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1. 发明申请

US20120034723A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：显示装置及其制造方法及其半导体器件及其制造方法
公开(公告)号：US20120034723A1
公开(公告)日：2012-02-09
申请号：US13276907
申请日：2011-10-19
申请人： Iwao Yagi
发明人： Iwao Yagi
IPC分类号： H01L33/08
CPC分类号： G02F1/133555 , G02F1/133305 , G02F1/133345 , G02F2001/136218 , H01L27/283
摘要： A method of forming a display device including source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain electrodes and the pixel electrode are formed on the substrate and in contact with each other. The insulating partition wall layer is formed on the substrate and provided with a first opening extending to between the source electrode and the drain electrode and a second opening formed on the pixel electrode and extending to the pixel electrode. The channel-region semiconductor layer is formed on the bottom of the first opening. The insulating film is formed on the partition wall layer so as to cover the first opening including the channel-region semiconductor layer. The oriented film covers the first opening from above the insulating film and the second opening from the pixel electrode.
摘要翻译：一种在基板上形成包括源极/漏极的显示装置的方法，像素电极，绝缘分隔壁层，沟道区半导体层。源极/漏极和像素电极形成在基板上并且彼此接触。绝缘分隔壁层形成在基板上，并且设置有延伸到源电极和漏电极之间的第一开口和形成在像素电极上并延伸到像素电极的第二开口。沟道区半导体层形成在第一开口的底部。绝缘膜形成在隔壁层上以覆盖包括沟道区半导体层的第一开口。取向膜从绝缘膜上方覆盖第一开口，从像素电极覆盖第二开口。

2. 发明申请

US20090309103A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：显示装置及其制造方法及其半导体器件及其制造方法
公开(公告)号：US20090309103A1
公开(公告)日：2009-12-17
申请号：US12485582
申请日：2009-06-16
申请人： Iwao Yagi
发明人： Iwao Yagi
IPC分类号： H01L29/786 , H01L33/00 , H01L21/336
CPC分类号： G02F1/133555 , G02F1/133305 , G02F1/133345 , G02F2001/136218 , H01L27/283
摘要： A display device includes source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain electrodes and the pixel electrode are formed on the substrate and in contact with each other. The insulating partition wall layer is formed on the substrate and provided with a first opening extending to between the source electrode and the drain electrode and a second opening formed on the pixel electrode and extending to the pixel electrode. The channel-region semiconductor layer is formed on the bottom of the first opening. The insulating film is formed on the partition wall layer so as to cover the first opening including the channel-region semiconductor layer. The oriented film covers the first opening from above the insulating film and the second opening from the pixel electrode.
摘要翻译：显示装置包括在基板上的源/漏电极，像素电极，绝缘分隔壁层，沟道区半导体层。源极/漏极和像素电极形成在基板上并且彼此接触。绝缘分隔壁层形成在基板上，并且设置有延伸到源电极和漏电极之间的第一开口和形成在像素电极上并延伸到像素电极的第二开口。沟道区半导体层形成在第一开口的底部。绝缘膜形成在隔壁层上以覆盖包括沟道区半导体层的第一开口。取向膜从绝缘膜上方覆盖第一开口，从像素电极覆盖第二开口。

3. 发明授权

US09097945B2 Display device and electronic unit 有权
标题翻译：显示设备和电子单元
公开(公告)号：US09097945B2
公开(公告)日：2015-08-04
申请号：US13546719
申请日：2012-07-11
申请人： Iwao Yagi
发明人： Iwao Yagi
IPC分类号： G06F3/038 , G09G5/00 , G02F1/1345
CPC分类号： H01L27/124 , G02F1/1345 , G02F1/13452 , G02F2201/42
摘要： A display device includes: a substrate including a display region and a peripheral region; a first wiring provided on a front face of the substrate; and a second wiring provided on a rear face of the substrate and electrically connected to the first wiring.
摘要翻译：一种显示装置，包括：具有显示区域和周边区域的基板; 设置在所述基板的正面上的第一布线; 以及设置在所述基板的背面上并电连接到所述第一布线的第二布线。

4. 发明授权

US08405073B2 Organic thin film transistor with a protective layer between source and drain electrodes and electronic device 有权
标题翻译：有机薄膜晶体管，在源极和漏极之间具有保护层和电子器件
公开(公告)号：US08405073B2
公开(公告)日：2013-03-26
申请号：US13029383
申请日：2011-02-17
申请人： Hideki Ono , Akihiro Nomoto , Iwao Yagi
发明人： Hideki Ono , Akihiro Nomoto , Iwao Yagi
IPC分类号： H01L51/10
CPC分类号： H01L51/10
摘要： A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.
摘要翻译：提供能够稳定地获得良好性能的薄膜晶体管。薄膜晶体管包括有机半导体层以及形成在有机半导体层上的保护层以及源电极和漏电极。保护层至少设置在源电极和漏电极之间的区域中。

