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1. 发明申请

WO2008139392A3 DC-TO-DC CONVERTER COMPRISING A RECONFIGURABLE CAPACITOR UNIT 审中-公开
标题翻译：包含可重构电容单元的DC-DC转换器
公开(公告)号：WO2008139392A3
公开(公告)日：2009-02-05
申请号：PCT/IB2008051823
申请日：2008-05-08
申请人： NXP BV , KLOOTWIJK JOHAN H , BERGVELD HENDRIK J , ROOZEBOOM FREDDY , REEFMAN DERK , RUIGROK JAAP
发明人： KLOOTWIJK JOHAN H , BERGVELD HENDRIK J , ROOZEBOOM FREDDY , REEFMAN DERK , RUIGROK JAAP
IPC分类号： H02M3/07 , H01L27/08
CPC分类号： H01L27/0805 , H02M3/07
摘要： The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A switching unit is provided that comprises a plurality of switching elements electrically interconnected between different capacitor-electrode layers of the trench filling. A control unit is connected with the switching unit and configured to generate and provide to the switching unit respective control signals for forming a respective one of a plurality of multi-capacitor configurations using the capacitor-electrode layers of the trench filling.
摘要翻译：本发明涉及一种包括半导体衬底中的沟槽的可配置沟槽多电容器器件。沟槽的横向延伸超过10微米，沟槽填充物包括多个至少四个导电电容器电极层。提供一种开关单元，其包括在沟槽填充物的不同电容器 - 电极层之间电连接的多个开关元件。控制单元与开关单元连接，并且被配置为使用沟槽填充的电容器电极层，生成并向开关单元提供各自的控制信号，以形成多个多电容器配置中的相应一个。

2. 发明申请

WO2007054858A3 INTEGRATED CAPACITOR ARRANGEMENT FOR ULTRAHIGH CAPACITANCE VALUES 审中-公开
标题翻译：集成电容器布置ULTRAHIGH电容值
公开(公告)号：WO2007054858A3
公开(公告)日：2007-09-27
申请号：PCT/IB2006054063
申请日：2006-11-02
申请人： NXP BV , ROOZEBOOM FREDDY , KLOOTWIJK JOHAN H , KEMMEREN ANTONIUS L A M , REEFMAN DERK , VERHOEVEN JOHANNES F C M
发明人： ROOZEBOOM FREDDY , KLOOTWIJK JOHAN H , KEMMEREN ANTONIUS L A M , REEFMAN DERK , VERHOEVEN JOHANNES F C M
IPC分类号： H01L21/02
CPC分类号： H01L28/91 , H01L27/0805 , H01L27/1087 , H01L29/945
摘要： The present invention relates to an electronic device (300) comprising at least one trench capacitor (302) that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence (308) of at least two dielectric layers (312, 316) and at least two electrically conductive layers (314, 318) is provided in the trench capacitor or on the pillar capacitor, such that the at least two electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least two dielectric layers. A set of internal contact pads (332, 334, 340) is provided, and each internal contact pad is connected with a respective one of the electrically conductive layers or with the substrate. By providing an individual internal contact pad for each of the electrically conductive layers, a range of switching opportunities is opened up that allows tuning the specific capacitance of the capacitor to a desired value. The electronic device of the invention thus provides a flexible trench-capacitor manufacturing platform for a multitude of combinations of electrically conductive layers with each other, or, when multiple trenches are used, between electrically conductive layers of different trench capacitors. On-chip applications such as a charge-pump circuit or a DC-to-DC voltage converter are claimed that benefit from the ultra-high capacitance density and the high breakdown voltage that can be achieved with the electronic device of the invention.
摘要翻译：电子设备技术领域本发明涉及一种电子设备（300），其包括至少一个也可采取反向结构形式的沟槽电容器（302），立柱电容器。至少两个电介质层（312,316）和至少两个导电层（314,318）的交替层序列（308）设置在所述沟槽电容器中或所述柱状电容器上，使得所述至少两个导电层通过至少两个电介质层中的相应电极彼此电隔离并且与衬底电隔离。提供一组内部接触焊盘（332,334,340），并且每个内部接触焊盘与相应的一个导电层或与基板连接。通过为每个导电层提供单独的内部接触焊盘，开启一定范围的切换机会，允许将电容器的比电容调谐到期望值。因此，本发明的电子器件为不同沟槽电容器的导电层之间的多个导电层的组合或多个沟槽组合提供了柔性的沟槽电容器制造平台。要求使用诸如电荷泵电路或DC-DC电压转换器的片上应用，其受益于本发明的电子器件可实现的超高电容密度和高击穿电压。

