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1. 发明授权

US5028702A Dust-proof film 失效
标题翻译：防尘膜
公开(公告)号：US5028702A
公开(公告)日：1991-07-02
申请号：US262809
申请日：1988-10-26
申请人： Muneyuki Matsumoto , Hiroaki Nakagawa
发明人： Muneyuki Matsumoto , Hiroaki Nakagawa
IPC分类号： G03F1/62
CPC分类号： G03F1/62
摘要： A dust-proof film is made from a material which contains a cellulose ester and whose transmittances of light having a wavelength of 365 nm and a wavelength of 436 are 98% or more, or the dust-proof film is formed of cellulose propionate whose weight average molecular weight using polystyrene as a reference is 60,000-400,000. The dust-proof film has a long life and excels in light resisting properties with respect to the i-line. In addition, the dust-proof film is useful as a long-life pellicle for a broad line and exhibits high light transmittance properties with respect to both the i-line and the g-line.

2. 发明申请

US20050156332A1 Damascene interconnection and semiconductor device 有权
标题翻译：大马士革互连和半导体器件
公开(公告)号：US20050156332A1
公开(公告)日：2005-07-21
申请号：US11063148
申请日：2005-02-22
申请人： Koji Yamamoto , Nobuhisa Kumamoto , Muneyuki Matsumoto
发明人： Koji Yamamoto , Nobuhisa Kumamoto , Muneyuki Matsumoto
IPC分类号： H01L21/768 , H01L23/48 , H01L23/485
CPC分类号： H01L24/05 , H01L21/7684 , H01L2224/05546 , H01L2224/05624 , H01L2224/05647 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/00014
摘要： A semiconductor device includes an insulating film. On this insulating film, formed are an interconnection trench communicating with a semiconductor element and a pad trench communicating with the interconnection trench. In the pad trench, a protrusion is formed by leaving one part of the insulating film. A conductive film is formed over the insulating film including the interconnection and pad trenches. Thereafter, the conductive film is removed by a CMP process. At this time, the protrusion serves to prevent the conductive film in the pad trench from being over-polished.
摘要翻译：半导体器件包括绝缘膜。在该绝缘膜上，形成有与半导体元件连通的互连沟槽和与互连沟槽连通的焊盘沟槽。在焊盘沟槽中，通过留下绝缘膜的一部分形成突起。在包括互连和焊盘沟槽的绝缘膜上形成导电膜。此后，通过CMP工艺去除导电膜。此时，突起用于防止焊盘沟槽中的导电膜被过度抛光。

3. 发明授权

US06879049B1 Damascene interconnection and semiconductor device 有权
标题翻译：大马士革互连和半导体器件
公开(公告)号：US06879049B1
公开(公告)日：2005-04-12
申请号：US09600931
申请日：1999-01-22
申请人： Koji Yamamoto , Nobuhisa Kumamoto , Muneyuki Matsumoto
发明人： Koji Yamamoto , Nobuhisa Kumamoto , Muneyuki Matsumoto
IPC分类号： H01L21/768 , H01L23/48 , H01L23/485 , H01L29/40
CPC分类号： H01L24/05 , H01L21/7684 , H01L2224/05546 , H01L2224/05624 , H01L2224/05647 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/00014
摘要： A semiconductor device includes an insulating film. On this insulating film, are formed an interconnection trench communicating with a semiconductor element and a pad trench communicating with the interconnection trench. In the pad trench, a protrusion is formed by leaving one part of the insulating film. A conductive film is formed over the insulating film including the interconnection and pad trenches. Thereafter, the conductive film is removed by a CMP process. At this time, the protrusion serves to prevent the conductive film in the pad trench from being over-polished.
摘要翻译：半导体器件包括绝缘膜。在该绝缘膜上形成与半导体元件连通的互连沟槽和与互连沟槽连通的焊盘沟槽。在焊盘沟槽中，通过留下绝缘膜的一部分形成突起。在包括互连和焊盘沟槽的绝缘膜上形成导电膜。此后，通过CMP工艺去除导电膜。此时，突起用于防止焊盘沟槽中的导电膜被过度抛光。

