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    • 2. 发明授权
    • Method for forming buried interconnect
    • 掩埋互连的形成方法
    • US06737348B2
    • 2004-05-18
    • US10120385
    • 2002-04-12
    • Mitsunari SatakeMasashi HamanakaHideaki Yoshida
    • Mitsunari SatakeMasashi HamanakaHideaki Yoshida
    • H01L21461
    • H01L21/7684H01L21/31053H01L21/3212H01L21/76819
    • Holes are formed in a first insulating film deposited on a substrate. After depositing a first conducting film over the first insulating film including the holes, the first conducting film is subjected to first CMP, so as to form plugs from the first conducting film. Next, the first insulating film is subjected to second CMP with a polishing rate of the first insulating film higher than a polishing rate of the first conducting film, so as to planarize the first insulating film by eliminating erosion caused in a region of the first insulating film where the plugs are densely formed. After depositing a second insulating film on the planarized first insulating film, interconnect grooves are formed in the second insulating film. After depositing a second conducting film over the second insulating film including the interconnect grooves, the second conducting film is subjected to third CMP, so as to form buried interconnects from the second conducting film.
    • 在沉积在基板上的第一绝缘膜中形成孔。 在包括孔的第一绝缘膜上沉积第一导电膜之后,对第一导电膜进行第一CMP,以形成来自第一导电膜的插塞。 接下来,对第一绝缘膜进行第二CMP,其中第一绝缘膜的抛光速率高于第一导电膜的抛光速率,以便通过消除在第一绝缘膜的区域中引起的侵蚀而使第一绝缘膜平坦化 胶片密集地形成。 在平坦化的第一绝缘膜上沉积第二绝缘膜之后,在第二绝缘膜中形成互连槽。 在包括互连槽的第二绝缘膜上沉积第二导电膜之后,对第二导电膜进行第三CMP,以形成来自第二导电膜的掩埋互连。