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1. 发明授权

US5870448A X-ray mask and fabrication process using it 失效
标题翻译： X射线掩模和使用它的制作工艺
公开(公告)号：US5870448A
公开(公告)日：1999-02-09
申请号：US855473
申请日：1997-05-13
申请人： Hiroshi Maehara , Keiko Chiba
发明人： Hiroshi Maehara , Keiko Chiba
IPC分类号： G03F1/22 , G21K1/10 , H01L21/027 , G21K5/00
CPC分类号： G03F1/22 , G21K1/10
摘要： The present X-ray mask comprises an X-ray transmitting film, and a mask pattern formed on the X-ray transmitting film, wherein the mask pattern includes a mixture of a high-contrast pattern and a low-contrast pattern against X-rays and wherein the high-contrast pattern is comprised of stacked films the number of which is larger than that of the low-contrast pattern and which are made of different kinds of materials. A fabrication process of this X-ray mask comprises a step of forming a first metal film; a step of forming a second metal film of a different kind of material from the first metal film, thereon; and a step of successively performing a resist application process and an etching process to form a portion where the both first and second metal films are removed, a portion where only the first metal layer is left, and a portion where the both first and second metal layers are left, thereby forming a mask pattern.
摘要翻译：本X射线掩模包括X射线透射膜和形成在X射线透射膜上的掩模图案，其中掩模图案包括针对X射线的高对比度图案和低对比度图案的混合物并且其中所述高对比度图案包括数量大于所述低对比度图案并且由不同种类的材料制成的堆叠薄膜。该X射线掩模的制造工艺包括形成第一金属膜的步骤; 在其上形成与第一金属膜不同种类的材料的第二金属膜的步骤; 以及连续进行抗蚀剂涂布处理和蚀刻工序以形成去除了第一和第二金属膜两者的部分，仅剩下第一金属层的部分，以及第一和第二金属留下层，从而形成掩模图案。

2. 发明授权

US5733688A Lithographic mask structure and method of producing the same comprising W and molybdenum alloy absorber 失效
标题翻译：平版印刷掩模结构及其制造方法，包括W和钼合金吸收体
公开(公告)号：US5733688A
公开(公告)日：1998-03-31
申请号：US570686
申请日：1995-12-11
申请人： Hideo Kato , Masao Sugata , Keiko Chiba , Hiroshi Maehara
发明人： Hideo Kato , Masao Sugata , Keiko Chiba , Hiroshi Maehara
IPC分类号： G03F1/22 , G03F9/00
CPC分类号： G03F1/22
摘要： A mask suitably usable in X-ray lithography has a membrane and a radiation absorbing material pattern formed on the membrane, wherein the radiation absorbing material pattern contains an alloy including tungsten (W) and molybdenum (Mo), the proportion of the molybdenum content to the alloy being in a range of 0.1-50 wt %, the alloy having crystal precedence orientation of {110}. In one preferred form, the absorbing material pattern is provided on an amolphous metal layer formed on the mask membrane.
摘要翻译：适用于X射线光刻的掩模具有在膜上形成的膜和辐射吸收材料图案，其中辐射吸收材料图案包含包含钨（W）和钼（Mo）的合金，钼含量与该合金的范围为0.1-50wt％，晶体优先取向为{110}的合金。在一个优选形式中，吸收材料图案设置在形成在掩模膜上的淀粉金属层上。

