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1. 发明授权

US07400030B2 Schottky diode with silver layer contacting the ZnO and MgxZn1−xO films 有权
标题翻译：具有银层的肖特基二极管与ZnO和MgxZn1-xO膜接触
公开(公告)号：US07400030B2
公开(公告)日：2008-07-15
申请号：US11042533
申请日：2005-01-25
申请人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri William Emanetoglu , Jian Zhong , Shaohua Liang
发明人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri William Emanetoglu , Jian Zhong , Shaohua Liang
IPC分类号： H01L29/04
CPC分类号： H01L31/0392 , H01L31/022408 , H01L31/108 , H01L31/1123 , Y02E10/50
摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
摘要翻译：在本发明中，提供了半导体器件，例如在n型ZnO和Mg x 1 Zn 1-x O O外延膜上制造的肖特基UV光电探测器。 ZnO和Mg x Zn 1-x O薄膜生长在R平面蓝宝石衬底上，肖特基二极管制造在ZnO和Mg < 分别使用银和铝作为肖特基和欧姆接触金属的ZnO 1-x O O膜。肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。

2. 发明授权

US06846731B2 Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films 失效
标题翻译：具有银层的肖特基二极管与ZnO和MgxZn1-xO膜接触
公开(公告)号：US06846731B2
公开(公告)日：2005-01-25
申请号：US10158540
申请日：2002-05-30
申请人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri William Emanetoglu , Jian Zhong
发明人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri William Emanetoglu , Jian Zhong
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/108 , H01L31/112 , H01L21/28
CPC分类号： H01L31/0392 , H01L31/022408 , H01L31/108 , H01L31/1123 , Y02E10/50
摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
摘要翻译：在本发明中，提供了在n型ZnO和Mg x Zn 1-x O外延膜上制造的肖特基UV光电探测器等半导体器件。 ZnO和MgxZn1-xO膜在R平面蓝宝石衬底上生长，肖特基二极管分别用银和铝作为肖特基和欧姆接触金属制作在ZnO和Mg x Zn 1-x O膜上。肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。

3. 发明申请

US20050145970A1 Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films 有权
标题翻译：具有银层的肖特基二极管与ZnO和MgxZn1-xO膜接触
公开(公告)号：US20050145970A1
公开(公告)日：2005-07-07
申请号：US11042533
申请日：2005-01-25
申请人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri Emanetoglu , Jian Zhong , Shaohua Liang
发明人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri Emanetoglu , Jian Zhong , Shaohua Liang
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/108 , H01L31/112 , H01L29/84
CPC分类号： H01L31/0392 , H01L31/022408 , H01L31/108 , H01L31/1123 , Y02E10/50
摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
摘要翻译：在本发明中，提供了半导体器件，例如在n型ZnO和Mg x 1 Zn 1-x O O外延膜上制造的肖特基UV光电探测器。 ZnO和Mg x Zn 1-x O薄膜生长在R平面蓝宝石衬底上，肖特基二极管制造在ZnO和Mg < 分别使用银和铝作为肖特基和欧姆接触金属的ZnO 1-x O O膜。肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。

4. 发明申请

US20120061660A1 ZnO NANOSTRUCTURE-BASED LIGHT EMITTING DEVICE 审中-公开
标题翻译：基于ZnO纳米结构的发光器件
公开(公告)号：US20120061660A1
公开(公告)日：2012-03-15
申请号：US13087000
申请日：2011-04-14
申请人： Yicheng Lu , Jian Zhong
发明人： Yicheng Lu , Jian Zhong
IPC分类号： H01L33/32 , H01L33/26
CPC分类号： H01L33/26 , B82Y20/00 , H01L21/02381 , H01L21/02458 , H01L21/02554 , H01L21/02565 , H01L21/0259 , H01L33/08 , H01L33/18 , H01L33/22 , H01L33/28
摘要： A Light Emitting Diode (LED) formed on a substrate of a material selected from at least one of a semiconductor, an insulator and a metal; at least one semiconductor film layer of ZnO or GaN deposited on the substrate; a nanotips array of ZnO or its ternary compound, the array being grown either directly or indirectly on a surface of at least one semiconductor film layer; at least one transparent and conductive oxide (TCO) layer deposited on at least one semiconductor film layer; and a semiconductor p-n junction under a forward bias voltage.
摘要翻译：一种形成在选自半导体，绝缘体和金属中的至少一种材料的基板上的发光二极管（LED）; 在衬底上沉积ZnO或GaN的至少一个半导体膜层; 纳米尖晶阵列的ZnO或其三元化合物，所述阵列直接或间接生长在至少一个半导体膜层的表面上; 沉积在至少一个半导体膜层上的至少一个透明导电氧化物（TCO）层; 和正向偏压下的半导体p-n结。

