , Kazuya Shimomura , Yuji Anami , Masato Hirose
IPC分类号： H04N5/44 , H04N21/442 , H04N5/765 , H04N21/4363 , H04N21/443 , G08C17/02
CPC分类号： H04N5/4401 , G08C17/02 , H04N5/765 , H04N21/43637 , H04N21/44227 , H04N21/4436
摘要： A display device includes: a monitor and receiving set having a video signal receiving section, a display section, an image quality control section, a first control signal transceiver, and a first control section; and a control and transmission set having a television broadcast receiving section, a video signal input section, a video signal transmitting section, a second control signal transceiver, a key input section, and a second control section. The Power consumption of a first radio transmission path formed by the video signal transmitting section and the video signal receiving section is larger than that of a second radio transmission path formed by the first and second control signal transceivers. A control signal for a user interface is communicated by the first and second control signal transceivers. Only the second radio transmission path of the first and second radio transmission paths is communicable in a standby state.
摘要翻译：显示装置包括：具有视频信号接收部分，显示部分，图像质量控制部分，第一控制信号收发器和第一控制部分的监视器和接收装置; 以及具有电视广播接收部分，视频信号输入部分，视频信号发送部分，第二控制信号收发器，键输入部分和第二控制部分的控制和发送组。由视频信号发送部分和视频信号接收部分形成的第一无线电传输路径的功耗大于由第一和第二控制信号收发器形成的第二无线传输路径的功耗。用于用户接口的控制信号由第一和第二控制信号收发器传送。只有第一和第二无线电传输路径的第二无线电传输路径在待机状态下可通信。

2. 发明申请

US20100097530A1 DISPLAY DEVICE AND RADIO TRANSMISSION CONTROL METHOD 有权
标题翻译：显示设备和无线电传输控制方法
公开(公告)号：US20100097530A1
公开(公告)日：2010-04-22
申请号：US12561538
申请日：2009-09-17
申请人： Naoki HASEGAWA , Yoshinori Ota , Kaoru Kamiyama , Masanobu Kimoto , Hiroshige Hayakawa , Hideyuki Yoshimura , Masayuki Miyamoto , Takeshi Ono , Atsuro Hirakawa , Mari Sasaki , Akihiro Shironouchi , Kazuya Shimomura , Yuji Anami , Masato Hirose
发明人： Naoki HASEGAWA , Yoshinori Ota , Kaoru Kamiyama , Masanobu Kimoto , Hiroshige Hayakawa , Hideyuki Yoshimura , Masayuki Miyamoto , Takeshi Ono , Atsuro Hirakawa , Mari Sasaki , Akihiro Shironouchi , Kazuya Shimomura , Yuji Anami , Masato Hirose
IPC分类号： H04N5/50 , H04N5/44
CPC分类号： H04N5/4401 , G08C17/02 , H04N5/765 , H04N21/43637 , H04N21/44227 , H04N21/4436
摘要： A display device includes: a monitor and receiving set having a video signal receiving section, a display section, an image quality control section, a first control signal transceiver, and a first control section; and a control and transmission set having a television broadcast receiving section, a video signal input section, a video signal transmitting section, a second control signal transceiver, a key input section, and a second control section. The Power consumption of a first radio transmission path formed by the video signal transmitting section and the video signal receiving section is larger than that of a second radio transmission path formed by the first and second control signal transceivers. A control signal for a user interface is communicated by the first and second control signal transceivers. Only the second radio transmission path of the first and second radio transmission paths is communicable in a standby state.
摘要翻译：显示装置包括：具有视频信号接收部分，显示部分，图像质量控制部分，第一控制信号收发器和第一控制部分的监视器和接收装置; 以及具有电视广播接收部分，视频信号输入部分，视频信号发送部分，第二控制信号收发器，键输入部分和第二控制部分的控制和发送组。由视频信号发送部分和视频信号接收部分形成的第一无线电传输路径的功耗大于由第一和第二控制信号收发器形成的第二无线传输路径的功耗。用于用户接口的控制信号由第一和第二控制信号收发器传送。只有第一和第二无线电传输路径的第二无线电传输路径在待机状态下可通信。

3. 发明授权

US06191492B1 Electronic device including a densified region 失效
标题翻译：包括致密区域的电子设备
公开(公告)号：US06191492B1
公开(公告)日：2001-02-20
申请号：US08161859
申请日：1993-12-06
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
IPC分类号： H01L2328
CPC分类号： H01L24/48 , H01L23/3135 , H01L23/49586 , H01L24/45 , H01L2224/05624 , H01L2224/29339 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/8592 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01045 , H01L2924/01047 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/00014 , H01L2924/05042 , H01L2924/00 , H01L2924/00012
摘要： An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.
摘要翻译：一种电子设备，包括具有框架，金属引线和接合结构中的电子部件的基板，以及在所述基板上形成的有机树脂的模制件，其中所述有机树脂的表面设置有硬化防水或碳质膜或其中有机树脂表面的孔被填充在惰性气体如氩气中，因为用惰性气体等离子体处理树脂表面，从而防止杂质通过孔进入有机树脂。

