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1. 发明专利

JP2003100654A PATTERN FORMATION METHOD AND SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003100654A
公开(公告)日：2003-04-04
申请号：JP2001298326
申请日：2001-09-27
申请人： DENSO CORP , NITTO DENKO CORP
发明人： ISHIHARA YASUO , INOUE SHINGO , KONDO ICHIJI , TOYODA HIDESHI
IPC分类号： H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a pattern formation method in which a metal film can be patterned inside an opening in an insulating film with a new constitution. SOLUTION: An opening 3 whose end part is tapered is patterned to the insulating film 2 formed on a silicon substrate 1 comprising an N-type diffusion layer 4. A metal film 5, a metal film 6, and a metal film 7 are formed on the insulating film 2 inclusive of the inside of the opening 3. An adhesive sheet is pasted on the surface of the metal films 5, 6, 7, the adhesive sheet is then stripped, the metal films 5, 6, 7 are left inside the opening 3 including its taper part, the metal films 5, 6, 7 on the insulating film 2 in their circumference are removed so as to be patterned.

2. 发明专利

JP2009239292A Method of dry etching and dry etching apparatus used therefor 审中-公开
标题翻译：干燥蚀刻和干燥蚀刻装置的方法
公开(公告)号：JP2009239292A
公开(公告)日：2009-10-15
申请号：JP2009123962
申请日：2009-05-22
申请人： Denso Corp , Nippon Soken Inc , 株式会社デンソー , 株式会社日本自動車部品総合研究所
发明人： FUKADA TSUYOSHI , OZOE SHOJI , MUTO KOJI , INOUE SHINGO , NOGUCHI HIROKI , ASAMI KAZUSHI
IPC分类号： H01L29/84 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To improve etch rate uniformity across a substrate surface in an etching process for removing an oxide film on a substrate.
SOLUTION: This method for dry-etching an insulating film on a substrate is configured to have a pair of electrodes 3, 4 facing to each other in a processing chamber 2, and dispose a substrate 20, which is made of Si and has an insulating film 20c, in an area between the electrodes, and apply a high-frequency power to the pair of electrodes while introducing etching gas into the processing chamber. In this method, a surface of the substrate is made to contact to a conductive member 13, and a high-frequency power is controlled while etching gas is introduced into the processing chamber, and the insulating film on the substrate is dray-etched from the other surface side of the substrate under a condition in which an etching selection ratio is made larger to compensate the lowering of the etching selection ratio of Si and the insulating film caused by bringing the substrate into contact with the conductive member.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在用于去除衬底上的氧化膜的蚀刻工艺中提高衬底表面上的蚀刻速率均匀性。解决方案：用于对基板上的绝缘膜进行干蚀刻的方法被配置为在处理室2中具有彼此面对的一对电极3,4，并且设置由Si制成的基板20和在电极之间的区域中具有绝缘膜20c，并且在将蚀刻气体引入到处理室中的同时向一对电极施加高频电力。在该方法中，使基板的表面与导电构件13接触，并且在将蚀刻气体引入到处理室中的同时控制高频电力，并且从基板的绝缘膜上剥离基板在蚀刻选择比较大的条件下，衬底的另一表面侧补偿由于使衬底与导电构件接触而引起的Si和绝缘膜的蚀刻选择比的降低。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2000111925A LIQUID CRYSTAL CELL AND ITS MANUFACTURE 失效
公开(公告)号：JP2000111925A
公开(公告)日：2000-04-21
申请号：JP28674198
申请日：1998-10-08
申请人： DENSO CORP
发明人： UEDA NAOKI , INOUE SHINGO
IPC分类号： G09F9/30 , G02F1/1339
摘要： PROBLEM TO BE SOLVED: To optimize a gap between both electrode substrates by once forming respective partitions on an inside surface of one of the electrode substrate, reducing and adjusting a height of at least one partition. SOLUTION: Heights of respective partitions, formed in a partition forming step S7, are measured in a height measuring step S81. Next, in an organic solvent treatment step S82, IPA(isopropyl alcohol) is kept at a temperature of treatment T to adjust heights of respective partitions to a desired height and an electrode substrate on which partitions is previously formed is immersed in the IPA for a treatment time(t) and washed. After the treatment in the organic solvent treatment step S82 and a succeeding washing and drying step S83, heights of respective partitions are measured in a height measuring step S84. Thereby it is confirmed that the heights of respective partitions are reduced to a desired height.