5. 发明申请

US20070158661A1 ZnO nanostructure-based light emitting device 审中-公开
标题翻译：基于ZnO纳米结构的发光器件
公开(公告)号：US20070158661A1
公开(公告)日：2007-07-12
申请号：US11330669
申请日：2006-01-12
申请人： Yicheng Lu , Jian Zhong
发明人： Yicheng Lu , Jian Zhong
IPC分类号： H01L33/00
CPC分类号： H01L33/26 , B82Y20/00 , H01L21/02381 , H01L21/02458 , H01L21/02554 , H01L21/02565 , H01L21/0259 , H01L33/08 , H01L33/18 , H01L33/22 , H01L33/28
摘要： ZnO nanostructure-based LEDs are provided to improve the emission efficiency. The devices include several configurations. Single crystal ZnO or MgxZn1−xO nanotips are grown on the top of a GaN p-n junction. Also, n-type ZnO nanotips are grown on p-GaN film to form an n-type ZnO nanotip/p-GaN heterojunction LED. A ZnO LED can be formed when depositing n-type ZnO nanotips on a p-type ZnO film layer. The ZnO nanotips, with a p-n junction in the tips, can be grown on glass for a low cost nano-LED, and can be grown on Si substrates to form an integrated ZnO nanoLED array on Si chips.
摘要翻译：提供基于ZnO纳米结构的LED以提高发射效率。这些设备包括几种配置。在GaN p-n结的顶部生长单晶ZnO或Mg x Zn 1-x O O纳米尖端。此外，n型ZnO纳米尖端在p-GaN膜上生长以形成n型ZnO纳米尖/ p-GaN异质结LED。当在p型ZnO膜层上沉积n型ZnO纳米尖端时，可以形成ZnO LED。在尖端具有p-n结的ZnO纳米尖端可以在玻璃上生长用于低成本的纳米LED，并且可以在Si衬底上生长以在Si芯片上形成集成的ZnO纳米LED阵列。

6. 发明授权

US08476824B2 Active matrix organic electroluminescent device and method of manufacture thereof 失效
标题翻译：有源矩阵有机电致发光器件及其制造方法
公开(公告)号：US08476824B2
公开(公告)日：2013-07-02
申请号：US13407743
申请日：2012-02-28
申请人： Junsheng Yu , Yadong Jiang , Jian Zhong , Hui Lin
发明人： Junsheng Yu , Yadong Jiang , Jian Zhong , Hui Lin
IPC分类号： H01L33/48
CPC分类号： H01L27/3258
摘要： An active matrix organic electroluminescent device includes a thin-film transistor, an organic electroluminescent device, and a spacer layer deposited between the thin-film transistor and the organic electroluminescent device, wherein the spacer layer is made of adhesive for a dual curing system selected from the group consisting of ultraviolet curing-thermal curing, ultraviolet curing-microwave curing, ultraviolet curing-anaerobic curing, and ultraviolet curing-electron beam curing system. The present invention solves the poor adhesiveness between the thin-film transistor and the organic electroluminescent device, and improves the moisture and oxygen proof ability. The preparation method is simple, effective, and able to lower the cost and difficulty, and greatly improve the yield rate of the device.
摘要翻译：有源矩阵有机电致发光器件包括薄膜晶体管，有机电致发光器件和沉积在薄膜晶体管和有机电致发光器件之间的间隔层，其中间隔层由用于双固化系统的粘合剂制成，所述双固化系统选自紫外线固化 - 热固化，紫外线固化 - 微波固化，紫外线固化 - 厌氧固化和紫外线固化 - 电子束固化体系。本发明解决了薄膜晶体管和有机电致发光器件之间的差的粘合性，并且提高了防潮和防氧化能力。制备方法简单，有效，能降低成本和难度，大大提高装置的产率。

7. 发明申请

US20120308179A1 Method and Apparatus for Colorless Add 有权
标题翻译：无色添加方法与装置
公开(公告)号：US20120308179A1
公开(公告)日：2012-12-06
申请号：US13292564
申请日：2011-11-09
申请人： Zhiping Jiang , Jian Zhong , Yan Cui
发明人： Zhiping Jiang , Jian Zhong , Yan Cui
IPC分类号： G02B6/26
CPC分类号： H04J14/0212 , H04J14/0208 , H04J14/0221
摘要： An apparatus comprising a plurality of switches coupled to a plurality of corresponding colorless laser transmitters, an odd channel coupler coupled to each of the switches, an even channel coupler coupled to each of the switches, and an interleaver coupled to the odd channel coupler and the even channel coupler. Also disclosed is an apparatus comprising a coupler coupled to a plurality of colorless laser transmitters, a first interleaver coupled to the coupler, and a second interleaver coupled to the first interleaver. Also disclosed is an apparatus comprising an odd channel coupler coupled to a plurality of first laser transmitters, an even channel coupler coupled to a plurality of second laser transmitters, and an interleaver coupled to the odd channel coupler and the even channel coupler.
摘要翻译：一种装置，包括耦合到多个对应的无色激光发射器的多个开关，耦合到每个开关的奇数通道耦合器，耦合到每个开关的偶数通道耦合器，以及耦合到奇数通道耦合器和偶数通道耦合器。还公开了一种装置，包括耦合到多个无色激光发射机的耦合器，耦合到耦合器的第一交织器和耦合到第一交织器的第二交织器。还公开了一种装置，包括耦合到多个第一激光发射器的奇信道耦合器，耦合到多个第二激光发射器的偶信道耦合器，以及耦合到奇信道耦合器和偶信道耦合器的交织器。

