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1. 发明授权

US07544609B2 Method for integrating liner formation in back end of line processing 有权
标题翻译：在线处理后端整合衬垫形成的方法
公开(公告)号：US07544609B2
公开(公告)日：2009-06-09
申请号：US11673276
申请日：2007-02-09
申请人： Matthew S. Angyal , Habib Hichri , Christopher J. Penny , David K. Watts
发明人： Matthew S. Angyal , Habib Hichri , Christopher J. Penny , David K. Watts
IPC分类号： H01L21/4763
CPC分类号： H01L21/76849 , H01L21/7684 , H01L21/76877
摘要： A method for integrating cap liner formation in back-end-of-line (BEOL) processing of a semiconductor device includes forming a trench structure within an insulating layer of the semiconductor device, depositing a first liner material over a top surface of the insulating layer, including sidewall and bottom surfaces of the trench, and partially filling the trench with a wiring metal material to a height corresponding to a final intended line height. A second liner material is over the wiring metal material, and a sacrificial fill material is formed over the second liner material. The sacrificial fill is planarized down to the level of the second liner material over the wiring metal material partially filling the trench, wherein a remaining portion of the second liner material defines a cap liner of the wiring metal.
摘要翻译：一种用于在半导体器件的后端行（BEOL）处理中集成帽衬层形成的方法包括在半导体器件的绝缘层内形成沟槽结构，在绝缘层的顶表面上沉积第一衬里材料，包括沟槽的侧壁和底表面，并且用布线金属材料将沟槽部分地填充到与最终预定的线高度相对应的高度。第二衬里材料在布线金属材料上方，并且在第二衬里材料上形成牺牲填充材料。将牺牲填充物平坦化到部分填充沟槽的布线金属材料上的第二衬垫材料的水平面上，其中第二衬垫材料的剩余部分限定了布线金属的盖衬垫。

2. 发明申请

US20080194099A1 Method for Integrating Liner Formation in Back End of Line Processing 有权
标题翻译：在线处理后端集成衬垫形成的方法
公开(公告)号：US20080194099A1
公开(公告)日：2008-08-14
申请号：US11673276
申请日：2007-02-09
申请人： Matthew S. Angyal , Habib Hichri , Christopher J. Penny , David K. Watts
发明人： Matthew S. Angyal , Habib Hichri , Christopher J. Penny , David K. Watts
IPC分类号： H01L21/4763
CPC分类号： H01L21/76849 , H01L21/7684 , H01L21/76877
摘要： A method for integrating cap liner formation in back-end-of-line (BEOL) processing of a semiconductor device includes forming a trench structure within an insulating layer of the semiconductor device, depositing a first liner material over a top surface of the insulating layer, including sidewall and bottom surfaces of the trench, and partially filling the trench with a wiring metal material to a height corresponding to a final intended line height. A second liner material is over the wiring metal material, and a sacrificial fill material is formed over the second liner material. The sacrificial fill is planarized down to the level of the second liner material over the wiring metal material partially filling the trench, wherein a remaining portion of the second liner material defines a cap liner of the wiring metal.
摘要翻译：一种用于在半导体器件的后端行（BEOL）处理中集成帽衬层形成的方法包括在半导体器件的绝缘层内形成沟槽结构，在绝缘层的顶表面上沉积第一衬里材料，包括沟槽的侧壁和底表面，并且用布线金属材料将沟槽部分地填充到与最终预定的线高度相对应的高度。第二衬里材料在布线金属材料上方，并且在第二衬里材料上形成牺牲填充材料。将牺牲填充物平坦化到部分填充沟槽的布线金属材料上的第二衬垫材料的水平面上，其中第二衬垫材料的剩余部分限定了布线金属的盖衬垫。