3. 发明申请

WO2007132423A3 ASSEMBLY, CHIP AND METHOD OF OPERATING 审中-公开
标题翻译：组装，芯片和操作方法
公开(公告)号：WO2007132423A3
公开(公告)日：2008-02-28
申请号：PCT/IB2007051821
申请日：2007-05-14
申请人： NXP BV , REEFMAN DERK , ROOZEBOOM FREDDY , KLOOTWIJK JOHAN H
发明人： REEFMAN DERK , ROOZEBOOM FREDDY , KLOOTWIJK JOHAN H
IPC分类号： H01L23/522 , H01L23/538 , H01L23/552 , H01L25/16 , H01L27/088
CPC分类号： H01L27/0805 , H01L23/3107 , H01L23/3128 , H01L23/4334 , H01L23/49575 , H01L23/5223 , H01L23/5227 , H01L23/642 , H01L23/645 , H01L25/16 , H01L2224/05571 , H01L2224/05573 , H01L2224/056 , H01L2224/16 , H01L2924/01087 , H01L2924/1461 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00014
摘要： The chip (100) comprises a network of trench capacitors (102) and an inductor (114), wherein the trench capacitors (102) are coupled in parallel with a pattern of interconnects (113A,B,..) that is designed so as to limit generation of eddy current induced by the inductor (114) in the interconnects (113A,B,..). This allows the use of the chip (100) as a portion of a DC-DC converter, that is integrated in an assembly of a first chip and this - second chip (100). The inductor of this integrated DC-DC converter may be defined elsewhere within the assembly.
摘要翻译：芯片（100）包括沟槽电容器（102）和电感器（114）的网络，其中沟槽电容器（102）与互连图案（113A，B，...）并联耦合，该图案被设计为以限制由互连（113A，B，...）中的电感器（114）感应的涡流的产生。这允许使用芯片（100）作为DC-DC转换器的一部分，其集成在第一芯片和该第二芯片（100）的组件中。该集成DC-DC转换器的电感器可以在组件内的其他地方定义。

4. 发明申请

WO2007054867A3 PRODUCING A COVERED THROUGH SUBSTRATE VIA USING A TEMPORARY CAP LAYER 审中-公开
标题翻译：通过使用临时盖层产生覆盖的基底
公开(公告)号：WO2007054867A3
公开(公告)日：2007-08-09
申请号：PCT/IB2006054082
申请日：2006-11-03
申请人： NXP BV , KLOOTWIJK JOHAN H , KEMMEREN ANTONIUS L A M , DEKKER RONALD , VAN GRUNSVEN ERIC C E , ROOZEBOOM FREDDY
发明人： KLOOTWIJK JOHAN H , KEMMEREN ANTONIUS L A M , DEKKER RONALD , VAN GRUNSVEN ERIC C E , ROOZEBOOM FREDDY
IPC分类号： H01L21/768
CPC分类号： H01L21/76898 , H01L21/764 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a method for producing a substrate with at least one covered via that electrically and preferably also thermally connects a first substrate side with an opposite second substrate side. The processing involves forming a trench on a the first substrate side remains and covering the trench with a permanent layer on top of a temporary, sacrificial cap-layer, which is decomposed in a thermal process step. The method of the invention provides alternative ways to remove decomposition products of the sacrificial cap-layer material without remaining traces or contamination even in the presence of the permanent layer. This is, according to a first aspect of the invention, achieved by providing the substrate trench with an overcoat layer that has holes. The holes in the overcoat layer leave room for the removal of the decomposition products of the cap-layer material. According to the second aspect of the invention, opening the covered trench from the second substrate side and allowing the cap-layer material to be removed through that opening provides a solution. Both methods of the present invention are based on the common idea of using a temporary cap-layer even in a situation where the substrate opening is permanently covered before the removal of the temporary cap-layer.
摘要翻译：本发明涉及一种用于制造具有至少一个覆盖过孔的基板的方法，所述至少一个覆盖过孔电且优选还将第一基板侧与相对的第二基板侧热连接。该处理包括在第一衬底侧上形成沟槽，并且在永久层上覆盖沟槽，该永久层位于在热处理步骤中分解的临时牺牲帽层的顶部上。本发明的方法提供了替代方法，即使在存在永久层的情况下也不会留下痕迹或污染物，以去除牺牲帽层材料的分解产物。根据本发明的第一方面，这是通过向衬底沟槽提供具有孔的覆盖层来实现的。覆盖层中的孔留下了去除覆盖层材料的分解产物的空间。根据本发明的第二方面，从第二衬底侧打开被覆盖的沟槽并允许通过该开口移除帽层材料提供了一种解决方案。本发明的两种方法都基于即使在去除临时盖层之前衬底开口被永久覆盖的情况下使用临时盖层的常见思想。

