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1. 发明授权

US08693259B2 Wordline-to-wordline stress configuration 有权
标题翻译：字线到字线应力配置
公开(公告)号：US08693259B2
公开(公告)日：2014-04-08
申请号：US13340437
申请日：2011-12-29
申请人： Mrinal Kochar , Jianmin Huang , Jun Wan , Jian Chen
发明人： Mrinal Kochar , Jianmin Huang , Jun Wan , Jian Chen
IPC分类号： G11C16/06
CPC分类号： G11C29/06 , G11C16/00 , G11C2029/1202
摘要： A method and system for performing wordline-to-wordline stress routines on a storage device is disclosed. Stress routines may be performed to reduce state widening in multi-level memory cells in the storage device. However, data retention problems may result if the stress routines are performed too often. In order to perform the stress routines at the proper times, a stress control variable is used. The stress control variable may be indicative of age of the storage device (such as the number of erase cycles performed on a memory block in the storage device). The stress control variable is input to a look-up table (or other logical construct), with the output of the look-up table indicating whether to perform the wordline-to-wordline stress routine. In this way, the stress routines may be performed to reduce state widening while reducing the ill effects of data retention.
摘要翻译：公开了一种用于在存储设备上执行字线到字线应力程序的方法和系统。可以执行应力程序以减少存储设备中的多级存储器单元中的状态变宽。但是，如果压力程序太频繁地执行，则可能会导致数据保留问题。为了在适当的时候执行压力程序，使用应力控制变量。应力控制变量可以指示存储设备的年龄（例如在存储设备中的存储器块上执行的擦除周期的数量）。压力控制变量被输入到查找表（或其他逻辑结构），查找表的输出指示是否执行字线到字线应力程序。以这种方式，可以执行应力程序以减少状态扩大，同时减少数据保留的不良影响。

2. 发明申请

US20130170301A1 Wordline-to-Wordline Stress Configuration 有权
标题翻译： Wordline到Wordline应力配置
公开(公告)号：US20130170301A1
公开(公告)日：2013-07-04
申请号：US13340437
申请日：2011-12-29
申请人： Mrinal Kochar , Jianmin Huang , Jun Wan , Jian Chen
发明人： Mrinal Kochar , Jianmin Huang , Jun Wan , Jian Chen
IPC分类号： G11C29/00
CPC分类号： G11C29/06 , G11C16/00 , G11C2029/1202
摘要： A method and system for performing wordline-to-wordline stress routines on a storage device is disclosed. Stress routines may be performed to reduce state widening in multi-level memory cells in the storage device. However, data retention problems may result if the stress routines are performed too often. In order to perform the stress routines at the proper times, a stress control variable is used. The stress control variable may be indicative of age of the storage device (such as the number of erase cycles performed on a memory block in the storage device). The stress control variable is input to a look-up table (or other logical construct), with the output of the look-up table indicating whether to perform the wordline-to-wordline stress routine. In this way, the stress routines may be performed to reduce state widening while reducing the ill effects of data retention.
摘要翻译：公开了一种用于在存储设备上执行字线到字线应力程序的方法和系统。可以执行应力程序以减少存储设备中的多级存储器单元中的状态变宽。但是，如果压力程序太频繁地执行，则可能会导致数据保留问题。为了在适当的时候执行压力程序，使用应力控制变量。应力控制变量可以指示存储设备的年龄（例如在存储设备中的存储器块上执行的擦除周期的数量）。压力控制变量被输入到查找表（或其他逻辑结构），查找表的输出指示是否执行字线到字线应力程序。以这种方式，可以执行应力程序以减少状态扩大，同时减少数据保留的不良影响。

3. 发明申请

US20130346805A1 FLASH MEMORY WITH TARGETED READ SCRUB ALGORITHM 有权
标题翻译：具有指定读取SCRUB算法的闪存
公开(公告)号：US20130346805A1
公开(公告)日：2013-12-26
申请号：US13529522
申请日：2012-06-21
申请人： Steven T. Sprouse , Alexandra Bauche , Yichao Huang , Jian Chen , Jianmin Huang , Dana Lee
发明人： Steven T. Sprouse , Alexandra Bauche , Yichao Huang , Jian Chen , Jianmin Huang , Dana Lee
IPC分类号： G06F11/28
CPC分类号： G11C16/3418 , G11B20/18 , G11B20/1883 , G11C16/3427 , G11C16/3431
摘要： A method and system have been described for counteracting and correcting for read disturb effects in blocks of flash memory. The method may include the step of a controller of the memory system performing a read scrub scan on only a portion of one targeted word line in a block at desired intervals. The controller may calculate whether a read scrub scan is necessary based on a probabilistic determination that is calculated in response to each received host read command. The controller may then place a block associated with the targeted word line into a refresh queue if a number of errors are detected in the targeted word line that meets or exceeds a predetermined threshold. The block refresh process may include copying the data from the block into a new block during a background operation.
摘要翻译：已经描述了用于抵消和校正闪速存储器块中的读取干扰效应的方法和系统。该方法可以包括存储器系统的控制器的步骤，其以期望的间隔仅在块中的一个目标字线的一部分上执行读取擦除扫描。控制器可以基于响应于每个接收的主机读取命令而计算的概率确定来计算是否需要读取擦除扫描。然后，如果在满足或超过预定阈值的目标字线中检测到多个错误，则控制器然后可以将与目标字线相关联的块放置到刷新队列中。块刷新过程可以包括在后台操作期间将数据从块复制到新块中。