4. 发明专利

JP2001351905A DRY ETCHING METHOD AND DRY ETCHING APPARATUS USING THE SAME 失效
公开(公告)号：JP2001351905A
公开(公告)日：2001-12-21
申请号：JP2000173918
申请日：2000-06-09
申请人： DENSO CORP , NIPPON SOKEN
发明人： INOUE SHINGO , OZOE SHOJI , MUTO KOJI , NOGUCHI HIROKI , FUKADA TAKESHI , ASAUMI KAZUSHI
IPC分类号： H01L29/84 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To improve etching rate in uniformity within the surface of a substrate in the etching process of removing an oxide film from the substrate. SOLUTION: Three projections 3b are provided on a lower electrode 3 in a processing chamber 2, protruding toward an upper electrode 4. An SOI substrate 20 is placed on the projections 3b, etching gas is introduced into the processing chamber 2, high-frequency power is applied to the lower electrode 3 to generate plasma, and an oxide film is dry-etched, in a state in which the surface of the SOI substrate facing the lower electrode 3 is exposed to the plasma.

5. 发明专利

JP2001351904A DRY ETCHING METHOD AND DRY ETCHING APPARATUS USING THE SAME 失效
公开(公告)号：JP2001351904A
公开(公告)日：2001-12-21
申请号：JP2000173917
申请日：2000-06-09
申请人： DENSO CORP , NIPPON SOKEN
发明人： FUKADA TAKESHI , OZOE SHOJI , MUTO KOJI , INOUE SHINGO , NOGUCHI HIROKI , ASAUMI KAZUSHI
IPC分类号： H01L29/84 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To improve etching rate in uniformity within the surface of a substrate in an etching process of removing an oxide film from the substrate. SOLUTION: An insulating plate 3a is provided on a lower electrode 3 inside a processing chamber 2, and a through-hole 3b is bored in the lower electrode in the direction of the thickness. An SOI substrate 20 is disposed on the lower electrode 3, an etching gas is introduced into the processing chamber 2, and a high-frequency power is applied to the lower electrode 3 to dry-etch an oxide film in a dry etching process, and a conductive member 13 is brought into contact with the SOI substrate 20 via the through-hole 3b, so as to discharge static electricity from the SOI substrate that is electrically charged in dry etching in destaticization process. These two processes are carried out repeatedly.

6. 发明专利

JP2001351880A METHOD OF DRY ETCHING AND DRY ETCHING APPARATUS USED THEREIN 失效
公开(公告)号：JP2001351880A
公开(公告)日：2001-12-21
申请号：JP2000173919
申请日：2000-06-09
申请人： DENSO CORP , NIPPON SOKEN
发明人： SUGITO YASUNARI , INOUE SHINGO , OZOE SHOJI , MUTO KOJI , NOGUCHI HIROKI , FUKADA TAKESHI , ASAUMI KAZUSHI
IPC分类号： H01L29/84 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To increase the uniformity of an etch rate in a plane of a substrate when removing an oxide film from the substrate by dry etching. SOLUTION: An insulation film is removed by repeating the following two processes: (1) a process wherein an SOI substrate 20 is disposed on a lower electrode 3 in a processing chamber 2, and then an etching gas is supplied into the processing chamber 2, and at the same time, high frequency power is applied to the lower electrode 3 to dry-etch the insulation film; (2) an electrification uniforming process wherein electrons are supplied into the processing chamber by means of an electron irradiation apparatus 13 installed in the etching apparatus 1 to uniform the distribution of electric charges stored in the SOI substrate during dry etching.

7. 发明专利

JP2004266207A Method for manufacturing semiconductor device equipped with resistor 有权
公开(公告)号：JP2004266207A
公开(公告)日：2004-09-24
申请号：JP2003057076
申请日：2003-03-04
申请人： Denso Corp , 株式会社デンソー
发明人： INOUE SHINGO , NOGUCHI HIROKI , HYODO MOTOAKI , ITO MOTOKI
IPC分类号： H01L21/3065 , H01L21/306 , H01L21/3213 , H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To reliably pattern a barrier metal formed on a resistor.
SOLUTION: After a wet etching for patterning the barrier metal is performed, a short-termed dry etching is performed to remove CrSiN of an alloy layer formed at an interface between the barrier metal and a resistor material. Thereafter, the wet etching is performed again to remove TiW of the alloy layer. At this time, since the short-termed dry etching has been performed, TiW left behind without being removed in the initial wet etching is removed. For this reason, when a thin film resistor is patterned after that, TiW serves as a mask, so that a hindrance to the etching can be prevented. There can disappear a drawback that a residue of CrSiN or TiW is generated, or a surface unevenness of an underlying film of CrSiN is generated. A stable thin film resistor can be obtained.
COPYRIGHT: (C)2004,JPO&NCIPI