5. 发明申请

WO2006056964A2 ELECTROCHEMICAL ENERGY SOURCE, ELECTRONIC MODULE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING OF SAID ENERGY SOURCE 审中-公开
标题翻译：电化学能源，电子模块，电子设备及制造能源的方法
公开(公告)号：WO2006056964A2
公开(公告)日：2006-06-01
申请号：PCT/IB2005053913
申请日：2005-11-25
申请人： KONINKL PHILIPS ELECTRONICS NV , ROOZEBOOM FREDDY , NOTTEN PETER , KEMMEREN ANTONIUS L A M , KLOOTWIJK JOHAN H
发明人： ROOZEBOOM FREDDY , NOTTEN PETER , KEMMEREN ANTONIUS L A M , KLOOTWIJK JOHAN H
IPC分类号： H01M4/58 , H01M10/36
CPC分类号： H01M4/58 , H01G9/15 , H01M2/10 , H01M6/40 , H01M6/48 , H01M10/044 , H01M10/0562
摘要： The invention relates to an electrochemical energy source comprising at least one assembly of: a first electrode, a second electrode, and an intermediate solid-state electrolyte separating said first electrode and said second electrode. The invention also relates to an electronic module provided with such an electrochemical energy source. The invention further relates to an electronic device provided with such an electrochemical energy source. Moreover, the invention relates to a method of manufacturing of such an electrochemical energy source.
摘要翻译：本发明涉及一种电化学能源，其包括至少一个组件，其包括：第一电极，第二电极和分离所述第一电极和所述第二电极的中间固态电解质。本发明还涉及一种具有这种电化学能源的电子模块。本发明还涉及一种具有这种电化学能源的电子设备。此外，本发明涉及这种电化学能源的制造方法。