3. 发明授权

US06728332B2 X-ray mask, and exposure method and apparatus using the same 失效
标题翻译： X射线掩模和使用其的曝光方法和装置
公开(公告)号：US06728332B2
公开(公告)日：2004-04-27
申请号：US09970826
申请日：2001-10-05
申请人： Keiko Chiba , Masami Tsukamoto , Yutaka Watanabe , Shinichi Hara , Hiroshi Maehara
发明人： Keiko Chiba , Masami Tsukamoto , Yutaka Watanabe , Shinichi Hara , Hiroshi Maehara
IPC分类号： G21K300
CPC分类号： G03F1/62 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： An exposure method for transferring a pattern of a mask onto a member to be exposed. The method includes the steps of making preparations for exposure while a protection cover is attached to the mask, executing alignment between the member to be exposed and the mask while the protection cover is detached from the mask, and executing exposure with X-rays while the protection cover is detached from the mask.
摘要翻译：一种用于将掩模图案转印到要曝光的构件上的曝光方法。该方法包括以下步骤：当保护盖附着到掩模上时，进行曝光准备，在保护盖与掩模分离的同时执行被曝光元件与掩模之间的对准，并且执行X射线曝光防护罩与面罩分离。

4. 发明授权

US6087076A Method of manufacturing semiconductor devices by performing coating, heating, exposing and developing in a low-oxygen or oxygen free controlled environment 失效
标题翻译：通过在低氧或无氧的受控环境中进行涂覆，加热，曝光和显影来制造半导体器件的方法
公开(公告)号：US6087076A
公开(公告)日：2000-07-11
申请号：US968589
申请日：1997-11-13
申请人： Keita Sakai , Keiko Chiba , Hiroshi Maehara
发明人： Keita Sakai , Keiko Chiba , Hiroshi Maehara
IPC分类号： G03F7/004 , G03F7/30 , G03F7/38 , H01L21/027 , G03C5/00
CPC分类号： G03F7/0048
摘要： A method of manufacturing semiconductor devices includes a coating step for coating a substrate using a resist solution including a base resin and a low-oxygen or oxygen-free solvent in which oxygen is removed by nitrogen bubbling, a heating step for heating the substrate coated with the resist, an exposing step for exposing the substrate with radiation to transfer a pattern, and a developing step for developing the exposed substrate. The coating step, the heating step, the exposing step and the developing step are performed under an environment controlled in a low-oxygen or oxygen-free state.
摘要翻译：一种制造半导体器件的方法包括：涂覆步骤，用于使用包含基础树脂的抗蚀剂溶液和通过氮气鼓泡除去氧的低氧或无氧溶剂的涂覆步骤，用于加热涂覆有抗蚀剂，用于用辐射曝光衬底以转印图案的曝光步骤，以及用于显影曝光的衬底的显影步骤。涂布步骤，加热步骤，曝光步骤和显影步骤在控制在低氧或无氧状态的环境下进行。

5. 发明授权

US06829091B2 Optical system and optical instrument with diffractive optical element 失效
$Optical system and optical instrument with diffractive optical element$
标题翻译：具有衍射光学元件的光学系统和光学仪器
公开(公告)号：US06829091B2
公开(公告)日：2004-12-07
申请号：US09362698
申请日：1999-07-29
申请人： Takashi Kato , Kenji Saitoh , Hiroshi Maehara , Makoto Ogusu , Keiko Chiba
发明人： Takashi Kato , Kenji Saitoh , Hiroshi Maehara , Makoto Ogusu , Keiko Chiba
IPC分类号： G02B518
CPC分类号： G02B5/1814 , G02B5/1838 , G02B5/1857 , G02B5/1895 , G02B7/00 , G02B27/4222 , G03F7/70316 , G03F7/70825
摘要： An optical system for forming an image of an object. The optical system includes an optical element, which is deformed by the weight thereof, and at least one optical member for preventing a change in optical performance of the optical system due to deformation of the optical element, when the optical element is provided in the optical system.
摘要翻译：一种用于形成物体的图像的光学系统。该光学系统包括光学元件，该光学元件由于其重量而变形，并且至少一个光学构件用于防止当光学元件设置在光学元件中时由于光学元件的变形而导致的光学系统的光学性能的变化系统。