5. 发明授权

US08383468B2 Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof 失效
标题翻译：显示装置及其制造方法以及半导体装置及其制造方法
公开(公告)号：US08383468B2
公开(公告)日：2013-02-26
申请号：US13440648
申请日：2012-04-05
申请人： Iwao Yagi
发明人： Iwao Yagi
IPC分类号： H01L21/48 , H01L21/00 , H01L21/4763
CPC分类号： G02F1/133555 , G02F1/133305 , G02F1/133345 , G02F2001/136218 , H01L27/283
摘要： A method of forming a display device including source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. Source/drain electrodes of a thin-film transistor are formed on the substrate, while a pixel electrode is connected to the source/drain electrodes. The insulating partition wall layer is formed on the substrate, where the partition wall layer has a first opening extending to between the source electrode and the drain electrode. Furthermore, a channel-region semiconductor layer is formed by depositing a semiconductor layer over the partition wall layer. The channel-region semiconductor layer is on the bottom of the first opening to be separate from a upper part of the partition wall layer.
摘要翻译：一种在基板上形成包括源极/漏极的显示装置的方法，像素电极，绝缘分隔壁层，沟道区半导体层。在基板上形成薄膜晶体管的源极/漏极，而像素电极连接到源极/漏极。绝缘分隔壁层形成在基板上，其中分隔壁层具有延伸到源电极和漏电极之间的第一开口。此外，通过在分隔壁层上沉积半导体层来形成沟道区半导体层。沟道区半导体层位于第一开口的底部，与分隔壁层的上部分离。

6. 发明授权

US08168983B2 Semiconductor device, method for manufacturing semiconductor device, display device, and method for manufacturing display device 失效
标题翻译：半导体装置，半导体装置的制造方法，显示装置以及显示装置的制造方法
公开(公告)号：US08168983B2
公开(公告)日：2012-05-01
申请号：US12667972
申请日：2008-07-01
申请人： Iwao Yagi
发明人： Iwao Yagi
IPC分类号： H01L27/14 , H01L21/00 , H01L21/84
CPC分类号： H01L51/0541 , G02F1/136227 , G02F2001/13685 , G02F2202/02 , H01L27/3246 , H01L29/66742
摘要： A semiconductor device 19-1 includes a source electrode 3s and a drain electrode 3d disposed on a substrate 1, an insulating partition wall 5, which has a first opening 5a reaching end portions of the source electrode 3s and the drain electrode 3d and between these electrodes 3s-3d and which is disposed on the substrate 1, a channel portion semiconductor layer 7a, which is composed of a semiconductor layer 7 formed from above the partition wall 5 and which is disposed on the bottom portion of the first opening 5a while being separated from the semiconductor 7 on the partition wall 5, a gate insulating film 9 formed all over the surface from above the semiconductor layer 7 including the channel portion semiconductor layer 7a, and a gate electrode 11a disposed on the gate insulating film 9 while overlapping the channel portion semiconductor layer 7a.
摘要翻译：半导体器件19-1包括设置在基板1上的源电极3s和漏电极3d，绝缘分隔壁5，其具有到达源电极3s和漏电极3d的端部的第一开口5a和它们之间电极3s-3d，其设置在基板1上，沟道部分半导体层7a由半导体层7组成，半导体层7由分隔壁5的上方形成，并且设置在第一开口5a的底部，同时与分隔壁5上的半导体7分离，从包括沟道部分半导体层7a的半导体层7的上方形成的整个表面上形成的栅极绝缘膜9和设置在栅极绝缘膜9上的栅电极11a，沟道部半导体层7a。

