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1. 发明授权

US5068605A Semiconductor integrated circuit device and method of testing the same 失效
标题翻译：半导体集成电路器件及其测试方法
公开(公告)号：US5068605A
公开(公告)日：1991-11-26
申请号：US404355
申请日：1989-09-07
申请人： Moritoshi Yasunaga , Noboru Masuda , Hideo Todokoro , Yasunari Umemoto , Hirotoshi Tanaka , Hiroyuki Itoh
发明人： Moritoshi Yasunaga , Noboru Masuda , Hideo Todokoro , Yasunari Umemoto , Hirotoshi Tanaka , Hiroyuki Itoh
IPC分类号： G01R31/28 , G01R31/30 , G01R31/302 , G01R31/305 , G01R31/3185 , H01L21/66 , H01L21/82 , H01L21/822 , H01L27/04
CPC分类号： G01R31/305 , G01R31/30 , G01R31/318516
摘要： A semiconductor integrated circuit device includes: input terminals; output terminals; a group of gates which receives an input signal applied to the input terminals and outputs an output signal from the output terminals, the output signal corresponding to the state of the input signal; and an arrangement for forcibly setting the output of each gate constituting the group either at a "1" level or at a "0" level irrespective of the state of the input signal and the state of an input signal to each gate. The arrangement for forcibly setting the output is an arrangement for changing the potential of a semiconductor substrate in which each gate is formed. This arrangement for changing potential includes an impurity doped region formed in the semiconductor substrate, the impurity doped region surrounding at least a transistor constituting each gate so as to apply a potential to the transistor, and a terminal for applying the potential to the impurity doped region. The semiconductor integrated circuit device according to another aspect includes an observation pad formed on a portion of at least one of the output and input areas of each gate, the observation pad being exposed without being covered with an insulator layer and the potential of the observation pad being observed as a difference of shading by using an electron or ion beam tester. A fault of each gate can be detected in accordance with a shading image of the observation pads.
摘要翻译：半导体集成电路装置包括：输入端子; 输出端子; 一组门，其接收施加到输入端的输入信号，并输出来自输出端的输出信号，输出信号对应于输入信号的状态; 以及用于强制地将构成组的每个门的输出强制设置为“1”电平或“0”电平的装置，而与输入信号的状态和每个门的输入信号的状态无关。用于强制设置输出的布置是用于改变其中形成每个栅极的半导体衬底的电位的布置。这种用于变化电位的布置包括形成在半导体衬底中的杂质掺杂区域，至少构成每个栅极的晶体管的杂质掺杂区域，以便向晶体管施加电位，以及将电位施加到杂质掺杂区域。根据另一方面的半导体集成电路器件包括形成在每个栅极的输出和输入区域中的至少一个的一部分上的观察垫，观察垫被暴露而不被绝缘体层覆盖，并且观察垫的电位通过使用电子或离子束测试仪被观察为阴影的差异。可以根据观察垫的阴影图像来检测每个门的故障。

2. 发明授权

US5468969A Method and apparatus for electron beam lithography 失效
标题翻译：电子束光刻的方法和装置
公开(公告)号：US5468969A
公开(公告)日：1995-11-21
申请号：US153157
申请日：1993-11-17
申请人： Hiroyuki Itoh , Hideo Todokoro , Yasunari Sohda , Yoshinori Nakayama
发明人： Hiroyuki Itoh , Hideo Todokoro , Yasunari Sohda , Yoshinori Nakayama
IPC分类号： G03F7/20 , H01J37/147 , H01J37/304 , H01J37/305 , H01L21/027 , H01J37/04
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/0458 , H01J2237/30455 , H01J2237/31776
摘要： Electron beam lithography for exposure of a group of elemental openings in a collective-exposure shaping diaphragm is intended to correct the positional deviation of the group of elemental openings quickly and economically.A rectangular beam is formed by rectangle openings made in a rectangle forming diaphragm and a group of elemental openings in a collective-exposure shaping diaphragm and used for irradiating a reference mark on a workpiece stand. Electrons reflected from the reference mark are detected by a reflecting electron detector to calculate errors in the configuration and position of the rectangular beam. The results of calculation are fed back to a shaping deflector and a positioning deflector to correct errors in the configuration and position of the rectangular beam, respectively. Moreover, an arrangement of the groups of elemental openings is detected by mechanically scanning the collective-exposure shaping diaphragm so as to correct an error in the rotation of the collective-exposure shaping diaphragm.
摘要翻译：用于在集体曝光成形膜中暴露一组元素开口的电子束光刻旨在快速且经济地校正元件组的组的位置偏差。矩形梁由矩形形成的隔膜中的矩形开口和集体曝光成形隔膜中的一组元件开口形成，用于在工件支架上照射基准标记。从参考标记反射的电子被反射电子检测器检测，以计算矩形波束的配置和位置的误差。将计算结果反馈给成形偏转器和定位偏转器，以分别校正矩形梁的构型和位置中的误差。此外，通过机械地扫描集体曝光成形光阑来检测元件开口组的布置，以便校正集合曝光成型膜片的旋转中的误差。