3. 发明授权

US06372111B1 Method and apparatus for reclaiming a metal from a CMP process for use in an electroplating process 失效
标题翻译：用于从电镀工艺中使用的CMP工艺回收金属的方法和装置
公开(公告)号：US06372111B1
公开(公告)日：2002-04-16
申请号：US09510295
申请日：2000-02-22
申请人： David K. Watts
发明人： David K. Watts
IPC分类号： B24B5700
CPC分类号： C25D21/22 , B24B37/04 , B24B57/02 , C02F1/42 , C02F1/4678 , C02F2101/20 , C02F2103/16 , C02F2103/346 , C02F2303/16 , C25D21/16 , C25D21/18
摘要： A method and apparatus is disclosed for reclaiming a metal from the effluent of a chemical mechanical planarization (CMP) process and using the reclaimed metal in an electroplating process. The steps of the method include using a chemical solution in a CMP process to remove material from a semiconductor device. An effluent is produced by this step that contains a dissolved first species removed from the semiconductor device. Then a second step of treating the effluent is performed to remove the dissolved first species and to produce a reclaimed metal. Then a third step of using the metal in an electroplating process is performed.
摘要翻译：公开了用于从化学机械平面化（CMP）工艺的流出物回收金属并在电镀工艺中使用再生金属的方法和装置。该方法的步骤包括在CMP工艺中使用化学溶液从半导体器件中去除材料。通过该步骤产生含有从半导体器件中去除的溶解的第一种子的流出物。然后进行处理流出物的第二步骤以除去溶解的第一种并产生再生金属。然后执行在电镀工艺中使用金属的第三步骤。

4. 发明申请

US20090142994A1 ELECTRICAL CONTACT STRUCTURES AND METHODS FOR USE 有权
标题翻译：电气接触结构和使用方法
公开(公告)号：US20090142994A1
公开(公告)日：2009-06-04
申请号：US11947103
申请日：2007-11-29
申请人： Rui Fang , Deepak Kulkarni , David K. Watts
发明人： Rui Fang , Deepak Kulkarni , David K. Watts
IPC分类号： B24B49/10
CPC分类号： B24B37/042 , B24B37/30 , B24B49/10 , Y10T29/49117
摘要： Methods and structures. A planarization method includes: providing a contact structure, where the contact structure includes an axle configured to rotate about an axis of rotation, a plurality of cantilever arms, each arm having a first end connected to the axle, where each arm extends radially outward from the axle; and a plurality of electrically conductive spheres, where at least one sphere is disposed on a second end of each arm; placing a substrate in contact with the spheres, applying an electric voltage to the axle, where the voltage transfers to the substrate, where responsive to the transfer an electrochemical reaction occurs on the substrate; rotating the axle, wherein the spheres revolve about the axis, wherein at least one sphere remains in electrical contact with the substrate; and electrochemical-mechanically planarizing the substrate. Also included is a contact structure, an electrical contact, and an electrical contact method.
摘要翻译：方法和结构。平面化方法包括：提供接触结构，其中所述接触结构包括构造成围绕旋转轴线旋转的轴，多个悬臂，每个臂具有连接到所述轴的第一端，其中每个臂从轴; 以及多个导电球体，其中至少一个球体设置在每个臂的第二端上; 将基板放置成与球体接触，向轴施加电压，其中电压转移到基板，其中响应于转移，在基板上发生电化学反应; 旋转轴，其中所述球围绕所述轴旋转，其中至少一个球保持与所述基底电接触; 和电化学 - 机械平面化基板。还包括接触结构，电接触和电接触方法。

5. 发明授权

US06362103B1 Method and apparatus for rejuvenating a CMP chemical solution 失效
标题翻译：化学解决方案的再生方法和装置
公开(公告)号：US06362103B1
公开(公告)日：2002-03-26
申请号：US09484933
申请日：2000-01-18
申请人： David K. Watts
发明人： David K. Watts
IPC分类号： H01L21302
CPC分类号： B24B37/04 , B24B57/02 , C02F1/42 , C02F1/4678 , C02F2101/20 , C02F2103/16 , C02F2103/346 , C02F2303/16 , C25D21/16 , C25D21/18 , C25D21/22
摘要： A method and apparatus is disclosed for rejuvenating a chemical solution used in a first chemical mechanical planarization (CMP) process for reuse in a second CMP process. The steps of the method include using the chemical solution in the first process to remove material from a semiconductor device. An effluent is produced by this step that contains a dissolved first species removed from the semiconductor device. Then a second step of treating the effluent is performed to remove the dissolved first species to produce a rejuvenated chemical solution.
摘要翻译：公开了一种用于使第一化学机械平面化（CMP）工艺中使用的化学溶液振兴以在第二CMP工艺中再利用的方法和装置。该方法的步骤包括在第一工艺中使用化学溶液从半导体器件中去除材料。通过该步骤产生含有从半导体器件中去除的溶解的第一种子的流出物。然后进行处理流出物的第二步骤以除去溶解的第一种以产生复原的化学溶液。