4. 发明授权

US06992006B2 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06992006B2
公开(公告)日：2006-01-31
申请号：US10922951
申请日：2004-08-23
申请人： Hideki Otsuka , Tsuyoshi Miyata , Muneyuki Matsumoto , Hiroshi Kawano
发明人： Hideki Otsuka , Tsuyoshi Miyata , Muneyuki Matsumoto , Hiroshi Kawano
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02074 , H01L21/3212 , H01L21/32134 , H01L21/7684
摘要： The present invention provides a method for fabricating a semiconductor device which initially performs chemical mechanical polishing with respect to a metal film made of copper formed on a semiconductor substrate to form wires composed of the metal film on the semiconductor substrate and subsequently removes a wire-to-wire bridge occurring during the formation of the wires and remaining on the semiconductor substrate to cause unneeded conduction between the wires adjacent to each other. The removal of the wire-to-wire bridge is performed by oxidizing the wire-to-wire bridge into a copper oxide by using an aqueous hydrogen peroxide and then dissolving the copper oxide by using an oxalic acid. This allows the removal of the wire-to-wire bridge without damaging the main bodies of the wires.
摘要翻译：本发明提供一种制造半导体器件的方法，该半导体器件最初对形成在半导体衬底上的由铜制成的金属膜进行化学机械抛光，以形成由半导体衬底上的金属膜构成的导线，在电线形成期间发生并且保留在半导体衬底上以在彼此相邻的导线之间引起不必要的导通。线对线桥的去除通过使用过氧化氢水溶液将线对线桥氧化成氧化铜，然后使用草酸溶解氧化铜来进行。这允许去除线对线桥而不损坏导线的主体。

5. 发明授权

US06379228B2 Polishing machine having a plurality of abrasive pads 失效
标题翻译：抛光机具有多个研磨垫
公开(公告)号：US06379228B2
公开(公告)日：2002-04-30
申请号：US09728116
申请日：2000-12-04
申请人： Muneyuki Matsumoto
发明人： Muneyuki Matsumoto
IPC分类号： B24B700
CPC分类号： B24B37/24 , B24B41/047
摘要： A polishing machine provided with a plurality of bases operative independently of each other; a plurality of abrasive pads respectively fixed to the plurality of bases and each having an abrasive surface for polishing a workpiece; and a base driving mechanism for individually operating the plurality of bases. The operations of the respective bases are individually controlled by controlling the base driving mechanism by means of a control circuit. The control circuit controls the base driving mechanism so that the workpiece is generally uniformly polished by the abrasive surfaces of the respective abrasive pads.
摘要翻译：一种抛光机，其具有彼此独立地操作的多个基座; 多个研磨垫分别固定在所述多个基座上并且各自具有用于抛光工件的研磨表面; 以及用于单独操作所述多个基座的基座驱动机构。通过控制电路控制基座驱动机构，分别控制各个基座的动作。控制电路控制基座驱动机构，使得工件通常由相应研磨垫的研磨表面均匀地抛光。

6. 发明授权

US06376362B1 Production of semiconductor device 有权
标题翻译：生产半导体器件
公开(公告)号：US06376362B1
公开(公告)日：2002-04-23
申请号：US09546172
申请日：2000-04-11
申请人： Muneyuki Matsumoto
发明人： Muneyuki Matsumoto
IPC分类号： H01L2144
CPC分类号： H01L24/03 , H01L23/53238 , H01L24/05 , H01L24/11 , H01L24/45 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/45144 , H01L2224/48624 , H01L2224/48647 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04941 , H01L2924/04953 , H01L2924/0496 , H01L2924/00014 , H01L2924/00
摘要： A method of producing a semiconductor device having a connecting thin film for connection to a bonding wire on a bonding pad formed on a surface of a surface protective film. A recess is formed in the surface of the surface protective film. Thereafter, a metal deposited layer composed of a material for the bonding pad is formed, and a metal thin film composed of a material for the connecting thin film is further formed thereon. After the metal thin film is formed, unnecessary parts of the metal deposited layer and the metal thin film are removed by chemical mechanical polishing, for example.
摘要翻译：一种制造半导体器件的方法，所述半导体器件具有用于连接到形成在表面保护膜的表面上的接合焊盘上的接合线的连接薄膜。在表面保护膜的表面形成凹部。此后，形成由用于焊盘的材料构成的金属沉积层，并且在其上进一步形成由用于连接薄膜的材料构成的金属薄膜。在形成金属薄膜之后，例如通过化学机械抛光除去金属沉积层和金属薄膜的不必要部分。

