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1. 发明申请

US20130137038A1 PHOTORESIST COMPOSITION 有权
标题翻译：光电组合物
公开(公告)号：US20130137038A1
公开(公告)日：2013-05-30
申请号：US13482595
申请日：2012-05-29
申请人： Mingqi Li , Amad Aqad , Cong Liu , Ching-Lung Chen , Shintaro Yamada , Cheng-bai Xu , Joseph Mattia
发明人： Mingqi Li , Amad Aqad , Cong Liu , Ching-Lung Chen , Shintaro Yamada , Cheng-bai Xu , Joseph Mattia
IPC分类号： G03F7/004
CPC分类号： G03F7/004 , G03F7/0045 , G03F7/0397
摘要： A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula: (Ra)1—(Ar)—S+(—CH2—)m·−O3S—(CRb2)n-(L)p-X wherein each Ra is independently a substituted or unsubstituted C1-30 alkyl group, C6-30 aryl group, C7-30 aralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic C6-30 aryl group, each Rb is independently H, F, a linear or branched C1-10 fluoroalkyl or a linear or branched heteroatom-containing C1-10 fluoroalkyl, L is a C1-30 linking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p is an integer of 0 to 2.
摘要翻译：光致抗蚀剂组合物包含酸敏感性聚合物和具有下式的环状锍化合物：（Ra）1-（Ar）-S +（ - CH2-）m·-O3S-（CRb2）n-（L） R a独立地是取代或未取代的C 1-30烷基，C 6-30芳基，C 3-30芳烷基或包含至少一个前述的组合，Ar是单环，多环或稠合多环C 6-30芳基，每个R b独立地是H，F，直链或支链C 1-10氟代烷基或含有直链或支链含杂原子的C 1-10氟代烷基，L是任选地包含O，S，N，F 或包含至少一个前述杂原子的组合，X是取代或未取代的C5或更大单环，多环或稠合的多环脂环族基团，任选地包含包含O，S，N，F的杂原子，或包含在上述中的至少一个，1为0〜4的整数，m为3〜20的整数，n为In 0〜4的整数，p为0〜2的整数。

2. 发明授权

US09507259B2 Photoresist composition 有权
标题翻译：光刻胶组成
公开(公告)号：US09507259B2
公开(公告)日：2016-11-29
申请号：US13482595
申请日：2012-05-29
申请人： Mingqi Li , Emad Aqad , Cong Liu , Ching-Lung Chen , Shintaro Yamada , Cheng-bai Xu , Joseph Mattia
发明人： Mingqi Li , Emad Aqad , Cong Liu , Ching-Lung Chen , Shintaro Yamada , Cheng-bai Xu , Joseph Mattia
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/004 , G03F7/0045 , G03F7/0397
摘要： A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula: (Ra)1—(Ar)—S+(—CH2—)m·−O3S—(CRb2)n-(L)p-X wherein each Ra is independently a substituted or unsubstituted C1-30 alkyl group, C6-30 aryl group, C7-30 aralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic C6-30 aryl group, each Rb is independently H, F, a linear or branched C1-10 fluoroalkyl or a linear or branched heteroatom-containing C1-10 fluoroalkyl, L is a C1-30 linking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p is an integer of 0 to 2.

3. 发明授权

US09436082B2 Compositions comprising base-reactive component and processes for photolithography 有权
标题翻译：包含碱反应性组分的组合物和用于光刻的方法
公开(公告)号：US09436082B2
公开(公告)日：2016-09-06
申请号：US13341067
申请日：2011-12-30
申请人： Deyan Wang , Shintaro Yamada , Cong Liu , Mingqi Li , Joon-Seok Oh , Chunyi Wu , Doris Kang , Cheng-Bai Xu
发明人： Deyan Wang , Shintaro Yamada , Cong Liu , Mingqi Li , Joon-Seok Oh , Chunyi Wu , Doris Kang , Cheng-Bai Xu
IPC分类号： G03F7/004 , G03F7/30 , G03F7/039 , G03F7/11
CPC分类号： G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/30
摘要： New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist.
摘要翻译：提供新的光致抗蚀剂组合物，其包含一种或多种具有碱反应性基团并且特别用于干式光刻的材料。本发明的特别优选的光致抗蚀剂可以在抗蚀剂的涂层开发之后表现出减少的缺陷。