6. 发明申请

US20080233724A1 RECYCLING OF ELECTROCHEMICAL-MECHANICAL PLANARIZATION (ECMP) SLURRIES/ELECTROLYTES 有权
标题翻译：电化学机械平衡（ECMP）液晶/电解质的回收
公开(公告)号：US20080233724A1
公开(公告)日：2008-09-25
申请号：US11678089
申请日：2007-02-23
申请人： Rui Fang , Deepak Kulkarni , David K. Watts
发明人： Rui Fang , Deepak Kulkarni , David K. Watts
IPC分类号： C22B3/00
CPC分类号： C22B7/006 , C22B3/42 , Y02P10/234
摘要： A method, process and system for the recycling of electrochemical-mechanical planarization slurries/electrolytes as they are used in the back end of line of the semiconductor wafer manufacturing process is disclosed. The method, process and system includes with the removal of metal ions from slurries using ion exchange media and/or electrochemical deposition.
摘要翻译：公开了一种用于电化学 - 机械平面化浆料/电解质的再循环的方法，方法和系统，因为它们用于半导体晶片制造工艺的后端。该方法，方法和系统包括使用离子交换介质和/或电化学沉积从浆料中除去金属离子。

7. 发明授权

US6096652A Method of chemical mechanical planarization using copper coordinating ligands 失效
标题翻译：使用铜配位配体的化学机械平面化方法
公开(公告)号：US6096652A
公开(公告)日：2000-08-01
申请号：US963438
申请日：1997-11-03
申请人： David K. Watts , Janos Farkas , Jason Gomez , Chelsea Dang
发明人： David K. Watts , Janos Farkas , Jason Gomez , Chelsea Dang
IPC分类号： H01L21/321 , H01L21/768 , H01L21/00
CPC分类号： C23F3/00 , H01L21/3212 , H01L21/76807 , H01L21/7684
摘要： A method of CMP of the semiconductor device where the method comprises the sequential steps of providing a semiconductor device, forming a copper layer on the semiconductor device and planarizing the copper layer with a medium. The medium comprises an abrasive component and a chemical solution. The chemical solution comprises water, an oxidizing agent, a first coordinating ligand adapted to form a complex with Cu(I) and a second coordinating ligand adapted to form a complex with Cu(II).
摘要翻译：一种半导体器件的CMP方法，其中所述方法包括提供半导体器件的顺序步骤，在半导体器件上形成铜层并用介质平坦化铜层。介质包括磨料组分和化学溶液。化学溶液包括水，氧化剂，适于与Cu（I）形成络合物的第一配位配体和适于与Cu（II）形成络合物的第二配位配体。

8. 发明授权

US6071816A Method of chemical mechanical planarization using a water rinse to prevent particle contamination 失效
标题翻译：使用水冲洗的化学机械平面化方法以防止颗粒污染
公开(公告)号：US6071816A
公开(公告)日：2000-06-06
申请号：US921131
申请日：1997-08-29
申请人： David K. Watts , Rajeev Bajaj , Sanjit K. Das
发明人： David K. Watts , Rajeev Bajaj , Sanjit K. Das
IPC分类号： H01L21/304 , H01L21/321 , H01L21/302
CPC分类号： H01L21/32115
摘要： A method of chemical mechanical planarization of a semiconductor device provides a semiconductor device having a device front surface and a device back surface with the device front surface being a top surface of a second metal layer. A first planarizing step planarizes the device front surface with a first medium to expose a device second front surface, where the first medium comprises a first abrasive component and a first chemical solution. A rinsing step then rinses the device back surface with water. A second planarizing step then planarizes the device second front surface with a second medium where the second medium comprises a second abrasive component and a second chemical solution.
摘要翻译：半导体器件的化学机械平坦化的方法提供了具有器件正面和器件背面的半导体器件，器件前表面是第二金属层的顶表面。第一平面化步骤用第一介质平坦化装置前表面以暴露装置第二前表面，其中第一介质包括第一研磨部件和第一化学溶液。冲洗步骤然后用水冲洗设备背面。第二平面化步骤然后用第二介质平面化设备第二前表面，其中第二介质包括第二研磨组分和第二化学溶液。

