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1. 发明申请

US20110099460A1 Non-Volatile Memory And Method With Post-Write Read And Adaptive Re-Write To Manage Errors 有权
标题翻译：非易失性存储器和具有后写入读取和自适应重写的方法来管理错误
公开(公告)号：US20110099460A1
公开(公告)日：2011-04-28
申请号：US12642728
申请日：2009-12-18
申请人： Gautam Ashok Dusija , Jian Chen , Chris Avila , Jianmin Huang , Lee M. Gavens
发明人： Gautam Ashok Dusija , Jian Chen , Chris Avila , Jianmin Huang , Lee M. Gavens
IPC分类号： G11C29/52 , G06F11/10 , G06F12/16 , G06F12/00
CPC分类号： G11C11/5621 , G11C16/10 , G11C16/349 , G11C16/3495 , G11C29/00 , G11C2211/5641
摘要： Data errors in non-volatile memory inevitably increase with usage and with higher density of bits stored per cell. The memory is configured to have a first portion operating with less error but of lower density storage, and a second portion operating with a higher density but less robust storage. Input data is written and staged in the first portion before being copied to the second portion. An error management provides checking the quality of the copied data for excessive error bits. The copying and checking are repeated on a different location in the second portion until either a predetermined quality is satisfied or the number or repeats exceeds a predetermined limit. The error management is not started when a memory is new with little or no errors, but started after the memory has aged to a predetermined amount as determined by the number of erase/program cycling its has experienced.
摘要翻译：非易失性存储器中的数据错误不可避免地随着使用而增加，并且每个单元存储更高密度的位。存储器被配置为具有以较小误差但是较低密度存储器操作的第一部分，以及以较高密度但较不牢固的存储器操作的第二部分。在将第一部分复制到第二部分之前，输入数据被写入并分级。错误管理提供检查复制数据的质量是否存在过多的错误位。在第二部分中的不同位置重复复印和检查，直到满足预定质量或者数量或重复超过预定限度。当存储器是新的，几乎没有或没有错误时，错误管理不开始，但是在内存已经老化到由其经历的擦除/程序循环的数量确定的预定量之后开始。

2. 发明授权

US08423866B2 Non-volatile memory and method with post-write read and adaptive re-write to manage errors 有权
标题翻译：非易失性存储器和具有后写入读取和自适应重写的方法来管理错误
公开(公告)号：US08423866B2
公开(公告)日：2013-04-16
申请号：US12642728
申请日：2009-12-18
申请人： Gautam Ashok Dusija , Jian Chen , Chris Avila , Jianmin Huang , Lee M. Gavens
发明人： Gautam Ashok Dusija , Jian Chen , Chris Avila , Jianmin Huang , Lee M. Gavens
IPC分类号： G06F11/00
CPC分类号： G11C11/5621 , G11C16/10 , G11C16/349 , G11C16/3495 , G11C29/00 , G11C2211/5641
摘要： Data errors in non-volatile memory inevitably increase with usage and with higher density of bits stored per cell. The memory is configured to have a first portion operating with less error but of lower density storage, and a second portion operating with a higher density but less robust storage. Input data is written and staged in the first portion before being copied to the second portion. An error management provides checking the quality of the copied data for excessive error bits. The copying and checking are repeated on a different location in the second portion until either a predetermined quality is satisfied or the number or repeats exceeds a predetermined limit. The error management is not started when a memory is new with little or no errors, but started after the memory has aged to a predetermined amount as determined by the number of erase/program cycling its has experienced.
摘要翻译：非易失性存储器中的数据错误不可避免地随着使用而增加，并且每个单元存储更高密度的位。存储器被配置为具有以较小误差但是较低密度存储器操作的第一部分，以及以较高密度但较不牢固的存储器操作的第二部分。在将第一部分复制到第二部分之前，输入数据被写入并分级。错误管理提供检查复制数据的质量是否存在过多的错误位。在第二部分中的不同位置重复复印和检查，直到满足预定质量或者数量或重复超过预定限度。当存储器是新的，几乎没有或没有错误时，错误管理不开始，但是在内存已经老化到由其经历的擦除/程序循环的数量确定的预定量之后开始。