4. 发明授权

US08423866B2 Non-volatile memory and method with post-write read and adaptive re-write to manage errors 有权
标题翻译：非易失性存储器和具有后写入读取和自适应重写的方法来管理错误
公开(公告)号：US08423866B2
公开(公告)日：2013-04-16
申请号：US12642728
申请日：2009-12-18
申请人： Gautam Ashok Dusija , Jian Chen , Chris Avila , Jianmin Huang , Lee M. Gavens
发明人： Gautam Ashok Dusija , Jian Chen , Chris Avila , Jianmin Huang , Lee M. Gavens
IPC分类号： G06F11/00
CPC分类号： G11C11/5621 , G11C16/10 , G11C16/349 , G11C16/3495 , G11C29/00 , G11C2211/5641
摘要： Data errors in non-volatile memory inevitably increase with usage and with higher density of bits stored per cell. The memory is configured to have a first portion operating with less error but of lower density storage, and a second portion operating with a higher density but less robust storage. Input data is written and staged in the first portion before being copied to the second portion. An error management provides checking the quality of the copied data for excessive error bits. The copying and checking are repeated on a different location in the second portion until either a predetermined quality is satisfied or the number or repeats exceeds a predetermined limit. The error management is not started when a memory is new with little or no errors, but started after the memory has aged to a predetermined amount as determined by the number of erase/program cycling its has experienced.
摘要翻译：非易失性存储器中的数据错误不可避免地随着使用而增加，并且每个单元存储更高密度的位。存储器被配置为具有以较小误差但是较低密度存储器操作的第一部分，以及以较高密度但较不牢固的存储器操作的第二部分。在将第一部分复制到第二部分之前，输入数据被写入并分级。错误管理提供检查复制数据的质量是否存在过多的错误位。在第二部分中的不同位置重复复印和检查，直到满足预定质量或者数量或重复超过预定限度。当存储器是新的，几乎没有或没有错误时，错误管理不开始，但是在内存已经老化到由其经历的擦除/程序循环的数量确定的预定量之后开始。

5. 发明申请

US20110099460A1 Non-Volatile Memory And Method With Post-Write Read And Adaptive Re-Write To Manage Errors 有权
标题翻译：非易失性存储器和具有后写入读取和自适应重写的方法来管理错误
公开(公告)号：US20110099460A1
公开(公告)日：2011-04-28
申请号：US12642728
申请日：2009-12-18
申请人： Gautam Ashok Dusija , Jian Chen , Chris Avila , Jianmin Huang , Lee M. Gavens
发明人： Gautam Ashok Dusija , Jian Chen , Chris Avila , Jianmin Huang , Lee M. Gavens
IPC分类号： G11C29/52 , G06F11/10 , G06F12/16 , G06F12/00
CPC分类号： G11C11/5621 , G11C16/10 , G11C16/349 , G11C16/3495 , G11C29/00 , G11C2211/5641
摘要： Data errors in non-volatile memory inevitably increase with usage and with higher density of bits stored per cell. The memory is configured to have a first portion operating with less error but of lower density storage, and a second portion operating with a higher density but less robust storage. Input data is written and staged in the first portion before being copied to the second portion. An error management provides checking the quality of the copied data for excessive error bits. The copying and checking are repeated on a different location in the second portion until either a predetermined quality is satisfied or the number or repeats exceeds a predetermined limit. The error management is not started when a memory is new with little or no errors, but started after the memory has aged to a predetermined amount as determined by the number of erase/program cycling its has experienced.
摘要翻译：非易失性存储器中的数据错误不可避免地随着使用而增加，并且每个单元存储更高密度的位。存储器被配置为具有以较小误差但是较低密度存储器操作的第一部分，以及以较高密度但较不牢固的存储器操作的第二部分。在将第一部分复制到第二部分之前，输入数据被写入并分级。错误管理提供检查复制数据的质量是否存在过多的错误位。在第二部分中的不同位置重复复印和检查，直到满足预定质量或者数量或重复超过预定限度。当存储器是新的，几乎没有或没有错误时，错误管理不开始，但是在内存已经老化到由其经历的擦除/程序循环的数量确定的预定量之后开始。