6. 发明授权

US06337161B2 Mask structure exposure method 有权
标题翻译：面膜结构曝光方法
公开(公告)号：US06337161B2
公开(公告)日：2002-01-08
申请号：US09161372
申请日：1998-09-28
申请人： Keiko Chiba , Hideo Kato , Hiroshi Maehara
发明人： Keiko Chiba , Hideo Kato , Hiroshi Maehara
IPC分类号： G03F900
CPC分类号： G03F1/22 , G03F1/62
摘要： A mask structure to be used for X-ray exposure or the like in manufacturing semiconductor devices prevents contaminants from adhering and accumulating on the surface of a mask, thereby extending the life of the mask. In this mask structure, titanium oxide films are formed on front and back pellicles that protect a mask, composed of a support film and an X-ray absorber, from dust or the like. Titanium oxide decomposes contaminants by functioning as a photocatalyst, and prevents the adhesion and accumulation of contaminants by an antistatic function based on photoconductivity. When a titanium oxide film is formed on the surface of the mask itself, it is preferable that the film be formed outside the exposure area or the like.
摘要翻译：在制造半导体器件中用于X射线曝光等的掩模结构防止污染物粘附并积聚在掩模的表面上，从而延长掩模的使用寿命。在该掩模结构中，在保护由支撑膜和X射线吸收体构成的掩模的灰尘等上的前面和后面防护薄膜上形成氧化钛膜。氧化钛通过作为光催化剂起作用来分解污染物，并且通过基于光电导性的抗静电功能来防止污染物的粘附和积累。当在掩模本身的表面上形成氧化钛膜时，优选将膜形成在曝光区域等之外。

7. 发明授权

US6101237A X-ray mask and X-ray exposure method using the same 失效
标题翻译： X射线掩模和使用其的X射线曝光方法
公开(公告)号：US6101237A
公开(公告)日：2000-08-08
申请号：US917854
申请日：1997-08-27
申请人： Takeshi Miyachi , Keiko Chiba , Hiroshi Osawa , Koichi Sentoku , Hiroshi Maehara
发明人： Takeshi Miyachi , Keiko Chiba , Hiroshi Osawa , Koichi Sentoku , Hiroshi Maehara
IPC分类号： G03F1/22 , G03F1/62 , G03F7/20 , G21K1/10 , G21K5/00
CPC分类号： G03F1/22 , G03F1/62 , G03F7/70691 , G21K1/10
摘要： An X-ray mask includes a holding frame, a membrane held by the holding frame, a pattern formed on a surface of the membrane by an X-ray absorptive material, the surface being disposed opposed to a workpiece to which the pattern is to be transferred when the mask is mounted in an exposure apparatus, a member for reinforcing the holding frame and having a portion placed closer to the workpiece than to the membrane and a pellicle provided at a side where the pattern is formed, the pellicle being attached to the portion of the member so that the pellicle is placed at the workpiece side of the membrane.
摘要翻译： X射线掩模包括保持框架，由保持框架保持的膜，通过X射线吸收材料形成在膜的表面上的图案，该表面设置成与图案所在的工件相对当掩模安装在曝光装置中时转印，用于加强保持框架并且具有比膜更靠近工件的部分的膜和设置在图案形成侧的防护薄膜组件，防护薄膜组件附接到部件，使防护薄膜组件放置在膜的工件侧。