7. 发明授权

US07238093B1 Polishing cloth for chemical mechanical polishing, and chemical mechanical polishing apparatus using said cloth 有权
标题翻译：用于化学机械抛光的抛光布，以及使用所述布的化学机械抛光装置
公开(公告)号：US07238093B1
公开(公告)日：2007-07-03
申请号：US09449907
申请日：1999-12-02
申请人： Tatsuya Sakamoto , Muneyuki Matsumoto
发明人： Tatsuya Sakamoto , Muneyuki Matsumoto
IPC分类号： B24B29/00
CPC分类号： B24B37/26
摘要： A chemical mechanical polishing cloth for chemically mechanically polishing a workpiece. This chemical mechanical polishing cloth includes, on the opposite-to-workpiece face thereof: polishing projections having polishing faces arranged to come in contact with a workpiece for polishing the same; polishing agent passages for introducing a polishing agent; and at least one-stage step portions formed between the polishing faces of the polishing projections and the bottoms of the polishing agent passages.
摘要翻译：用于化学机械抛光工件的化学机械抛光布。该化学机械抛光布在其相对工件表面上包括：抛光凸起，其具有布置成与工件接触的抛光面，用于抛光; 用于引入抛光剂的抛光剂通道; 以及形成在研磨突起的研磨面和研磨剂通路的底部之间的至少一级台阶部。

8. 发明申请

US20070161342A1 Polishing pad, polishing apparatus and method for polishing wafer 审中-公开
标题翻译：抛光垫，抛光装置和抛光晶圆的方法
公开(公告)号：US20070161342A1
公开(公告)日：2007-07-12
申请号：US11710916
申请日：2007-02-27
申请人： Eigo Shirakashi , Muneyuki Matsumoto , Mitsunari Satake , Kenji Kobayashi
发明人： Eigo Shirakashi , Muneyuki Matsumoto , Mitsunari Satake , Kenji Kobayashi
IPC分类号： B24B21/00 , B24D11/00
CPC分类号： B24B37/24 , B24B37/205 , B24D11/02 , C09K3/1463
摘要： A polishing apparatus includes a belt-type surface plate stretched between two rollers each having a rotation shaft arranged in parallel to that of the other roller, a plurality of sheet-type polishing pads stuck on the surface plate, and a dresser for activating the polishing pads. Part of an upper end portion of each of the polishing pads facing an adjacent one of the polishing pads has an obtuse angle. Thus, the dresser is not caught by the upper end portion of each of the polishing pads, so that the generation of a scratch in the polishing pads. Therefore, a semiconductor wafer can be polished without causing a scratch thereon.
摘要翻译：抛光装置包括在两个辊之间拉伸的带状表面板，每个辊具有平行于另一个辊的旋转轴，粘附在表面板上的多个片状抛光垫和用于激活抛光的修整器垫每个抛光垫的面向相邻的一个抛光垫的上端部分的一部分具有钝角。因此，修整器不被每个抛光垫的上端部分捕获，从而在抛光垫中产生划痕。因此，半导体晶片可以被抛光而不会在其上产生划痕。