4. 发明授权

US09255079B2 Photoacid generators and photoresists comprising same 有权
标题翻译：含有它的光酸产生剂和光致抗蚀剂
公开(公告)号：US09255079B2
公开(公告)日：2016-02-09
申请号：US12965368
申请日：2010-12-10
申请人： Mingqi Li , Emad Aqad , Cong Liu , Joseph Mattia , Cheng-Bai Xu , George G. Barclay
发明人： Mingqi Li , Emad Aqad , Cong Liu , Joseph Mattia , Cheng-Bai Xu , George G. Barclay
IPC分类号： C07D333/46 , C07D335/02 , C07D337/04 , C07C303/32 , C07C309/06 , C07C309/12 , G03F7/004 , C07C381/12 , C07D493/20 , C07J31/00 , G03F7/039 , G03F7/038
CPC分类号： G03F7/0045 , C07C303/32 , C07C309/06 , C07C309/12 , C07C321/30 , C07C381/12 , C07C2603/74 , C07D333/46 , C07D335/02 , C07D337/04 , C07D493/20 , C07J31/006 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397
摘要： New methods are provided for synthesis of photoacid generator compounds (“PAGs”), new photoacid generator compounds and photoresist compositions that comprise such PAG compounds. In a particular aspect, sulfonium-containing (S+) photoacid generators and methods of synthesis of sulfonium photoacid generators are provided.
摘要翻译：提供了新的方法用于合成光酸产生剂化合物（“PAG”），新的光酸产生剂化合物和包含这种PAG化合物的光致抗蚀剂组合物。在特定方面，提供含锍（S +）光酸产生剂和合成锍光酸发生剂的方法。

5. 发明授权

US09156785B2 Base reactive photoacid generators and photoresists comprising same 有权
标题翻译：碱反应性光酸产生剂和包含它的光致抗蚀剂
公开(公告)号：US09156785B2
公开(公告)日：2015-10-13
申请号：US13296949
申请日：2011-11-15
申请人： Emad Aqad , Mingqi Li , Cheng-Bai Xu , Deyan Wang , Cong Liu , Joon Seok Oh , Shintaro Yamada
发明人： Emad Aqad , Mingqi Li , Cheng-Bai Xu , Deyan Wang , Cong Liu , Joon Seok Oh , Shintaro Yamada
IPC分类号： G03F7/004 , G03F7/30 , C07C303/32 , C07C309/19 , C07C309/24 , C08F220/22 , C08F228/02 , C07C309/04 , C07C309/08 , C07C309/06 , C07C309/12 , C07C309/20 , C07C309/23 , C07C381/12 , G03F7/38 , C07C63/72 , C07C309/17 , G03F7/038 , G03F7/039 , G03F7/20
CPC分类号： C07C381/12 , C07C63/72 , C07C303/32 , C07C309/04 , C07C309/06 , C07C309/08 , C07C309/12 , C07C309/17 , C07C309/19 , C07C309/20 , C07C309/23 , C07C309/24 , C07C2602/42 , C08F220/22 , C08F228/02 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/2041 , G03F7/38
摘要： This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that comprise base-cleavable groups.
摘要翻译：本发明涉及包含这些化合物的新的光酸产生剂化合物和光致抗蚀剂组合物。特别地，本发明涉及包含可碱基裂解基团的光酸产生剂化合物。

6. 发明申请

US20140120471A1 PHOTOACID GENERATING COMPOUND AND PHOTORESIST COMPOSITION COMPRISING SAME, COATED ARTICLE COMPRISING THE PHOTORESIST AND METHOD OF MAKING AN ARTICLE 有权
标题翻译：包含光致发光组合物的光致发光组合物和包含它们的光电组合物，包含光电子的涂层物和制造方法
公开(公告)号：US20140120471A1
公开(公告)日：2014-05-01
申请号：US13661553
申请日：2012-10-26
申请人： Emad Aqad , Cheng-Bai Xu , Cong Liu , Mingqi Li , Shintaro Yamada
发明人： Emad Aqad , Cheng-Bai Xu , Cong Liu , Mingqi Li , Shintaro Yamada
IPC分类号： C07C321/10 , G03F7/20 , G03F7/027
CPC分类号： C07C381/12 , C07C303/32 , C07C309/04 , C07C309/06 , C07C309/12 , C07C309/17 , C07C2603/74 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/322 , G03F7/325
摘要： A compound having the formula (I): wherein a is an integer of from 1 to 10, and x is an integer of from 1 to 3, X1 comprises a fluoroalcohol, fluorinated ester, or fluorinated anhydride, Y is a single bond, C1-20 alkylene group, O, S, NR, ester, carbonate, sulfonate, sulfone, or sulfonamide, wherein R is H or C1-20 alkyl, and wherein the C1-20 alkylene group is structurally only carbon, or one or more structural carbon atoms in the C1-20 alkylene group is replaced by oxygen, carbonyl, ester, or a combination comprising at least one of the foregoing, Ar is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic, or fused polycyclic cycloalkyl; or a substituted or unsubstituted, C5 or greater monocyclic, polycyclic, or fused polycyclic aryl group, wherein the cycloalkyl or aryl is a carbocycle or comprises a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, each R1 is independently a substituted C5-40 aryl, substituted C5-40 heteroaryl, C1-40 alkyl, a C3-40 cycloalkyl, wherein when x is 1, the two groups R1 are separate or bonded to each other to form a C4-40 ring structure, and Z− is a carboxylate, sulfate, sulfonate, sulfamate, or the anion of a sulfonimide, wherein when Y is a single bond, Z− is not sulfonate.
摘要翻译：具有式（I）的化合物：其中a是1至10的整数，x是1至3的整数，X 1包括氟代醇，氟化酯或氟化酐，Y是单键，C1 -20亚烷基，O，S，NR，酯，碳酸酯，磺酸酯，砜或磺酰胺，其中R是H或C 1-20烷基，其中C 1-20亚烷基在结构上仅为碳，或一个或多个结构 C 1-20亚烷基中的碳原子被氧，羰基，酯或包含至少一个前述的组合代替，Ar是取代或未取代的C5或更大单环，多环或稠合的多环环烷基; 或取代或未取代的C5或更大单环，多环或稠合多环芳基，其中环烷基或芳基是碳环或包含含O，S，N，F的杂原子，或包含至少一个上述，每个R 1独立地为取代的C 5-40芳基，取代的C 5-40杂芳基，C 1-40烷基，C 3-40环烷基，其中当x为1时，两个基团R1彼此分离或键合形成C4 -40环结构，Z-是羧酸盐，硫酸盐，磺酸盐，氨基磺酸盐或磺酰亚胺的阴离子，其中当Y是单键时，Z-不是磺酸盐。