4. 发明授权

US5096851A Method of packaging an electronic device using a common holder to carry the device in both a CVD and molding step 失效
标题翻译：使用通用保持器将设备携带在CVD和成型步骤中的电子设备的方法
公开(公告)号：US5096851A
公开(公告)日：1992-03-17
申请号：US572331
申请日：1990-08-24
申请人： Shunpei Yamazaki , Noriya Ishida , Mitsunori Sakama , Mari Sasaki
发明人： Shunpei Yamazaki , Noriya Ishida , Mitsunori Sakama , Mari Sasaki
IPC分类号： H01L21/56 , H01L23/31
CPC分类号： H01L23/3135 , H01L21/56 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/8592 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01082 , H01L2924/14 , H01L2924/181 , H01L2924/19041
摘要： An improved electric device and manufacturing method for the same are described. The device is for example an IC chip clothed in moulding. In advance of the moulding process, the IC chip is coated with silicon nitride in order to protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out by plasma CVD. Particularly, an AC voltage is applied to the IC chip during deposition for the purpose of obtaining an excellent property of the silicon nitride coating.

5. 发明申请

US20120164743A1 MICROCHANNEL CHIP AND METHOD FOR GAS-LIQUID PHASE SEPARATION USING SAME 有权
标题翻译：使用相同的气相液相分离的微通道芯片和方法
公开(公告)号：US20120164743A1
公开(公告)日：2012-06-28
申请号：US13262103
申请日：2010-03-31
申请人： Arata Aota , Yuko Kihira , Mari Sasaki , Takehiko Kitamori , Kazuma Mawatari
发明人： Arata Aota , Yuko Kihira , Mari Sasaki , Takehiko Kitamori , Kazuma Mawatari
IPC分类号： G01N21/78 , G01N1/18 , B01D53/00
CPC分类号： B01D19/0031 , B01D53/22 , B01D69/02 , B01D71/36 , B01D2325/02 , B01D2325/04 , B01D2325/38 , B01L3/502753 , B01L5/00 , B01L2300/0816 , B01L2400/0478 , G01N35/08 , Y10T436/17 , Y10T436/173845 , Y10T436/175383 , Y10T436/25375
摘要： A microchannel chip having a microchannel formed in a substrate and a gas-liquid phase separation microchannel whose upper part is covered with a porous film, the gas-liquid phase separation microchannel being connected to the downstream end of the microchannel and having a depth of 10 μm to 100 μm. Also, a gas-liquid phase separation method which is a method for separating a liquid-phase flow from a two-phase flow flowing through a microchannel by removing a gas phase, the two-phase flow composed of the gas phase and the liquid phase, which liquid phase flows in the periphery of the above-described microchannel and which gas phase flows interiorly of the liquid-phase flow.
摘要翻译：一种具有在基板上形成的微通道的微通道芯片和其上部被多孔膜覆盖的气液相分离微通道，该气液相分离微通道与微通道的下游端连接，深度为10 μm至100μm。另外，气相分离方法是通过除去气相从流过微通道的两相流中分离液相流的方法，由气相和液相组成的两相流该液相在上述微通道的周围流动，气相在液相流的内部流动。

6. 发明申请

US20120025173A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING MULTILAYER SEMICONDUCTOR THIN FILM 有权
标题翻译：半导体器件及其制造方法以及形成多层半导体薄膜的方法
公开(公告)号：US20120025173A1
公开(公告)日：2012-02-02
申请号：US12848732
申请日：2010-08-02
申请人： Norihito Kobayashi , Mari Sasaki , Takahiro Ohe
发明人： Norihito Kobayashi , Mari Sasaki , Takahiro Ohe
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0062 , H01L51/0003 , H01L51/0073 , H01L51/0516 , H01L51/052 , H01L51/0558
摘要： A method of manufacturing a semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of R3 and R9 represents a substituent other than hydrogen.
摘要翻译：提供一种制造半导体器件的方法，该半导体器件包括设置在基底上的栅电极，栅极绝缘层，源/漏电极和沟道形成区域。该方法包括以下步骤：通过使用包含以下结构式（1）表示的聚合绝缘材料和二氧杂蒽化合物的混合溶液形成薄膜; 随后干燥该薄膜以诱发聚合物绝缘材料和二氧杂蒽化合物的相分离，由此从二氧杂蒽化合物的聚合物绝缘材料和沟道形成区形成栅极绝缘层：其中R3和R9中的至少一个表示除氢以外的取代基。