6. 发明申请

WO2007125510A3 ELECTRIC DEVICE COMPRISING AN IMPROVED ELECTRODE WITH A PILLAR HAVING PROTRUSIONS OR SCORES FOR ENHANCED STABILITY 审中-公开
标题翻译：具有改进的电极的电气设备与具有用于增强稳定性的推进或分数的支柱
公开(公告)号：WO2007125510A3
公开(公告)日：2008-01-10
申请号：PCT/IB2007051598
申请日：2007-04-30
申请人： KONINKL PHILIPS ELECTRONICS NV , GUIRAUD LIONEL , LE CORNEC FRANCOIS , ROOZEBOOM FREDDY , KLOOTWIJK JOHAN H , CHEVRIE DAVID D R
发明人： GUIRAUD LIONEL , LE CORNEC FRANCOIS , ROOZEBOOM FREDDY , KLOOTWIJK JOHAN H , CHEVRIE DAVID D R
IPC分类号： H01L21/02 , H01L21/334 , H01L27/08
CPC分类号： H01L27/0805 , H01L27/10817 , H01L27/10829 , H01L27/10852 , H01L27/10861 , H01L28/40 , H01L28/82 , H01L28/90 , H01L29/6609 , H01L29/66181 , H01L29/861
摘要： The invention relates to an electric device including an electric element, the electric element comprising a first electrode (104) having a first surface (106) and a pillar (108), the pillar extending from the first surface in a first direction (110), the pillar having a length measured from the first surface parallel to the first direction, the pillar having a cross section (116) perpendicular to the first direction and the pillar having a sidewall surface (120) enclosing the pillar and extending in the first direction, characterized in -that, the pillar comprises any one of a score (124) and protrusion (122) extending along at least part of the length of the pillar for giving the pillar (108) improved mechanical stability. The electrode allows electrical elements such as capacitors, energy storage devices or diodes to be made with improved properties in a cost effective way.
摘要翻译：本发明涉及包括电气元件的电气设备，电气元件包括具有第一表面（106）和柱（108）的第一电极（104），所述柱从第一表面沿第一方向（110）延伸，，所述柱具有从所述第一表面平行于所述第一方向测量的长度，所述柱具有垂直于所述第一方向的横截面（116），所述柱具有封闭所述柱并且沿所述第一方向延伸的侧壁表面（120）其特征在于，所述支柱包括沿着柱的长度的至少一部分延伸的刻痕（124）和突起（122）中的任何一个，以提供支柱（108）改善的机械稳定性。电极允许以成本有效的方式制造诸如电容器，储能装置或二极管的电气元件，具有改进的性能。

7. 发明申请

WO2010007560A3 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件和制造方法
公开(公告)号：WO2010007560A3
公开(公告)日：2010-05-14
申请号：PCT/IB2009052982
申请日：2009-07-09
申请人： KONINKL PHILIPS ELECTRONICS NV , KLOOTWIJK JOHAN H , TIMMERING EUGENE
发明人： KLOOTWIJK JOHAN H , TIMMERING EUGENE
IPC分类号： H01L23/29
CPC分类号： H01L23/293 , H01L23/3171 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a device (10) comprising a substrate (12) having a front surface (14) and a back surface (24); a semiconductor element (16) provided on the front surface of the substrate; a first passivation layer (18); and a second passivation layer (22) provided on the back surface of the substrate. The present invention also relates to a method of manufacturing such a device.
摘要翻译：本发明涉及包括具有前表面（14）和后表面（24）的基底（12）的装置（10）。设置在所述基板的前表面上的半导体元件（16）第一钝化层（18）; 以及设置在所述基板的背面上的第二钝化层（22）。本发明还涉及一种制造这种装置的方法。