3. 发明授权

US08634240B2 Non-volatile memory and method with accelerated post-write read to manage errors 有权
标题翻译：非易失性存储器和加速写入后读取管理错误的方法
公开(公告)号：US08634240B2
公开(公告)日：2014-01-21
申请号：US12874064
申请日：2010-09-01
申请人： Lee M. Gavens , Jian Chen
发明人： Lee M. Gavens , Jian Chen
IPC分类号： G11C16/06
CPC分类号： G11C11/5628 , G11C16/3418 , G11C16/3454 , G11C29/00 , G11C2211/5621 , G11C2211/5641
摘要： Data errors in non-volatile memory inevitably increase with usage and with higher density of bits stored per cell. The memory is configured to have a first portion operating with less error but of lower density storage, and a second portion operating with a higher density but less robust storage. An error management provides reading and checking the copy after copying to the second portion. If the copy has excessive error bits, it is repeated in a different location either in the second or first portion. The reading and checking of the copy is accelerated by reading only a sample of it. The sample is selected from a subset of the copy having its own ECC and estimated to represent a worst error rate among the copy it is sampling. One embodiment has the sample taken from one bit of each multi-bit memory cell of a group.
摘要翻译：非易失性存储器中的数据错误不可避免地随着使用而增加，并且每个单元存储更高密度的位。存储器被配置为具有以较小误差但是较低密度存储器操作的第一部分，以及以较高密度但较不牢固的存储器操作的第二部分。错误管理在复制到第二部分后提供读取和检查副本。如果副本具有过多的错误位，则在第二或第一部分的不同位置重复该复制。通过只读取样本来读取和检查副本。从具有其自己的ECC的副本的子集中选择该样本，并且估计该样本表示其正在采样的副本中的最差错误率。一个实施例具有取自组中的每个多位存储器单元的一位的样本。

4. 发明申请

US20110096601A1 Non-Volatile Memory And Method With Accelerated Post-Write Read To Manage Errors 有权
标题翻译：非易失性存储器和加速后写入读取管理错误的方法
公开(公告)号：US20110096601A1
公开(公告)日：2011-04-28
申请号：US12874064
申请日：2010-09-01
申请人： Lee M. Gavens , Jian Chen
发明人： Lee M. Gavens , Jian Chen
IPC分类号： G11C16/06
CPC分类号： G11C11/5628 , G11C16/3418 , G11C16/3454 , G11C29/00 , G11C2211/5621 , G11C2211/5641
摘要： Data errors in non-volatile memory inevitably increase with usage and with higher density of bits stored per cell. The memory is configured to have a first portion operating with less error but of lower density storage, and a second portion operating with a higher density but less robust storage. An error management provides reading and checking the copy after copying to the second portion. If the copy has excessive error bits, it is repeated in a different location either in the second or first portion. The reading and checking of the copy is accelerated by reading only a sample of it. The sample is selected from a subset of the copy having its own ECC and estimated to represent a worst error rate among the copy it is sampling. One embodiment has the sample taken from one bit of each multi-bit memory cell of a group.
摘要翻译：非易失性存储器中的数据错误不可避免地随着使用而增加，并且每个单元存储更高密度的位。存储器被配置为具有以较小误差但是较低密度存储器操作的第一部分，以及以较高密度但较不牢固的存储器操作的第二部分。错误管理在复制到第二部分后提供读取和检查副本。如果副本具有过多的错误位，则在第二或第一部分的不同位置重复该复制。通过只读取样本来读取和检查副本。从具有其自己的ECC的副本的子集中选择该样本，并且估计该样本表示其正在采样的副本中的最差错误率。一个实施例具有取自组中的每个多位存储器单元的一位的样本。