6. 发明授权

US09053808B2 Flash memory with targeted read scrub algorithm 有权
标题翻译：具有目标读取擦除算法的闪存
公开(公告)号：US09053808B2
公开(公告)日：2015-06-09
申请号：US13529522
申请日：2012-06-21
申请人： Steven T. Sprouse , Alexandra Bauche , Yichao Huang , Jian Chen , Jianmin Huang , Dana Lee
发明人： Steven T. Sprouse , Alexandra Bauche , Yichao Huang , Jian Chen , Jianmin Huang , Dana Lee
IPC分类号： G06F11/00 , G11C16/34 , G11B20/18
CPC分类号： G11C16/3418 , G11B20/18 , G11B20/1883 , G11C16/3427 , G11C16/3431
摘要： A method and system have been described for counteracting and correcting for read disturb effects in blocks of flash memory. The method may include the step of a controller of the memory system performing a read scrub scan on only a portion of one targeted word line in a block at desired intervals. The controller may calculate whether a read scrub scan is necessary based on a probabilistic determination that is calculated in response to each received host read command. The controller may then place a block associated with the targeted word line into a refresh queue if a number of errors are detected in the targeted word line that meets or exceeds a predetermined threshold. The block refresh process may include copying the data from the block into a new block during a background operation.
摘要翻译：已经描述了用于抵消和校正闪速存储器块中的读取干扰效应的方法和系统。该方法可以包括存储器系统的控制器的步骤，其以期望的间隔仅在块中的一个目标字线的一部分上执行读取擦除扫描。控制器可以基于响应于每个接收的主机读取命令而计算的概率确定来计算是否需要读取擦除扫描。然后，如果在满足或超过预定阈值的目标字线中检测到多个错误，则控制器然后可以将与目标字线相关联的块放置到刷新队列中。块刷新过程可以包括在后台操作期间将数据从块复制到新块中。

7. 发明授权

US08473809B2 Data coding for improved ECC efficiency 有权
标题翻译：数据编码，提高ECC效率
公开(公告)号：US08473809B2
公开(公告)日：2013-06-25
申请号：US12839237
申请日：2010-07-19
申请人： Jun Wan , Alex Mak , Tien-Chien Kuo , Yan Li , Jian Chen
发明人： Jun Wan , Alex Mak , Tien-Chien Kuo , Yan Li , Jian Chen
IPC分类号： G06F11/00 , G11C29/00 , G11C7/00
CPC分类号： G11C11/5642 , G11C11/5628 , G11C29/00
摘要： Non-volatile storage devices and techniques for operating non-volatile storage are described herein. One embodiment includes accessing “n” pages of data to be programmed into a group of non-volatile storage elements. The “n” pages are mapped to a data state for each of the non-volatile storage elements based on a coding scheme that evenly distributes read errors across the “n” pages of data. Each of the non-volatile storage elements in the group are programmed to a threshold voltage range based on the data states to which the plurality of pages have been mapped. The programming may include programming the “n” pages simultaneously. In one embodiment, mapping the plurality of pages is based on a coding scheme that distributes a significant failure mode (for example, program disturb errors) to a first of the pages and a significant failure mode (for example, data retention errors) to a second of the pages.
摘要翻译：本文描述了用于操作非易失性存储器的非易失性存储设备和技术。一个实施例包括访问要编程到一组非易失性存储元件中的“n”页数据。基于在“n”页数据上均匀分布读取错误的编码方案，将“n”个页映射到每个非易失性存储元件的数据状态。基于已经映射了多个页面的数据状态，组中的每个非易失性存储元件被编程到阈值电压范围。编程可以包括同时对“n”页进行编程。在一个实施例中，映射多个页面是基于将显着的故障模式（例如，程序干扰错误）分配给第一页面的编码方案和将重大故障模式（例如，数据保留错误）分配给第二页。

