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1. 发明授权

US06366389B1 High contrast, ultrafast optically-addressed ultraviolet light modulator based upon optical anisotropy 失效
标题翻译：基于光学各向异性的高对比度，超快光学寻址紫外光调制器
公开(公告)号：US06366389B1
公开(公告)日：2002-04-02
申请号：US09638156
申请日：2000-08-15
申请人： Michael Wraback , Paul H. Shen , Shaohua Liang , Chandrasekhar R. Gorla , Yicheng Lu
发明人： Michael Wraback , Paul H. Shen , Shaohua Liang , Chandrasekhar R. Gorla , Yicheng Lu
IPC分类号： G02F107
CPC分类号： B82Y20/00 , G02F1/0126 , G02F1/3515 , G02F1/3523 , G02F1/3556
摘要： A high contrast ultrahigh speed optically-addressed ultraviolet light modulator exploits the optical anisotropy in a ZnO film epitaxially grown on (01 {overscore (1)}2) sapphire. This device, which could also be realized in a ZnO bulk crystal or similar wide bandgap material, achieves both high contrast and high speed by exploiting the anisotropic bleaching of the anisotropic absorption and concomitant ultrafast polarization rotation near the lowest exciton resonances produced by femtosecond ultraviolet pulses. The resultant modulation in a preferred embodiment is characterized by a contrast ratio of 70:1, corresponding to a dynamic polarization rotation of 12°, and decays to a quasi-equilibrium value within 100 ps.
摘要翻译：高对比度超高速光学寻址紫外光调制器利用在（01 {overscore（1）} 2）蓝宝石外延生长的ZnO膜中的光学各向异性。该器件也可以在ZnO体晶或类似的宽带隙材料中实现，通过利用由飞秒紫外脉冲产生的最低激子谐振附近的各向异性吸收和伴随的超快速偏振旋转的各向异性漂白，实现高对比度和高速度。在优选实施例中的结果调制的特征在于对应于12°的动态极化旋转的70:1的对比度，并且在100ps内衰减到准平衡值。

2. 发明授权

US07400030B2 Schottky diode with silver layer contacting the ZnO and MgxZn1−xO films 有权
标题翻译：具有银层的肖特基二极管与ZnO和MgxZn1-xO膜接触
公开(公告)号：US07400030B2
公开(公告)日：2008-07-15
申请号：US11042533
申请日：2005-01-25
申请人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri William Emanetoglu , Jian Zhong , Shaohua Liang
发明人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri William Emanetoglu , Jian Zhong , Shaohua Liang
IPC分类号： H01L29/04
CPC分类号： H01L31/0392 , H01L31/022408 , H01L31/108 , H01L31/1123 , Y02E10/50
摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
摘要翻译：在本发明中，提供了半导体器件，例如在n型ZnO和Mg x 1 Zn 1-x O O外延膜上制造的肖特基UV光电探测器。 ZnO和Mg x Zn 1-x O薄膜生长在R平面蓝宝石衬底上，肖特基二极管制造在ZnO和Mg < 分别使用银和铝作为肖特基和欧姆接触金属的ZnO 1-x O O膜。肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。

3. 发明申请

US20050145970A1 Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films 有权
标题翻译：具有银层的肖特基二极管与ZnO和MgxZn1-xO膜接触
公开(公告)号：US20050145970A1
公开(公告)日：2005-07-07
申请号：US11042533
申请日：2005-01-25
申请人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri Emanetoglu , Jian Zhong , Shaohua Liang
发明人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri Emanetoglu , Jian Zhong , Shaohua Liang
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/108 , H01L31/112 , H01L29/84
CPC分类号： H01L31/0392 , H01L31/022408 , H01L31/108 , H01L31/1123 , Y02E10/50
摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
摘要翻译：在本发明中，提供了半导体器件，例如在n型ZnO和Mg x 1 Zn 1-x O O外延膜上制造的肖特基UV光电探测器。 ZnO和Mg x Zn 1-x O薄膜生长在R平面蓝宝石衬底上，肖特基二极管制造在ZnO和Mg < 分别使用银和铝作为肖特基和欧姆接触金属的ZnO 1-x O O膜。肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。

4. 发明授权

US06498549B1 Dual-tuning microwave devices using ferroelectric/ferrite layers 失效
标题翻译：使用铁电体/铁氧体层的双调谐微波器件
公开(公告)号：US06498549B1
公开(公告)日：2002-12-24
申请号：US09457430
申请日：1999-12-07
申请人： Hua Jiang , Wei Hu , Shaohua Liang , Yi-Qun Li , Vladimir Fuflyigin , Jiankang Huang
发明人： Hua Jiang , Wei Hu , Shaohua Liang , Yi-Qun Li , Vladimir Fuflyigin , Jiankang Huang
IPC分类号： H01P120
CPC分类号： H01P1/20381 , H01P1/181 , H01P1/20363 , H01P1/20372 , H01P7/082 , H01P7/088
摘要： A ferroelectric layer is deposited or in close proximity to a ferromagnetic ferrite layer to make a microwave substrate on which conductors can be deposited or placed to make devices. The permittivity of the ferroelectric layer can be changed by applying a voltage and the permeability of the ferromagnetic layer can be changed with a magnetic field. This makes it possible to tune the device characteristics with two different effects taking best advantage of the capabilities of each. A material example is ferromagnetic yttrium-iron-garnet on which is deposited a thin film of ferroelectric barium strontium titanate. To minimize losses, the ferroelectric film should be high quality, but practical yttrium-iron-garnet substrates are polycrystalline so that the use of buffer layers is desirable. At least two methods can be used to deposit the ferroelectric film, pulsed laser deposition and metal-organic chemical liquid deposition. A variety of dual tunable microwave devices can be made with this substrate, including by way of example only, phase shifters, frequency filters, and resonators.
摘要翻译：沉积铁电层或紧邻铁磁性铁氧体层，以制成微波基板，导体可以沉积或放置在其上以制造器件。可以通过施加电压来改变铁电层的介电常数，并且可以用磁场改变铁磁层的磁导率。这使得可以利用两种不同的效果来调整设备特性，最大限度地利用每个特性的能力。材料实例是铁磁钇 - 铁 - 石榴石，在其上沉积铁电钡钛酸锶薄膜。为了使损耗最小化，铁电体膜应该是高质量的，但是实用的钇 - 铁 - 石榴石基材是多晶的，所以需要使用缓冲层。可以使用至少两种方法来沉积铁电薄膜，脉冲激光沉积和金属有机化学液体沉积。可以使用该衬底制造各种双可调微波器件，仅包括移相器，频率滤波器和谐振器。

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