3. 发明授权

US5283440A Electron beam writing system used in a cell projection method 失效
标题翻译：电子束写入系统用于单元投影法
公开(公告)号：US5283440A
公开(公告)日：1994-02-01
申请号：US770527
申请日：1991-10-03
申请人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
发明人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
IPC分类号： H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/049 , H01J2237/1532 , H01J2237/30455 , H01J2237/31776
摘要： An electron beam writing system is used in variable shaping and cell projection methods to produce LSI and reticles. In the cell projection method, the beam is deflected to define a writing position. In the time it takes to define the writing position, an operation of forming the beam is concluded, which operation includes the deflection of the beam to select a cell graphic, re-deflection for correcting the origin position of the written graphic, astigmatism correction of the written graphic, and focus correction for reducing the Coulomb effect. An electrostatic deflector is used as the deflector for the cell graphic selection. The arrangement of graphics includes a square aperture centrally located with a group of cell projection apertures positioned adjacent two sides of the square aperture.
摘要翻译：电子束写入系统用于可变整形和电池投影方法以产生LSI和光罩。在单元投影方法中，光束被偏转以限定写入位置。在定义写入位置的时候，结束了形成光束的操作，其操作包括光束的偏转以选择单元图形，用于校正写入图形的原点位置的重新偏转，散光校正书面图形和焦点校正，以减少库仑效应。静电偏转器用作细胞图形选择的偏转器。图形的布置包括中心定位的方孔，其中一组单元突出孔定位成邻近正方形孔的两侧。

4. 发明授权

US5387799A Electron beam writing system 失效
标题翻译：电子束写入系统
公开(公告)号：US5387799A
公开(公告)日：1995-02-07
申请号：US885608
申请日：1992-05-19
申请人： Yasunari Sohda , Hideo Todokoro , Hiroyuki Itoh , Shinichi Kato
发明人： Yasunari Sohda , Hideo Todokoro , Hiroyuki Itoh , Shinichi Kato
IPC分类号： H01J37/21 , H01J37/30 , H01J37/305 , H01L21/027 , G21K1/093
CPC分类号： H01J37/3007 , H01J2237/04924 , H01J2237/30461 , H01J2237/3175
摘要： An electron beam writing system which permits a relatively low voltage to be applied to perform high speed focus correction with high accuracy. The electron beam writing system includes a focus corrector arranged inside a lens which provides the largest product of the magnification factors of the lens and all succeeding lenses and the optical path length of the lens at issue. Thus, the electron beam provides high sensitivity and a small change in the magnification ratio due to the correction.
摘要翻译：一种允许施加相对较低电压以高精度执行高速聚焦校正的电子束写入系统。电子束写入系统包括布置在透镜内部的聚焦校正器，其提供透镜的放大系数和所有后续透镜的最大乘积以及所涉及的透镜的光路长度。因此，由于校正，电子束提供高灵敏度和放大率的小的变化。

5. 发明授权

US08835844B2 Sample electrification measurement method and charged particle beam apparatus 有权
标题翻译：样品充电测量方法和带电粒子束装置
公开(公告)号：US08835844B2
公开(公告)日：2014-09-16
申请号：US12710679
申请日：2010-02-23
申请人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
发明人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
IPC分类号： G01N23/04 , G01N23/225 , H01J37/28 , H01J37/244 , H01J37/21 , H01J37/26
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： The present invention has the object of providing charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
摘要翻译：本发明的目的是提供一种理想的减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动由于在指定位置处的静电电荷的波动而发生。

