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1. 发明授权

US06272202B1 Exposure method and X-ray mask structure for use with the same 有权
标题翻译：曝光方法和X射线掩模结构使用相同
公开(公告)号：US06272202B1
公开(公告)日：2001-08-07
申请号：US09426945
申请日：1999-10-26
申请人： Keiko Chiba , Shunichi Uzawa , Mitsuaki Amemiya , Yutaka Watanabe
发明人： Keiko Chiba , Shunichi Uzawa , Mitsuaki Amemiya , Yutaka Watanabe
IPC分类号： G21K500
CPC分类号： G03F7/70325 , G03F1/22 , G03F1/50 , G03F7/001 , G03F7/2022 , G03F7/7035 , G03F7/70466
摘要： An exposure method for printing a pattern onto a workpiece to be exposed, includes a first exposure step for forming, on the workpiece and by exposure, a transferred image of a first absorbing material pattern formed on a mask and having no periodic structure, and a second exposure step for printing, on the workpiece and by exposure, a diffraction pattern to be produced through Fresnel diffraction due to a second absorbing material pattern formed on the mask and having a periodic structure, the diffraction pattern having a period corresponding to 1/n of a period of the transferred image of the periodic structure pattern, where n is an integer not less than 2, and wherein the first and second exposure steps are performed simultaneously.
摘要翻译：一种用于将图案印刷到要曝光的工件上的曝光方法包括：第一曝光步骤，用于在工件上形成并且通过曝光形成在掩模上形成并且不具有周期性结构的第一吸收材料图案的转印图像，以及第二曝光步骤，用于在工件上和通过曝光印刷由于在掩模上形成的具有周期性结构的第二吸收材料图案而通过菲涅耳衍射产生的衍射图案，衍射图案具有对应于1 / n的周期其中n是不小于2的整数，并且其中同时执行第一和第二曝光步骤。

2. 发明授权

US06455203B1 Mask structure and method of manufacturing the same 失效
标题翻译：面膜结构及其制造方法
公开(公告)号：US06455203B1
公开(公告)日：2002-09-24
申请号：US09545464
申请日：2000-04-07
申请人： Mitsuaki Amemiya , Shunichi Uzawa , Keiko Chiba
发明人： Mitsuaki Amemiya , Shunichi Uzawa , Keiko Chiba
IPC分类号： G03F900
CPC分类号： G03F9/00 , G03F1/22 , G03F7/2022
摘要： A mask manufacturing method includes performing a multiple exposure process to a substrate so that a number of latent images are formed on the substrate, and processing the exposed substrate to produce actual mask patterns, wherein the multiple exposure process includes a first exposure step for forming a latent image of relatively-fine periodic patterns on the substrate by use of a first master mask having absorptive periodic patterns, and a second exposure step for forming a latent image of relatively-rough patterns on the substrate by use of a second master mask having absorptive patterns.
摘要翻译：掩模制造方法包括对基板进行多次曝光处理，使得在基板上形成多个潜像，并处理曝光的基板以产生实际的掩模图案，其中多次曝光处理包括第一曝光步骤，用于形成通过使用具有吸收性周期性图案的第一主掩模在基板上的相对精细的周期性图案的潜像，以及第二曝光步骤，用于通过使用具有吸收性的第二主掩模在基板上形成相对粗糙的图案的潜像模式。

3. 发明授权

US06645707B2 Device manufacturing method 失效
标题翻译：器件制造方法
公开(公告)号：US06645707B2
公开(公告)日：2003-11-11
申请号：US09534334
申请日：2000-03-24
申请人： Mitsuaki Amemiya , Shunichi Uzawa , Keiko Chiba , Yutaka Watanabe
发明人： Mitsuaki Amemiya , Shunichi Uzawa , Keiko Chiba , Yutaka Watanabe
IPC分类号： G03C556
CPC分类号： G03F7/70466 , G03F7/2022
摘要： A device manufacturing method includes a first exposure step for executing a multiple exposure of a first layer of a substrate by use of plural first masks, a development step for developing the first layer of the substrate and a second exposure step, executed after the development step, for executing a multiple exposure of a second layer of the substrate by use of plural second masks. A portion of at least one of the first masks has a pattern the same as a pattern formed in a portion of at least one of the second masks.
摘要翻译：一种器件制造方法包括：第一曝光步骤，用于通过使用多个第一掩模来执行衬底的第一层的多次曝光;显影步骤，用于显影衬底的第一层;以及第二曝光步骤，在显影步骤之后执行，用于通过使用多个第二掩模来执行所述基板的第二层的多次曝光。第一掩模中的至少一个的一部分具有与形成在至少一个第二掩模的部分中的图案相同的图案。

