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1. 发明授权

US07671359B2 Thin film transistor, a method for preparing the same and a flat panel display employing the same 有权
标题翻译：薄膜晶体管，其制备方法和采用该薄膜晶体管的平板显示器
公开(公告)号：US07671359B2
公开(公告)日：2010-03-02
申请号：US11329865
申请日：2006-01-09
申请人： Min-Chul Suh , Myeong-Seob So , Jae-Bon Koo , Nam-Choul Yang
发明人： Min-Chul Suh , Myeong-Seob So , Jae-Bon Koo , Nam-Choul Yang
IPC分类号： H01L51/00 , H01L51/40
CPC分类号： H01L51/0545 , H01L51/0051 , H01L51/0052 , H01L51/0053 , H01L51/0062 , H01L51/0078 , H01L51/0541 , H01L51/0583
摘要： Provided are a thin film transistor, a method for preparing the same and a flat panel display employing the same. The thin film transistor includes a gate electrode, source and drain electrodes insulated from the gate electrode, a semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes, an insulating layer, and a carrier blocking layer interposed between the semiconductor layer and the insulating layer and preventing electrons or holes moving through semiconductor layer from being trapped in the insulating layer. Since the thin film transistor is constructed such that the carrier blocking layer is interposed between the semiconductor layer and the insulating layer, the electrons or holes injected into the semiconductor layer can be prevented from being trapped in the insulating layer, thereby suppressing hysteresis characteristic. In addition, a reliable flat panel display device can be manufactured using the thin film transistor.
摘要翻译：提供薄膜晶体管，其制备方法和采用该薄膜晶体管的平板显示器。薄膜晶体管包括栅电极，与栅电极绝缘的源电极和漏电极，与栅电极绝缘并电连接到源极和漏极的半导体层，绝缘层和插入在半导体之间的载流子阻挡层层和绝缘层，并且防止移动通过半导体层的电子或空穴被捕获在绝缘层中。由于薄膜晶体管被构造为使得载流子阻挡层插入在半导体层和绝缘层之间，因此可以防止注入到半导体层中的电子或空穴被捕获在绝缘层中，从而抑制滞后特性。此外，可以使用薄膜晶体管制造可靠的平板显示装置。

2. 发明申请

US20060160280A1 Thin film transistor, a method for preparing the same and a flat panel display employing the same 有权
标题翻译：薄膜晶体管，其制备方法和采用该薄膜晶体管的平板显示器
公开(公告)号：US20060160280A1
公开(公告)日：2006-07-20
申请号：US11329865
申请日：2006-01-09
申请人： Min--Chul Suh , Myeong-Seob So , Jae-Bon Koo , Nam-Choul Yang
发明人： Min--Chul Suh , Myeong-Seob So , Jae-Bon Koo , Nam-Choul Yang
IPC分类号： H01L21/00 , H01L21/84 , H01L31/113
CPC分类号： H01L51/0545 , H01L51/0051 , H01L51/0052 , H01L51/0053 , H01L51/0062 , H01L51/0078 , H01L51/0541 , H01L51/0583
摘要： Provided are a thin film transistor, a method for preparing the same and a flat panel display employing the same. The thin film transistor includes a gate electrode, source and drain electrodes insulated from the gate electrode, a semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes, an insulating layer, and a carrier blocking layer interposed between the semiconductor layer and the insulating layer and preventing electrons or holes moving through semiconductor layer from being trapped in the insulating layer. Since the thin film transistor is constructed such that the carrier blocking layer is interposed between the semiconductor layer and the insulating layer, the electrons or holes injected into the semiconductor layer can be prevented from being trapped in the insulating layer, thereby suppressing hysteresis characteristic. In addition, a reliable flat panel display device can be manufactured using the thin film transistor.
摘要翻译：提供薄膜晶体管，其制备方法和采用该薄膜晶体管的平板显示器。薄膜晶体管包括栅电极，与栅电极绝缘的源电极和漏电极，与栅电极绝缘并电连接到源极和漏极的半导体层，绝缘层和插入在半导体之间的载流子阻挡层层和绝缘层，并且防止移动通过半导体层的电子或空穴被捕获在绝缘层中。由于薄膜晶体管被构造为使得载流子阻挡层插入在半导体层和绝缘层之间，因此可以防止注入到半导体层中的电子或空穴被捕获在绝缘层中，从而抑制滞后特性。此外，可以使用薄膜晶体管制造可靠的平板显示装置。