8. 发明专利

JP2004260071A Dry etching method 审中-公开
标题翻译：干蚀刻方法
公开(公告)号：JP2004260071A
公开(公告)日：2004-09-16
申请号：JP2003051009
申请日：2003-02-27
申请人： Denso Corp , 株式会社デンソー
发明人： INOUE SHINGO , HYODO MOTOAKI , NOGUCHI HIROKI , ITO MOTOKI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To increase the uniformity of an etching rate in the plane of a semiconductor substrate when the removal of an insulating film of the substrate is carried out by dry etching.
SOLUTION: In a method for dry etching the insulating film provided on the semiconductor substrate, a ratio of an Ar gas in mixture gas used when dry etching is carried out is set at 40% or less. By the dry etching method, even when dry etching advances, it becomes difficult for the semiconductor substrate to be electrically charged, thus increasing the uniformity of the etching rate in the plane of the substrate.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：当通过干法蚀刻来进行基板的绝缘膜的去除时，提高半导体基板的平面中的蚀刻速度的均匀性。解决方案：在对半导体衬底上设置的绝缘膜进行干蚀刻的方法中，进行干蚀刻时使用的混合气体中的Ar气体的比例设定为40％以下。通过干蚀刻方法，即使当干蚀刻前进时，半导体衬底变得难以充电，从而增加衬底的平面中的蚀刻速率的均匀性。版权所有（C）2004，JPO＆NCIPI

9. 发明专利

JP2001308073A METHOD FOR DRY ETCHING AND DRY ETCHING APPARATUS USED THEREFOR 失效
公开(公告)号：JP2001308073A
公开(公告)日：2001-11-02
申请号：JP2000126162
申请日：2000-04-26
申请人： DENSO CORP , NIPPON SOKEN
发明人： NOGUCHI HIROKI , OZOE SHOJI , MUTO KOJI , ASAUMI KAZUSHI , INOUE SHINGO , FUKADA TAKESHI
IPC分类号： G01C19/56 , G01C19/5769 , G01P15/125 , H01L21/302 , H01L21/3065 , H01L29/84 , H05H1/46 , G01P9/04
摘要： PROBLEM TO BE SOLVED: To improve uniformity of etching rate within a substrate surface area in removing an insulating film on the substrate by dry etching. SOLUTION: An SOI substrate 20 is arranged on a lower electrode 3 inside a process chamber 2, and magnets 91-93 are arranged underneath the lower electrode 3. A step of dry-etching an oxide film, by introducing etching gas into the inside of the process chamber 2 under a condition, in which the magnetic flux density in the central part of the SOI substrate 20 is large and a high-frequency power to the lower electrode 3 is applied, and a step of controlling the electric charge distribution on the SOI substrate 20 charged during the dry etching by creating a condition, in which the magnetic flux density in the central part of the SOI substrate 20 is low, are alternately repeated.

10. 发明专利

JP2001313281A METHOD OF DRY ETCHING AND DRY ETCHING APPARATUS USED THEREFOR 失效
公开(公告)号：JP2001313281A
公开(公告)日：2001-11-09
申请号：JP2000128253
申请日：2000-04-27
申请人： DENSO CORP , NIPPON SOKEN
发明人： OZOE SHOJI , MUTO KOJI , ASAUMI KAZUSHI , INOUE SHINGO , NOGUCHI HIROKI , FUKADA TAKESHI
IPC分类号： G01C19/56 , G01C19/5769 , G01P15/125 , H01L21/302 , H01L21/3065 , H01L29/84 , H05H1/46 , G01P9/04
摘要： PROBLEM TO BE SOLVED: To improve uniformity of etch rate inside the surface area of a substrate in removing an oxide film on the substrate by dry etching. SOLUTION: An SOI substrate 20 is loaded on a lower electrode 3 in a process chamber 2, while a part of an upper electrode 4 facing to a part (central part) of the SOI substrate 20 where charge up is large is protruded toward the SOI substrate 20 side to form a stepwise level difference. An etching gas is introduced into the inside of the process chamber 2, and a high-frequency power is applied to the lower electrode 3 to remove an insulating oxide film of the SOI substrate. Because, in the protruding part of the upper electrode 4, impedance between the electrodes is lowered and the density of the ions generated from the etching gas is increased, uniformity of the etch rate in the SOI substrate 20 can be improved.

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