4. 发明授权

US07027227B2 Three-dimensional structure forming method 失效
标题翻译：三维结构成型方法
公开(公告)号：US07027227B2
公开(公告)日：2006-04-11
申请号：US10761293
申请日：2004-01-22
申请人： Keiko Chiba , Kenichiro Mori
发明人： Keiko Chiba , Kenichiro Mori
IPC分类号： G02B27/10
CPC分类号： G03F7/168 , B29C64/129 , G02B3/0031 , G02B3/005 , G02B3/0056 , G03F7/0005 , G03F7/0017 , G03F7/0037
摘要： A method for forming a three-dimensional structure made of a photosensitive material on a substrate includes the steps of determining a film thickness of the photosensitive material necessary to form the desired three-dimensional structure, comparing a predetermined maximum film thickness with the film thickness determined by the determining step, and applying, when the film thickness determined by the determining step is greater than the predetermined maximum film thickness, the photosensitive material within the maximum film thickness plural times until the photosensitive material has the film thickness on the substrate.
摘要翻译：用于在基板上形成由感光材料制成的三维结构的方法包括以下步骤：确定形成所需三维结构所需的感光材料的膜厚度，将预定最大膜厚与确定的膜厚进行比较通过确定步骤，并且当由确定步骤确定的膜厚度大于预定最大膜厚度时，将最大膜厚度内的感光材料多次施加，直到感光材料在基板上具有膜厚度为止。

5. 发明授权

US5870448A X-ray mask and fabrication process using it 失效
标题翻译： X射线掩模和使用它的制作工艺
公开(公告)号：US5870448A
公开(公告)日：1999-02-09
申请号：US855473
申请日：1997-05-13
申请人： Hiroshi Maehara , Keiko Chiba
发明人： Hiroshi Maehara , Keiko Chiba
IPC分类号： G03F1/22 , G21K1/10 , H01L21/027 , G21K5/00
CPC分类号： G03F1/22 , G21K1/10
摘要： The present X-ray mask comprises an X-ray transmitting film, and a mask pattern formed on the X-ray transmitting film, wherein the mask pattern includes a mixture of a high-contrast pattern and a low-contrast pattern against X-rays and wherein the high-contrast pattern is comprised of stacked films the number of which is larger than that of the low-contrast pattern and which are made of different kinds of materials. A fabrication process of this X-ray mask comprises a step of forming a first metal film; a step of forming a second metal film of a different kind of material from the first metal film, thereon; and a step of successively performing a resist application process and an etching process to form a portion where the both first and second metal films are removed, a portion where only the first metal layer is left, and a portion where the both first and second metal layers are left, thereby forming a mask pattern.
摘要翻译：本X射线掩模包括X射线透射膜和形成在X射线透射膜上的掩模图案，其中掩模图案包括针对X射线的高对比度图案和低对比度图案的混合物并且其中所述高对比度图案包括数量大于所述低对比度图案并且由不同种类的材料制成的堆叠薄膜。该X射线掩模的制造工艺包括形成第一金属膜的步骤; 在其上形成与第一金属膜不同种类的材料的第二金属膜的步骤; 以及连续进行抗蚀剂涂布处理和蚀刻工序以形成去除了第一和第二金属膜两者的部分，仅剩下第一金属层的部分，以及第一和第二金属留下层，从而形成掩模图案。

6. 发明授权

US5733688A Lithographic mask structure and method of producing the same comprising W and molybdenum alloy absorber 失效
标题翻译：平版印刷掩模结构及其制造方法，包括W和钼合金吸收体
公开(公告)号：US5733688A
公开(公告)日：1998-03-31
申请号：US570686
申请日：1995-12-11
申请人： Hideo Kato , Masao Sugata , Keiko Chiba , Hiroshi Maehara
发明人： Hideo Kato , Masao Sugata , Keiko Chiba , Hiroshi Maehara
IPC分类号： G03F1/22 , G03F9/00
CPC分类号： G03F1/22
摘要： A mask suitably usable in X-ray lithography has a membrane and a radiation absorbing material pattern formed on the membrane, wherein the radiation absorbing material pattern contains an alloy including tungsten (W) and molybdenum (Mo), the proportion of the molybdenum content to the alloy being in a range of 0.1-50 wt %, the alloy having crystal precedence orientation of {110}. In one preferred form, the absorbing material pattern is provided on an amolphous metal layer formed on the mask membrane.
摘要翻译：适用于X射线光刻的掩模具有在膜上形成的膜和辐射吸收材料图案，其中辐射吸收材料图案包含包含钨（W）和钼（Mo）的合金，钼含量与该合金的范围为0.1-50wt％，晶体优先取向为{110}的合金。在一个优选形式中，吸收材料图案设置在形成在掩模膜上的淀粉金属层上。