6. 发明授权

US08604430B2 Method and an apparatus of an inspection system using an electron beam 有权
标题翻译：使用电子束的检查系统的方法和装置
公开(公告)号：US08604430B2
公开(公告)日：2013-12-10
申请号：US13366874
申请日：2012-02-06
申请人： Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
发明人： Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , G01N23/20 , G01N23/2251 , G03F7/7065 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01J37/04 , H01J37/20 , H01J37/265 , H01J2237/04756 , H01J2237/20221 , H01J2237/2444 , H01J2237/24592 , H01J2237/2817 , H01J2237/31766
摘要： The inspection apparatus disclosed generates an electron beam, an acceleration electrode accelerates the electron beam, a convergence lens converges the electron beam, an electron beam deflector scans the beam over a sample, an objective lens converges the electron beam on the sample, a detector located between the sample and the objective lens detects charged particles emitted from the sample, a power supply applies a retarding voltage to the sample for decelerating the electron beam to the sample, an electrode is disposed between the objective lens and the sample, and a voltage is generated between the sample and the electrode by said electrode, the voltage being determined depending on the sample. The apparatus solves problems encountered in conventional inspection systems.
摘要翻译：所公开的检查装置产生电子束，加速电极加速电子束，会聚透镜会聚电子束，电子束偏转器扫描样品上的光束，物镜会将电子束会聚在样品上，检测器位于在样品和物镜之间检测从样品发射的带电粒子，电源向样品施加延迟电压以将电子束减速到样品，电极设置在物镜和样品之间，电压为通过所述电极在样品和电极之间产生，电压根据样品确定。该装置解决了常规检测系统遇到的问题。

7. 发明授权

US07977632B2 Scanning electron microscope 有权
标题翻译：扫描电子显微镜
公开(公告)号：US07977632B2
公开(公告)日：2011-07-12
申请号：US12253476
申请日：2008-10-17
申请人： Hideo Todokoro , Makoto Ezumi , Yasutsugu Usami
发明人： Hideo Todokoro , Makoto Ezumi , Yasutsugu Usami
IPC分类号： G21K7/00
CPC分类号： H01J37/28 , H01J37/026 , H01J2237/0045 , H01J2237/0048 , H01J2237/04735 , H01J2237/04756 , H01J2237/281 , H01J2237/31701
摘要： To make it possible to observe the bottom of a contact hole and internal wires, in observation of the contact hole 102, by scanning it at a predetermined acceleration voltage, the positive charge 106 is formed on the surface of the insulator 101, and the secondary electrons 104 are attracted in the hole by this electric field, and the hole is continuously scanned at an acceleration voltage different from the acceleration voltage, and the sample is observed. When the wires embedded in the insulator are to be observed, by observing the insulator at a predetermined acceleration voltage, an electron beam is allowed to enter the sample, and the sample is continuously scanned at an acceleration voltage different from the acceleration voltage, and hence the existence of wires is reflected as a change in the charge of the surface, and it is observed. In either case, the acceleration voltage before observation is different from the one during observation, and the sample surface is temporarily radiated at an acceleration voltage positively generating a positive or negative charge, and thereafter, the acceleration voltage is returned to a one suited to observation, and the sample is observed.
摘要翻译：为了可以观察接触孔和内部电线的底部，在观察接触孔102时，通过以预定的加速电压扫描，正电荷106形成在绝缘体101的表面上，次级电子104通过该电场被吸引在孔中，并且以与加速电压不同的加速电压连续地扫描孔，并且观察样品。当要观察嵌入在绝缘体中的电线时，通过以预定的加速电压观察绝缘体，允许电子束进入样品，并且以不同于加速电压的加速电压连续扫描样品，因此电线的存在被反映为表面电荷的变化，并且被观察。在任一种情况下，观察前的加速电压与观察期间的加速电压不同，并且以正向或正负电荷的正电荷的加速电压暂时照射样品表面，然后将加速电压恢复为适合于观察的加速电压，并观察样品。