3. 发明申请

US20050269562A1 Thin film transistor (TFT) and flat display panel having the thin film transistor (TFT) 审中-公开
标题翻译：薄膜晶体管（TFT）和具有薄膜晶体管（TFT）的平板显示面板
公开(公告)号：US20050269562A1
公开(公告)日：2005-12-08
申请号：US11126300
申请日：2005-05-11
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
IPC分类号： H01L51/50 , G02F1/136 , H01L21/336 , H01L21/84 , H01L27/12 , H01L27/32 , H01L29/786 , H01L51/00 , H01L51/05 , H05B33/14
CPC分类号： H01L51/0545 , H01L27/3244 , H01L51/0036 , H01L51/0055 , H01L51/0541
摘要： A Thin Film Transistor (TFT) includes: a gate electrode; a source electrode and a drain electrode each insulated from the gate electrode; and an organic semiconductor layer adapted to contact each of the source and drain electrodes, the organic semiconductor layer being insulated from the gate electrode; wherein the organic semiconductor layer includes a boundary region having a smaller grain size than other portions of the organic semiconductor layer, the boundary region being arranged around at least a channel region and a source and drain region of the organic semiconductor layer.
摘要翻译：薄膜晶体管（TFT）包括：栅电极; 源极电极和漏极电极，各自与栅电极绝缘; 以及适于接触所述源电极和漏电极中的每一个的有机半导体层，所述有机半导体层与所述栅电极绝缘; 其中所述有机半导体层包括具有比所述有机半导体层的其它部分更小的晶粒尺寸的边界区域，所述边界区域布置在所述有机半导体层的至少沟道区域和源极和漏极区域周围。

4. 发明授权

US08043887B2 Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display 有权
标题翻译：薄膜晶体管，包括薄膜晶体管的平板显示器以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US08043887B2
公开(公告)日：2011-10-25
申请号：US12641277
申请日：2009-12-17
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L51/40
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

5. 发明授权

US07442960B2 TFT, method of manufacturing the TFT, flat panel display having the TFT, and method of manufacturing the flat panel display 有权
标题翻译： TFT，制造TFT的方法，具有TFT的平板显示器以及制造平板显示器的方法
公开(公告)号：US07442960B2
公开(公告)日：2008-10-28
申请号：US11131233
申请日：2005-05-18
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Tae-Min Kang , Hye-dong Kim
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Tae-Min Kang , Hye-dong Kim
IPC分类号： H01L21/84
CPC分类号： H01L29/66742 , H01L21/76264 , H01L27/1222 , H01L27/1248 , H01L29/78606 , H01L29/78681
摘要： A thin film transistor (TFT) including a semiconductor film that may be simply patterned, a method of manufacturing the TFT, a flat panel display (FPD) including the TFT, and a method of manufacturing the FPD. The TFT includes a gate electrode, source and drain electrodes electrically insulated from the gate electrode, and a semiconductor film electrically insulated from the gate electrode and including source and drain regions coupled to the source and drain electrodes, respectively, and a channel region coupling the source and drain regions. The semiconductor film has a groove that isolates the channel region from an adjacent TFT.
摘要翻译：一种薄膜晶体管（TFT），其包括可以被简单地构图的半导体膜，TFT的制造方法，包括TFT的平板显示器（FPD）以及FPD的制造方法。 TFT包括栅电极，与栅电极电绝缘的源电极和漏电极以及与栅电极电绝缘并且分别耦合到源电极和漏电极的源极和漏极区域的半导体膜以及耦合到栅极电极的沟道区域源极和漏极区域。半导体膜具有将沟道区域与相邻TFT隔离的沟槽。

6. 发明申请

US20060138405A1 Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display 审中-公开
标题翻译：薄膜晶体管，包括薄膜晶体管的平板显示器以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US20060138405A1
公开(公告)日：2006-06-29
申请号：US11298211
申请日：2005-12-09
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L29/08
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

7. 发明申请

US20050258487A1 TFT, method of manufacturing the TFT, flat panel display having the TFT, and method of manufacturing the flat panel display 有权
标题翻译： TFT，制造TFT的方法，具有TFT的平板显示器以及制造平板显示器的方法
公开(公告)号：US20050258487A1
公开(公告)日：2005-11-24
申请号：US11131233
申请日：2005-05-18
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Tae-Min Kang , Hye-dong Kim
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Tae-Min Kang , Hye-dong Kim
IPC分类号： H01L51/05 , H01L21/304 , H01L21/336 , H01L21/762 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L51/40
CPC分类号： H01L29/66742 , H01L21/76264 , H01L27/1222 , H01L27/1248 , H01L29/78606 , H01L29/78681
摘要： A thin film transistor (TFT) including a semiconductor film that may be simply patterned, a method of manufacturing the TFT, a flat panel display (FPD) including the TFT, and a method of manufacturing the FPD. The TFT includes a gate electrode, source and drain electrodes electrically insulated from the gate electrode, and a semiconductor film electrically insulated from the gate electrode and including source and drain regions coupled to the source and drain electrodes, respectively, and a channel region coupling the source and drain regions. The semiconductor film has a groove that isolates the channel region from an adjacent TFT.
摘要翻译：一种薄膜晶体管（TFT），其包括可以被简单地构图的半导体膜，TFT的制造方法，包括TFT的平板显示器（FPD）以及FPD的制造方法。 TFT包括栅电极，与栅电极电绝缘的源电极和漏电极以及与栅电极电绝缘并且分别耦合到源电极和漏电极的源极和漏极区域的半导体膜以及耦合到栅极电极的沟道区域源极和漏极区域。半导体膜具有将沟道区域与相邻TFT隔离的沟槽。