8. 发明申请

US20120215870A1 Method and System for Implementing Time Processing of Message 审中-公开
标题翻译：实现消息时间处理的方法和系统
公开(公告)号：US20120215870A1
公开(公告)日：2012-08-23
申请号：US13505212
申请日：2009-12-25
申请人： Yejuan Zhou , Bing Ye , Jian Zhong
发明人： Yejuan Zhou , Bing Ye , Jian Zhong
IPC分类号： G06F15/16
CPC分类号： H04L51/063 , G06Q10/10 , H04L51/38 , H04L67/306 , H04W4/12
摘要： A method and a system for implementing time processing of a message are provided in the present invention. The method includes: when determining that the time information in the received message needs to be processed according to a customized mode, performing the time conversion on the message according to the customized mode; distributing the message after the time conversion. The time information in the message can be processed according to the customized mode, thereby enabling the message, based on the actual requirements of the user terminal, to be displayed in manner of flexible time format, avoiding a confusion of the message time for the user and ensuring a better development of user message services.
摘要翻译：在本发明中提供了一种用于实现消息的时间处理的方法和系统。该方法包括：当确定接收到的消息中的时间信息需要根据定制模式进行处理时，根据定制模式对消息执行时间转换; 在时间转换后分发消息。消息中的时间信息可以根据定制模式进行处理，从而基于用户终端的实际需求使消息以灵活的时间格式显示，避免了用户对消息时间的混淆并确保更好地开发用户消息服务。

9. 发明授权

US08903435B2 Method and system for short message termination traffic control 有权
标题翻译：短消息终端流量控制的方法和系统
公开(公告)号：US08903435B2
公开(公告)日：2014-12-02
申请号：US13257645
申请日：2009-09-24
申请人： Jian Zhong , Yejuan Zhou , Libo Sun , Bing Ye
发明人： Jian Zhong , Yejuan Zhou , Libo Sun , Bing Ye
IPC分类号： H04W4/00 , H04W4/14 , H04L12/58 , H04L12/801 , H04L12/825 , H04W28/10 , H04W28/02
CPC分类号： H04W4/14 , H04L47/14 , H04L47/25 , H04L51/38 , H04W28/02 , H04W28/10
摘要： The present invention discloses a method for controlling short message terminated flow, including: a process that a SMS message center setting a terminated flow control threshold of a mobile switching center and controlling the terminated flow according to the threshold; the process including a step of the SMS message center dynamically setting the terminated flow control threshold according to the operation blocking level of short message service of the mobile switching center. The present invention also discloses a system for controlling short message terminated flow. With the SMS message center dynamically adjusting the terminated flow control threshold according to the load condition of the short message service of the mobile switching center, the present invention achieves adaptive terminated flow control of the mobile switching center and improves effectiveness of the flow control.
摘要翻译：本发明公开了一种用于控制短消息终止流程的方法，包括：SMS消息中心设置移动交换中心的终止流量控制阈值，并根据该阈值控制终止的流量; 所述处理包括所述SMS消息中心根据所述移动交换中心的短消息服务的操作阻塞级别动态地设置所述终止的流量控制阈值的步骤。本发明还公开了一种用于控制短消息终止流的系统。 SMS消息中心根据移动交换中心短消息业务的负载情况动态调整终结流量控制阈值，实现移动交换中心自适应终端流量控制，提高流量控制的有效性。

10. 发明申请

US20120269519A1 Apparatus and Method to Calculate a Noise Figure of an Optical Amplifier for Wavelength Channels in a Partial-Fill Scenario to Account for Channel Loading 有权
标题翻译：用于计算部分填充场景中波长通道的光放大器的噪声系数的装置和方法，以考虑通道加载
公开(公告)号：US20120269519A1
公开(公告)日：2012-10-25
申请号：US13091690
申请日：2011-04-21
申请人： Zhiping Jiang , Jian Zhong , Yan Cui
发明人： Zhiping Jiang , Jian Zhong , Yan Cui
IPC分类号： H04B10/00
CPC分类号： H04B10/2507 , H01S3/00 , H01S3/1301 , H04B10/0797 , H04B10/296 , H04J14/02
摘要： An apparatus comprising a processor configured to calculate a noise figure of an optical amplifier for a plurality of selected wavelength channels in a partial-fill scenario that accounts for channel loading. The noise figure is calculated using a plurality of corresponding noise figure correction values at a plurality of wavelengths based on an effective number of channels.
摘要翻译：一种装置，包括处理器，其配置成在考虑到信道加载的部分填充场景中计算多个选定波长信道的光放大器的噪声系数。基于有效信道数，使用多个波长的多个对应的噪声系数校正值来计算噪声系数。

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