8. 发明申请

WO2010032156A2 CAPACITIVE MICROMACHINED ULTRASOUND TRANSDUCER 审中-公开
标题翻译：电容式MICROMACHINED超声波传感器
公开(公告)号：WO2010032156A2
公开(公告)日：2010-03-25
申请号：PCT/IB2009053914
申请日：2009-09-08
申请人： KONINKL PHILIPS ELECTRONICS NV , KLOOTWIJK JOHAN H , DIRKSEN PETER , MULDER MARCEL , MOONEN ELISABETH M L
发明人： KLOOTWIJK JOHAN H , DIRKSEN PETER , MULDER MARCEL , MOONEN ELISABETH M L
CPC分类号： B60B1/0292 , B06B1/0292 , H02N1/006 , H02N1/08 , Y10T29/49005
摘要： The patent application discloses a capacitive micromachined ultrasound transducer, comprising a silicon substrate; a cavity; a first electrode, which is arranged between the silicon substrate and the cavity; wherein the first electrode is arranged under the cavity; a membrane, wherein the membrane is arranged above the cavity and opposite to the first electrode; a second electrode, wherein the second electrode is arranged above the cavity and opposite to the first electrode; wherein the second electrode is arranged in or close to the membrane, wherein the first electrode and the second electrode are adapted to be supplied by a voltage; and a first isolation layer, which is arranged between the first electrode and the second electrode, wherein the first isolation layer comprises a dielectric. It is also described a system for generating or detecting ultrasound waves, wherein the system comprises a transducer according to the patent application. Further, it is disclosed a method for manufacturing a transducer according to the patent application, wherein the transducer is manufactured with the help of a CMOS manufacturing process,wherein the transducer can be manufactured as a post-processing feature during a CMOS process.
摘要翻译：该专利申请公开了一种电容式微机械超声换能器，其包括硅衬底; 一个空腔布置在硅衬底和腔之间的第一电极; 其中所述第一电极布置在所述空腔下方; 膜，其中所述膜布置在所述腔的上方并与所述第一电极相对; 第二电极，其中所述第二电极布置在所述空腔上方并与所述第一电极相对; 其中所述第二电极布置在所述膜中或靠近所述膜，其中所述第一电极和所述第二电极适于由电压供应; 以及布置在所述第一电极和所述第二电极之间的第一隔离层，其中所述第一隔离层包括电介质。还描述了用于产生或检测超声波的系统，其中该系统包括根据该专利申请的换能器。此外，公开了根据专利申请的用于制造换能器的方法，其中借助于CMOS制造工艺制造所述换能器，其中所述换能器可以在CMOS工艺期间被制造为后处理特征。

9. 发明专利

DE602005005189T2 未知
公开(公告)号：DE602005005189T2
公开(公告)日：2009-03-19
申请号：DE602005005189
申请日：2005-05-03
申请人： NXP BV
发明人： DEN DEKKER ARNOLDUS , DIJKHUIS JOHANNES F , PULSFORD NICOLAS J , VAN BEEK JOZEF T , ROOZEBOOM FREDDY , KEMMEREN ANTONIUS L , KLOOTWIJK JOHAN H , NOLLEN MAARTEN D-J
IPC分类号： H03H3/00 , H01L27/06 , H01L27/08 , H01P1/15 , H03H7/01

10. 发明专利

DE60229400D1 未知
公开(公告)号：DE60229400D1
公开(公告)日：2008-11-27
申请号：DE60229400
申请日：2002-07-08
申请人： NXP BV
发明人： HUIZING HENDRIK G , SLOTBOOM JAN W , TERPSTRA DOEDE , KLOOTWIJK JOHAN H , AKSEN EYUP
IPC分类号： H01L29/08 , H01L21/331 , H01L29/737
摘要： The bipolar transistor comprises a collector region ( 1 ) of a semiconductor material having a first doping type, a base region ( 2 ) of a semiconductor material having a second doping type, and an emitter region ( 3 ) having the first doping type. A junction is present between the emitter region ( 3 ) and the base region ( 2 ), and, viewed from the junction ( 4 ), a depletion region ( 5 ) extends into the emitter region ( 3 ). The emitter region ( 3 ) comprises a layer ( 6 ) of a first semiconductor material and a layer ( 7 ) of a second semiconductor material. The first semiconductor material has a higher intrinsic carrier concentration than the second semiconductor material. The layer ( 7 ) of said second semiconductor material is positioned outside the depletion region ( 5 ). The second semiconductor material has such a doping concentration that Auger recombination occurs. The invention also relates to a semiconductor device comprising such a bipolar transistor. The method of manufacturing the bipolar transistor comprises the step of forming an emitter region ( 3 ) with a first doping type on a collector region ( 1 ) of a semiconductor material with a first doping type, and a base region ( 2 ) of a semiconductor material having a second doping type. The emitter region ( 3 ) is formed by epitaxially depositing a first layer ( 6 ) of a first semiconductor material and subsequently epitaxially depositing a second layer ( 7 ) of a second semiconductor material. The second layer ( 7 ) is doped with the first doping type, such that Auger recombination occurs. The intrinsic carrier concentration of the second semiconductor material is higher than the intrinsic carrier concentration of the first semiconductor material. The Auger recombination dominates the base current and allows accurate tuning of the base current and the current gain of the bipolar transistor.

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