8. 发明授权

US5553110A X-ray mask structure, process for production thereof, apparatus and method for X-ray exposure with the X-ray mask structure, and semiconductor device produced by the X-ray exposure method 失效
标题翻译： X射线掩模结构，其制造方法，用X射线掩模结构X射线曝光的装置和方法以及通过X射线曝光方法制造的半导体器件
公开(公告)号：US5553110A
公开(公告)日：1996-09-03
申请号：US345395
申请日：1994-11-18
申请人： Koichi Sentoku , Kenji Saito , Keiko Chiba , Hiroshi Maehara
发明人： Koichi Sentoku , Kenji Saito , Keiko Chiba , Hiroshi Maehara
IPC分类号： G03F7/20 , C30B33/00 , G03F1/22 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L39/00
CPC分类号： G03F1/22 , Y10S430/167 , Y10S430/168
摘要： An X-ray mask structure for X-ray lithography comprises a pattern, an X-ray transmissive film for holding the pattern, and a frame for supporting the X-ray transmissive film, wherein a light-scattering prevention film is formed on at least a part of the surface of the X-ray transmissive film and/or of the pattern, and the light scattering prevention film may be a flat coating film formed on at least one of the top face and the back face of the X-ray transmissive film and having a refractive index substantially equal to the refractive index of the X-ray transmissive film. A process for producing the X-ray mask structure comprises steps of forming a flat coating film having a refractive index substantially the same as that of the X-ray transmissive film on at least one of the top face and the back face of the X-ray transmissive film, and forming a pattern at least on the top face of the X-ray transmissive film. An X-ray exposure apparatus comprises an X-ray source, and the X-ray mask structure, and conducts transcription of the pattern formed on the x-ray mask structure onto a transcription-receiving member by projecting X-rays through the X-ray mask structure to the transcription receiving member.
摘要翻译：用于X射线光刻的X射线掩模结构包括图案，用于保持图案的X射线透射膜和用于支撑X射线透射膜的框架，其中至少形成光散射防止膜 X射线透过膜表面的一部分和/或图案的一部分，光散射防止膜可以是形成在X射线透射性的上表面和背面的至少一面上的平坦的涂膜并且具有基本上等于X射线透射膜的折射率的折射率。一种X射线掩模结构体的制造方法，其特征在于，在上述X射线掩模结构的上表面和背面的至少一面上，形成与X射线透过膜的折射率基本相同的折射率的平面涂膜，并且至少在X射线透射膜的顶面上形成图案。 X射线曝光装置包括X射线源和X射线掩模结构，并且通过X射线X射线透过X射线掩模结构将X射线掩模结构上形成的图案转印到转录接收部件上，射线掩模结构。

9. 发明授权

US07072438B2 Reflection type mask 失效
标题翻译：反射型面具
公开(公告)号：US07072438B2
公开(公告)日：2006-07-04
申请号：US10736693
申请日：2003-12-17
申请人： Keiko Chiba , Masami Tsukamoto , Yutaka Watanabe , Shinichi Hara , Hiroshi Maehara
发明人： Keiko Chiba , Masami Tsukamoto , Yutaka Watanabe , Shinichi Hara , Hiroshi Maehara
IPC分类号： G21K3/00
CPC分类号： G03F1/62 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A reflection type mask includes a substrate on which a multi-layered film for reflecting X-rays is provided, a mask pattern which is formed on the multi-layered film for absorbing the X-rays, and a cover for protecting the mask pattern. The cover is detachably attached to the substrate.
摘要翻译：反射型掩模包括其上设置有用于反射X射线的多层膜的基板，形成在用于吸收X射线的多层膜上的掩模图案，以及用于保护掩模图案的盖。盖可拆卸地附接到基板。

10. 发明授权

US06317479B1 X-ray mask, and exposure method and apparatus using the same 失效
标题翻译： X射线掩模和使用其的曝光方法和装置
公开(公告)号：US06317479B1
公开(公告)日：2001-11-13
申请号：US08857466
申请日：1997-05-16
申请人： Keiko Chiba , Masami Tsukamoto , Yutaka Watanabe , Shinichi Hara , Hiroshi Maehara
发明人： Keiko Chiba , Masami Tsukamoto , Yutaka Watanabe , Shinichi Hara , Hiroshi Maehara
IPC分类号： H01L2700
CPC分类号： G03F1/62 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： An X-ray mask includes a mask pattern formed on a surface, a detachable protection cover attached on the surface for forming a dust-proof space for protecting the mask pattern, the protection cover being detached when the mask pattern is exposed with X-rays, and a hole for ventilating between the dust-proof space and an outer atmosphere.
摘要翻译： X射线掩模包括形成在表面上的掩模图案，安装在表面上用于形成用于保护掩模图案的防尘空间的可拆卸保护盖，当掩模图案用X射线暴露时，保护盖被分离，以及用于在防尘空间和外部空气之间通风的孔。

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