8. 发明申请

US20050191448A1 Donor sheet, method of manufacturing the same, method of manufacturing TFT using the donor sheet, and method of manufacturing flat panel display device using the donor sheet 有权
标题翻译：供体片，其制造方法，使用供体片的TFT的制造方法以及使用供体片的平板显示装置的制造方法
公开(公告)号：US20050191448A1
公开(公告)日：2005-09-01
申请号：US10995514
申请日：2004-11-24
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
IPC分类号： B82B1/00 , B41M5/30 , B41M5/382 , B41M5/395 , B82B3/00 , D03D1/00 , D06M11/00 , D06M13/00 , G02F1/136 , G09F9/00 , G09F9/30 , H01L21/00 , H01L21/02 , H01L21/205 , H01L21/336 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L27/32 , H01L29/04 , H01L29/786 , H01L51/00 , H01L51/50 , H05B33/10 , H05B33/14
CPC分类号： B41M5/38207 , B41M5/395 , B82Y20/00 , B82Y30/00 , H01L27/3244 , H01L29/04 , H01L29/78681 , H01L29/7869 , H01L51/0013 , H01L51/0097 , H01L2251/5338 , H01L2251/5369 , Y10S977/773 , Y10T428/31504
摘要： A flexible flat panel display where nanoparticles are used for an active layer and the substrate is a flexible plastic, a method of manufacturing the same, a method of manufacturing a thin film transistor (TFT) using the donor sheet, and a method of manufacturing a flat panel display device using the donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The donor sheet can be manufactured at room temperature. The donor sheet has a base film, and a transfer layer being disposed at one side of the base film and transferable, wherein the transfer layer has a plurality of nanoparticles which are arranged to be approximately parallel to one another.
摘要翻译：一种柔性平板显示器，其中纳米颗粒用于有源层，并且衬底是柔性塑料，其制造方法，使用该供体薄片制造薄膜晶体管（TFT）的方法，以及制造方法使用供体片的平板显示装置。在制造显示器中的TFT时，使用供体片将纳米颗粒从片材转移到衬底。供体片可以在室温下制造。供体片具有基膜，并且转移层设置在基膜的一侧并可转印，其中转印层具有被布置为彼此大致平行的多个纳米颗粒。

9. 发明申请

US20050189883A1 TFT, flat panel display device having the same, method of manufacturing TFT, method of manufacturing flat panel display device, and method of manufacturing donor sheet 失效
标题翻译： TFT，具有该TFT的平板显示装置，TFT的制造方法，平板显示装置的制造方法以及制造供体片的方法
公开(公告)号：US20050189883A1
公开(公告)日：2005-09-01
申请号：US10995537
申请日：2004-11-24
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
IPC分类号： H05B33/00 , B82B1/00 , G02F1/136 , G09F9/30 , G09G3/10 , G09G3/36 , H01L21/336 , H01L27/32 , H01L29/04 , H01L29/06 , H01L29/786 , H01L51/00 , H01L51/50 , H05B33/10 , H05B33/12 , H05B33/14
CPC分类号： H01L29/04 , B82Y20/00 , B82Y30/00 , H01L27/3244 , H01L29/66969 , H01L29/786 , H01L29/78681 , H01L29/78684 , H01L29/7869 , H01L51/0013 , H01L51/0097 , H01L2251/5338 , H01L2251/5369
摘要： A flexible flat panel display where nanoparticles are used for the active layer of the TFTs and the substrate is flexible and can be manufactured at room temperature, a flat panel display device having the same, a method of manufacturing a TFT, a method of manufacturing a flat panel display device, and a method of manufacturing a donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The thin film transistor is placed on a substrate and includes a channel region which has at least one P-type or N-type nanoparticle arranged in a lengthwise direction, wherein the lengthwise direction of the P-type or N-type nanoparticles is parallel to a P-type or an N-type nanoparticle line partitioned off on the substrate.
摘要翻译：用于TFT和基板的有源层的纳米颗粒的柔性平板显示器是柔性的，并且可以在室温下制造，具有该平板显示装置的平板显示装置，TFT的制造方法，制造方法平板显示装置，以及制造供体薄片的方法。在制造显示器中的TFT时，使用供体片将纳米颗粒从片材转移到衬底。薄膜晶体管被放置在基板上，并且包括具有沿长度方向布置的至少一个P型或N型纳米颗粒的沟道区，其中P型或N型纳米颗粒的长度方向平行于在衬底上分隔的P型或N型纳米颗粒线。

10. 发明申请

US20100099215A1 THIN FILM TRANSISTOR, FLAT PANEL DISPLAY INCLUDING THE THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR AND THE FLAT PANEL DISPLAY 有权
标题翻译：薄膜晶体管，包括薄膜晶体管的平面板显示器，以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US20100099215A1
公开(公告)日：2010-04-22
申请号：US12641277
申请日：2009-12-17
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L51/40 , H01L51/56
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

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