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    • 3. 发明授权
    • Apparatus for selecting mumber of wait states in a burst EPROM
architecture
    • 用于在突发EPROM架构中选择等待状态的数量的装置
    • US5257221A
    • 1993-10-26
    • US981949
    • 1992-11-25
    • David A. LeakJoseph H. SalmonRobert E. Larsen
    • David A. LeakJoseph H. SalmonRobert E. Larsen
    • G11C16/18G11C5/00
    • G11C16/18
    • A mechanism to change the functionality of a state machine used to control operation of an EPROM device. The mechanism is programmed to generate logic level signals which are input to combinatorial logic used to implement the state machine to cause the state machine to operate with a predetermined number of wait states (typically on, two or three wait states) depending on the programming applied to the mechanism. The mechanism utilizes EPROM cells which are covered by a shield so that once programmed, they cannot be erased. The programming is performed after the part has been manufactured, but before shipment to a customer who, upon receipt of the part programs the EPROM in the usual manner. The programmed EPROM can then be erased nd reprogrammed without affecting the programming defining the number of wait states generated during operation of the state machine.
    • 用于改变用于控制EPROM设备的操作的状态机的功能的机制。 该机制被编程为产生逻辑电平信号,其被输入到用于实现状态机的组合逻辑,以使得状态机以预定数量的等待状态(通常为两个或三个等待状态)运行,这取决于所应用的编程 的机制。 该机制利用被屏蔽覆盖的EPROM单元,因此一旦编程,它们就不能被擦除。 编程在零件制造完成之后,在装运到客户之前,以通常的方式接收到EPROM的零件程序。 然后可以擦除编程的EPROM并重新编程,而不影响定义状态机操作期间产生的等待状态数量的编程。
    • 6. 发明授权
    • Method and apparatus for testing for a sufficient write voltage level
during power up of a SRAM array
    • 用于在SRAM阵列加电期间测试足够的写入电压电平的方法和装置
    • US5533196A
    • 1996-07-02
    • US189307
    • 1994-01-31
    • Joseph H. Salmon
    • Joseph H. Salmon
    • G11C29/02G06F11/34
    • G11C29/02
    • A SRAM testing circuit utilized to assure that a voltage is at a sufficient level for accessing a memory cell including a pair of memory cells each including those elements necessary to duplicate the memory cells of an associated memory array, a circuit for providing alternating-valued input signals for writing to the pair of memory cells during each clock period at which a write operation may occur, apparatus for emulating the load provided to a bitline of an associated memory array, apparatus for applying the input signals to one of the pair of memory cells and applying the inverse of the input signals to the other of the pair of memory cells, apparatus for testing both the condition of each of the memory cells after the application of the input and inverse input signals against the condition of the signals provided to each of the cells to determine if each of the pair of memory cells has switched to the appropriate condition, and apparatus for generating a fail signal if either one of the pair of memory cells has not switched to the appropriate condition.
    • 一种SRAM测试电路,用于确保电压处于足够的水平,用于访问包括一对存储单元的存储单元,每个存储单元包括复制相关存储器阵列的存储单元所需的那些元件,用于提供交替输入的电路 用于在可能发生写入操作的每个时钟周期期间写入到该对存储器单元的信号,用于模拟提供给相关联的存储器阵列的位线的装置的装置,用于将输入信号施加到该对存储单元之一 以及将所述输入信号的反相应用于所述一对存储器单元中的另一个,用于在施加所述输入和所述输入信号之后测试每个所述存储器单元的状态的装置, 确定所述一对存储单元中的每一个是否切换到适当的条件,以及用于产生失败信号的装置 的一对存储单元没有切换到适当的条件。
    • 7. 发明授权
    • Method and apparatus for preventing over-erasure of flash EEPROM memory
devices
    • 防止闪存EEPROM存储器件过度擦除的方法和装置
    • US5490109A
    • 1996-02-06
    • US267472
    • 1994-06-28
    • Joseph H. Salmon
    • Joseph H. Salmon
    • G11C16/16G11C16/34G11C11/34
    • G11C16/3477G11C16/16G11C16/3468
    • An arrangement for controlling the application of erase biasing voltages to the memory devices of a flash EEPROM memory array which arrangement precludes application of any erase biasing voltage until all of the devices are tested to determine which if any devices are programmed, and then allows application of erase bias voltages only to those blocks of the memory array which include devices which are programmed. In one embodiment, a power-on state machine which is used to read the state of the devices to initialize the array is used to test the condition of the array whenever an erase is desired and latching means are used with each block to preclude any erasing until it is determined that the block, in fact, includes programmed devices.
    • 一种用于控制对闪存EEPROM存储器阵列的存储器件施加擦除偏置电压的装置,该布置排除了施加任何擦除偏置电压,直到所有器件被测试,以确定哪个器件是否被编程,然后允许应用 将偏置电压擦除到存储器阵列的那些包括被编程的器件的块。 在一个实施例中,用于读取初始化阵列的设备的状态的开机状态机用于在需要擦除时测试阵列的状况,并且每个块使用锁存装置以排除任何擦除 直到确定该块实际上包括已编程的设备。