7. 发明授权

US08168484B2 Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof 失效
标题翻译：显示装置及其制造方法以及半导体装置及其制造方法
公开(公告)号：US08168484B2
公开(公告)日：2012-05-01
申请号：US13276907
申请日：2011-10-19
申请人： Iwao Yagi
发明人： Iwao Yagi
IPC分类号： H01L21/84 , H01L21/00 , H01L21/4763
CPC分类号： G02F1/133555 , G02F1/133305 , G02F1/133345 , G02F2001/136218 , H01L27/283
摘要： A method of forming a display device including source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain electrodes and the pixel electrode are formed on the substrate and in contact with each other. The insulating partition wall layer is formed on the substrate and provided with a first opening extending to between the source electrode and the drain electrode and a second opening formed on the pixel electrode and extending to the pixel electrode. The channel-region semiconductor layer is formed on the bottom of the first opening. The insulating film is formed on the partition wall layer so as to cover the first opening including the channel-region semiconductor layer. The oriented film covers the first opening from above the insulating film and the second opening from the pixel electrode.
摘要翻译：一种在基板上形成包括源极/漏极的显示装置的方法，像素电极，绝缘分隔壁层，沟道区半导体层。源极/漏极和像素电极形成在基板上并且彼此接触。绝缘分隔壁层形成在基板上，并且设置有延伸到源电极和漏电极之间的第一开口和形成在像素电极上并延伸到像素电极的第二开口。沟道区半导体层形成在第一开口的底部。绝缘膜形成在隔壁层上以覆盖包括沟道区半导体层的第一开口。取向膜从绝缘膜上方覆盖第一开口，从像素电极覆盖第二开口。

8. 发明申请

US20110215406A1 THIN FILM TRANSISTOR AND ELECTRONIC DEVICE 有权
标题翻译：薄膜晶体管和电子器件
公开(公告)号：US20110215406A1
公开(公告)日：2011-09-08
申请号：US13029383
申请日：2011-02-17
申请人： Hideki Ono , Akihiro Nomoto , Iwao Yagi
发明人： Hideki Ono , Akihiro Nomoto , Iwao Yagi
IPC分类号： H01L51/10
CPC分类号： H01L51/10
摘要： A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.
摘要翻译：提供能够稳定地获得良好性能的薄膜晶体管。薄膜晶体管包括有机半导体层以及形成在有机半导体层上的保护层以及源电极和漏电极。保护层至少设置在源电极和漏极之间的区域中。

9. 发明授权

US07989955B2 Semiconductor device, electronic device, and method of producing semiconductor device 有权
标题翻译：半导体装置，电子装置以及半导体装置的制造方法
公开(公告)号：US07989955B2
公开(公告)日：2011-08-02
申请号：US12108718
申请日：2008-04-24
申请人： Iwao Yagi
发明人： Iwao Yagi
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76804 , H01L21/76831 , H01L51/0021 , H01L51/0545 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first insulating film that includes a first opening reaching a substrate and that is provided on the substrate, a second insulating film that includes a second opening reaching the substrate through the first opening of the first insulating film and that covers the first insulating film, and a conductive pattern that is provided on the second insulating film so as to be in contact with the substrate through the second opening of the second insulating film.
摘要翻译：一种半导体器件包括：第一绝缘膜，其包括到达基板的第一开口，并且设置在基板上;第二绝缘膜，其包括通过第一绝缘膜的第一开口到达基板的第二开口，并且覆盖第一绝缘膜绝缘膜和通过第二绝缘膜的第二开口设置在第二绝缘膜上以与基板接触的导电图案。

10. 发明申请

US20100176381A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 审中-公开
标题翻译：半导体器件和显示器件
公开(公告)号：US20100176381A1
公开(公告)日：2010-07-15
申请号：US12522053
申请日：2007-12-26
申请人： Iwao Yagi , Akira Yumoto
发明人： Iwao Yagi , Akira Yumoto
IPC分类号： H01L51/10 , H01L33/02
CPC分类号： H01L27/3272 , G02F1/1368 , G02F2001/136218 , G02F2202/02 , H01L27/283 , H01L27/3274 , H01L51/0545
摘要： It is an object to provide a display device in which an operational characteristic in a bottom gate type organic semiconductor thin film transistor can be maintained to a stable characteristic without receiving an influence of an electrode provided on an upper layer thereof, and a display with a high reliability can be realized by using this as a driver element. A bottom gate type thin film transistor Tr provided on a substrate 1 and a pixel electrode a provided on an upper part of the thin film transistor Tr via a protection film 11 and an inter-layer insulating film 15 are provided, and between the thin film transistor Tr and the pixel electrode a, a conductive shield layer 13a is arranged while an insulation property is maintained between these.
摘要翻译：本发明的目的是提供一种显示装置，其中底栅型有机半导体薄膜晶体管的操作特性可以保持在稳定的特性，而不会受到设置在其上层上的电极的影响，并且具有通过将其用作驱动元件，可以实现高可靠性。设置在基板1上的底栅型薄膜晶体管Tr和经由保护膜11和层间绝缘膜15设置在薄膜晶体管Tr的上部的像素电极a，并且在薄膜晶体管Tr和像素电极a，在它们之间保持绝缘性的同时布置导电屏蔽层13a。

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