7. 发明申请

US20120171626A1 COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY 有权
标题翻译：包含基础反应成分的组合物和光刻胶的方法
公开(公告)号：US20120171626A1
公开(公告)日：2012-07-05
申请号：US13341067
申请日：2011-12-30
申请人： Deyan WANG , Shintaro Yamada , Cong Liu , Mingqi Li , Joon-Seok Oh , Chunyi Wu , Doris Kang , Cheng-Bai Xu
发明人： Deyan WANG , Shintaro Yamada , Cong Liu , Mingqi Li , Joon-Seok Oh , Chunyi Wu , Doris Kang , Cheng-Bai Xu
IPC分类号： G03F7/20
CPC分类号： G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/30
摘要： New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist.
摘要翻译：提供新的光致抗蚀剂组合物，其包含一种或多种具有碱反应性基团并且特别用于干式光刻的材料。本发明的特别优选的光致抗蚀剂可以在抗蚀剂的涂层开发之后表现出减少的缺陷。

8. 发明授权

US10670965B2 Polymers and photoresist compositions 审中-公开
公开(公告)号：US10670965B2
公开(公告)日：2020-06-02
申请号：US13077947
申请日：2011-03-31
申请人： Emad Aqad , Cong Liu , Cheng-Bai Xu , Mingqi Li
发明人： Emad Aqad , Cong Liu , Cheng-Bai Xu , Mingqi Li
IPC分类号： G03F7/039 , G03F7/20 , G03F7/004
摘要： New polymers are provided comprising (i) one or more covalently linked photoacid generator moieties and (ii) one or more photoacid-labile groups, wherein the one or more photoacid generator moieties are a component of one or more of the photoacid-labile groups. Preferred polymers of the invention are suitable for use in photoresists imaged at short wavelengths such as sub-200 nm, particularly 193 nm.

9. 发明授权

US08338077B2 Photoacid generators and photoresists comprising same 有权
标题翻译：含有它的光酸产生剂和光致抗蚀剂
公开(公告)号：US08338077B2
公开(公告)日：2012-12-25
申请号：US12820331
申请日：2010-06-22
申请人： Mingqi Li , Cheng-Bai Xu , Emad Aqad , Cong Liu
发明人： Mingqi Li , Cheng-Bai Xu , Emad Aqad , Cong Liu
IPC分类号： G03F7/028 , G03F7/029 , G03F7/039 , G03F7/26
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397
摘要： This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that comprise a multi cyclic lactone moiety.
摘要翻译：本发明涉及包含这些化合物的新的光酸产生剂化合物和光致抗蚀剂组合物。特别地，本发明涉及包含多环内酯部分的光酸产生剂化合物。

10. 发明授权

US09720321B2 Lactone photoacid generators and resins and photoresists comprising same 有权
公开(公告)号：US09720321B2
公开(公告)日：2017-08-01
申请号：US13297031
申请日：2011-11-15
申请人： Emad Aqad , Mingqi Li , Cheng-Bai Xu , Cong Liu
发明人： Emad Aqad , Mingqi Li , Cheng-Bai Xu , Cong Liu
IPC分类号： G03F7/004 , C07D493/08 , G03F7/039
CPC分类号： G03F7/0045 , C07D493/08 , G03F7/0046 , G03F7/0397
摘要： New lactone-containing photoacid generator compounds (“PAGs”) and photoresist compositions that comprise each PAG compounds are provided. These photoresist compositions are useful in the manufacture of electronic device.

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