7. 发明授权

US4735877A Lithographic mask structure and lithographic process 失效
标题翻译：平版印刷掩模结构和光刻工艺
公开(公告)号：US4735877A
公开(公告)日：1988-04-05
申请号：US915376
申请日：1986-10-06
申请人： Hideo Kato , Yoshie Izawa , Keiko Chiba
发明人： Hideo Kato , Yoshie Izawa , Keiko Chiba
IPC分类号： G03F1/22 , G03F7/20 , G03F7/10
CPC分类号： G03F1/22 , G03F7/7035 , G03F7/70375
摘要： There is disclosed a lithographic mask structure which comprises a masking material support film and an annular support substrate for supporting the masking material support film at the periphery, the masking material support film containing a fluorescent substance. Also disclosed is a lithographic process for exposing a photosensitive material to irradiation with a radiation beam through a masking material support film provided with a masking material pattern-wise.
摘要翻译：公开了一种光刻掩模结构，其包括掩模材料支撑膜和用于在外围支撑掩模材料支撑膜的环形支撑基板，所述掩模材料支撑膜含有荧光物质。还公开了一种光刻工艺，用于将感光材料暴露于通过图案化地设置有掩模材料的掩模材料支撑膜的辐射束照射。

8. 发明申请

US20070109514A1 EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD 有权
标题翻译：曝光装置和装置制造方法
公开(公告)号：US20070109514A1
公开(公告)日：2007-05-17
申请号：US11559084
申请日：2006-11-13
申请人： Masaru Nyui , Keiko Chiba , Keiji Yamashita
发明人： Masaru Nyui , Keiko Chiba , Keiji Yamashita
IPC分类号： G03B27/42
CPC分类号： G03F7/70916 , G03F7/70341
摘要： An exposure apparatus includes an illumination optical system for illuminating a reticle using a light from a light source, and a projection optical system for projecting a pattern of the reticle onto a substrate, the exposure apparatus exposing the substrate through a liquid that is supplied to a space between the substrate and a lens of the projection optical system closest to the substrate, a surface of the lens on which the light does not pass having a polished surface.
摘要翻译：曝光装置包括：照明光学系统，用于使用来自光源的光照射光罩;以及投影光学系统，用于将掩模版的图案投射到基板上，所述曝光装置通过供给到基板和最靠近基板的投影光学系统的透镜之间的空间，光线不通过的透镜的表面具有抛光表面。

9. 发明授权

US06728332B2 X-ray mask, and exposure method and apparatus using the same 失效
标题翻译： X射线掩模和使用其的曝光方法和装置
公开(公告)号：US06728332B2
公开(公告)日：2004-04-27
申请号：US09970826
申请日：2001-10-05
申请人： Keiko Chiba , Masami Tsukamoto , Yutaka Watanabe , Shinichi Hara , Hiroshi Maehara
发明人： Keiko Chiba , Masami Tsukamoto , Yutaka Watanabe , Shinichi Hara , Hiroshi Maehara
IPC分类号： G21K300
CPC分类号： G03F1/62 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： An exposure method for transferring a pattern of a mask onto a member to be exposed. The method includes the steps of making preparations for exposure while a protection cover is attached to the mask, executing alignment between the member to be exposed and the mask while the protection cover is detached from the mask, and executing exposure with X-rays while the protection cover is detached from the mask.
摘要翻译：一种用于将掩模图案转印到要曝光的构件上的曝光方法。该方法包括以下步骤：当保护盖附着到掩模上时，进行曝光准备，在保护盖与掩模分离的同时执行被曝光元件与掩模之间的对准，并且执行X射线曝光防护罩与面罩分离。

10. 发明授权

US06723475B2 Reflection-type mask for use in pattern exposure, manufacturing method therefor, exposure apparatus, and method of manufacturing a device 有权
标题翻译：用于图案曝光的反射型掩模，其制造方法，曝光装置和制造装置的方法
公开(公告)号：US06723475B2
公开(公告)日：2004-04-20
申请号：US09842056
申请日：2001-04-26
申请人： Masami Tsukamoto , Keiko Chiba
发明人： Masami Tsukamoto , Keiko Chiba
IPC分类号： G03F900
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , C23C8/04 , C23C14/3464 , C23C28/00 , G03F1/24 , G03F7/702 , G03F7/70233 , G03F7/70283 , G21K2201/067
摘要： A reflection-type mask for use in exposing a pattern onto a photosensitive material, wherein the mask includes a reflection area, having a multilayer film, for reflecting exposure light, and a non-reflection area which does not reflect the exposure light, the reflection area and the non-reflection area forming a mask pattern, wherein at least one layer of the multilayer film consists of an impurity semiconducter, whereby bad influences, for example, caused by poor conduction of the multilayer film at mask-production stage, can be prevented.
摘要翻译：一种用于将图案曝光到感光材料上的反射型掩模，其中所述掩模包括具有用于反射曝光光的多层膜的反射区域和不反映曝光光的非反射区域，所述反射区域和形成掩模图案的非反射区域，其中多层膜的至少一层由杂质半导体构成，由此，例如由掩模制造阶段的多层膜的导通性差导致的不良影响可以是防止了

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