8. 发明授权

US07616499B2 Retention margin program verification 有权
标题翻译：保留保证金计划验证
公开(公告)号：US07616499B2
公开(公告)日：2009-11-10
申请号：US11617541
申请日：2006-12-28
申请人： Jun Wan , Jeffrey W. Lutze , Jian Chen , Yan Li , Alex Mak
发明人： Jun Wan , Jeffrey W. Lutze , Jian Chen , Yan Li , Alex Mak
IPC分类号： G11C11/34 , G11C16/04 , G11C16/06
CPC分类号： G11C16/0483 , G11C11/5628 , G11C16/3454 , G11C16/3459 , G11C2211/5621
摘要： Data verification in a memory device using a portion of a data retention margin is provided. A bit count is read from the region to determine whether errors will result in the memory. A read in one or more retention margin portions is performed after the normal program verify sequence and if the number of bits in these regions is more than a pre-set the memory will fail verify status. A method of verifying data in a memory device includes the steps of: defining an retention margin between adjacent data thresholds; programming the memory device with data; determining whether bits are present in the data retention margin; and if the number of bits in the retention margin exceeds a threshold, generating an error.
摘要翻译：提供了使用部分数据保留余量的存储器件中的数据验证。从区域读取位计数，以确定错误是否会导致内存。在正常程序验证序列之后执行在一个或多个保留边缘部分中的读取，并且如果这些区域中的位数大于预设，则存储器将失败验证状态。验证存储器件中的数据的方法包括以下步骤：定义相邻数据阈值之间的保留余量; 使用数据对存储设备进行编程; 确定位是否存在于数据保留余量中; 并且如果保留余量中的比特数超过阈值，则产生错误。

9. 发明申请

US20110126080A1 DATA CODING FOR IMPROVED ECC EFFICIENCY 有权
标题翻译：数据编码提高ECC效率
公开(公告)号：US20110126080A1
公开(公告)日：2011-05-26
申请号：US12839237
申请日：2010-07-19
申请人： Jun Wan , Alex Mak , Tien-Chien Kuo , Yan Li , Jian Chen
发明人： Jun Wan , Alex Mak , Tien-Chien Kuo , Yan Li , Jian Chen
IPC分类号： G06F12/02 , H03M13/05 , G06F11/10
CPC分类号： G11C11/5642 , G11C11/5628 , G11C29/00
摘要： Non-volatile storage devices and techniques for operating non-volatile storage are described herein. One embodiment includes accessing “n” pages of data to be programmed into a group of non-volatile storage elements. The “n” pages are mapped to a data state for each of the non-volatile storage elements based on a coding scheme that evenly distributes read errors across the “n” pages of data. Each of the non-volatile storage elements in the group are programmed to a threshold voltage range based on the data states to which the plurality of pages have been mapped. The programming may include programming the “n” pages simultaneously. In one embodiment, mapping the plurality of pages is based on a coding scheme that distributes a significant failure mode (for example, program disturb errors) to a first of the pages and a significant failure mode (for example, data retention errors) to a second of the pages.
摘要翻译：本文描述了用于操作非易失性存储器的非易失性存储设备和技术。一个实施例包括访问要编程到一组非易失性存储元件中的“n”页数据。基于在“n”页数据上均匀分布读取错误的编码方案，将“n”个页映射到每个非易失性存储元件的数据状态。基于已经映射了多个页面的数据状态，组中的每个非易失性存储元件被编程到阈值电压范围。编程可以包括同时对“n”页进行编程。在一个实施例中，映射多个页面是基于将显着的故障模式（例如，程序干扰错误）分配给第一页面的编码方案和将重大故障模式（例如，数据保留错误）分配给第二页。

10. 发明授权

US07652918B2 Retention margin program verification 有权
标题翻译：保留保证金计划验证
公开(公告)号：US07652918B2
公开(公告)日：2010-01-26
申请号：US11617546
申请日：2006-12-28
申请人： Jun Wan , Jeffrey W. Lutze , Jian Chen , Yan Li , Alex Mak
发明人： Jun Wan , Jeffrey W. Lutze , Jian Chen , Yan Li , Alex Mak
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/3459 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/3454 , G11C2211/5621
摘要： A memory system, comprising an array of storage elements divided into logical blocks and pages within said logical blocks and a managing circuit is provided. The managing circuit is in communication with said array of storage elements and performs programming and reading operations. The programming operations include programming a plurality of multi-state storage data. The reading operations include defining an retention margin between adjacent data thresholds, determining whether bits are present in a portion of the data retention margin, and if the number of bits in the portion of retention margin exceeds a threshold, generating an error.
摘要翻译：一种存储器系统，包括分成逻辑块的存储元件阵列和所述逻辑块内的页面，并且提供管理电路。管理电路与所述存储元件阵列通信并执行编程和读取操作。编程操作包括编程多个多状态存储数据。读取操作包括定义相邻数据阈值之间的保留余量，确定位是否存在于数据保留余量的一部分中，以及如果保留余量部分中的位数超过阈值，则产生错误。

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