5. 发明申请

US20130346805A1 FLASH MEMORY WITH TARGETED READ SCRUB ALGORITHM 有权
标题翻译：具有指定读取SCRUB算法的闪存
公开(公告)号：US20130346805A1
公开(公告)日：2013-12-26
申请号：US13529522
申请日：2012-06-21
申请人： Steven T. Sprouse , Alexandra Bauche , Yichao Huang , Jian Chen , Jianmin Huang , Dana Lee
发明人： Steven T. Sprouse , Alexandra Bauche , Yichao Huang , Jian Chen , Jianmin Huang , Dana Lee
IPC分类号： G06F11/28
CPC分类号： G11C16/3418 , G11B20/18 , G11B20/1883 , G11C16/3427 , G11C16/3431
摘要： A method and system have been described for counteracting and correcting for read disturb effects in blocks of flash memory. The method may include the step of a controller of the memory system performing a read scrub scan on only a portion of one targeted word line in a block at desired intervals. The controller may calculate whether a read scrub scan is necessary based on a probabilistic determination that is calculated in response to each received host read command. The controller may then place a block associated with the targeted word line into a refresh queue if a number of errors are detected in the targeted word line that meets or exceeds a predetermined threshold. The block refresh process may include copying the data from the block into a new block during a background operation.
摘要翻译：已经描述了用于抵消和校正闪速存储器块中的读取干扰效应的方法和系统。该方法可以包括存储器系统的控制器的步骤，其以期望的间隔仅在块中的一个目标字线的一部分上执行读取擦除扫描。控制器可以基于响应于每个接收的主机读取命令而计算的概率确定来计算是否需要读取擦除扫描。然后，如果在满足或超过预定阈值的目标字线中检测到多个错误，则控制器然后可以将与目标字线相关联的块放置到刷新队列中。块刷新过程可以包括在后台操作期间将数据从块复制到新块中。

6. 发明授权

US08693259B2 Wordline-to-wordline stress configuration 有权
标题翻译：字线到字线应力配置
公开(公告)号：US08693259B2
公开(公告)日：2014-04-08
申请号：US13340437
申请日：2011-12-29
申请人： Mrinal Kochar , Jianmin Huang , Jun Wan , Jian Chen
发明人： Mrinal Kochar , Jianmin Huang , Jun Wan , Jian Chen
IPC分类号： G11C16/06
CPC分类号： G11C29/06 , G11C16/00 , G11C2029/1202
摘要： A method and system for performing wordline-to-wordline stress routines on a storage device is disclosed. Stress routines may be performed to reduce state widening in multi-level memory cells in the storage device. However, data retention problems may result if the stress routines are performed too often. In order to perform the stress routines at the proper times, a stress control variable is used. The stress control variable may be indicative of age of the storage device (such as the number of erase cycles performed on a memory block in the storage device). The stress control variable is input to a look-up table (or other logical construct), with the output of the look-up table indicating whether to perform the wordline-to-wordline stress routine. In this way, the stress routines may be performed to reduce state widening while reducing the ill effects of data retention.
摘要翻译：公开了一种用于在存储设备上执行字线到字线应力程序的方法和系统。可以执行应力程序以减少存储设备中的多级存储器单元中的状态变宽。但是，如果压力程序太频繁地执行，则可能会导致数据保留问题。为了在适当的时候执行压力程序，使用应力控制变量。应力控制变量可以指示存储设备的年龄（例如在存储设备中的存储器块上执行的擦除周期的数量）。压力控制变量被输入到查找表（或其他逻辑结构），查找表的输出指示是否执行字线到字线应力程序。以这种方式，可以执行应力程序以减少状态扩大，同时减少数据保留的不良影响。

7. 发明申请

US20130170301A1 Wordline-to-Wordline Stress Configuration 有权
标题翻译： Wordline到Wordline应力配置
公开(公告)号：US20130170301A1
公开(公告)日：2013-07-04
申请号：US13340437
申请日：2011-12-29
申请人： Mrinal Kochar , Jianmin Huang , Jun Wan , Jian Chen
发明人： Mrinal Kochar , Jianmin Huang , Jun Wan , Jian Chen
IPC分类号： G11C29/00
CPC分类号： G11C29/06 , G11C16/00 , G11C2029/1202
摘要： A method and system for performing wordline-to-wordline stress routines on a storage device is disclosed. Stress routines may be performed to reduce state widening in multi-level memory cells in the storage device. However, data retention problems may result if the stress routines are performed too often. In order to perform the stress routines at the proper times, a stress control variable is used. The stress control variable may be indicative of age of the storage device (such as the number of erase cycles performed on a memory block in the storage device). The stress control variable is input to a look-up table (or other logical construct), with the output of the look-up table indicating whether to perform the wordline-to-wordline stress routine. In this way, the stress routines may be performed to reduce state widening while reducing the ill effects of data retention.
摘要翻译：公开了一种用于在存储设备上执行字线到字线应力程序的方法和系统。可以执行应力程序以减少存储设备中的多级存储器单元中的状态变宽。但是，如果压力程序太频繁地执行，则可能会导致数据保留问题。为了在适当的时候执行压力程序，使用应力控制变量。应力控制变量可以指示存储设备的年龄（例如在存储设备中的存储器块上执行的擦除周期的数量）。压力控制变量被输入到查找表（或其他逻辑结构），查找表的输出指示是否执行字线到字线应力程序。以这种方式，可以执行应力程序以减少状态扩大，同时减少数据保留的不良影响。