8. 发明授权

US07838827B2 Monochromator and scanning electron microscope using the same 有权
标题翻译：单色器和扫描电子显微镜使用相同
公开(公告)号：US07838827B2
公开(公告)日：2010-11-23
申请号：US11987018
申请日：2007-11-26
申请人： Yoichi Ose , Shunroku Taya , Hideo Todokoro , Tadashi Otaka , Mitsugu Sato , Makoto Ezumi
发明人： Yoichi Ose , Shunroku Taya , Hideo Todokoro , Tadashi Otaka , Mitsugu Sato , Makoto Ezumi
IPC分类号： H01J37/05
CPC分类号： H01J37/05 , H01J37/153 , H01J37/28
摘要： An invention providing a scanning electron microscope composed of a monochromator capable of high resolution, monochromatizing the energy and reducing chromatic aberrations without significantly lowering the electrical current strength of the primary electron beam. A scanning electron microscope is installed with a pair of sectorial magnetic and electrical fields having opposite deflection directions to focus the electron beam and then limit the energy width by means of slits, and another pair of sectorial magnetic and electrical fields of the same shape is installed at a position forming a symmetrical mirror versus the surface containing the slits. This structure acts to cancel out energy dispersion at the object point and symmetrical mirror positions, and by spatially contracting the point-converged spot beam with a converging lens system, improves the image resolution of the scanning electron microscope.
摘要翻译：本发明提供一种扫描电子显微镜，该扫描电子显微镜由能够高分辨率，单色化能量和降低色差的单色仪组成，而不会显着降低一次电子束的电流强度。扫描电子显微镜安装有一对具有相反偏转方向的扇形磁场和电场，以聚焦电子束，然后通过狭缝限制能量宽度，并且安装相同形状的另一对扇形磁场和电场在与包含狭缝的表面形成对称镜的位置处。该结构用于抵消物点和对称镜位置的能量分散，并通过会聚透镜系统空间收缩点聚光点光束，提高扫描电子显微镜的图像分辨率。

9. 发明授权

US07800059B2 Method of forming a sample image and charged particle beam apparatus 有权
标题翻译：形成样品图像和带电粒子束装置的方法
公开(公告)号：US07800059B2
公开(公告)日：2010-09-21
申请号：US12073359
申请日：2008-03-04
申请人： Mitsugu Sato , Atsushi Takane , Takashi Iizumi , Tadashi Otaka , Hideo Todokoro , Satoru Yamaguchi , Kazutaka Nimura
发明人： Mitsugu Sato , Atsushi Takane , Takashi Iizumi , Tadashi Otaka , Hideo Todokoro , Satoru Yamaguchi , Kazutaka Nimura
IPC分类号： G01N23/22 , H01J37/26 , H01J37/28 , G21K7/00
CPC分类号： G01N23/22 , H01J37/222 , H01J37/28
摘要： An object of the present invention is to provide a sample image forming method and a charged particle beam apparatus which are suitable for realizing suppressing of the view area displacement with high accuracy while the influence of charging due to irradiation of the charged particle beam is being suppressed.In order to attain the above object, the present invention provide a method of forming a sample image by scanning a charged particle beam on a sample and forming an image based on secondary signals emitted from the sample, the method comprising the steps of forming a plurality of composite images by superposing a plurality of images obtained by a plurality of scanning times; and forming a further composite image by correcting positional displacements among the plurality of composite images and superposing the plurality of composite images, and a charged particle beam apparatus for realizing the above method.
摘要翻译：本发明的目的是提供一种在抑制由于带电粒子束的照射引起的充电的影响被抑制的情况下，能够高精度地实现视区域位移的抑制的样本图像形成方法和带电粒子束装置。为了实现上述目的，本发明提供一种通过在样品上扫描带电粒子束并基于从样品发射的二次信号形成图像来形成样品图像的方法，该方法包括以下步骤：形成多个通过叠加通过多个扫描时间获得的多个图像的合成图像; 以及通过校正多个合成图像之间的位置偏移并叠加多个合成图像来形成另一个合成图像，以及用于实现上述方法的带电粒子束装置。

10. 发明授权

US07700918B2 Sample electrification measurement method and charged particle beam apparatus 有权
标题翻译：样品充电测量方法和带电粒子束装置
公开(公告)号：US07700918B2
公开(公告)日：2010-04-20
申请号：US12076355
申请日：2008-03-17
申请人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
发明人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
IPC分类号： G01N23/00 , H01J37/28 , G01R19/00
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
摘要翻译：本发明的目的是提供一种理想的用于减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动由于在指定位置处的静电电荷的波动而发生。

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