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    • 2. 发明授权
    • Vaporizer for MOCVD and method of vaporizing raw material solutions for MOCVD
    • 用于MOCVD的蒸发器和用于MOCVD的原料溶液的蒸发方法
    • US07744698B2
    • 2010-06-29
    • US10310578
    • 2002-12-05
    • Masayuki TodaMasaki KusuharaMikio DoiMasaru UmedaMitsuru FukagawaYoichi KannoOsamu UchisawaKohei YamamotoToshikatu Meguro
    • Masayuki TodaMasaki KusuharaMikio DoiMasaru UmedaMitsuru FukagawaYoichi KannoOsamu UchisawaKohei YamamotoToshikatu Meguro
    • C23C16/00
    • C23C16/4486C23C16/409
    • Disclosed is a vaporizer constituted of a dispersing section 8 and a vaporizing section 22. The dispersing section 8 comprises a gas introduction port 4 for introducing a carrier gas 3 under pressure into a gas passage, means for feeding raw material solutions 5a and 5b to the gas passage, and a gas outlet 7 for delivering the carrier gas containing the raw material solutions to the vaporizing section 22. The vaporizing section 22 comprises a vaporizing tube 20 having one end connected to a reaction tube of the MOCVD system and having the other end connected to the gas outlet 7 of the dispersing section 8, and heating means for heating the vaporizing tube 20. The vaporizing section 22 serves to heat and vaporize the raw material solution containing carrier gas 3 delivered from the dispersing section 8. The dispersing section 8 includes a dispersing section body 1 having a cylindrical hollow portion, and a rod 10 having an outer diameter smaller than the inner diameter of the cylindrical hollow portion. The rod 10 has a spiral groove 60 formed in the external periphery closer to the vaporizing section 22, the rod i0 being inserted into the cylindrical hollow portion.
    • 公开了由分散部8和蒸发部22构成的蒸发器。分散部8包括用于将载气3在压力下导入气体通道的气体导入口4,将原料溶液5a,5b供给到 气体通道和用于将含有原料溶液的载气输送到汽化部分22的气体出口7.蒸发部分22包括蒸发管20,其一端连接到MOCVD系统的反应管,并具有另一端 连接到分散部8的气体出口7,以及用于加热蒸发管20的加热装置。蒸发部22用于加热和蒸发从分散部8输送的含有载气3的原料溶液。分散部8 包括具有圆柱形中空部分的分散部分主体1和具有小于圆柱形内径的外径的杆10 l中空部分。 杆10具有形成在更靠近蒸发部22的外周中的螺旋槽60,杆i0插入到圆筒形中空部中。
    • 4. 发明授权
    • Wafer carrying device and wafer carrying method
    • 晶圆承载装置和晶圆承载方式
    • US5518360A
    • 1996-05-21
    • US50462
    • 1993-05-17
    • Masayuki TodaTakashi OnodaTadahiro OhmiMasaru UmedaYoichi Kanno
    • Masayuki TodaTakashi OnodaTadahiro OhmiMasaru UmedaYoichi Kanno
    • B65G51/03H01L21/677F16C32/06
    • H01L21/67787B65G51/03H01L21/67784Y10S414/135Y10S414/136
    • A device for carrying a thin plate-like substrate such as a semiconductor wafer and controlling its position by floating it with an inert gas of low impurity concentration. A transferring unit and a controlling unit are respectively provided with gas nozzles for floating a thin plate-like substrate and with a gas exhausting and circulating system, and a plurality of them are in combination with each other in a sealing state. The controlling unit, further, has a vacuum suction hole at its controlling center, and is provided with nozzles for controlling the thin plate-like substrate in its radial and circumferential direction respectively and with nozzles for stopping the thin plate-like substrate or sending out it to the next unit too. On the bottom of a control space, grooves extending from the vacuum suction hole are formed for improving the positional accuracy of stopping the thin palate-like substrate, and they are closed on the insides of their circumferential part when the center of the thin plate-like substrate has coincided with the controlling center of the controlling unit.
    • PCT No.PCT / JP91 / 01469 Sec。 371日期:1993年5月17日 102(e)日期1993年5月17日PCT 1991年10月28日PCT公布。 第WO92 / 09103号公报 日期:1992年5月29日。一种用于承载诸如半导体晶片的薄板状基板的装置,并且通过用低杂质浓度的惰性气体漂浮来控制其位置。 传送单元和控制单元分别设置有用于浮动薄板状基板和排气循环系统的气体喷嘴,并且其中多个在密封状态下彼此组合。 此外,控制单元在其控制中心具有真空吸引孔,并且分别设置有用于在其径向和周向上控制薄板状基板的喷嘴和用于停止薄板状基板的喷嘴或发出 它也到下一个单位。 在控制空间的底部形成有从真空抽吸孔延伸出的槽,用于提高停止薄腭状基板的位置精度,并且当薄板状基板的中心位于其周向部分的内侧时, 像基板与控制单元的控制中心一致。
    • 5. 发明授权
    • Wafer carrying device and wafer carrying method
    • 晶圆承载装置和晶圆承载方式
    • US5921744A
    • 1999-07-13
    • US900049
    • 1997-07-24
    • Masayuki TodaTakashi OnodaTadahiro OhmiMasaru UmedaYoichi Kanno
    • Masayuki TodaTakashi OnodaTadahiro OhmiMasaru UmedaYoichi Kanno
    • B65G51/03H01L21/677F16C32/06
    • H01L21/67787B65G51/03H01L21/67784Y10S414/135Y10S414/136
    • A device is provided for carrying a thin plate-like substrate such as a semiconductor wafer and for controlling the position of the wafer by floating it with an inert gas of low impurity concentration. A transferring unit and a control unit are both respectively provided with gas nozzles for floating a wafer and with a gas exhausting and circulating system. A plurality of transferring and control units are sealingly interconnected. Each control unit has a vacuum suction hole at its control center, and is provided with nozzles for controlling the wafer in the radial and circumferential directions, respectively, and with nozzles for stopping the wafer and for transporting the wafer to the next unit. On the bottom of a control space defined by each control unit, grooves which extend from the vacuum suction hole are formed for improving the positional accuracy of stopping the wafer. The grooves have closed ends which are located inside the periphery of the wafer when the center of the wafer is positioned above and centered on the control center of the control unit.
    • 提供一种用于承载诸如半导体晶片的薄板状基板的装置,并且通过用低杂质浓度的惰性气体浮动来控制晶片的位置。 传送单元和控制单元分别设置有用于浮动晶片的气体喷嘴和排气和循环系统。 多个传送和控制单元被密封地互连。 每个控制单元在其控制中心具有一个真空抽吸孔,并且分别设有用于在径向和圆周方向上控制晶片的喷嘴和用于停止晶片并将晶片输送到下一个单元的喷嘴。 在由每个控制单元限定的控制空间的底部形成有从真空吸入孔延伸的槽,以提高晶片停止的位置精度。 当晶片的中心位于控制单元的控制中心上方并居中时,槽具有位于晶片周边内部的闭合端。