7. 发明授权

US06756670B1 Electronic device and its manufacturing method 失效
标题翻译：电子器件及其制造方法
公开(公告)号：US06756670B1
公开(公告)日：2004-06-29
申请号：US09698055
申请日：2000-10-30
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
IPC分类号： H01L2306
CPC分类号： H01L23/49586 , H01L21/56 , H01L23/29 , H01L23/3135 , H01L24/45 , H01L24/48 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2224/8592 , H01L2924/01007 , H01L2924/0101 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01029 , H01L2924/01079 , H01L2924/181 , H01L2924/00014 , H01L2924/05442 , H01L2924/05042 , H01L2924/00012
摘要： An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.
摘要翻译：一种电子设备，包括具有框架，金属引线和接合结构中的电子部件的基板，以及在所述基板上形成的有机树脂的模制件，其中所述有机树脂的表面设置有硬化防水或碳质膜或其中有机树脂表面的孔被填充在惰性气体如氩气中，因为用惰性气体等离子体处理树脂表面，从而防止杂质通过孔进入有机树脂。

8. 发明授权

US08815604B2 Microchannel chip and method for gas-liquid phase separation using same 有权
标题翻译：微通道芯片及使用其的气液相分离方法
公开(公告)号：US08815604B2
公开(公告)日：2014-08-26
申请号：US13262103
申请日：2010-03-31
申请人： Arata Aota , Yuko Kihira , Mari Sasaki , Takehiko Kitamori , Kazuma Mawatari
发明人： Arata Aota , Yuko Kihira , Mari Sasaki , Takehiko Kitamori , Kazuma Mawatari
IPC分类号： B01D53/00
CPC分类号： B01D19/0031 , B01D53/22 , B01D69/02 , B01D71/36 , B01D2325/02 , B01D2325/04 , B01D2325/38 , B01L3/502753 , B01L5/00 , B01L2300/0816 , B01L2400/0478 , G01N35/08 , Y10T436/17 , Y10T436/173845 , Y10T436/175383 , Y10T436/25375
摘要： A microchannel chip having a microchannel formed in a substrate and a gas-liquid phase separation microchannel whose upper part is covered with a porous film, the gas-liquid phase separation microchannel being connected to the downstream end of the microchannel and having a depth of 10 μm to 100 μm. Also, a gas-liquid phase separation method which is a method for separating a liquid-phase flow from a two-phase flow flowing through a microchannel by removing a gas phase, the two-phase flow composed of the gas phase and the liquid phase, which liquid phase flows in the periphery of the above-described microchannel and which gas phase flows interiorly of the liquid-phase flow.
摘要翻译：一种具有在基板上形成的微通道的微通道芯片和其上部被多孔膜覆盖的气液相分离微通道，该气液相分离微通道与微通道的下游端连接，深度为10 μm至100μm。另外，气相分离方法是通过除去气相从流过微通道的两相流中分离液相流的方法，由气相和液相组成的两相流该液相在上述微通道的周围流动，气相在液相流的内部流动。

9. 发明授权

US08445912B2 Thin film transistor structure, method of manufacturing the same, and electronic device 有权
标题翻译：薄膜晶体管结构，制造方法及电子器件
公开(公告)号：US08445912B2
公开(公告)日：2013-05-21
申请号：US13028604
申请日：2011-02-16
申请人： Iwao Yagi , Hideki Ono , Mari Sasaki
发明人： Iwao Yagi , Hideki Ono , Mari Sasaki
IPC分类号： H01L29/10
CPC分类号： H01L29/66742 , G02F1/1368 , H01L27/1225 , H01L27/1285 , H01L27/1292 , H01L27/283 , H01L29/7869
摘要： A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.
摘要翻译：提供了容易制造的高性能薄膜晶体管结构。薄膜晶体管结构包括：第一电极; 第二和第三电极以与第一电极的层级不同的层级彼此分开; 分别连接到第一，第二和第三电极的第一，第二和第三布线; 主堆叠体，设置成与第一电极相对，在第一电极和第二和第三电极之间具有层间绝缘层; 以及包括绝缘层和半导体层的子堆叠体，在第一和第二布线重叠的位置和/或第二布线之间，在第一布线和第二布线之间设置有与第一布线相对的第一布线和层间绝缘层，或者在第一和第三布线重叠的位置之间的第一和第三布线之间。

10. 发明授权

US5185179A Plasma processing method and products thereof 失效
标题翻译：等离子体处理方法及其制品
公开(公告)号：US5185179A
公开(公告)日：1993-02-09
申请号：US417311
申请日：1989-10-05
申请人： Shunpei Yamazaki , Shigenori Hayashi , Noriya Ishida , Mari Sasaki , Junichi Takeyama , Kenji Itou , Masahiro Kojima , Masaya Kadono
发明人： Shunpei Yamazaki , Shigenori Hayashi , Noriya Ishida , Mari Sasaki , Junichi Takeyama , Kenji Itou , Masahiro Kojima , Masaya Kadono
IPC分类号： C23C16/26 , C23C16/34
CPC分类号： C23C16/345 , C23C16/26
摘要： Carbonaceous films are coated on a surface by chemical vapor reation. In advance of the deposition of carbonaceous film, a silicon nitride film as coated on the surface to prevent interdiffusion between the carbonaceous film and the underlying surface.

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