9. 发明授权

US06518150B1 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06518150B1
公开(公告)日：2003-02-11
申请号：US09449472
申请日：1999-11-29
申请人： Muneyuki Matsumoto
发明人： Muneyuki Matsumoto
IPC分类号： H01L21265
CPC分类号： H01L21/26513 , H01L21/26506
摘要： In a wafer treating process, an impurity ion implanting, an Si+ ion implanting and an annealing are successively effected on an Si substrate. In the impurity ion implanting, an impurity ion is introduced into the Si substrate by ion implantation using a projected range. In the Si+ ion implanting, an Si+ ion is introduced into the Si substrate subjected to the impurity ion implanting by ion implantation using a projected range smaller than the above projected range. In the annealing, the Si substrate subjected to the impurity ion implanting and the Si+ ion implanting is subjected to heat treatment. As a result, the Si+ ion introduced in the Si+ ion implanting is bonded to each vacancy defect developed in the impurity ion implanting in the wafer treating process, so that the occurrence of crystal defects due to the vacancy defects is inhibited.
摘要翻译：在晶片处理工艺中，在Si衬底上依次进行杂质离子注入，Si +离子注入和退火。在杂质离子注入中，通过使用投影范围的离子注入将杂质离子引入Si衬底。在Si +离子注入中，通过使用小于上述投影范围的投影范围，通过离子注入将Si +离子引入经过杂质离子注入的Si衬底中。在退火中，对经过杂质离子注入的Si衬底和Si +离子注入进行热处理。结果，Si +离子注入中引入的Si +离子与在晶片处理工艺中的杂质离子注入中产生的空位缺陷相结合，从而抑制由空位缺陷引起的晶体缺陷的发生。

10. 发明授权

US5670551A Crosslinked foamed body and a process for its production 失效
标题翻译：交联泡沫体及其生产工艺
公开(公告)号：US5670551A
公开(公告)日：1997-09-23
申请号：US501063
申请日：1995-08-11
申请人： Muneyuki Matsumoto , Keiji Okada , Yoshihisa Matsuo , Akemi Uchimi
发明人： Muneyuki Matsumoto , Keiji Okada , Yoshihisa Matsuo , Akemi Uchimi
IPC分类号： C08J9/06 , C08J3/24 , C08J9/00 , C08J9/10 , C08K5/17 , C08K5/22 , C08K5/25 , C08K5/37 , C08L23/28
CPC分类号： C08J9/103 , C08J3/244 , C08J9/0028 , C08J9/104 , C08J2323/00 , C08J2323/28
摘要： A crosslinked foamed body obtained by subjecting a rubber compounded product comprising (A) a chlorinated ethylene/.alpha.-olefin copolymer rubber, (B) a triazinethiol as a vulcanization agent, (C) an alkyl ammonium halide as a vulcanization promotor, and (D) a hydrazide-type blowing agent to two step vulcanization and foaming at a vulcanization temperature of 120.degree. to 140.degree. C. for a vulcanization time of 5 to 10 minutes in a first step and at a vulcanization temperature of 125.degree. to 160.degree. C. for a vulcanization time of 5 to 20 minutes in a second step, the second step vulcanization temperature being higher than the first step by at least 5.degree. C., so that the expansion factor will be 3 to 10 times. This crosslinked foamed body can be colored brilliantly, exhibit excellent weatherability, suppleness and shape retention as well as good outer appearance. This product is well usable, for example, as wet suits.
摘要翻译： PCT No.PCT / JP94 / 02081 Sec。 371日期：1995年8月11日 102（e）日期1995年8月11日PCT 1994年12月12日PCT PCT。公开号WO95 / 16732 日期：1995年6月22日通过将（A）氯化乙烯/α-烯烃共聚物橡胶，（B）三嗪硫醇作为硫化剂的（A）橡胶配混产物，（C）烷基卤化铵作为硫化而得到的交联发泡体促进剂和（D）酰肼型发泡剂，在硫化温度为120-140℃下进行二步硫化和发泡，硫化时间为5〜10分钟，硫化温度125℃ 在第二步骤中硫化时间为5-20分钟，第二步硫化温度比第一步高至少5℃，使膨胀系数为3〜10倍。该交联发泡体可以显色，显示出优异的耐候性，柔软性和形状保持性以及良好的外观。该产品可以很好地使用，例如，作为湿衣服。

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