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    • 10. 发明专利
    • Semiconductor device manufacturing method
    • 半导体器件制造方法
    • JP2014107392A
    • 2014-06-09
    • JP2012258748
    • 2012-11-27
    • Nitto Denko Corp日東電工株式会社
    • ISHII ATSUSHIUENDA DAISUKETOYODA HIDESHISUZUKI AKIRA
    • H01L25/04H01L23/52H01L25/18
    • H01L23/145H01L21/561H01L21/568H01L23/3121H01L23/5389H01L24/24H01L24/96H01L25/04H01L25/18H01L2224/04105H01L2224/24137H01L2924/3511H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which inhibits the occurrence of warpage when a thermosetting resin sheet is thermally cured after a plurality of semiconductor chips are buried in the thermosetting resin sheet.SOLUTION: The semiconductor device manufacturing method comprises: a process A of preparing a first laminate in which a first adhesive layer 24 is provided on a first base 22, a second laminate in which a second adhesive layer 34 is provided on a second base 32 and a third laminate which is provided between a surface of the first laminate on the first adhesive layer 24 side and a surface of the second laminate on the second adhesive layer 34 side and in which thermosetting resin sheets 40 in each of which a plurality of semiconductor chips 26 are buried are laminated; a process B of thermally curing the thermosetting resin sheets 40 of the third laminate; a process C of peeling the first laminate after thermally curing the thermosetting resin sheets 40 by using a bonded surface of the thermosetting resin sheets 40 and the first adhesive layer 24 of the first laminate as a boundary surface; and a process D of forming wiring on the thermosetting resin sheets 40 after peeling the first laminate.
    • 要解决的问题:提供一种半导体器件制造方法,其在多个半导体芯片被埋入热固性树脂片中之后,当热固性树脂片材热固化时,抑制翘曲的发生。解决方案:半导体器件制造方法包括: 制备在第一基底22上设置第一粘合剂层24的第一层压体的方法A,在第二基底32上设置第二粘合剂层34的第二层压体和设置在第二基底32的表面之间的第三层压体 第一粘合层24侧的第一层叠体和第二粘合层34侧的第二层叠体的表面层叠有多个半导体芯片26的热固性树脂片40, 对第三层压体的热固性树脂片材40进行热固化的工序B; 通过使用热固性树脂片40的接合面和第一层叠体的第一粘合层24作为边界面热固化热固性树脂片40之后剥离第一层压体的工艺C; 以及在剥离第一层压体之后在热固性树脂片40上形成布线的工序D.