8. 发明授权

US09053808B2 Flash memory with targeted read scrub algorithm 有权
标题翻译：具有目标读取擦除算法的闪存
公开(公告)号：US09053808B2
公开(公告)日：2015-06-09
申请号：US13529522
申请日：2012-06-21
申请人： Steven T. Sprouse , Alexandra Bauche , Yichao Huang , Jian Chen , Jianmin Huang , Dana Lee
发明人： Steven T. Sprouse , Alexandra Bauche , Yichao Huang , Jian Chen , Jianmin Huang , Dana Lee
IPC分类号： G06F11/00 , G11C16/34 , G11B20/18
CPC分类号： G11C16/3418 , G11B20/18 , G11B20/1883 , G11C16/3427 , G11C16/3431
摘要： A method and system have been described for counteracting and correcting for read disturb effects in blocks of flash memory. The method may include the step of a controller of the memory system performing a read scrub scan on only a portion of one targeted word line in a block at desired intervals. The controller may calculate whether a read scrub scan is necessary based on a probabilistic determination that is calculated in response to each received host read command. The controller may then place a block associated with the targeted word line into a refresh queue if a number of errors are detected in the targeted word line that meets or exceeds a predetermined threshold. The block refresh process may include copying the data from the block into a new block during a background operation.
摘要翻译：已经描述了用于抵消和校正闪速存储器块中的读取干扰效应的方法和系统。该方法可以包括存储器系统的控制器的步骤，其以期望的间隔仅在块中的一个目标字线的一部分上执行读取擦除扫描。控制器可以基于响应于每个接收的主机读取命令而计算的概率确定来计算是否需要读取擦除扫描。然后，如果在满足或超过预定阈值的目标字线中检测到多个错误，则控制器然后可以将与目标字线相关联的块放置到刷新队列中。块刷新过程可以包括在后台操作期间将数据从块复制到新块中。

9. 外观设计

USD1008676S1 Step-stool 有权
公开(公告)号：USD1008676S1
公开(公告)日：2023-12-26
申请号：US29820654
申请日：2021-12-23
申请人： Jian Chen
设计人： Jian Chen
摘要： FIG. 1 is a perspective view of a step-stool showing my new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left side view thereof;
FIG. 5 is a right side view thereof;
FIG. 6 is a top view thereof;
FIG. 7 is a bottom view thereof;
FIG. 8 is a bottom side perspective view thereof; and,
FIG. 9 is a perspective view of the step-stool of FIG. 1, shown with unclaimed patterned ornamentation.
The broken lines in the drawings depict portions of the step-stool that form no part of the claimed design.

10. 发明申请

US20200032191A1 Shock Tube and Cell Electroporation Device with the Shock Tube 审中-公开
公开(公告)号：US20200032191A1
公开(公告)日：2020-01-30
申请号：US16586989
申请日：2019-09-29
申请人： Jian Chen
发明人： Jian Chen
IPC分类号： C12M1/42 , C12M1/12 , B01L3/00
摘要： The shock tube comprises a tube, a first electrode, a second electrode and a stopple, wherein the tube is internally provided with a cavity for accommodating a target liquid sample. The first electrode is arranged at one end of the tube. The second electrode is arranged in the stopple, and the outer end of the second electrode can be electrically connected with the exterior via an opening of the stopple. The stopple is internally provided with an elastic piece connected with the second electrode. The outer side of the elastic piece is connected with the stopple, and the inner side of the elastic piece is connected with the second electrode. The invention further provides a cell electroporation device where the shock tube can be placed.

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