9. 发明申请

US20110119908A1 ELECTRICAL CONTACT METHOD 有权
标题翻译：电接触方式
公开(公告)号：US20110119908A1
公开(公告)日：2011-05-26
申请号：US13018751
申请日：2011-02-01
申请人： Rui Fang , Deepak Kulkarni , David K. Watts
发明人： Rui Fang , Deepak Kulkarni , David K. Watts
IPC分类号： H01R43/00
CPC分类号： B24B37/042 , B24B37/30 , B24B49/10 , Y10T29/49117
摘要： An electrical contact method. An axle having an axis of rotation is provided. Cantilever arms are provided. Each cantilever arm has a first end and a second opposing end. The first end is connected to the axle. Each cantilever arm extends radially outward from the axle about perpendicular to the axis of rotation. At least two electrically conductive contacts is provided. At least one electrically conductive contact of the at least two electrically conductive contacts is disposed on the second end of each cantilever arm. A sample is supported on a support member. The electrically conductive contacts are pressed against a first surface of the sample. After the electrically conductive contacts are pressed, the electrically conductive contacts are revolved about the axis of rotation, wherein the at least one electrically conductive contact remains in electrical contact with the first surface.
摘要翻译：电接触法。提供具有旋转轴的轴。提供悬臂。每个悬臂具有第一端和第二相对端。第一端连接到轴。每个悬臂从轴线径向向外延伸，垂直于旋转轴线。提供至少两个导电触点。至少两个导电触点的至少一个导电触点设置在每个悬臂的第二端上。支持成员支持示例。导电触头压在样品的第一表面上。在导电触点被按压之后，导电触头围绕旋转轴线旋转，其中至少一个导电触头保持与第一表面电接触。

10. 发明授权

US07883395B2 Electrical contact structures and methods for use 有权
标题翻译：电接触结构和使用方法
公开(公告)号：US07883395B2
公开(公告)日：2011-02-08
申请号：US11947103
申请日：2007-11-29
申请人： Rui Fang , Deepak Kulkarni , David K. Watts
发明人： Rui Fang , Deepak Kulkarni , David K. Watts
IPC分类号： B23H5/06 , C25D17/00 , B24D11/02
CPC分类号： B24B37/042 , B24B37/30 , B24B49/10 , Y10T29/49117
摘要： Methods and structures. A planarization method includes: providing a contact structure, where the contact structure includes an axle configured to rotate about an axis of rotation, a plurality of cantilever arms, each arm having a first end connected to the axle, where each arm extends radially outward from the axle; and a plurality of electrically conductive spheres, where at least one sphere is disposed on a second end of each arm; placing a substrate in contact with the spheres, applying an electric voltage to the axle, where the voltage transfers to the substrate, where responsive to the transfer an electrochemical reaction occurs on the substrate; rotating the axle, wherein the spheres revolve about the axis, wherein at least one sphere remains in electrical contact with the substrate; and electrochemical-mechanically planarizing the substrate. Also included is a contact structure, an electrical contact, and an electrical contact method.
摘要翻译：方法和结构。平面化方法包括：提供接触结构，其中所述接触结构包括构造成围绕旋转轴线旋转的轴，多个悬臂，每个臂具有连接到所述轴的第一端，其中每个臂从轴; 以及多个导电球体，其中至少一个球体设置在每个臂的第二端上; 将基板放置成与球体接触，向轴施加电压，其中电压转移到基板，其中响应于转移，在基板上发生电化学反应; 旋转轴，其中所述球围绕所述轴旋转，其中至少一个球保持与所述基底电接触; 和电化学 - 机械平面化基板。还包括接触结构，电接触和电接触方法。

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